Growth and structural properties of step-graded, high Sn content GeSn layers on Ge (Englisch)
Paper
- Neue Suche nach: J Aubin
- Neue Suche nach: J M Hartmann
- Neue Suche nach: A Gassenq
- Neue Suche nach: J L Rouviere
- Neue Suche nach: E Robin
- Neue Suche nach: V Delaye
- Neue Suche nach: D Cooper
- Neue Suche nach: N Mollard
- Neue Suche nach: V Reboud
- Neue Suche nach: V Calvo
- Neue Suche nach: J Aubin
- Neue Suche nach: J M Hartmann
- Neue Suche nach: A Gassenq
- Neue Suche nach: J L Rouviere
- Neue Suche nach: E Robin
- Neue Suche nach: V Delaye
- Neue Suche nach: D Cooper
- Neue Suche nach: N Mollard
- Neue Suche nach: V Reboud
- Neue Suche nach: V Calvo
In:
Semiconductor Science and Technology
;
32
, 9
;
094006
;
2017
-
ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:Growth and structural properties of step-graded, high Sn content GeSn layers on Ge
-
Untertitel:Paper
-
Weitere Titelangaben:Growth and structural properties of step-graded, high Sn content GeSn layers on Ge
-
Beteiligte:J Aubin ( Autor:in ) / J M Hartmann ( Autor:in ) / A Gassenq ( Autor:in ) / J L Rouviere ( Autor:in ) / E Robin ( Autor:in ) / V Delaye ( Autor:in ) / D Cooper ( Autor:in ) / N Mollard ( Autor:in ) / V Reboud ( Autor:in ) / V Calvo ( Autor:in )
-
Erschienen in:Semiconductor Science and Technology ; 32, 9 ; 094006
-
Verlag:
- Neue Suche nach: Institute of Physics
-
Erscheinungsdatum:01.09.2017
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Format / Umfang:8 pages
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ISSN:
-
DOI:
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Medientyp:Aufsatz (Zeitschrift)
-
Format:Elektronische Ressource
-
Sprache:Englisch
-
Datenquelle:
Inhaltsverzeichnis – Band 32, Ausgabe 9
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