Step-free surface and interface by finite area metalorganic vapor phase epitaxy (Englisch)
- Neue Suche nach: Nishida, T.
- Neue Suche nach: Nishida, T.
- Neue Suche nach: Akasaka, T.
- Neue Suche nach: Yamauchi, Y.
- Neue Suche nach: Kobayashi, N.
In:
Journal of crystal growth
;
19990
; 459-465
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Step-free surface and interface by finite area metalorganic vapor phase epitaxy
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Beteiligte:
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Erschienen in:Journal of crystal growth ; 19990 ; 459-465
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Verlag:
- Neue Suche nach: Elsevier
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Erscheinungsort:Amsterdam [u.a.]
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ISSN:
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ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 38.31 / 33.61 / 35.90
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 535/3475
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Schlagwörter:
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Klassifikation:
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Datenquelle:
Inhaltsverzeichnis – Band 19990
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Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
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Reconstructions of the GaAs (1 1 3) surfacePristovsek, M. et al.
- 1
-
The growth of epitaxial aluminium on As containing compound semiconductorsPilkington, S.J. et al.
- 6
-
Natural formation of multiatomic steps on patterned vicinal substrates by MOVPE and application to GaAs QWR structuresOda, Yasuhiro et al.
- 13
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Effect of Te doping on step structure and ordering in GaInPLee, S.H. et al.
- 13
-
AlInP benchmarks for growth of AlGaInP compounds by organometallic vapor-phase epitaxyBertness, K.A. et al.
- 21
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Surface characterization of ordered (GaIn)PPietzonka, I. et al.
- 23
-
Insensitivity of self-formed quantum dots to substrate surface roughnessPan, Dong et al.
- 26
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Beryllium doping and silicon amphotericity in (1 1 0) GaAs-based heterostructures: structural and optical propertiesXu, J. et al.
- 28
-
Gallium arsenide and indium arsenide surfaces produced by metalorganic vapor-phase epitaxyLi, L. et al.
- 33
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Metal organic vapour phase epitaxial growth and characterization of (GaIn)P layers grown with different P-containing precursorsPietzonka, I. et al.
- 34
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An X-ray standing wave study of ultrathin InAs films in GaAs(0 0 1) grown by atomic layer epitaxyGupta, J.A. et al.
- 41
-
Relation between GaAs surface morphology and incorporation of hexagonal GaN into cubic GaNTachibana, Hiroyuki et al.
- 41
-
Step-flow MOVPE of GaN on SiC substratesNishida, Toshio et al.
- 47
-
Synthesis of gallium nitride by ammonia injection into gallium meltShibata, M. et al.
- 48
-
Annealing effect on C-doped InGaAs grown by metalorganic chemical vapor depositionWatanabe, Noriyuki et al.
- 53
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A study of the vacancy-defect distribution in a GaAs-AlxGa1-xAs multi-layer structure grown at low temperatureFleischer, S. et al.
- 54
-
Si and C d-doping for device applicationsLi, G. et al.
- 58
-
Si-doping into GaAs grown by metalorganic vapor phase epitaxy using bisdiisopropylaminosilaneOchimizu, Hirosato et al.
- 62
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Finite element analysis of dislocation density during bulk single crystal growth (effect of doping atoms in InP single crystal)Miyazaki, N. et al.
- 63
-
Intrinsic and oxygen-related deep level defects in In0.5(AlxGa1-x)0.5P grown by metal-organic vapor phase epitaxyCederberg, J.G. et al.
- 67
-
Miscibility gap calculation for Ga1-xInxNyAs1-y including strain effectsSchlenker, D. et al.
- 69
-
Growth of Ru doped semi-insulating InP by low pressure metalorganic chemical vapor depositionDadgar, A. et al.
- 71
-
Synthesis and growth of PbTe crystals at low temperature and their characterizationMunoz, V. et al.
- 74
-
Doping characteristics of n-type InP using phenylsilane and TBP by MOVPEYamauchi, Yoshinori et al.
- 77
-
The growth of ZnSe by photo-assisted metalorganic chemical vapor deposition (MOCVD)Yu, Guangyou et al.
- 79
-
Zinc doping of InP by metal organic vapour phase diffusion (MOVPD)van Geelen, A. et al.
- 83
-
Growth of ZnSe single crystal by CVT method with self-moving convection shieldFujiwara, S. et al.
- 85
-
MOVPE of AlAsSb using tritertiarybutylaluminumGiesen, Ch et al.
- 88
-
High-quality silicon-insulator heteroepitaxial structures formed by molecular beam epitaxy using Al2O3 and SiJung, Young-Chul et al.
- 91
-
Si-doping of MOVPE grown InP and GaAs by using the liquid Si source ditertiarybutyl silaneLeu, S. et al.
- 97
-
Er doping of Si and Si0.88Ge0.12 using Er2O3 and ErF3 evaporation during molecular beam epitaxy: - A transmission electron microscopy studyJoelsson, K.B. et al.
- 98
-
C- and O-incorporation in (AlGa)As epitaxial layers grown by MOVPE using TBAsLeu, S. et al.
- 105
-
Erbium-doped GaAs grown using the novel precursor tris(3,5-di-tert-butylpyrazolato)bis(4-tert-butylpyridine)erbiumCederberg, J.G. et al.
- 111
-
Study on the oxygen concentration reduction in heavily Sb-doped siliconLiu, Caichi et al.
- 112
-
Post-growth Zn diffusion into InGaAs-InP in a LP-MOVPE reactorFranke, D. et al.
- 115
-
Prediction of concentration profile for P doping in Si gas-source molecular beam epitaxyHirose, F. et al.
- 117
-
InGaP-GaAs hole barrier asymmetry determined by (0 0 2) X-ray reflections and p-type DB-RTD hole transportVelling, P. et al.
- 122
-
High temperature superconducting thin films on CaGdAlO4 substratesKleptsyn, V. et al.
- 124
-
Contributions to understanding the optical properties of partially ordered (Al0.3Ga0.7)0.52In0.48PSchmidt, R. et al.
- 126
-
Continuous and time-resolved photoluminescence study of lead sulfide nanocrystals, embedded in polymer filmLifshitz, E. et al.
- 132
-
Control of dopant distribution profiles in GaInP laser diodes with Mg- and Se-doped AlInP cladding layersWinterhoff, R. et al.
- 135
-
Optical determination of the size distribution of CuCl nanocrystals in NaClHaselhoff, M. et al.
- 138
-
Growth of InGaAsP in a stagnation flow vertical reactor using TBP and TBAKim, In et al.
- 141
-
Structural evolution of lithium niobate deposited on sapphire (0 0 0 1): from early islands to continuous filmsVeignant, Franck et al.
- 144
-
Development of a glass-bonded compliant substrateHansen, D.M. et al.
- 151
-
The dependence of cobalt concentration on the growth temperature in synthetic blue quartzLee, Young Kuk et al.
- 151
-
Real-time monitoring of MOVPE device growth by reflectance anisotropy spectroscopy and related optical techniquesZettler, J.-T. et al.
- 156
-
Impurity effect of iron(III) on the growth of potassium sulfate crystal in aqueous solutionKubota, Noriaki et al.
- 163
-
In situ characterisation of MOVPE by surface photoabsorption - I. Substrate oxide desorptionAllwood, D.A. et al.
- 164
-
Formation, growth and dissociation of clathrate hydrate crystals in liquid water in contact with a hydrophobic hydrate-forming liquidOhmura, Ryo et al.
- 168
-
In situ characterisation of MOVPE by surface photoabsorption - II. Interface monitoringKlipstein, P.C. et al.
- 174
-
Surface photoabsorption interferometry studies of the growth of InP and GaP on glassYates, R.F. et al.
- 174
-
The influence of additives on the crystal habit of gibbsiteSeyssiecq, Isabelle et al.
- 181
-
Study of some K2W2O7-KGd1-xLnx(WO4)2 systems to be used for flux growth of doped KGd(WO4)2 single crystalsManuilov, N. et al.
- 181
-
In situ monitoring of GaSb, GaInAsSb, and AlGaAsSbVineis, C.J. et al.
- 187
-
In-situ monitoring of GaN MOVPE by shallow-angle reflectance using ultraviolet lightKobayashi, Yasuyuki et al.
- 192
-
Growth and in situ monitoring of GaN using IR interference effectsConsidine, L. et al.
- 199
-
In situ etching of GaAs by AsCl3 for regrowth on AlGaAs in metalorganic vapor-phase epitaxyHou, H.Q. et al.
- 205
-
MOVPE growth of single monolayers of InAs in GaAs studied by time-resolved reflectance difference spectroscopyGupta, J.A. et al.
- 211
-
In situ characterization of GaAs growth in nitrogen atmosphere during MOVPE: a comparison to hydrogen atmosphereHardtdegen, H. et al.
- 217
-
Growth monitoring of GaInP-GaAs heterojunction bipolar transistors by reflectance anisotropy spectroscopyKurpas, P. et al.
- 223
-
In situ monitoring and control of InGaP growth on GaAs in MOVPEZorn, M. et al.
- 228
-
Surface photoabsorption monitoring of III-V and GaN MOVPE surfaces ;Kobayashi, Naoki et al.
- 234
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Time-resolved reflectance difference spectroscopy of InAs growth under alternating flow conditionsArès, R. et al.
- 242
-
High-power InGaN-based blue laser diodes with a long lifetimeNakamura, Shuji et al.
- 248
-
Progress in crystal growth and future prospects of group III nitrides by metalorganic vapor-phase epitaxyAkasaki, Isamu et al.
- 252
-
Structural and optical emission characteristics of InGaN thin layers and the implications for growing high-quality quantum wells by MOCVDKobayashi, J.T. et al.
- 258
-
Effect of the growth rate and the barrier doping on the morphology and the properties of InGaN-GaN quantum wellsKeller, S. et al.
- 265
-
MOVPE growth and characterization of Mg-doped GaNKozodoy, P. et al.
- 270
-
Self-compensation in Mg doped p-type GaN grown by MOCVDObloh, H. et al.
- 274
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The influence of Mg-concentration and carrier gas on the electrical and optical properties of GaN: Mg grown by MOVPESchineller, B. et al.
- 280
-
AlN and AlGaN growth using low-pressure metalorganic chemical vapor depositionNakamura, Fumihiko et al.
- 286
-
Influence of buffer layers on the In-content of GaInN layersOff, J. et al.
- 291
-
OMVPE growth and gas-phase reactions of AlGaN for UV emittersHan, J. et al.
- 297
-
High quality III-nitride material grown in mass production MOCVD systemsSchoen, O. et al.
- 304
-
Growth and characterization of GaN on LiGaO2Duan, Shukun et al.
- 309
-
Structural and optical properties of AlInN and AlGaInN on GaN grown by metalorganic vapor phase epitaxyYamaguchi, Shigeo et al.
- 314
-
Relationship between physical properties and gas purification in GaN grown by metalorganic vapor phase epitaxydi Forte-Poisson, M.A. et al.
- 319
-
GaN growth on ozonized sapphire(0 0 0 1) substrates by MOVPEHonda, T. et al.
- 323
-
Micro Raman and micro photoluminescence study of cubic GaN grown on 3C-SiC(0 0 1) substrates by metalorganic vapor phase epitaxyYaguchi, Hiroyuki et al.
- 328
-
Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor depositionMarchand, H. et al.
- 333
-
Study of the epitaxial-lateral-overgrowth (ELO) process for GaN on sapphireYu, Zhonghai et al.
- 340
-
Selective-area and lateral epitaxial overgrowth of III-N materials by metalorganic chemical vapor depositionDupuis, R.D. et al.
- 346
-
Recent progress in GaInAsSb thermophotovoltaics grown by organometallic vapor-phase epitaxyWang, C.A. et al.
- 356
-
Progress in the growth of mid-infrared InAsSb emitters by metal-organic chemical vapor depositionBiefeld, R.M. et al.
- 363
-
Ternary and quaternary antimonide devices for thermophotovoltaic applicationsHitchcock, C.W. et al.
- 373
-
Low-pressure metal organic vapour-phase epitaxy and characterization of strained InAs(P)-InAsSb superlattices for infrared emittersBehres, A. et al.
- 378
-
The influence of stoichiometry on the growth of tellurium-doped indium antimonide for magnetic field sensorsPartin, D.L. et al.
- 385
-
p-Type and n-type doping in GaSb and Ga0.8In0.2Sb layers grown by metalorganic vapor phase epitaxyEhsani, H. et al.
- 391
-
Investigations of (GaIn)(NAs) bulk layers and (GaIn)(NAs)-GaAs multiple quantum well structures grown using tertiarybutylarsine (TBAs) and 1,1-dimethylhydrazine (UDMHy)Höhnsdorf, F. et al.
- 397
-
Phase separation in InGaN-GaN multiple quantum wells and its relation to brightness of blue and green LEDsTran, C.A. et al.
- 401
-
Photocurrent of 1 eV GaInNAs lattice-matched to GaAsGeisz, J.F. et al.
- 409
-
1-eV solar cells with GaInNAs active layerFriedman, D.J. et al.
- 416
-
MOVPE growth of strained InGaAsN-GaAs quantum wellsSaito, Hisao et al.
- 421
-
GaNAs-GaInAs short-period superlattice quantum well structures grown by MOCVD using TBAs and DMHyMiyamoto, Tomoyuki et al.
- 427
-
Growth of GaAsN-GaAs, GaInAsN-GaAs and GaInAsN-GaAs quantum wells by low-pressure organometallic chemical vapor depositionBhat, R. et al.
- 438
-
Nonlinear dependence of N incorporation on In content in GaInNAsFriedman, D.J. et al.
- 444
-
Exploitation of surface selective growth in metalorganic growth technologies for device applicationsVeuhoff, Eberhard et al.
- 459
-
Step-free surface and interface by finite area metalorganic vapor phase epitaxyNishida, T. et al.
- 466
-
Narrow-stripe selective growth of high-quality MQWs by atmospheric-pressure MOVPEMori, Kazuo et al.
- 474
-
Selective area metalorganic vapor phase epitaxy growth of prism-shaped GaAs resonators for folded cavity surface emitting lasersStrupiñski, W. et al.
- 479
-
Planar selective regrowth of high resistivity semi-insulating InP(Fe) by LP-MOVPE for buried lasers using TBPSik, H. et al.
- 485
-
Overgrowth of trenches with (AlGa)As using metalorganic vapor-phase epitaxy (MOVPE)Hofmann, L. et al.
- 490
-
InGaP-GaAs shadow-mask for optoelectronic integration and MBE regrowthVelling, P. et al.
- 495
-
Selective growth and regrowth of high Al content AlGaAs for use in BH lasersChoi, Won-Jin et al.
- 503
-
Mass-transport effect on InP corrugation shape control of DFB-LDs under atmospheric pressure MOVPEKoui, Tomoaki et al.
- 510
-
Material localisation at GaInAsP-ridge-structures selectively grown by MOMBEButendeich, R. et al.
- 516
-
Resonant self-organization in semiconductor growthTemmyo, Jiro et al.
- 524
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High-quality InAs-GaAs quantum dots grown by low-pressure metalorganic vapor-phase epitaxySagnes, I. et al.
- 530
-
GaAs cap layer growth and In-segregation effects on self-assembled InAs-quantum dots monitored by optical techniquesSteimetz, E. et al.
- 540
-
Influence of In-Ga intermixing on the optical properties of InGaAs-GaAs quantum dotsHeinrichsdorff, F. et al.
- 546
-
Sizes of self-assembled quantum dots - effects of deposition conditions and annealingJohansson, J. et al.
- 552
-
InGaAs and InAsP V-groove quantum wires using arsenic-phosphorus exchange preparationKappelt, M. et al.
- 558
-
Effect of the growth parameters on the luminescence properties of high-quality GaAs-AlGaAs multiquantum wells on (1 1 1)A substrates by metal organic vapor phase epitaxySanz-Hervás, A. et al.
- 564
-
Synthesis of CdSe quantum dot-ZnS matrix thin films via electrospray organometallic chemical vapor depositionHeine, J.R. et al.
- 569
-
MOCVD of vertically stacked CdSe-ZnSSe quantum islandsPohl, U.W. et al.
- 574
-
Photoluminescence and photoluminescence-excitation spectroscopy of GaPAsN-GaP lattice-matched multiple quantum well structuresBiwa, Goshi et al.
- 579
-
Formation and characterization of modulated two-dimensional electron gas on GaAs multiatomic steps grown by metalorganic vapor phase epitaxyAkabori, Masashi et al.
- 586
-
Self-limiting effects of flow rate modulation epitaxy of GaAs on patterned substrateWang, Xue-Lun et al.
- 591
-
Size control of self-assembled InP-GaInP quantum islandsPorsche, J. et al.
- 596
-
Mechanisms of self-ordering of nanostructures in nonplanar OMCVD growthBiasiol, G. et al.
- 603
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Super-lattice AlAs-AlInAs for lateral-oxide current confinement in InP-based lasersOhnoki, N. et al.
- 609
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High-power, single-mode, Al-free InGaAs(P)-InGaP-GaAs distributed feedback diode lasersMawst, L.J. et al.
- 617
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Effect of interface roughness on performance of AlGaAs-InGaAs-GaAs resonant tunneling diodesLi, Jiang et al.
- 624
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Etching of InP-based MQW laser structure in a MOCVD reactor by chlorinated compoundsBertone, D. et al.
- 630
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GaAs-based VCSEL-structures with strain-compensated (GaIn)As-Ga(PAs)-MQWH active regions grown by using TBAs and TBPEllmers, C. et al.
- 637
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Very high compositional homogeneity of 1.55 mm strain-compensated InGaAsP MQW structures by MOVPE under N2 atmosphereJochum, S. et al.
- 644
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Highly uniform AlAs-GaAs, InGa(Al)P-GaAs and InGaAs(P)-InP structures grown in a three 2"wafer close-spaced vertical rotating disk reactorVanhollebeke, K. et al.
- 648
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MOCVD growth of high power 0.5 W 35 GHz MMICsFerguson, I.T. et al.
- 655
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High quality InGaAs-AlGaAs lasers grown on Ge substratesD'Hondt, M. et al.
- 660
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Optimization of p-dopant profiles for GaInAsP MQW laser structures in MOMBEKröner, P. et al.
- 668
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The influence of trimethylindium impurities on the performance of InAlGaAs single quantum well lasersRoberts, J.S. et al.
- 676
-
MOVPE growth of tunable DBR laser diode emitting at 1060 nmBugge, F. et al.
- 681
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Doping optimizations for InGaAs-InP composite channel HEMTsDécobert, J. et al.
- 687
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Comparison of single- and double-barrier pseudomorphic InGaP-InGaAs HFETsXu, X.G. et al.
- 694
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Ordering in GaxIn1-xAsyP1-y grown on GaAs by metalorganic vapour-phase epitaxyKnauer, A. et al.
- 700
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Design, growth and performance of different QW structures for improved 1300 nm InGaAsP lasersSilfvenius, Christofer et al.
- 706
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Ferroelectric oxide epitaxial thin films: synthesis and non-linear optical propertiesWessels, B.W. et al.
- 711
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In situ thermal nitridation of GaAs using metalorganic vapor phase epitaxySun, Jingxi et al.
- 718
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Thin films of CdTe-CdS grown by MOCVD for photovoltaicsBerrigan, R.A. et al.
- 725
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Simulation of flow and growth phenomena in a close-spaced reactorMihopoulos, Theodoros G. et al.
- 733
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A reaction-transport model for AlGaN MOVPE growthMihopoulos, Theodoros G. et al.
- 740
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Modeling study of silicon incorporation from SiBr4 in GaAs layers grown by chemical beam epitaxyShi, B.Q. et al.