Modulation of resistive switching behavior of HfOx film by embedding a thin Al buffer layer (Englisch)
Paper
- Neue Suche nach: Tingting Guo
- Neue Suche nach: Tingting Tan
- Neue Suche nach: Li Duan
- Neue Suche nach: Xing Wei
- Neue Suche nach: Wei Wang
- Neue Suche nach: Tingting Guo
- Neue Suche nach: Tingting Tan
- Neue Suche nach: Li Duan
- Neue Suche nach: Xing Wei
- Neue Suche nach: Wei Wang
In:
Semiconductor Science and Technology
;
34
, 4
;
045003
;
2019
-
ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:Modulation of resistive switching behavior of HfOx film by embedding a thin Al buffer layer
-
Untertitel:Paper
-
Weitere Titelangaben:Modulation of resistive switching behavior of HfOx film by embedding a thin Al buffer layer
-
Beteiligte:Tingting Guo ( Autor:in ) / Tingting Tan ( Autor:in ) / Li Duan ( Autor:in ) / Xing Wei ( Autor:in ) / Wei Wang ( Autor:in )
-
Erschienen in:Semiconductor Science and Technology ; 34, 4 ; 045003
-
Verlag:
- Neue Suche nach: Institute of Physics
-
Erscheinungsdatum:01.04.2019
-
Format / Umfang:6 pages
-
ISSN:
-
DOI:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Elektronische Ressource
-
Sprache:Englisch
-
Datenquelle:
Inhaltsverzeichnis – Band 34, Ausgabe 4
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 043001
-
Metal oxide nanostructures for sensor applicationsD Nunes / A Pimentel / A Gonçalves / S Pereira / R Branquinho / P Barquinha / E Fortunato / R Martins et al. | 2019
- 044001
-
In search of a true hot carrier solar cellD K Ferry et al. | 2019
- 045001
-
Silicon carbide bipolar junction transistor with novel emitter field plate design for high current gain and reliabilityYourun Zhang / Hang Chen / Maojiu Luo / Juntao Li / Wen Wang / Xiaochuan Deng / Yun Bai / Hong Chen / Bo Zhang et al. | 2019
- 045002
-
Mixed states of exciton condensation in two dimensional semiconductorsChih-Yu Chen / C D Hu et al. | 2019
- 045003
-
Modulation of resistive switching behavior of HfOx film by embedding a thin Al buffer layerTingting Guo / Tingting Tan / Li Duan / Xing Wei / Wei Wang et al. | 2019
- 045004
-
Effect of high energy (15 MeV) proton irradiation on vertical power 4H-SiC MOSFETsA A Lebedev / V V Kozlovski / M E Levinshtein / P A Ivanov / A M Strel’chuk / A V Zubov / Leonid Fursin et al. | 2019
- 045005
-
A high di/dt 4H-SiC thyristor with ‘-shaped’ n-baseQing Liu / Hongbin Pu / Xi Wang / Jiaqi Li et al. | 2019
- 045006
-
Computational study and characteristics of In2S3 thin films: effects of substrate nature and deposition temperatureKawther Assili / Wafa Selmi / Khaled Alouani / Xavier Vilanova et al. | 2019
- 045007
-
The atomic layer etching of molybdenum disulfides using low-power oxygen plasmaKuan-Chao Chen / Chia-Wei Liu / Chi Chen / Shih-Yen Lin et al. | 2019
- 045008
-
An efficient wide range photodetector fabricated using a bilayer Bi2S3/SnS heterojunction thin filmFarid Jamali-Sheini / Mohsen Cheraghizade / Ladan Heshmatynezhad et al. | 2019
- 045009
-
First demonstration of RF N-polar GaN MIS-HEMTs grown on bulk GaN using PAMBEShubhra S Pasayat / Elaheh Ahmadi / Brian Romanczyk / Onur Koksaldi / Anchal Agarwal / Matthew Guidry / Chirag Gupta / Christian Wurm / Stacia Keller / Umesh K Mishra et al. | 2019
- 045010
-
Hydrogenated amorphous silicon characterization from steady state photoconductive measurementsLeonardo Kopprio / Christophe Longeaud / Javier Schmidt et al. | 2019
- 045011
-
Gate length effect on trapping properties in AlGaN/GaN high-electron-mobility transistorsPhilippe Ferrandis / Mariam El-Khatib / Marie-Anne Jaud / Erwan Morvan / Matthew Charles / Gérard Guillot / Georges Bremond et al. | 2019
- 045012
-
Overgrowth and characterization of (11-22) semi-polar GaN on (113) silicon with a two-step methodY Cai / X Yu / S Shen / X Zhao / L Jiu / C Zhu / J Bai / T Wang et al. | 2019
- 045013
-
Conductivity modulation in strained transition-metal-dichalcogenides via micro-electro-mechanical actuationA Vidana / D Zubia / M Martinez / E Acosta / J Mireles Jr / T-J King / S Almeida et al. | 2019
- 045014
-
Enhanced optical and electrical performance of Ge1−xSnx/Ge/Si(100) (x = 0.062) semiconductor via inductively coupled H2 plasma treatmentsBuguo Wang / Michael R Hogsed / Thomas R Harris / Patrick M Wallace / John Kouvetakis et al. | 2019
- 045015
-
A comprehensive investigation of TFETs with semiconducting silicide source: impact of gate drain underlap and interface trapsMohamed Elnaggar / Ahmed Shaker / Mostafa Fedawy et al. | 2019
- 045016
-
Influence of heat treatment of the base material on the electrical properties of anisotyped heterojunctions n-ZnO:Al/p-CdZnTeE V Maistruk / I G Orletsky / M I Ilashchuk / I P Koziarskyi / D P Koziarskyi / P D Marianchuk / O A Parfenyuk et al. | 2019
- 045017
-
Thermal annealing effects on the electrophysical characteristics of sputtered MoS2 thin films by Hall effect measurementsMeng Qi / Jianrong Xiao / Chenyang Gong et al. | 2019
- 045018
-
Photosensitive Sb-n-InSb Schottky barrier diodesStepan Petrosyan / Ashot Khachatryan et al. | 2019
- 045019
-
Optical properties from photoelectron energy-loss spectroscopy of low-temperature aqueous chemically synthesized ZnO nanorods grown on SiDenis David / Hatim Alnoor / Victor Mancir da Silva Santana / Pascal Bargiela / Omer Nur / Magnus Willander / Gustavo Baldissera / Clas Persson / Antonio Ferreira da Silva et al. | 2019