AC-conductance of one-dimensional, long-range correlated electrons (Englisch)
- Neue Suche nach: Cuniberti, G.
- Neue Suche nach: Cuniberti, G.
- Neue Suche nach: Sassetti, M.
- Neue Suche nach: Kramer, B.
In:
Physica / B
;
227
, 1-4
; 256-258
;
1996
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:AC-conductance of one-dimensional, long-range correlated electrons
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Beteiligte:
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Erschienen in:Physica / B ; 227, 1-4 ; 256-258
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Verlag:
- Neue Suche nach: North-Holland Physics Publ.
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Erscheinungsort:Amsterdam
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Erscheinungsdatum:1996
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ISSN:
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ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 51.00 / 51.00 / 33.60 / 33.60
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 535/3400
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Schlagwörter:
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Klassifikation:
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Datenquelle:
Inhaltsverzeichnis – Band 227, Ausgabe 1-4
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Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
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Electronic interactions between quantum dotsKotthaus, J.P. et al. | 1996
- 6
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Electronic excitations in quantum wires and dotsAbstreiter, G. et al. | 1996
- 11
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Quantitative analysis of elastic strains in GaAs-AlAs quantum dotsDarhuber, A. et al. | 1996
- 17
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Multiple quantum-dot infrared phototransistorsRyzhii, V. et al. | 1996
- 21
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Effects of disorder and electron-electron interactions on orbital magnetism in quantum dotsTamura, H. et al. | 1996
- 24
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Temperature-dependent magnetotransport properties for systems of few quantum wiresPloner, G. et al. | 1996
- 31
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Tunnelling and transfer between 1D and 2D electrons in adjusted quantum wells with thin barrierFriedland, K.-J. et al. | 1996
- 31
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Tunnelling and transfer between ID and 2D electrons in adjusted quantum wells with thin barrierFriedland, K.-J. / Hirayama, Y. / Fujisawa, T. / Saku, T. / Tarucha, S. et al. | 1996
- 34
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Mobility enhanced 1DEG electron transport in side gated quantum wire structuresWirner, C. et al. | 1996
- 38
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Magnetic field effects in p-type modulation-doped GaAs quantum wiresNomura, S. et al. | 1996
- 42
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Quantum transport in a Schottky in-plane-gate controlled GaAs-AlGaAs quantum well wiresHashizume, T. et al. | 1996
- 46
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Self-consistent results in quantum wires in magnetic fields: Temperature effectsSuzuki, T. et al. | 1996
- 50
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Mesoscopic transport properties of in-plane gate defined quantum wiresPivin Jr, D.P. et al. | 1996
- 54
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Conductance fluctuations in quantum wire systems: A comparison between different scattering modelsGrincwajg, A. et al. | 1996
- 57
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Scattering reduction due to electron wave interference by periodic doping of impurity ions in semiconductorsKikegawa, N. et al. | 1996
- 61
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Effect of donor layer ordering on the formation of single mode quantum wiresStopa, M. et al. | 1996
- 65
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Analysis of valence-subband structures in a quantum wire with an arbitrary cross-sectionOgawa, M. et al. | 1996
- 69
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Ballistic transport in the upper subband of a two-dimensional electron systemLu, J.P. et al. | 1996
- 74
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Spatial and energy distributions of single-carrier traps in GaAs-AlxGa1-x As heterostructuresSakamoto, T. et al. | 1996
- 77
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Photoluminescence from point contact structures -- Direct observation of electron flowNagamune, Y. et al. | 1996
- 82
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Single-electron transistors with quantum dotsHaug, R.J. et al. | 1996
- 87
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Single-electron transport in nanostructure systemsBarker, J.R. et al. | 1996
- 92
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Room temperature operated single electron transistor made by STM-AFM nano-oxidation processMatsumoto, K. et al. | 1996
- 95
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Characterization of precisely width-controlled Si quantum wires fabricated on SOI substratesHiramoto, T. et al. | 1996
- 98
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Microwave modulation of Coulomb-blockade oscillations in a quantum dotFujii, K. et al. | 1996
- 102
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Dependence of Coulomb blockade in ultrasmall single tunnel junctions on tunnel resistanceShimazu, Y. et al. | 1996
- 105
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Co-tunneling current in very small Si single-electron transistorsTakahashi, Y. et al. | 1996
- 109
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Observation of single electron effects using HEMTFutatsugi, T. et al. | 1996
- 112
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Design and fabrication of GaAs-AlGaAs single electron transistors based on in-plane Schottky gate control of 2DEGTomozawa, H. et al. | 1996
- 116
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Suppression of current noise due to the Coulomb correlationYamaguchi, F. et al. | 1996
- 119
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Coherence and phase sensitive measurements with a quantum dotHeiblum, M. et al. | 1996
- 122
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Magnetotransport in modulated and magnetic fieldsIye, Y. et al. | 1996
- 127
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AAS oscillations in antidot latticesNakanishi, T. et al. | 1996
- 131
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Two-dimensional electrons in modulated magnetic fieldsPeeters, F.M. et al. | 1996
- 138
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Analysis of antidot lattices with periodic orbit theoryUryu, S. et al. | 1996
- 141
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Mechanism of commensurability oscillations in anisotropic antidot latticeTsukagoshi, K. et al. | 1996
- 144
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Classical and wave-mechanical aspects of magneto-transport fluctuations in ballistic quantum dotsEdwards, G. et al. | 1996
- 148
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Transition from chaotic to regular quantum scattering in mesoscopic billiards with nominally regular geometryBird, J.P. et al. | 1996
- 152
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Experimental evidence for boundary and impurity scattering related crossover in quasi-ballistic wiresOchiai, Y. et al. | 1996
- 156
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Mesoscopic noise: Common sense viewLandauer, R. et al. | 1996
- 161
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Measurement of reduced shot noise in a quantum point contactKumar, A. et al. | 1996
- 164
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Composite Fermions: Their scattering and their spinStormer, H.L. et al. | 1996
- 170
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Temperature dependence of the bend resistance of composite fermions in narrow cross junctionsHerfort, J. et al. | 1996
- 173
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Quantum Hall effect from finite-frequency studiesEngel, L.W. et al. | 1996
- 180
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Observation of universal exponent in a high mobility two-dimensional electron system in the integer quantum Hall effectHwang, S.W. et al. | 1996
- 183
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Nonlocal nature of the breakdown of the integer quantum Hall effectsKawaguchi, Y. et al. | 1996
- 186
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Imaging of edge channels in the integer quantum Hall regime by the lateral photoelectric effectHaren, R.J.F.van et al. | 1996
- 189
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Bulk conductivity at quantum Hall plateaux by magnetocapacitance measurementOto, K. et al. | 1996
- 192
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Distribution of 'scarred' eigenfunctions in a quantum well with chaotic classical dynamics probed by resonant tunnellingWilkinson, P.B. et al. | 1996
- 197
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Nonequilibrium random telegraph switching in quantum point contactsSmith, J.C. et al. | 1996
- 202
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Supply-function dependent sequential resonant tunneling in semiconductor multiple quantum well diodesHirakawa, K. et al. | 1996
- 206
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Stark-ladder transition in a (GaAs)5-(AlAs)2 Zener tunneling diodeNagasawa, H. et al. | 1996
- 210
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Undoped spacer layer effects on the evaluation of the coherent length in GaInAs-InP resonant tunneling diodesKang, Y.C. et al. | 1996
- 213
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Room-temperature observation of multiple negative differential resistance in a metal (CoSi2)-insulator (CaF2) quantum interference transistor structureMori, K. et al. | 1996
- 216
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Theoretical base current in metal-insulator resonant tunneling transistors based on electron wave scattered by base port structureKohno, Y. et al. | 1996
- 220
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Quantum effects in mesoscopic systems of metallic tunnel junctionsMooij, J.E. et al. | 1996
- 224
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Andreev reflection and quantum transport in an S-N-S junctionTakayanagi, H. et al. | 1996
- 229
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Superconducting phase tuned sample-specific conductance fluctuationsHartog, S.G.den et al. | 1996
- 232
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Capacitance dependence of critical tunneling resistance for superconductor-insulator transition in two-dimensional network of Josephson junctionsYagi, R. et al. | 1996
- 235
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Transport properties of superconducting SET transistor with a loopKanda, A. et al. | 1996
- 238
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Effect of self-capacitance on charge Kosterlitz-Thouless transition in two-dimensional arrays of small tunnel junctionsKanda, A. et al. | 1996
- 241
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Noise and adiabatic dynamics of superconducting quantum point contactsAverin, D. et al. | 1996
- 245
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Coulomb blockade and incoherent Cooper pair tunneling in ultrasmall Josephson double junctions with external circuitsIwabuchi, S. et al. | 1996
- 249
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Temperature dependence of conductivity in multi-subband quantum wiresKawabata, A. et al. | 1996
- 252
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Quantized conductance in a mesoscopic Tomonaga-Luttinger liquidOgata, M. et al. | 1996
- 256
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AC-conductance of one-dimensional, long-range correlated electronsCuniberti, G. et al. | 1996
- 259
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Single atom scale lithography for single electron devicesAhmed, H. et al. | 1996
- 264
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GaAs AlGaAs device fabrication using MBE growth and in situ focused ion beam lithographyJones, G.A.C. et al. | 1996
- 268
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Effects of growth interruption and FIB implantation in the UHV total vacuum process for the buried mesoscopic structuresWakaya, F. et al. | 1996
- 271
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Fabrication of mesoscopic structures on n-GaAs surfaces by electrochemical scanning electron microscopeKaneshiro, C. et al. | 1996
- 276
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Nanofabrication with a metal-covered scanning tunneling microscope tipAndoh, H. et al. | 1996
- 279
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AFM fabrication of metal-oxide devices with in situ control of electrical propertiesSnow, E.S. et al. | 1996
- 282
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Possibility of hot electron detection with a scanning probe microscopeVázquez, F. et al. | 1996
- 287
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Advanced self-organized epitaxy for GaAs quantum wire arraysMiyao, M. et al. | 1996
- 291
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Size-dependent luminescence of GaAs quantum wires on vicinal GaAs (110) surfaces with giant steps formed by MBENakashima, H. et al. | 1996
- 295
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Theoretical and experimental investigation of an electron interference device using multiatomic steps on vicinal GaAs surfacesMotohisa, J. et al. | 1996
- 299
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The role of atomic hydrogen for formation of quantum dots by self-organizing process in MBEChun, Y.J. et al. | 1996
- 303
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Site control of metal dot structures on fluoride surface by electron beam exposureTsutsui, K. et al. | 1996
- 307
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A new fabrication method of ultra small tunnel junctionsOotuka, Y. et al. | 1996
- 310
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Electron transport in the quantum Hall regime in strained Si-SiGeIsmail, K. et al. | 1996
- 315
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AFM-based fabrication of Si nanostructuresCampbell, P.M. et al. | 1996
- 318
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The use of electron beam exposure and chemically enhanced vapor etching of SiO2 for nanoscale fabricationKozicki, M.N. et al. | 1996
- 323
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Fabrication of atomically defined oxide films on Si by laser molecular beam epitaxyKoinuma, H. et al. | 1996
- 326
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A novel fabrication method of Si mesoscopic structures on Al 2)O3 by selective epitaxial growth using electron beam irradiationYanagiya, S. et al. | 1996
- 330
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Guided modes in an arbitrarily oriented Si-quantum wire and their controlOkawa, Y. et al. | 1996
- 333
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Quantum transport calculations for silicon inversion layers in MOS structuresVasileska, D. et al. | 1996
- 336
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Validity of effective mass theory for energy levels in Si quantum wiresHoriguchi, S. et al. | 1996
- 339
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Theory of tunneling conductance of CDW junctionsTanaka, Y. et al. | 1996
- 342
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Carbon nanotubes: Effects of magnetic fields on lattice distortionsAjiki, H. et al. | 1996
- 346
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Optical properties of a quantum wire crystal, C5H 10)NH2PbI3Nagami, A. et al. | 1996
- 349
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Study of cyclotron resonance in very high magnetic fields and nonparabolic energy band in InGaAs-InAlAs quantum wellsKotera, N. et al. | 1996
- 352
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Magneto-photoluminescence spectra of excitons in GaP-AlP short period superlattices in high magnetic fieldsUchida, K. et al. | 1996
- 356
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Angular dependent cyclotron resonance in short period (GaAs) n)-(AlAs)n superlatticesYamanaka, K. et al. | 1996
- 360
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Conductance fluctuations in PbTe wide parabolic quantum wellsOswald, J. et al. | 1996
- 363
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High field transport properties of InAs-AlGaSb quantum wiresSasa, S. et al. | 1996
- 367
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Photon assisted transport through semiconductor quantum structures in intense terahertz electric fieldsAllen, S.J. et al. | 1996
- 373
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Electron-phonon interaction and the so-called phonon bottleneck effect in semiconductor quantum dotsInoshita, T. et al. | 1996
- 378
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Magneto-optical properties of InAs monolayers and InyAl 1-y) As self-assembled quantum dots in Ga(Al)As matricesWang, P.D. et al. | 1996
- 384
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Resonance of electronic states and indirect excitons in an asymmetric triple quantum well structureSawaki, N. et al. | 1996
- 387
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Tunneling and interference of electronic states in double quantum wellYamaguchi, M. et al. | 1996
- 390
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Exciton binding and delocalization in T-shaped quantum wiresBryant, G.W. et al. | 1996
- 393
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Light emission of quantum-well-exciton polaritons in single quantum wellsKatayama, S. et al. | 1996
- 397
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Physical properties of few electron mesoscopic rings: Persistent currents, optical absorption and Raman scatteringWendler, L. et al. | 1996
- 400
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Fabrication processes for low threshold InGaAs vertical-cavity surface-emitting lasersMukaihara, T. et al. | 1996
- 404
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Light emission from vertical-microcavity quantum dot laser structuresNishioka, M. et al. | 1996
- 407
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Quantum mechanical description of spontaneous emission in a microcavity in terms of admittanceTakahashi, I. et al. | 1996
- 411
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Spatially ununiform gain in MQW lasers caused by nonequilibrium carrier transportTsuchiya, H. et al. | 1996
- 415
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Nanofabrication of GaInAsP-InP 2-dimensional photonic crystals by a methane-based reactive ion beam etchingBaba, T. et al. | 1996
- 419
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Author Index| 1996
- 427
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Subject Index| 1996
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Symposium Photograph| 1996
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Contents| 1996
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Opening Address| 1996
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Preface| 1996