Trade-offs between tunneling and hot-carrier injection in short channel floating gate MOSFETs (Englisch)
- Neue Suche nach: Selmi, L.
- Neue Suche nach: Selmi, L.
- Neue Suche nach: Ghetti, A.
- Neue Suche nach: Bez, R.
- Neue Suche nach: Sangiorgi, E.
In:
Microelectronic engineering
;
36
, 1-4
; 293-296
;
1997
-
ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Trade-offs between tunneling and hot-carrier injection in short channel floating gate MOSFETs
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Beteiligte:
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Erschienen in:Microelectronic engineering ; 36, 1-4 ; 293-296
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Verlag:
- Neue Suche nach: Elsevier
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Erscheinungsort:Amsterdam [u.a.]
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Erscheinungsdatum:1997
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ISSN:
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ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 535/5670
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Schlagwörter:
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Klassifikation:
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Datenquelle:
Inhaltsverzeichnis – Band 36, Ausgabe 1-4
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After CMOS: In anticipation of innovative devices on SiGautier, J. et al. | 1997
- 13
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Reliability and integration of ultra-thin gate dielectrics for advanced CMOSBuchanan, D.A. et al. | 1997
- 21
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Relation between trap creation and breakdown during tunnelling current stressing of sub 3 nm gate oxideDepas, M. et al. | 1997
- 25
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Defect instability in ultra-thin oxides on siliconXie, L. et al. | 1997
- 29
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Compositional and mechanistic aspects of ultrathin oxynitride film growth on Si(100)Lu, H.C. et al. | 1997
- 35
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Positron annihilation as a tool for the study of defects in the MOS systemNijs, J.M.M.de et al. | 1997
- 43
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Evolution of electronically active defects during the formation of Si-SiO2 interface monitored by combined surface photovoltage and spectroscopic ellipsometry measurementsAngermann, H. et al. | 1997
- 47
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Charge pumping characterization of transistors with common gate, source and bulk padsReimbold, G. et al. | 1997
- 53
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Physical and electrical analysis of silicon dioxide thin films produced by electron-cyclotron resonance chemical-vapour depositionLandheer, D. et al. | 1997
- 61
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Use of carbon-free Ta2O5 thin-films as a gate insulatorDevine, R.A.B. et al. | 1997
- 65
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Electrical reliability of ultra thin remote plasma deposited oxides on siliconRagnarsson, L.-°A et al. | 1997
- 69
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UV-deposited silicon nitride coupled with XeF2 surface cleaning for III-V optoelectronic device passivationChun, L.S.How Kee et al. | 1997
- 73
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Plasma-assisted formation of low defect density silicon carbide-silicon dioxide, SiC-SiO2, interfacesGölz, A. et al. | 1997
- 79
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Silicon nanocrystal formation in thin thermal-oxide films by very-low energy Si+ ion implantationNormand, P. et al. | 1997
- 83
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Location of individual traps in DRAM cell transistors by charge pumping techniquePierunek, S. et al. | 1997
- 87
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High Temperature Oxide (HTO) for non volatile memories applicationsCandelier, Ph et al. | 1997
- 91
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Properties of Al2O3-films deposited on silicon by atomic layer epitaxyEricsson, P. et al. | 1997
- 95
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Device physics and simulation of metal-ferroelectric-film-p-type silicon capacitorsMassoud, H.Z. et al. | 1997
- 99
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A reliable lifetime prediction in deep submicron N-channel SOI MOSFETsRenn, S.H. et al. | 1997
- 99
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A reliable lifetime prediction in deep submicron N-channel SOl MOSFETsRenn, S. H. / Pelloie, J. L. / Balestra, E. et al. | 1997
- 103
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Light emission during direct and Fowler-Nordheim tunneling in ultra thin MOS tunnel junctionsCartier, E. et al. | 1997
- 107
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Blue and violet photoluminescence from highdose Si+- and Ge+-implanted silicon dioxide layersRebohle, L. et al. | 1997
- 111
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Electrical, optical and luminescent properties of Si3N4 films containing Si nanoclustersBaru, V.G. et al. | 1997
- 115
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Characterization of silicon LEDs integrated with oxidized porous silicon SOIBalucani, M. et al. | 1997
- 115
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Characterization of silicon LEDs integrated with oxidized porous silicon SOlBalucani, M. / Bondarenko, V. / Dorofeev, A. / Ermalitski, F. / Kazuchits, N. / Maiello, G. / Masini, L. / Melnikov, S. / La Monica, S. / Volchek, S. et al. | 1997
- 119
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Electrical properties of end-group functionalised Self-Assembled MonolayersCollet, J. et al. | 1997
- 123
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Enriching of the Si3N4-thermal oxide interface by excess silicon in ONO structuresGritsenko, V.A. et al. | 1997
- 125
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Bohm trajectories for the modeling of tunneling devicesSuñé, J. et al. | 1997
- 129
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Impurity gettering effects in separation-by-implanted-oxygen (SIMOX) wafers: What getters what, where and howYankov, R.A. et al. | 1997
- 133
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The planar photomagnetic effect in SOl structure and magnetosensor based on itDobrovolsky, V. N. et al. | 1997
- 133
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The planar photomagnetic effect in SOI structure and magnetosensor based on itDobrovolsky, V.N. et al. | 1997
- 137
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The characterisation of Bonded Silicon on Insulator (BSOI) structures using low temperature scanning cathodoluminescence (CL) and secondary ion mass spectrometry (SIMS)Williams, G.M. et al. | 1997
- 141
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A coupled I(V) and charge-pumping analysis of stress induced leakage currents in 5 nm-thick gate oxidesGoguenheim, D. et al. | 1997
- 145
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Stress induced leakage current in ultra-thin gate oxides after constant current stressScarpa, A. et al. | 1997
- 149
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Analysis of near-interfacial SiO2 traps using photon stimulated electron tunnelingAfanas'ev, V.V. et al. | 1997
- 153
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Electrical properties of ultrathin RTCVD oxinitride films in n and p-channel MOSFET'sManeglia, Y. et al. | 1997
- 157
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Quasi-breakdown in ultrathin gate dielectricsHalimaoui, A. et al. | 1997
- 161
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Oxide thickness dependence of hole trap generation in MOS structures under highfield electron injectionBrozek, T. et al. | 1997
- 167
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SiO2 as an insulator for SiC devicesHarris, C.I. et al. | 1997
- 175
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Thin oxide growth on 6H-silicon carbideVathulya, V.R. et al. | 1997
- 179
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Silicon nitride as dielectric in the low temperature SiGe HBT processingRen, Q.W. et al. | 1997
- 183
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Capacitance measurements on SiC MOS structures for the determination of interface propertiesSadeghi, M. et al. | 1997
- 187
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The role of oxygen and nitrogen at the SiO2-SiC interfaceGölz, A. et al. | 1997
- 193
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Thermal annealing behavior of defects induced by ion implantation in thermally grown SiO2 filmsSeol, K.S. et al. | 1997
- 197
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Properties of E~' center in microelectronic grade oxide filmsZvanut, M. E. / Macfarlane, P. J. et al. | 1997
- 197
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Properties of Ed' center in microelectronic grade oxide filmsZvanut, M.E. et al. | 1997
- 201
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Point defect generation in SiO2 by interaction with SiO at elevated temperaturesStesmans, A. et al. | 1997
- 207
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Minimization of sub-oxide transition regions at Si-SiO2 interfaces by 900(degree)C rapid thermal annealingLucovsky, G. et al. | 1997
- 207
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Minimization of sub-oxide transition regions at Si-SiO~2 interfaces by 900C rapid thermal annealingLucovsky, G. / Banerjee, A. / Hinds, B. / Claflin, B. / Koh, K. / Yang, H. et al. | 1997
- 211
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Nitridation impact on thin oxide charge trappingAlessandri, M. et al. | 1997
- 215
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Impact of the polysilicon doping level on the properties of the silicon-oxide interface in polysilicon-oxide-silicon capacitor structuresLeveugle, C. et al. | 1997
- 219
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Potential fluctuations due to Pb centres at the Si-SiO2 interfaceUren, M.J. et al. | 1997
- 223
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Statistical evaluation of random telegraph signal amplitudes in sub-mm MOSFETsMueller, H.H. et al. | 1997
- 223
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Statistical evaluation of random telegraph signal amplitudes in sub-m MOSFETsMueller, H. H. / Schulz, M. et al. | 1997
- 227
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Generation and annealing of hot hole induced interface statesAl-kofahi, I.S. et al. | 1997
- 233
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Basic mechanisms involved in the Smart-Cut(R) processAspar, B. et al. | 1997
- 233
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Basic mechanisms involved in the Smart-Cut processAspar, B. / Bruel, M. / Moriceau, H. / Maleville, C. / Poumeyrol, T. / Papon, A. M. / Claverie, A. / Benassayag, G. / Auberton-Herve, A. J. / Barge, T. et al. | 1997
- 241
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Radiation-induced H+ trapping in buried SiO2Vanheusden, K. et al. | 1997
- 245
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Electrical investigation of the silicon-diamond interfaceEdholm, B. et al. | 1997
- 249
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Rapid annealing measurements in fully-depleted NMOS-SOIGruber, O. et al. | 1997
- 255
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Gate oxide characterization with ballistic electron emission microscopyLudeke, R. et al. | 1997
- 263
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The role of substrate cartier generation in determining the electric field in the oxide of MOS capacitors biased in the Fowler-Nordheim tunneling regimeMassoud, H. Z. / Shiely, J. P. et al. | 1997
- 263
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The role of substrate carrier generation in determining the electric field in the oxide of MOS capacitors biased in the Fowler-Nordheim tunneling regimeMassoud, H.Z. et al. | 1997
- 267
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Impact of oxide charge buildup on Fowler-Nordheim tunneling current characteristics in a MOS structureKies, R. et al. | 1997
- 271
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Identification of the microscopic structure of new hot carrier damage centers in short channel MOSFETsBillman, C.A. et al. | 1997
- 271
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Identification of the microscopic structure of new hot cartier damage centers in short channel MOSFETsBillman, C. A. / Lenahan, P. M. / Weber, W. et al. | 1997
- 277
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Hot carrier effects in FLASHEitan, B. et al. | 1997
- 285
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Effects of hot-carrier degradation in analog CMOS circuitsThewes, R. et al. | 1997
- 293
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Trade-offs between tunneling and hot-carrier injection in short channel floating gate MOSFETsSelmi, L. et al. | 1997
- 297
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Light emission microscopy for thin oxide reliabilityLeroux, C. / Blachier, D. / Briere, O. / Reimbold, G. et al. | 1997
- 297
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Light emission microscopy for thin oxide reliability analysisLeroux, C. et al. | 1997
- 301
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Impact of tunnel-oxide nitridation on endurance and read-disturb characteristics of Flash E2PROM devicesBlauwe, J.De et al. | 1997
- 305
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Influences of the different degradation mechanisms in AC-stressed p-MOSFET's during pass transistor operationBravaix, A. et al. | 1997
- 309
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New insights on the charging and discharging of electron traps created by homogeneous electron injection in gate oxideAuriel, G. et al. | 1997
- 313
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Impact of boron penetration on gate oxide reliability and device lifetime in p+-poly PMOSFETsKim, B.Y. et al. | 1997
- 317
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Explanation for the oxide thickness dependence of breakdown characteristics of metal-oxide-semiconductor structuresDiMaria, D.J. et al. | 1997
- 321
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Q--bd dependencies of ultrathin gate oxides on large area capacitorsPaulzen, G.M. et al. | 1997
- 325
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Quantitative model of the thickness dependence of breakdown in ultra-thin oxidesStathis, J.H. et al. | 1997
- 329
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On the relationship between stress induced leakage currents and catastrophic breakdown in ultra-thin SiO2 based dielectricsBuchanan, D.A. et al. | 1997
- 335
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Advantages and limitations of silicon-on-insulator technology in radiation environmentsSchwank, J.R. et al. | 1997
- 343
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Properties of the buried oxide layer in SIMOX structuresRevesz, A.G. et al. | 1997
- 351
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Contactless measurement of the Si-buried oxide interfacial charges in SOI wafers with surface photovoltage techniqueNauka, K. et al. | 1997
- 359
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Submicron SOI-MOSFETs for high temperature operation (300-600K)Reichert, G. et al. | 1997
- 363
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Research of high-temperature instability processes in buried dielectric of full depleted SOl MOSFET'sNazarov, A. N. / Colinge, J.-P. / Barchuk, I. P. et al. | 1997
- 363
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Research of high-temperature instability processes in buried dielectric of full depleted SOI MOSFET'sNazarov, A.N. et al. | 1997
- 367
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Diffusion model for high temperature off-state currents in SOI MOSFETsRudenko, T.E. et al. | 1997
- 367
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Diffusion model for high temperature off-state currents in SOl MOSFETsRudenko, T. E. / Kilchitskaya, V. I. / Rudenko, A. N. et al. | 1997
- 371
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Determination of the thicknesses of gate oxide and active layer in SOI structures from CV measurementsGibki, J. et al. | 1997
- 375
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Analytical modeling of the substrate effect on accumulation-mode SOI pMOSFETS at room temperature and at 77 KPavanello, M.A. et al. | 1997
- 375
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Analytical modeling of the substrate effect on accumulation-mode SOl pMOSFETS at room temperature and at 77 KPavanello, M. A. / Martino, J. A. / Colinge, J.-P. et al. | 1997
- 379
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Electron energy quantization effects in the very thin film GAA SOI transistorMajkusiak, B. et al. | 1997
- 383
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Thin BOX SIMOX silicon-on-insulator substrates for radiation tolerant advanced electronicsAllen, L.P. et al. | 1997
- 387
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Charge trapping in SIMOX and UNIBOND(R) oxidesGruber, O. et al. | 1997
- 387
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Charge trapping in SIMOX and UNIBOND oxidesGruber, O. / Paillet, P. / Autran, J. L. / Aspar, B. / Auberton-Herve, A. J. et al. | 1997
- 391
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Stacking fault reduction in Silicon-on-Insulator (SOI) islands produced by selective epitaxial growth (SEG) of silicon using a thermally nitrided SiO2 field insulatorNeudeck, G.W. et al. | 1997
- 395
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Detailed characterization of Unibond material D. Munteanu, C. Maleville, S. Cristoloveanu, H. Moriceau, B. Aspar, C. Raynaud, O. Faynot, J.-L. Pelloie and A.-J. Auberton-HervePelloie, J.-L. / Auberton-Herve, A.-J. et al. | 1997
- 395
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Detailed characterization of Unibond materialMunteanu, D. et al. | 1997
- 399
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Author index| 1997
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Committees| 1997
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Preface| 1997