BRIEFS - Shallow Source-Drain Extension Effects on External Resistance in Sub-0.1 mm MOSFET's (Englisch)
- Neue Suche nach: Choi, C.-H.
- Neue Suche nach: Choi, C.-H.
- Neue Suche nach: Goo, J.-S.
- Neue Suche nach: Yu, Z.
- Neue Suche nach: Dutton, R.W.
In:
IEEE transactions on electron devices
;
47
, 3
; 655-658
;
2000
-
ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:BRIEFS - Shallow Source-Drain Extension Effects on External Resistance in Sub-0.1 mm MOSFET's
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Beteiligte:
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Erschienen in:IEEE transactions on electron devices ; 47, 3 ; 655-658
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsort:New York, NY
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Erscheinungsdatum:2000
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ISSN:
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ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 53.50 / 53.00 / 52.50 / 54.20
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 770/5670
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Datenquelle:
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