Reliability and parasitic issues in GaN-based power HEMTs: a review (Englisch)
Topical Review
- Neue Suche nach: G Meneghesso
- Neue Suche nach: M Meneghini
- Neue Suche nach: I Rossetto
- Neue Suche nach: D Bisi
- Neue Suche nach: S Stoffels
- Neue Suche nach: M Van Hove
- Neue Suche nach: S Decoutere
- Neue Suche nach: E Zanoni
- Neue Suche nach: G Meneghesso
- Neue Suche nach: M Meneghini
- Neue Suche nach: I Rossetto
- Neue Suche nach: D Bisi
- Neue Suche nach: S Stoffels
- Neue Suche nach: M Van Hove
- Neue Suche nach: S Decoutere
- Neue Suche nach: E Zanoni
In:
Semiconductor Science and Technology
;
31
, 9
;
093004
;
2016
-
ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:Reliability and parasitic issues in GaN-based power HEMTs: a review
-
Untertitel:Topical Review
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Weitere Titelangaben:Reliability and parasitic issues in GaN-based power HEMTs: a review
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Beteiligte:G Meneghesso ( Autor:in ) / M Meneghini ( Autor:in ) / I Rossetto ( Autor:in ) / D Bisi ( Autor:in ) / S Stoffels ( Autor:in ) / M Van Hove ( Autor:in ) / S Decoutere ( Autor:in ) / E Zanoni ( Autor:in )
-
Erschienen in:Semiconductor Science and Technology ; 31, 9 ; 093004
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Verlag:
- Neue Suche nach: Institute of Physics
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Erscheinungsdatum:01.09.2016
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Format / Umfang:10 pages
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ISSN:
-
DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis – Band 31, Ausgabe 9
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