Atmospheric pressure chemical vapour deposition of chromium oxide films (Französisch)
- Neue Suche nach: Parkin, I.P.
- Neue Suche nach: Parkin, I.P.
- Neue Suche nach: Field, M.N.
In:
Journal de physique / 4
;
9
, 8
; Pr387
;
1999
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:Atmospheric pressure chemical vapour deposition of chromium oxide films
-
Beteiligte:Parkin, I.P. ( Autor:in ) / Field, M.N.
-
Erschienen in:Journal de physique / 4 ; 9, 8 ; Pr387
-
Verlag:
- Neue Suche nach: EDP Sciences
-
Erscheinungsort:Les Ulis
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Erscheinungsdatum:1999
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ISSN:
-
ZDBID:
-
Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Französisch
- Neue Suche nach: 31.00 / 33.00
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 250/3400
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Schlagwörter:
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Klassifikation:
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Datenquelle:
Inhaltsverzeichnis – Band 9, Ausgabe 8
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MOCVD - MOCVD of electroceramic oxides: A precursor manufacturer's perspectiveJones, A.C. et al. | 1999
- 561
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MOCVD - Single source MOCVD of superconducting films onto moved substratesStadel, O. et al. | 1999
- 569
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MOCVD - Deposition of Ta2O5 and (TiO2)-(Ta2O5) films from Ta(OEt)4(DMAE) and Ti(OEt)2(DMAE)2, by IMOCVDJiménez, C. et al. | 1999
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MOCVD - MOCVD of ferroelectric thin filmsSchmidt, C. et al. | 1999
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MOCVD - Er, Yb, and Er, Yb (CO-)doped yttria thin films, deposited by an aerosol assisted MO-CVD processMeffre, W. et al. | 1999
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MOCVD - OMVPE of GaN using (N3)2Ga((CH2)3N(CH3)2) (BAZIGA) in a cold wall reactorDevi, A. et al. | 1999
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MOCVD - MOCVD of Ni and Ni3C films from Ni(dmen)2(tfa)2Brissonneau, L. et al. | 1999
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MOCVD - Optimisation of the MOCVD of Ti(C, N) in a pulsed H2 - N2 plasma by gas-phase analysisDriessen', J.P.A.M. et al. | 1999
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MOCVD - Synthesis of pyrite (FeS2) thin films by low pressure metal-organic chemical vapor depositionMeester, B. et al. | 1999
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MOCVD - Phase relations in thin epitaxial films of complex oxides prepared by MOCVDSamoylenkov, S.V. et al. | 1999
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MOCVD - Epitaxial ferroelectric capacitors obtained by MOCVDNovozhilov, M.A. et al. | 1999
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MOCVD - Low-temperature MOCVD of molybdenum sulfide on silicon and 10OCr6 steel substratesSenocq, F. et al. | 1999
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MOCVD - MOCVD and properties of in situ doped Pt-SnO2 thin filmsAmjoud, M. et al. | 1999
- 651
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MOCVD - Chemical vapor deposition of tin oxide from SnEt4Bertrand, N. et al. | 1999
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MOCVD - Chemical composition effects in the thin films of the colossal magnetoresistive perovskite manganates grown by MOCVDGorbenko, O.Yu et al. | 1999
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MOCVD - MOCVD of SnO2 thin films from a new organometallic precursorBarreca, D. et al. | 1999
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MOCVD - Gas-phase FT-IR analysis and growth kinetics of Al2O3 in a LP-MOCVD reactor using new dialkylacetylacetonate precursorsBattiston, G.A. et al. | 1999
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MOCVD - YSZ-CeO2-YBCO heterostructures grown in-situ by pulsed injection CVDAbrutis, A. et al. | 1999
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MOCVD - Growth of oxide buffer layers and YBCO films on various substrates by pulsed injection CVDAbrutis, A. et al. | 1999
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Assisted Methods - CVD induced by ion beams for the preparation of oxide and nitride thin filmsGonzález-Elipe, A.R. et al. | 1999
- 709
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Assisted Methods - Volatile surfactant assisted MOCVD of oxide materialsMolodyk, A.A. et al. | 1999
- 717
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Assisted Methods - Plasma-enhanced chemical vapour deposition and structural characterization of amorphous chalcogenide filmsNagels, P. et al. | 1999
- 725
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Assisted Methods - Carbon nitride films prepared by inductively coupled plasma chemical vapour deposition from a solid carbon sourcePopov, C. et al. | 1999
- 733
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Assisted Methods - Deposition of nanoscale rhodium dots by STM assisted CVDMarchi, F. et al. | 1999
- 741
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Assisted Methods - Modeling of aerosol-assisted chemical vapor co-deposition of NiO and carbon nanotubesNarducci, D. et al. | 1999
- 749
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Assisted Methods - SnO2 thin films prepared by ion beam induced CVD. Preparation and characterizationJiménez, V.M. et al. | 1999
- 757
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Assisted Methods - Synthesis of polycrystalline silicon films on metalized ceramic substrates with laser-assisted chemical vapor depositionKorevaar, G. et al. | 1999
- 763
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Assisted Methods - In situ mass spetrometry during laser-induced chemical vapor deposition of silicon carbonitrideKorevaar, G. et al. | 1999
- 769
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Assisted Methods - RPECVD thin silicon carbonitride films using hexamethyldisilazaneFainer, N.I. et al. | 1999
- 777
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Assisted Methods - RPECVD thin cadmium, copper and zinc sulphide filmsRumyantsev, Yu M. et al. | 1999
- 785
-
Assisted Methods - Kinetics of laser-assisted single crystal growth of tungsten rodsLarsson, K. et al. | 1999
- 791
-
Assisted Methods - Photo-MOCVD of Cu thin films using Cu(hfa)(MHY) as precursorVidal, S. et al. | 1999
- 799
-
Assisted Methods - Remote plasma metalorganic chemical vapor deposition of GaN epilayersLosurdo, M. et al. | 1999
- 805
-
Assisted Methods - Study of sensing complex thin films prepared by PECVD method to H2SDai, G. et al. | 1999
- 811
-
Assisted Methods - Deposition of metastable Ti(1-x)AlxN folms by plasma-enhanced CVDPrange, R. et al. | 1999
- 819
-
Assisted Methods - RMPECVD of silica films in large scale microwave plasma reactor: Films propertiesNaudin, F. et al. | 1999
- 827
-
Assisted Methods - Deposition of tungsten by plasma enhanced chemical vapour depositionBain, M.F. et al. | 1999
- 837
-
CVD Technology - ALD precursor chemistry: Evolution and future challengesLaskelä, M. et al. | 1999
- 853
-
CVD Technology - Chemical vapor deposition of zinc gallate using a novel single precursorKim, C.G. et al. | 1999
- 861
-
CVD Technology - Synthesis and characterisation of b-ketoesterate complexes of yttrium, barium and copper(II): New precursors for liquid injection MOCVDGuillon, H. et al. | 1999
- 869
-
CVD Technology - Precision mass flow metering for CVD applicationsBoer, H.J. et al. | 1999
- 877
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CVD Technology - Unveiling the magic of H2S on the CVD-Al2O3 coatingOshika, T. et al. | 1999
- 885
-
CVD Technology - Boron doped polysilicon deposition in a sector reactor: Specific phenomena and propertiesScheid, E. et al. | 1999
- 893
-
CVD Technology - Initial stages of growth of LPCVD polysilicon films. Effects of the surface "ageing"Davazoglou, D. et al. | 1999
- 901
-
CVD Technology - New flash-evaporation feeder for chemical vapor depositionChuprakov, I.S. et al. | 1999
- 909
-
CVD Technology - Properties of multicomponent layers produced on high speed steel by combined nitriding and PACVD methods under glow discharge conditionsSobiecki, J.R. et al. | 1999
- 915
-
CVD Technology - LPCVD boron carbonitride films from triethylamine boraneKosinova, M.L. et al. | 1999
- 923
-
CVD Technology - Silver pivalate as a new volatile precursor for thin film depositionKuzmina, N. et al. | 1999
- 929
-
CVD Technology - New volatile heterocyclic metal diketonates for MOCVDDrozdov, A. et al. | 1999
- 935
-
CVD Technology - Comparison of tantalum precursors for use in liquid injection CVD of thin film oxides, dielectrics and ferroelectricsCrosbie, M.J. et al. | 1999
- 943
-
CVD Technology - Heterobimetallic single-source precursors for MOCVD, Synthesis and characterization of volatile mixed ligand complexes of lanthanides, barium and magnesium b-diketonates with d-element containing ligandsGleizes, A.N. et al. | 1999
- 953
-
CVD Technology - Niobium and tantalum derivatives with bidentate nitrogen ligands as potential precursors to nitridesHubert-Pfalzgraf, L.G. et al. | 1999
- 961
-
Process Control and Industrial Applications - In situ real time ellipsometry for GaN remote plasma MOCVD technologyBruno, G. et al. | 1999
- 977
-
Process Control and Industrial Applications - Continuous CVD processing of multi-filament fibre coatings for the manufacture of ceramic matrix compositesDias, A.G. et al. | 1999
- 987
-
Process Control and Industrial Applications - AlNi coatings on the internal surfaces of tubesLabatut, C. et al. | 1999
- 995
-
Process Control and Industrial Applications - FTIR based process control for industrial reactorsHopfe, V. et al. | 1999
- 1003
-
Process Control and Industrial Applications - Development of an in-situ thickness measurement technique for film growth by APCVDRivero, J.M. et al. | 1999
- 1013
-
Process Control and Industrial Applications - In-situ process monitoring of MOCVD of superconducting and dielectric oxide thin filmsYamamoto, S. et al. | 1999
- 1021
-
Process Control and Industrial Applications - In situ characterization of atomic layer deposition processes by a mass spectrometerRitala, M. et al. | 1999
- 1029
-
Process Control and Industrial Applications - Diamond nuclei formation in a microwave plasma assisted chemical vapor deposition (MWCVD) systemGarcia, M.M. et al. | 1999
- 1035
-
Process Control and Industrial Applications - GaIn-GaN heterostructures grown in production scale MOVPE reactorsSchoen, O. et al. | 1999
- 1041
-
Process Control and Industrial Applications - In-situ-spectroscopic monitoring for SIC-CVD process controlBrennfleck, K. et al. | 1999
- 1049
-
Process Control and Industrial Applications - CVD-produced ZrCO2-fiber coatings for mullite-mullite compositesNubian, K. et al. | 1999
- 1059
-
Characterization - XPS and XPS valence band characterizations of amorphous or polymeric silicon based thin films prepared by PACVD from organosilicon monomersBerjoan, R. et al. | 1999
- 1069
-
Characterization - Nucleation behavior during the first stages of SiC growth on different substratesHurtos, E. et al. | 1999
- 1075
-
Characterization - Optical properties of ultra-thin low pressure chemically vapor deposited silicon filmsDavazoglou, D. et al. | 1999
- 1083
-
Characterization - Phase and surface roughness evolution for as-deposited LPCVD silicon filmsCobianu, C. et al. | 1999
- 1091
-
Characterization - Structure of mixed-phase LPCVD silicon films as a function of operating conditionsMauduit, B.de et al. | 1999
- 1099
-
Characterization - Composition and magnetic properties of MOCVD processed thin films from nickeloceneCaro, D.de et al. | 1999
- 1107
-
Characterization - Correlations between stress and microstructure into LPCVD silicon filmsTemple-Boyer, P. et al. | 1999
- 1115
-
Characterization - LPCVD amorphous silicon carbide films, properties and microelectronics applicationsKleps, I. et al. | 1999
- 1123
-
Characterization - CVD of mono and double-layers on Si-B-N-C fibresNestler, K. et al. | 1999
- 1131
-
Characterization - Chemical and structural analysis of crystalline carbon nitride thin films prepared by electron cyclotron resonance plasma sputtering processTani, Y. et al. | 1999
- 1139
-
Characterization - XPS study of CVD silicon thin films deposited on various substrates from SiH4 gaseous precursorBerjoan, R. et al. | 1999
- 1147
-
Characterization - Hybrid plasma polymerized membranes from organosilicon precursors for gas separationRouaides, S. et al. | 1999
- 1155
-
Characterization - A new In0.5Ga0.5P-GaAs double heterojunction bipolar transistor (DHBT) prepared by MOCVDLiu, W.C. et al. | 1999
- 1163
-
Characterization - MOCVD grown d-doped InGaP-GaAs heterojunction bipolar transistorLiu, W.C. et al. | 1999
- 1171
-
Characterization - High breakdown n+-GaAs-d(p+)-GaInP-n-GaAs heterojunction camel-gate FET grown by LP-MOCVDLiu, W.C. et al. | 1999
- 1179
-
Characterization - Application of Rainan spectrometry for the characterization of complex oxide thin films Pr8-1035 grown by MOCVDGiittler, B. et al. | 1999
- 1187
-
Characterization - Mechanical reinforcement of carbon foam by hafnium carbide depositSourdiaucourt, P. et al. | 1999
- 1195
-
Characterization - Characterisation of complex multilayer structures using spectroscopic ellipsometryAlonso, M.I. et al. | 1999
- 1203
-
Index| 1999
-
LPCVD vertical furnace optimization for undoped polysilicon film depositionRinaldi, A.M. et al. | 1999
-
Kinetics of film growth in CVD reactionsRaic, K.T. et al. | 1999
-
In situ monitoring of atmospheric pressure tin oxide CVD using near-infrared diode laser spectroscopyHoldsworth, R.J. et al. | 1999
-
Amorphous SiGe deposition by LPCVD from Si2H6 and GeH4 precursorsOlivares, J. et al. | 1999
-
Laser CVD of silicon nanoclusters and in-situ process characterizationGoossens, A. et al. | 1999
-
A PE-MOCVD route to V2O5 nanostructured thin filmsBarreca, D. et al. | 1999
-
In-situ Raman spectroscopy and laser-induced fluorescence during laser chemical vapor precipitation of silicon nanoparticlesBesling, W.F.A. et al. | 1999
-
Chemistry and kinetics of chemical vapor deposition of pyrolytic carbon from methaneBecker, A. et al. | 1999
-
Study of the growth mechanism of CVD silicon films on silica by X-ray reflectivity, atomic force microscopy and scanning electron microscopyLee, A.van der et al. | 1999
-
Preparation and properties of cosmo-mimetic carbon micro-coils and ceramic micro-solenoids-micro-tubes by CVD processMotojima, S. et al. | 1999
-
Deposition and characterization of CVD - MoO3 thin filmsGesheva, K.A. et al. | 1999
-
Routes of metal oxide formation from metal b-diketonates used as CVD precursorsTurgambaeva, A.E. et al. | 1999
-
Deposition kinetics of Al2O3 from AlCl3-CO2-H2-HC1 gas mixtures by thermal CVD in a hot-wall reactorSchierling, M. et al. | 1999
-
CVD of metal chalcogenide filmsChuprakov, I.S. et al. | 1999
-
Kinetic mechanism of the decomposition of dimethyltin dichlorideMol, A.M.B.van et al. | 1999
-
H-termination effects on initial growth characteristics of W on Si using WF6 and SiH4 gasesYamamoto, Y. et al. | 1999
-
Thermodynamical and experimental conditions of hafnium carbide chemical vapour depositionSourdiaucourt, P. et al. | 1999
-
Hafnium carbide as a barrier in multilayer coatings by chemical vapor deposition (CVD)Wunder, V.K. et al. | 1999
-
Preparation of iron carbide and iron nanoparticles by laser-induced gas phase pyrolysisAlexandrescu, R. et al. | 1999
-
Epitaxial growth of TiO2 (rutile) thin films by halide CVDSchuisky, M. et al. | 1999
-
In-situ monitoring of atmospheric pressure tin oxide CVD using coherent anti-Stokes Raman scatteringDavis, M.J. et al. | 1999
-
Modeling of mass-transportation of tris-(acctylacetonato)chromium(III) at atmospheric pressureFedotova, N.E. et al. | 1999
-
Study of the growth mechanisms of low-pressure chemically vapour deposited silica filmsOjeda, F. et al. | 1999
-
Frontier trends in the prediction of vapour pressure of metal-organic precursorsIgumenov, I.K. et al. | 1999
-
MOCVD of superconducting oxides, heterostructures and superlatticesWeiss, F. et al. | 1999
-
Microstructure and deposition Characteristics of k-Al2O3Ruppi, S. et al. | 1999
-
Plasma polymer thin films obtained by plasma polymerization of pyrroleBorros, S. et al. | 1999
-
A statistical thermodynamic approach to model plasma reactorsCavallotti, C. et al. | 1999
-
Modelling of SiC sublimation growth process: Influence of experimental parameters on crystal shapePisch, A. et al. | 1999
-
The role of the substrate surface area-reactor volume ratio in chemistry and kinetics of chemical vapor depositionTeubner, M. et al. | 1999
-
Atomic layer doping of SiGeTillack, B. et al. | 1999
-
Low-pressure chemical vapour deposition of mullite coatings in a cold-wall reactorArmas, B. et al. | 1999
-
Synthesis and characterization of CN thin films by IR laser deposition in a flow reactorCrunteanu, A. et al. | 1999
-
Investigations on TiN, TiC and TI(CN) obtained by chemical vapor deposition EmigPopovska, N. et al. | 1999
-
The LPCVD of rutile at low temperaturesHitchman, M.L. et al. | 1999
-
MOCVD of ferroelectric BaMgF4 thin filmsRyazanov, M. et al. | 1999
-
Low pressure chemical vapour deposition of CNx. layers by interaction between tetramethylguanidine and cyanurchlorideZambov, L. et al. | 1999
-
Heats of formation and bond energies in group III compoundsAllendorf, M.D. et al. | 1999
-
Contribution to the modeling of CVD silicon carbide growthRaffy, C. et al. | 1999
-
Study of the precursor injection in a remote microwave PECVD reactorFoucher, L. et al. | 1999
-
Phase controlled low-pressure chemical vapor deposition of iron(di)sulfideMeester, B. et al. | 1999
-
Microstructure and properties of nanocomposite diamond films obtained by a new CVD-based techniqueTerranova, M.L. et al. | 1999
-
CVD of ZrO2 using 7rI4 as metal precursorForsgren, K. et al. | 1999
-
Site-specific chemistry of gallium arsenide metalorganic chemical vapor depositionFu, Q. et al. | 1999
-
Growth of high crystalline quality thin epitaxial CeO2 films on (1102) sapphireFröhlich, K. et al. | 1999
-
Modeling of silicon epitaxial growth with SiHCl3 in a CVD barrel reactor at atmospheric pressurePaola, E.de et al. | 1999
-
Growth mechanisms of MOCVD processed Ni thin filmsBrissonneau, L. et al. | 1999
-
CVD niobium in Nb-Hal-(H)-inert gas systems: A thermodynamic and experimental approachesGolubenko, A.N. et al. | 1999
-
Atmospheric pressure chemical vapour deposition of chromium oxide filmsParkin, I.P. et al. | 1999
-
The role of the pore surface area-pore volume ratio in chemical vapor infiltrationBenzinger, W. et al. | 1999
-
Deposition of ternary silicon based compounds by CVD techniquesMarti, F.J. et al. | 1999
-
Layer-by-layer growth of silicon nitride films by NH3 and SiH4Watanabe, T. et al. | 1999
-
A density functional theory study of surface and gas phase processes occurring during the MOCVD of ZnSCavallotti, C. et al. | 1999
-
In-situ mass spectrometric study of the reaction mechanism in MOCVD of Pyrite (FeS2)Reijnen, L. et al. | 1999
-
2D and 1D modeling of AMT barrel reactors for silicon depositionMasi, M. et al. | 1999
-
Structured YBa2CU3O7-8 thin films grown on aligned calcium stabilized zirconia-calcium zirconate lamellar eutectic substratesSantiso, J. et al. | 1999
-
Injection MOCVD of BaTiO3-SrTiO3 artificial superlatticesLindner, J. et al. | 1999
-
Modeling of SiOz deposition from mixtures of tetraethoxysilane and ozone in an APCVD industrial reactorNieto, J.-P. et al. | 1999
-
Process stability of SiGe heterostructures for BICMOS applicationsRibot, P. et al. | 1999
-
Chemical vapor deposition of semi-insulating polycrystalline silicon (SIPOS): Experience and simulationBarathie, P. et al. | 1999
-
Preservation of copper against atmospheric corrosion with a film obtained by plasma polymerization of methaneBorros, S. et al. | 1999
-
Atomic layer deposited thin films for corrosion protectionAromaa, J. et al. | 1999
-
Prediction of LPCVD silicon film microstructure from local operating conditions using numerical modelingDollet, A. et al. | 1999
-
Chemical mechanisms of tungsten CVDLakhotkin, Yu V. et al. | 1999
-
Modelling of nanosecond LCVD of 3D metal micropatternsReznikova, E.F. et al. | 1999
-
Atmospheric pressure chemical vapour deposition of tin sulfide thin filmsParkin, I.P. et al. | 1999
-
Some recent developments in chemical vapor deposition proress and equipment modelingKleijn, C.R. et al. | 1999
-
Theoretical analysis of a mass conservation equation for a surface reaction between two parallel plates of a chemical vapor deposition reactorMise, N. et al. | 1999