Devices - Parametric Description of the Effect of Electron Irradiation on Recombination Lifetime in Silicon Layers: An Experimental Approach (Unbekannt)
- Neue Suche nach: Daliento, S.
- Neue Suche nach: Daliento, S.
- Neue Suche nach: Sanseverino, A.
- Neue Suche nach: Spirito, P.
- Neue Suche nach: Zeni, L.
In:
IEEE transactions on power electronics
;
14
, 1
; 117-123
;
1999
-
ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Devices - Parametric Description of the Effect of Electron Irradiation on Recombination Lifetime in Silicon Layers: An Experimental Approach
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Beteiligte:
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Erschienen in:IEEE transactions on power electronics ; 14, 1 ; 117-123
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Verlag:
- Neue Suche nach: IEEE
-
Erscheinungsort:New York, NY
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Erscheinungsdatum:1999
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ISSN:
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ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Unbekannt
- Neue Suche nach: 53.35 / 53.35
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 770/5625
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Schlagwörter:
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Klassifikation:
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Datenquelle:
Inhaltsverzeichnis – Band 14, Ausgabe 1
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Table of contents| 1999
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