Pressure effects in AlAs/InxGa1−xAs/GaAs resonant tunnelling diodes for application in micromachined sensors (Englisch)
Nationallizenz
- Neue Suche nach: Wang Jian
- Neue Suche nach: Zhang Wen-Dong
- Neue Suche nach: Xue Chen-Yang
- Neue Suche nach: Xiong Ji-Jun
- Neue Suche nach: Liu Jun
- Neue Suche nach: Xie Bin
- Neue Suche nach: Wang Jian
- Neue Suche nach: Zhang Wen-Dong
- Neue Suche nach: Xue Chen-Yang
- Neue Suche nach: Xiong Ji-Jun
- Neue Suche nach: Liu Jun
- Neue Suche nach: Xie Bin
In:
Chinese Physics
;
16
, 4
;
1150-1154
;
2007
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Pressure effects in AlAs/InxGa1−xAs/GaAs resonant tunnelling diodes for application in micromachined sensors
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Beteiligte:Wang Jian ( Autor:in ) / Zhang Wen-Dong ( Autor:in ) / Xue Chen-Yang ( Autor:in ) / Xiong Ji-Jun ( Autor:in ) / Liu Jun ( Autor:in ) / Xie Bin ( Autor:in )
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Erschienen in:Chinese Physics ; 16, 4 ; 1150-1154
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Erscheinungsdatum:01.04.2007
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis – Band 16, Ausgabe 4
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