Room temperature direct band gap emission characteristics of surfactant mediated grown compressively strained Ge films (Englisch)
Paper
- Neue Suche nach: Ajit K Katiyar
- Neue Suche nach: Andreas Grimm
- Neue Suche nach: R Bar
- Neue Suche nach: Jan Schmidt
- Neue Suche nach: Tobias Wietler
- Neue Suche nach: H Joerg Osten
- Neue Suche nach: Samit K Ray
- Neue Suche nach: Ajit K Katiyar
- Neue Suche nach: Andreas Grimm
- Neue Suche nach: R Bar
- Neue Suche nach: Jan Schmidt
- Neue Suche nach: Tobias Wietler
- Neue Suche nach: H Joerg Osten
- Neue Suche nach: Samit K Ray
In:
Nanotechnology
;
27
, 43
;
435204
;
2016
-
ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:Room temperature direct band gap emission characteristics of surfactant mediated grown compressively strained Ge films
-
Untertitel:Paper
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Weitere Titelangaben:Room temperature direct band gap emission characteristics of surfactant mediated grown compressively strained Ge films
-
Beteiligte:Ajit K Katiyar ( Autor:in ) / Andreas Grimm ( Autor:in ) / R Bar ( Autor:in ) / Jan Schmidt ( Autor:in ) / Tobias Wietler ( Autor:in ) / H Joerg Osten ( Autor:in ) / Samit K Ray ( Autor:in )
-
Erschienen in:Nanotechnology ; 27, 43 ; 435204
-
Verlag:
- Neue Suche nach: Institute of Physics
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Erscheinungsdatum:28.10.2016
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Format / Umfang:9 pages
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ISSN:
-
DOI:
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Medientyp:Aufsatz (Zeitschrift)
-
Format:Elektronische Ressource
-
Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis – Band 27, Ausgabe 43
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