Nature and energy structure of impurity and intrinsic defects in V-doped Cd1−xHgxTe (Englisch)
Nationallizenz
- Neue Suche nach: Gnatenko, Yu P
- Neue Suche nach: Faryna, I O
- Neue Suche nach: Bukivskij, P M
- Neue Suche nach: Shigiltchoff, O A
- Neue Suche nach: Gamernyk, R V
- Neue Suche nach: Paranchych, S Yu
- Neue Suche nach: Gnatenko, Yu P
- Neue Suche nach: Faryna, I O
- Neue Suche nach: Bukivskij, P M
- Neue Suche nach: Shigiltchoff, O A
- Neue Suche nach: Gamernyk, R V
- Neue Suche nach: Paranchych, S Yu
In:
Semiconductor Science and Technology
;
20
, 5
;
378-388
;
2005
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Nature and energy structure of impurity and intrinsic defects in V-doped Cd1−xHgxTe
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Beteiligte:Gnatenko, Yu P ( Autor:in ) / Faryna, I O ( Autor:in ) / Bukivskij, P M ( Autor:in ) / Shigiltchoff, O A ( Autor:in ) / Gamernyk, R V ( Autor:in ) / Paranchych, S Yu ( Autor:in )
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Erschienen in:Semiconductor Science and Technology ; 20, 5 ; 378-388
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Erscheinungsdatum:01.05.2005
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis – Band 20, Ausgabe 5
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