Effects of extended defects on the properties of intrinsic and extrinsic point defects in silicon (Englisch)
- Neue Suche nach: Justo, J.F.
- Neue Suche nach: Justo, J.F.
- Neue Suche nach: Antonelli, A.
- Neue Suche nach: Schmidt, T.M.
- Neue Suche nach: Fazzio, A.
In:
Physica / B
;
273
; 473-475
;
1999
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:Effects of extended defects on the properties of intrinsic and extrinsic point defects in silicon
-
Beteiligte:
-
Erschienen in:Physica / B ; 273 ; 473-475
-
Verlag:
- Neue Suche nach: North-Holland Physics Publ.
-
Erscheinungsort:Amsterdam
-
Erscheinungsdatum:1999
-
ISSN:
-
ZDBID:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Print
-
Sprache:Englisch
- Neue Suche nach: 51.00 / 51.00 / 33.60 / 33.60
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 535/3400
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Schlagwörter:
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Klassifikation:
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Datenquelle:
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- 1
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To 40 years of defects in semiconductors: may the problem never be solved!Stavola, M. et al. | 1999
- 7
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Self-interstitials in semiconductors: what we are learning from interstitial Zn in ZnSeWatkins, G.D. et al. | 1999
- 15
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Current problems in diamond: towards a quantitative understandingDavies, G. et al. | 1999
- 24
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The role of threading dislocations in the physical properties of GaN and its alloysSpeck, J.S. et al. | 1999
- 33
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Observation of Ga vacancies and negative ions in undoped and Mg-doped GaN bulk crystalsSaarinen, K. et al. | 1999
- 39
-
Mechanism of radiative recombination in acceptor-doped bulk GaN crystalsGodlewski, M. et al. | 1999
- 43
-
Mg acceptors in GaN: Dependence of the g-anisotropy on the doping concentrationHofmann, D.M. et al. | 1999
- 46
-
Electrical characterization of Mg-related energy levels and the compensation mechanism in GaN:MgSeghier, D. et al. | 1999
- 50
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Effect of Si doping on the strain and defect structure of GaN thin filmsRomano, L.T. et al. | 1999
- 54
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Photo-enhanced dissociation of hydrogen-magnesium complexes in gallium nitrideKamiura, Y. et al. | 1999
- 58
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Optically detected magnetic resonance of shallow donor - shallow acceptor and deep (2.8-3.2eV) recombination from Mg-doped GaNGlaser, E.R. et al. | 1999
- 63
-
The role of deep levels in the persistent photoconductivity in Mg-doped GaN grown by MOCVDSeghier, D. et al. | 1999
- 66
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High-resolution PL spectra of donor- and acceptor-bound excitons in homoepitaxial GaN-layersKornitzer, K. et al. | 1999
- 70
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Defect formation near GaN surfaces and interfacesBrillson, L.J. et al. | 1999
- 75
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Selective excitation of the yellow luminescence of GaNColton, J.S. et al. | 1999
- 80
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Transient photoluminescence of defects in undoped GaN prepared by metal organic vapor phase epitaxyKorotkov, R.Y. et al. | 1999
- 84
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Defect introduction in epitaxially grown n-GAN during electron beam deposition of Ru schottky contactsAuret, F.D. et al. | 1999
- 88
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- 92
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Metastable-like behaviour of a sputter deposition-induced electron trap in n-GaNAuret, F.D. et al. | 1999
- 96
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Annealing of ion-implanted GaNBurchard, A. et al. | 1999
- 101
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Behavior of electrically active point defects in irradiated MOCVD n-GaNEmtsev, V.V. et al. | 1999
- 105
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Deep acceptors in undoped GaNReshchikov, M.A. et al. | 1999
- 109
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Correlation of vibrational modes and DX-like centers in GaN:OWetzel, C. et al. | 1999
- 113
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Effects of oxygen incorporation in p-type AlN crystals doped with carbon speciesYamamoto, T. et al. | 1999
- 116
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Negatively charged muonium states in gallium nitrideLichti, R.L. et al. | 1999
- 120
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ODMR of bound excitons in Mg-doped GaNBayerl, M.W. et al. | 1999
- 124
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Ordering in bulk GaN:Mg samples: defects caused by Mg dopingLiliental-Weber, Z. et al. | 1999
- 130
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Structure of the {1120} inversion domain boundary in GaNNorthrup, J.E. et al. | 1999
- 134
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Electronically induced dislocation glide motion in hexagonal GaN single crystalsMaeda, K. et al. | 1999
- 140
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Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPEFarvacque, J.-L. et al. | 1999
- 144
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Identification of Ag and Cd photoluminescence in 111Ag-doped GaNStötzler, A. et al. | 1999
- 148
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Cathodoluminescence intensity and dislocation contrast evolutions under electron beam excitation in epitaxial GaN laterally overgrown on (0001) sapphireDassonneville, S. et al. | 1999
- 152
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Spectroscopic studies of H-decorated interstitials and vacancies in thin-film silicon exfoliationChabal, Y.J. et al. | 1999
- 164
-
The dipole moments of H2, HD and D2 molecules and their concentrations in siliconNewman, R.C. et al. | 1999
- 167
-
Deep levels of vacancy-hydrogen centers in silicon studied by Laplace DLTSBonde Nielsen, K. et al. | 1999
- 171
-
Hydrogen-induced extended complexes in siliconGorelkinskii, Y.V. et al. | 1999
- 176
-
Optically active hydrogen dimers in siliconHourahine, B. et al. | 1999
- 180
-
The A center binding a single hydrogen atom in crystalline silicon observed by EPRJohannesen, P. et al. | 1999
- 184
-
Effects of charge state on stress-induced alignment and relaxation of a hydrogen-carbon complex in siliconFukuda, K. et al. | 1999
- 188
-
A new type of hydrogen molecules in siliconMurakami, K. et al. | 1999
- 192
-
Temperature dependence of the formation of hydrogen molecules in n- and p-type siliconKitajima, M. et al. | 1999
- 196
-
Vibration of hydrogen molecules in semiconductors: anharmonicity and electron correlationSaito, M. et al. | 1999
- 200
-
Microscopic properties of H2 in Si from the dependence of the 3618.4cm-1 line on temperature and stressAnna Zhou, J. et al. | 1999
- 204
-
Hydrogen interactions with interstitial- and vacancy-type defects in siliconTokmoldin, S.Z. et al. | 1999
- 208
-
Vacancy-hydrogen complexes in group-IV semiconductorsBudde, M. et al. | 1999
- 212
-
Nucleation mechanism of hydrogen-induced platelets in single crystal and polycrystalline siliconNickel, N.H. et al. | 1999
- 216
-
Hydrogen interactions with intrinsic defects in siliconHastings, J.L. et al. | 1999
- 220
-
Optical absorption study of Zn-H complexes in SiMori, R. et al. | 1999
- 224
-
Thermal properties of H-related complexes in electron-irradiated Si doped with HSuezawa, M. et al. | 1999
- 228
-
Hydrogenation and passivation of electron-beam-induced defects in N-type SiOhmura, Y. et al. | 1999
- 231
-
Stability and vibrational modes of H2 and H2* complexes in SiKim, Y.-S. et al. | 1999
- 235
-
Hydrogen interaction with defects in electron-irradiated siliconFeklisova, O. et al. | 1999
- 239
-
Atomic and electronic structure of hydrogen-passivated double selenium donors in siliconHuy, P.T. et al. | 1999
- 243
-
Hydrogen reactions with electron irradiation damage in siliconPeaker, A.R. et al. | 1999
- 247
-
Optical absorption due to H-point defect complexes in quenched Si doped with CFukata, N. et al. | 1999
- 251
-
Breaking through the electrical saturation barrier: 2D- versus 3D-doping in n-type siliconCitrin, P.H. et al. | 1999
- 256
-
Infrared absorption study of a new dicarbon center in siliconLavrov, E.V. et al. | 1999
- 260
-
A unified microscopic mechanism for donor deactivation in SiBaierle, R. et al. | 1999
- 264
-
EPR proof of the negatively charged acceptor state Zn- in siliconGehlhoff, W. et al. | 1999
- 268
-
Theoretical studies of interstitial boron defects in siliconHakala, M. et al. | 1999
- 271
-
Defects incorporating Ge atoms in irradiated Si:GeSobolev, N.A. et al. | 1999
- 275
-
Local vibrational modes of a dicarbon-hydrogen center in crystalline siliconHoffmann, L. et al. | 1999
- 279
-
Identification of cadmium-related centers in siliconNäser, A. et al. | 1999
- 283
-
Annealing kinetics of the di-carbon radiation-damage centre in edge-defined film-fed growth siliconPark, S.-C. et al. | 1999
- 287
-
Electron irradiation of heavily doped silicon: group-III impurity ion pairsEmtsev, V.V. et al. | 1999
- 291
-
Vibrational absorption from vacancy-oxygen-related complexes (VO, V2O, VO2) in irradiated siliconLindström, J.L. et al. | 1999
- 296
-
Assignment of EPR spectrum for bistable thermal donors in siliconMakarenko, L.F. et al. | 1999
- 300
-
Local vibrational mode bands of V-O-H complexes in siliconMarkevich, V.P. et al. | 1999
- 305
-
Oxygen and peculiarities of its precipitation in Si1-xGexKhirunenko, L.I. et al. | 1999
- 308
-
Oxygen precipitation in nitrogen-doped Czochralski siliconYang, D. et al. | 1999
- 312
-
An infrared investigation of the 887 cm-1 band in Cz-SiFytros, L.G. et al. | 1999
- 317
-
Oxygen in silicon doped with isovalent impuritiesKhirunenko, L.I. et al. | 1999
- 322
-
The temperature dependence of radiative and nonradiative processes at Er-O centers in SiChen, T.D. et al. | 1999
- 326
-
Spectroscopic probing of defect-related energy storage in silicon doped with erbiumThao, D.T.X. et al. | 1999
- 330
-
On the generation of optically active Er centers in Si light emitting diodesJantsch, W. et al. | 1999
- 334
-
Effective Auger excitation of erbium luminescence by hot electrons in siliconBresler, M.S. et al. | 1999
- 338
-
The photoluminescence mechanism of erbium in silicon: intensity dependence on excitation power and temperatureThao, D.T.X. et al. | 1999
- 342
-
Er-O clustering and its influence on the lattice sites of Er in SiWahl, U. et al. | 1999
- 346
-
Impurity effects in silicon implanted with rare-earth ionsEmtsev, V.V. et al. | 1999
- 350
-
Structure of Er-related centers in SiCarey, J.D. et al. | 1999
- 354
-
Mechanism of excitation of erbium electroluminescence in amorphous siliconBresler, M.S. et al. | 1999
- 358
-
Transition metal defect behavior and Si density of states in the processing temperature regimeSmith, A.L. et al. | 1999
- 363
-
The electronic configuration of substitutional Fe in siliconWeyer, G. et al. | 1999
- 367
-
Lattice location of implanted Cu in SiWahl, U. et al. | 1999
- 371
-
Metal impurity precipitates in silicon: chemical state and stabilityMchugo, S.A. et al. | 1999
- 375
-
Evidence for deep recombination centers in high-purity silicon from photoluminescence measurements at elevated temperaturesAlex, V. et al. | 1999
- 379
-
Lithium-gold-related complexes in p-type crystalline siliconGudmundsson, J.T. et al. | 1999
- 383
-
Lattice defects in silicon rapidly solidified from the meltNishizawa, H. et al. | 1999
- 387
-
Copper-hydrogen complexes in siliconKnack, S. et al. | 1999
- 391
-
Dissociative diffusion of nickel in silicon, and sinks and sources of vacancy annihilation and generation in the crystal bulkKitagawa, H. et al. | 1999
- 395
-
Drift of interstitial iron in a space charge region of p-type Si Schottky diodeKoveshnikov, S. et al. | 1999
- 398
-
Impact of vacancies and self-interstitials on the formation of substitutional transition metal defects in float-zone silicon crystalsLemke, H. et al. | 1999
- 404
-
Dependence of electrically detected magnetic resonance signal shape from iron-contaminated silicon wafers on the thermal treatment of the samplesMchedlidze, T. et al. | 1999
- 408
-
Out-diffusion profiles of supersaturated substitutional gold in siliconMorooka, M. et al. | 1999
- 412
-
What do we know about iron in silicon after 45yr of researchIstratov, A.A. et al. | 1999
- 416
-
Iron-related defect model in n-type silicon based on the electrical and diffusion propertiesKitagawa, H. et al. | 1999
- 420
-
The 777meV photoluminescence band in Si:PtLeit~ao, J.P. et al. | 1999
- 424
-
Copper-related defects in siliconEstreicher, S.K. et al. | 1999
- 429
-
Depth profiles of palladium-hydrogen complexes in siliconWeber, J. et al. | 1999
- 433
-
Deep level anomalies in silicon doped with radioactive Au atomsBollmann, J. et al. | 1999
- 437
-
Formation of copper precipitates in siliconFlink, C. et al. | 1999
- 441
-
Experiments and computer simulations of iron profiles in p-p+ silicon: segregation and the position of the iron donor levelHieslmair, H. et al. | 1999
- 445
-
ESR study of Fe-H complexes in SiTakahashi, T. et al. | 1999
- 449
-
Pt and Li complexes in silicon. 99-07-22 16.52Kleverman, M. et al. | 1999
- 453
-
A combined experimental and theoretical approach to grain boundary structure and segregationPennycook, S.J. et al. | 1999
- 458
-
Native defects and their interactions in siliconColombo, L. et al. | 1999
- 463
-
The structure of vacancy-impurity complexes in highly n-type SiSaarinen, K. et al. | 1999
- 468
-
Defect states at silicon surfacesReddy, A.J. et al. | 1999
- 473
-
Effects of extended defects on the properties of intrinsic and extrinsic point defects in siliconJusto, J.F. et al. | 1999
- 476
-
Electron irradiation effects in Si observed at 4.2-25K by means of in situ transmission electron microscopyTakeda, S. et al. | 1999
- 480
-
Positron annihilation study of dopant effects on proton-irradiation defect in siliconHori, F. et al. | 1999
- 485
-
In-situ studies of point-defect complexes in silicon implanted with heavy MeV ionsYarykin, N. et al. | 1999
- 489
-
Impurity-assisted annealing of point defect complexes in ion- implanted siliconPellegrino, P. et al. | 1999
- 493
-
Concentration of point defects in growing CZ silicon crystal under the internal stresses: effects of impurity doping and thermal stressTanahashi, K. et al. | 1999
- 497
-
Annealing of the photoluminescence W-center in proton-irradiated siliconFeick, H. et al. | 1999
- 501
-
Magic number vacancy aggregates in Si and GaAs - structure and positron lifetime studiesStaab, T.E.M. et al. | 1999
- 505
-
Interstitial aggregates and a new model for the I1-W optical centre in siliconCoomer, B.J. et al. | 1999
- 509
-
Thermal equilibrium concentrations and diffusivities of intrinsic point defects in siliconOkino, T. et al. | 1999
- 512
-
Nonequilibrium experiments on self-diffusion in silicon at low temperatures using isotopically enriched structuresUral, A. et al. | 1999
- 516
-
Magic numbers of multivacancy in silicon and its hydrogen decorationAkiyama, T. et al. | 1999
- 520
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The divacancy in silicon and diamondCoomer, B.J. et al. | 1999
- 524
-
Tin-vacancy complexes in e-irradiated n-type siliconFanciulli, M. et al. | 1999
- 528
-
Effect of high-temperature electron irradiation on the formation of radiative defects in siliconBuyanova, I.A. et al. | 1999
- 532
-
Molecular-dynamics studies of self-interstitial aggregates in SiGharaibeh, M. et al. | 1999
- 535
-
On the fluence dependence of radiation-induced carrier removal in moderately doped SiAmekura, H. et al. | 1999
- 540
-
Investigation of defect formation and electronic transport in microcrystalline silicon deposited by hot-wire CVDStöger, M. et al. | 1999
- 544
-
Electronic transport properties of polycrystalline silicon films deposited on ceramic substratesBourdais, S. et al. | 1999
- 549
-
Defect diagnostics using scanning photoluminescence in multicrystalline siliconTarasov, I. et al. | 1999
- 553
-
Effects of nitrogen on dislocations in silicon during heat treatmentLi, D. et al. | 1999
- 557
-
Infrared vibrational mode absorption from thermal donors in germaniumClauws, P. et al. | 1999
- 561
-
Low-temperature spreading-resistance profiling for the characterization of impurity distributions in germaniumVoss, S. et al. | 1999
- 565
-
Frenkel pairs, vacancies, and self-interstitials in Ge: identification and properties from PAC- and Moessbauer spectroscopySielemann, R. et al. | 1999
- 570
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Local vibrational mode spectroscopy of thermal donors in germaniumMarkevich, V.P. et al. | 1999
- 575
-
Electronic and structural properties of vacancy and self-interstitial defects in germaniumJanotti, A. et al. | 1999
- 579
-
Investigation of ion-bombardment effects on the formation of voids during deposition of a-Ge:HPeng, Z.L. et al. | 1999
- 584
-
Deep defects in n-type high-purity germanium: quantification of optical variants of deep level transient spectroscopyBlondeel, A. et al. | 1999
- 589
-
Initial stages of Ge growth on Si(100): ad-atoms, ad-dimers, and ad-trimersDalpian, G.M. et al. | 1999
- 593
-
Atomic resolution EELS analysis of a misfit dislocation at a GeSi-Si interfaceBatson, P.E. et al. | 1999
- 598
-
Diffusion of gold in relaxed Si-Ge epi-layersFischer, R. et al. | 1999
- 603
-
Deep state defects in strained and relaxed epitaxial Si1-xGex on Si introduced by 3d transition metal and 5d noble metal impuritiesNauka, K. et al. | 1999
- 608
-
Images of local tilted regions in strain-relaxed SiGe layersMooney, P.M. et al. | 1999
- 612
-
Growth and dislocation behavior in GeSi bulk alloysYonenaga, I. et al. | 1999
- 616
-
Modelling of local modes in SixGe1-x and CxSiyGe1-x-y alloys to explore the local clustering of the speciesScarle, S. et al. | 1999
- 620
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Site preference next to germanium atom of gold and platinum impurities in SiGe alloyDobaczewski, L. et al. | 1999
- 624
-
Jahn-Teller splitting and Zeeman effect of acceptors in diamondKim, H. et al. | 1999
- 628
-
Electron paramagnetic resonance (EPR) and optical absorption studies of defects created in diamond by electron irradiation damage at 100 and 350KTwitchen, D.J. et al. | 1999
- 632
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Ab initio calculations of hyperfine interactions for vacancy and Ni point defects in diamondGerstmann, U. et al. | 1999
- 636
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An orthorhombic nickel-nitrogen complex in high-pressure synthetic diamondNeves, A.J. et al. | 1999
- 640
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Spin-orbit splitting of acceptor states in Si and CSerrano, J. et al. | 1999
- 644
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The production and annealing stages of the self-interstitial (R2) defect in diamondTwitchen, D.J. et al. | 1999
- 647
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Transition metals in diamond: experimental and theoretical identification of Co-N complexesJohnston, K. et al. | 1999
- 651
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New paramagnetic defects in synthetic diamonds grown using nickel catalystNeves, A.J. et al. | 1999
- 655
-
Electron-paramagnetic-resonance studies of defects in electron-irradiated p-type 4H and 6H SiCSon, N.T. et al. | 1999
- 659
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Effective mass donors in silicon carbide - a study with electron nuclear double resonanceGreulich-Weber, S. et al. | 1999
- 663
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Zeeman spectroscopy of the neutral silicon vacancy in 6H and 4H SiCWagner, M. et al. | 1999
- 667
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Electron paramagnetic resonance of the scandium acceptor in 4H and 6H silicon carbideSpaeth, J.-M. et al. | 1999
- 672
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Low-dose ion implanted epitaxial 4H-SiC investigated by deep level transient spectroscopy| 1999
- 677
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Zeeman spectroscopy of the D1 bound exciton in 3C-, and 4H-SiCEgilsson, T. et al. | 1999
- 681
-
Effect of grown-in biaxial strain on deep level defects in Si1-yCy-Si epitaxial heterostructuresSingh, D.V. et al. | 1999
- 685
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Self-diffusion on the arsenic sublattice in GaAs investigated by the broadening of buried nitrogen doping layersStolwijk, N.A. et al. | 1999
- 689
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Hydrogen passivation of AlxGa1-xAs-GaAs studied by surface photovoltage spectroscopyOlafsson, H.O. et al. | 1999
- 693
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Deep-level defects near the surface of Be-doped GaAs grown by molecular beam epitaxyKrispin, P. et al. | 1999
- 697
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Diffusivity of arsenic interstitials in GaAs studied by sulfur in-diffusionLeipner, H.S. et al. | 1999
- 701
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Effect of lithium diffusion on the native defects in GaAs studied by positron annihilation spectroscopyArpiainen, S. et al. | 1999
- 705
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Influence of stoichiometry and doping on vacancies in n-type GaAsGebauer, J. et al. | 1999
- 710
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Defect investigations in plastically deformed gallium arsenideLeipner, H.S. et al. | 1999
- 714
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Formation of vacancy clusters during copper diffusion in GaAsKrause-Rehberg, R. et al. | 1999
- 718
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Deep levels in He++ irradiated Be-doped Al0.5Ga0.5As MBE layersSzatkowski, J. et al. | 1999
- 722
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Native point defect analysis in non-stoichiometric GaAs: an annealing studyLutz, R.C. et al. | 1999
- 725
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As antisite incorporation in epitaxial growth of GaAsBourgoin, J.C. et al. | 1999
- 729
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Extrinsic and intrinsic defects at molecular-beam-epitaxy regrown GaAs interfacesKy, N.H. et al. | 1999
- 733
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Femtosecond nonlinear optics of low-temperature grown semiconductorsSiegner, U. et al. | 1999
- 737
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Tunnel ionization of deep impurities in semiconductors induced by terahertz electric fieldsGanichev, S.D. et al. | 1999
- 743
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Hydrogen molecules in GaAs after hydrogen plasma treatmentLeitch, A.W.R. et al. | 1999
- 746
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Photo-ionization spectra for alloy-induced configurations of Si-DX center in AlGaAsPiotrzkowski, R. et al. | 1999
- 750
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Photoluminescence of highly compensated GaAs doped with high concentration of GeWatanabe, M. et al. | 1999
- 754
-
Reactions of column-III vacancies and interstitials during Zn diffusion-induced disordering of GaAs-AlGaAs multiple-quantum-well structuresKy, N.H. et al. | 1999
- 759
-
Ab initio calculation of local vibrational modes. Application to GaAs:C and cubic GaN:AsGöbel, C. et al. | 1999
- 762
-
Dopant-related metastable defects in particle irradiated n-GaAsLegodi, M.J. et al. | 1999
- 766
-
Terahertz tunnel ionization of DX-centers in AlGaAs: TeKetterl, H. et al. | 1999
- 770
-
Luminescence properties of Er,O-codoped III-V semiconductors grown by organometallic vapor phase epitaxyFujiwara, Y. et al. | 1999
- 774
-
Direct observation of local structure of DX center by capacitance X-ray absorption fine structureIshii, M. et al. | 1999
- 778
-
Influence of oxygen co-doping on the thermal quenching property of Er-related emission in Al0.70Ga0.30As:ErUekusa, S. et al. | 1999
- 781
-
Optical ionization of DX center in AlGaAs:Se by inner-shell excitationYoshino, Y. et al. | 1999
- 784
-
Mechanism for dicarbon defect formation in AlAs and GaAsLatham, C.D. et al. | 1999
- 788
-
Vibrational excited-state transitions of substitutional carbon in gallium arsenideAlt, H.C. et al. | 1999
- 792
-
New type of persistent photoconductivity related to DX-center: the study of interband PPC in Si-doped AlGaAsPiotrzkowski, R. et al. | 1999
- 796
-
Comparison of electronic and mechanical contrast in scanning tunneling microscopy images of semiconductor heterojunctionsFeenstra, R.M. et al. | 1999
- 803
-
Complexes of group-VI donors with hydrogen in GaPClerjaud, B. et al. | 1999
- 807
-
Local-vibrational-mode absorption of interstitial oxygen in GaPUlrici, W. et al. | 1999
- 811
-
Optical and magnetic resonance studies of As-impurities in AlSb: from isoelectronic point defects to planesGlaser, E.R. et al. | 1999
- 815
-
Deep electronic states near the surface of (In,Ga)P layers grown by MOVPE on GaAsKrispin, P. et al. | 1999
- 819
-
Interplay between Jahn-Teller coupling and axial crystal fields: GaP:(Cr, S)Baars, E. et al. | 1999
- 823
-
Modeling the diffusion of Be in InGaAs-InGaAsP epitaxial heterostructures under non-equilibrium point defect conditionsKetata, K. et al. | 1999
- 827
-
Local vibrational modes associated with semi-insulating InP:C, frequencies and line shapesNewman, R.C. et al. | 1999
- 831
-
Intrinsic doping in InP: ab initio calculations of PIn antisitesSchmidt, T.M. et al. | 1999
- 835
-
Structural and electronic properties of doped InP-InGaAs short period superlattices grown by LP-MOVPEHenriques, A.B. et al. | 1999
- 839
-
Deep levels associated with alpha irradiation of n-type MOCVD InPZafar Iqbal, M. et al. | 1999
- 843
-
Defect complexes induced by diffusion of group I acceptors into CdTeWolf, H. et al. | 1999
- 848
-
Intra-shell transitions of 3D metal ions (Fe, Co, Ni) in II-VI wide-gap semiconductor alloysSurkova, T.P. et al. | 1999
- 852
-
NMR study of bistable defects under in situ illuminationShroyer, M. et al. | 1999
- 856
-
Shallow doping of wide band-gap II-VI compoundsReinhold, B. et al. | 1999
- 861
-
The electronic structure of interstitial zinc in its two Td sites in ZnSeChow, K.H. et al. | 1999
- 866
-
Ab initio study of local vibrational modes in II-VI semiconductors: ZnS:Se and ZnSe:NPetzke, K. et al. | 1999
- 870
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Luminescence and influence of defect concentration on excitons in 197Hg-197Au-doped CdTeHamann, J. et al. | 1999
- 875
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Lattice site and diffusion of ion-implanted Li in as-grown and Se-rich ZnSeBharuth-Ram, K. et al. | 1999
- 879
-
Persistent photoconductivity and DLTS in indium-doped Cd0.9Mn0.1TeSzatkowski, J. et al. | 1999
- 883
-
Photoluminescence of deep levels in (CdZn) Te-correlation with diffusion length measurementFranc, J. et al. | 1999
- 887
-
Study of microscopic mechanisms of electrical compensation of donors in CdS by fast diffusors (Cu, Ag, or Au)Desnica-Frankovic, I.D. et al. | 1999
- 891
-
Hydrogen passivation of nitrogen-related energy levels in ZnSe and ZnSSe grown by MBESeghier, D. et al. | 1999
- 895
-
Anisotropic polarization of dislocation-related luminescence in thin ZnSe filmsWorschech, L. et al. | 1999
- 898
-
Induced defects in ZnS by electron and proton irradiation and defect-annealing behaviorBrunner, S. et al. | 1999
- 902
-
The deactivation of nitrogen acceptors in ZnSxSe1-x and MgyZn1-ySxSe1-x studied by combining positron annihilation, SIMS, and CV measurementsOila, J. et al. | 1999
- 907
-
Compensating defects and electrical activation of donors in CdSDesnica, U.V. et al. | 1999
- 911
-
Spin-flip Raman scattering in submonolayer CdSe-ZnSe structuresRuf, T. et al. | 1999
- 915
-
Evidence on a bond-breaking relaxation in the bistable centers In and Ga in CdF2Nissilä, J. et al. | 1999
- 919
-
Analysis of secondary phases in InSbBi thin filmsWagener, M.C. et al. | 1999
- 923
-
Determination of deep and shallow levels in conjugated polymers by electrical methodsStallinga, P. et al. | 1999
- 927
-
Differences in the electronic structure and compensation mechanism between n-type Zn- and Cd-doped CuInS2 crystalsYamamoto, T. et al. | 1999
- 930
-
Defects in CuIn(Ga)Se2 solar cell material characterized by positron annihilation: post-growth annealing effectsBörner, F. et al. | 1999
- 934
-
Do structural defects affect semiconducting properties of fullerene thin films?Katz, E.A. et al. | 1999
- 938
-
Confinement effects on phosphorus donors embedded in silicon nanocrystalsPawlak, B.J. et al. | 1999
- 944
-
Determination of potential fluctuations in modulation-doped SiGe-quantum wells from conduction electron spin resonanceJantsch, W. et al. | 1999
- 947
-
Phonon resonances in optical spectra of donors in quantum wellsBednarek, S. et al. | 1999
- 951
-
Boron in mesoporous Si - Where have all the carriers gone?Polisski, G. et al. | 1999
- 955
-
OH-related emitting centers in interface layer of porous siliconTorchynska, T.V. et al. | 1999
- 959
-
Hole and electron traps in the InGaAs-GaAs heterostructures with quantum dotsSobolev, M.M. et al. | 1999
- 963
-
Defect-limited carrier diffusion in In0.53Ga0.47As-InP single quantum wellMonte, A.F.G. et al. | 1999
- 967
-
Optical and magnetic properties for erbium-related centres in self-assembly silicon nanostructuresBagraev, N.T. et al. | 1999
- 971
-
Non-exponential capture of electrons in GaAs with embedded InAs quantum dotsWalther, C. et al. | 1999
- 976
-
Overcoming doping bottlenecks in semiconductors and wide-gap materialsZhang, S.B. et al. | 1999
- 981
-
Diffusion in isotopically controlled semiconductor systemsBracht, H. et al. | 1999
- 987
-
Calculation of the line shapes of electronic transitions at defects using the frozen Gaussian techniqueMckinnon, B. et al. | 1999
- 991
-
First-principles dynamics of defect reactions triggered by electronic excitationMiyamoto, Y. et al. | 1999
- 995
-
Numerical determination of one-dimensional energy bands bound to dislocationsFarvacque, J.L. et al. | 1999
- 999
-
Transient lattice vibration induced by coherent carrier captures at a deep-level defect and the effect on defect reactionsShinozuka, Y. et al. | 1999
- 1003
-
Real-space electronic structure calculations of charged clusters and defects in semiconductors using a multigrid methodJin, Y.-G. et al. | 1999
- 1007
-
Magnetic field effect on tunnel ionization of deep impurities by far-infrared radiationMoskalenko, A.S. et al. | 1999
- 1011
-
Study of bound exciton excited state structure using photothermal ionisation spectroscopyGibson, M. et al. | 1999
- 1015
-
Electron spin resonance study of the interaction of hydrogen with the (111)Si-SiO2 interface: Pb-hydrogen interaction kineticsStesmans, A. et al. | 1999
- 1022
-
Aspects of defects in silica related to dielectric breakdown of gate oxides in MOSFETsBlöchl, P.E. et al. | 1999
- 1027
-
Capacitively detected magnetic resonance of defects in MOSFETsBrandt, M.S. et al. | 1999
- 1031
-
Radiation-induced lattice defects in InGaAsP laser diodes and their effects on device performanceOhyama, H. et al. | 1999
- 1034
-
Impact of induced lattice defects on performance degradation of AlGaAs-GaAs p-HEMTsHakata, T. et al. | 1999
- 1037
-
Mechanism of injection-enhanced defect transformation in LPE GaAs structuresTorchynska, T.V. et al. | 1999
- 1041
-
The bulk damaged effects of clustered defects in irradiated silicon detectorsSaramad, S. et al. | 1999
- 1045
-
Defect-engineering rad-hard particle detectors: the role of impurities and inter-defect charge exchangeMacevoy, B.C. et al. | 1999
- 1050
-
Point defect reaction in (Al)GaInP STQW lasers enhanced by laser operationIhara, A. et al. | 1999