Effects of Si-cap thickness and temperature on device performance of Si/Ge1−xCx/Si p-MOSFETs (Englisch)
Nationallizenz
- Neue Suche nach: Jamil, Mustafa
- Neue Suche nach: Liu, En-Shao
- Neue Suche nach: Ferdousi, Fahmida
- Neue Suche nach: Donnelly, Joseph P
- Neue Suche nach: Tutuc, Emanuel
- Neue Suche nach: Banerjee, Sanjay K
- Neue Suche nach: Jamil, Mustafa
- Neue Suche nach: Liu, En-Shao
- Neue Suche nach: Ferdousi, Fahmida
- Neue Suche nach: Donnelly, Joseph P
- Neue Suche nach: Tutuc, Emanuel
- Neue Suche nach: Banerjee, Sanjay K
In:
Semiconductor Science and Technology
;
25
, 4
;
045005
;
2010
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Effects of Si-cap thickness and temperature on device performance of Si/Ge1−xCx/Si p-MOSFETs
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Beteiligte:Jamil, Mustafa ( Autor:in ) / Liu, En-Shao ( Autor:in ) / Ferdousi, Fahmida ( Autor:in ) / Donnelly, Joseph P ( Autor:in ) / Tutuc, Emanuel ( Autor:in ) / Banerjee, Sanjay K ( Autor:in )
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Erschienen in:Semiconductor Science and Technology ; 25, 4 ; 045005
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Erscheinungsdatum:01.04.2010
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Datenquelle:
Inhaltsverzeichnis – Band 25, Ausgabe 4
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