High-power continuous-wave operation of a InGaAs-AlGaAs quantum dot laser (Englisch)
- Neue Suche nach: Maximov, M.V.
- Neue Suche nach: Maximov, M.V.
- Neue Suche nach: Shernyakov, Yu M.
- Neue Suche nach: Tsatsul'nikov, A.F.
- Neue Suche nach: Lunev, A.V.
- Neue Suche nach: Sakharov, A.V.
- Neue Suche nach: Ustinov, V.M.
- Neue Suche nach: Egorov, A.Yu
- Neue Suche nach: Zhukov, A.E.
- Neue Suche nach: Kovsh, A.R.
- Neue Suche nach: Kop'ev, P.S.
- Neue Suche nach: Asryan, L.V.
- Neue Suche nach: Alferov, Zh I.
- Neue Suche nach: Ledentsov, N.N.
- Neue Suche nach: Bimberg, D.
- Neue Suche nach: Kosogov, A.O.
- Neue Suche nach: Werner, P.
In:
Journal of applied physics
;
83
, 10
; 5561-5563
;
1998
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:High-power continuous-wave operation of a InGaAs-AlGaAs quantum dot laser
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Beteiligte:Maximov, M.V. ( Autor:in ) / Shernyakov, Yu M. / Tsatsul'nikov, A.F. / Lunev, A.V. / Sakharov, A.V. / Ustinov, V.M. / Egorov, A.Yu / Zhukov, A.E. / Kovsh, A.R. / Kop'ev, P.S.
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Erschienen in:Journal of applied physics ; 83, 10 ; 5561-5563
-
Verlag:
- Neue Suche nach: AIP
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Erscheinungsort:Melville, NY
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Erscheinungsdatum:1998
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ISSN:
-
ZDBID:
-
Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 33.00 / 50.30
- Weitere Informationen zu Basisklassifikation
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Schlagwörter:
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Klassifikation:
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Datenquelle:
Inhaltsverzeichnis – Band 83, Ausgabe 10
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- 5573
-
Hydrostatic pressure studies of GaAs tunnel diodesBeji, L. / el Jani, B. / Gibart, P. / Portal, J. C. / Basmaji, P. et al. | 1998
- 5576
-
A deep level transient spectroscopy characterization of defects induced in epitaxially grown n-Si by low-energy He-ion bombardmentAuret, F. D. / Deenapanray, P. N. K. / Goodman, S. A. / Meyer, W. E. / Myburg, G. et al. | 1998
- 5579
-
Effects of the surface deposition of nitrogen on the thermal oxidation of silicon in O2Baumvol, I. J. R. / Salgado, T. D. M. / Stedile, F. C. / Radtke, C. / Krug, C. et al. | 1998
- 5582
-
Coulomb blockade-based nanothermometry in strong magnetic fieldsPekola, J. P. / Toppari, J. J. / Kauppinen, J. P. / Kinnunen, K. M. / Manninen, A. J. / Jansen, A. G. M. et al. | 1998
- 5585
-
High-coercivity Sm2(Fe,Al,Mo)17C1.5 ribbons with addition of MoTang, W. / Jin, Z. Q. / Yin, J. H. / Zhang, J. R. / Zhang, S. Y. / Du, Y. W. et al. | 1998
- 5588
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Evaluation of adhesion of diamond coating by thermal quench methodFan, Qi Hua / Fernandes, A. / Pereira, E. / Gra´cio, J. et al. | 1998
- 5591
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Comment on “A model of hole trapping in SiO2 films on silicon” [J. Appl. Phys. 81, 6822 (1997)]Devine, R. A. B. / Warren, W. L. / Karna, S. et al. | 1998
- 5593
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Response to “Comment on ‘A model of hole trapping in SiO2 films on silicon’ ” [J. Appl. Phys. 83, 5591 (1998)]Lenahan, P. M. / Conley, J. F. et al. | 1998
- 5595
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Erratum: “High accuracy Raman measurements using the Stokes and anti-Stokes lines” [J. Appl. Phys. 82, 3976 (1997)]Trzeciakowski, Witold / Martine´z-Pastor, Juan / Cantarero, Andre´s et al. | 1998
- 5596
-
CUMULATIVE AUTHOR INDEX| 1998