BRIEFS - Limitations of the Modified Shift-and-Ratio Technique for Extraction of the Bias Dependence of Lcff and of Rsd of LDD MOSFET's (Englisch)
- Neue Suche nach: Ahmed, K.
- Neue Suche nach: Ahmed, K.
- Neue Suche nach: De, I.
- Neue Suche nach: Osburn, C.
- Neue Suche nach: Wortman, J.
- Neue Suche nach: Hauser, J.
In:
IEEE transactions on electron devices
;
47
, 4
; 891-892
;
2000
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:BRIEFS - Limitations of the Modified Shift-and-Ratio Technique for Extraction of the Bias Dependence of Lcff and of Rsd of LDD MOSFET's
-
Beteiligte:
-
Erschienen in:IEEE transactions on electron devices ; 47, 4 ; 891-892
-
Verlag:
- Neue Suche nach: IEEE
-
Erscheinungsort:New York, NY
-
Erscheinungsdatum:2000
-
ISSN:
-
ZDBID:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Print
-
Sprache:Englisch
- Neue Suche nach: 53.50 / 53.00 / 52.50 / 54.20
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 770/5670
-
Schlagwörter:
-
Klassifikation:
-
Datenquelle:
Inhaltsverzeichnis – Band 47, Ausgabe 4
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 661
-
EDITORIAL - Changes in the Editorial BoardJindal, R.P. et al. | 2000
- 662
-
PAPERS - Compound Semiconductor Devices - Base Transit Time in Abrupt GaN-InGaN-GaN HBT'sChiu, S.-Y. et al. | 2000
- 667
-
PAPERS - Compound Semiconductor Devices - A Simple Yet Comprehensive Unified Physical Model of the Donor Layer Electrons in Delta-Doped and Uniformly Doped HEMT'sKarmalkar, S. et al. | 2000
- 677
-
PAPERS - Compound Semiconductor Devices - Relation Between Low-Frequency Noise and Long-Term Reliability of Single AlGaAs-GaAs Power HBT'sMohammadi, S. et al. | 2000
- 677
-
Relation between low-frequency noise and long-term reliability of single AlGaAs/GaAs power HBTsMohammadi, S. / Pavlidis, D. / Bayraktaroglu, B. et al. | 2000
- 687
-
PAPERS - Compound Semiconductor Devices - High Temperature Performance of NMOS Integrated Inverters and Ring Oscillators in 6H-SiCSchmid, U. et al. | 2000
- 692
-
PAPERS - Compound Semiconductor Devices - High Voltage GaN Schottky RectifiersDang, G.T. et al. | 2000
- 697
-
PAPERS - Sensors and Actuators - Tunnel Magnetoresistance Devices Processed by Oxidation in Air and UV Assisted Oxidation in OxygenGirgis, E. et al. | 2000
- 702
-
PAPERS - Sensors and Actuators - A High-Speed Capacitive Humidity Sensor with On-Chip Thermal ResetKang, U. et al. | 2000
- 711
-
PAPERS - Silicon Devices - Double Sided Minority Carrier Collection in Silicon Solar CellsKerschaver, E.Van et al. | 2000
- 718
-
Explaining the dependences of the hole and electron mobilities in Si inversion layersPirovano, A. / Lacaita, A.L. / Zandler, G. / Oberhuber, R. et al. | 2000
- 718
-
PAPERS - Silicon Devices - Explaining the Dependences of the Hole and Electron Mobilities in Si Inversion LayersPirovano, A. et al. | 2000
- 725
-
PAPERS - Silicon Devices - A Closed-Form Back-Gate-Bias Related Inverse Narrow-Channel Effect Model for Deep-Submicron VLSI CMOS Devices Using Shallow Trench IsolationLin, S.-C. et al. | 2000
- 734
-
PAPERS - Silicon Devices - A Four-Step Method for De-Embedding Gigahertz On-Wafer CMOS MeasurementsKolding, T.E. et al. | 2000
- 741
-
PAPERS - Silicon Devices - Dielectric Breakdown Mechanism of Thin-SiO2 Studied by the Post-Breakdown Resistance StatisticsSatake, H. et al. | 2000
- 741
-
Dielectric breakdown mechanism of thin-SiO2 studied by the post-breakdown resistance statisticsSatake, H. / Toriumi, A. et al. | 2000
- 746
-
Effect of physical stress on the degradation of thin SiO2 films under electrical stressYang, T.C. / Saraswat, K.C. et al. | 2000
- 746
-
PAPERS - Silicon Devices - Effect of Physical Stress on the Degredation of Thin SiO2 Films Under Electrical StressYang, T.-C. et al. | 2000
- 756
-
PAPERS - Silicon Devices - New Channel Engineering for Sub-100 nm MOS Devices Considering Both Carrier Velocity Overshoot and Statistical Performance FluctuationsMizuno, T. et al. | 2000
- 762
-
PAPERS - Silicon Devices - Characterization of Shallow Silicided Junctions for Sub-Quarter Micron ULSJ Technology -- Extraction of Silicidation Induced Schottky Contact AreaLee, H.-D. et al. | 2000
- 762
-
Characterization of shallow silicided junctions for sub-quarter micron ULSI technology. Extraction of silicidation induced Schottky contact areaLee, Hi-Deok et al. | 2000
- 768
-
PAPERS - Silicon Devices - A Physical Thermal Noise Model for SOI MOSFETJin, W. et al. | 2000
- 774
-
PAPERS - Silicon Devices - Theoretical Study of Deep-Trap-Assisted Anomalous Currents in Worst-Bit Cells of Dynamic Random-Access MemoriesYamaguchi, K. et al. | 2000
- 781
-
PAPERS - Silicon Devices - FRAM Cell Design with High Immunity to Fatigue and Imprint for 0.5 mm 3 V ITIC 1 Mbit FRAMTanaka, S. et al. | 2000
- 789
-
PAPERS - Silicon Devices - Device Scaling Effects on Hot-Carrier Induced Interface and Oxide-Trapped Charge Distributions in MOSFET'sMahapatra, S. et al. | 2000
- 797
-
PAPERS - Silicon Devices - An Electrical Method for Measuring the Difference in Bandgap across the Neutral Base in SiGe HBT'sTang, Y.T. et al. | 2000
- 805
-
Polysilicon gate enhancement of the random dopant induced threshold voltage fluctuations in sub-100 nm MOSFETs with ultrathin gate oxideAsenov, A. / Saini, S. et al. | 2000
- 805
-
PAPERS - Silicon Devices - Polysilicon Gate Enhancement of the Random Dopant Induced Threshold Voltage Fluctuations in Sub-100 nm MOSFET's with Ultrathin Gate OxideAsenov, A. et al. | 2000
- 813
-
PAPERS - Silicon Devices - Design Optimization of High-Performance Low-Temperature 0.18 mm MOSFET's with Low-Impurity-Density Channels at Supply Voltage Below 1 VXu, J. et al. | 2000
- 822
-
PAPERS - Silicon Devices - Isolation Edge Effect Depending on Gate Length of MOSFET's with Various Isolation StructuresOishi, T. et al. | 2000
- 828
-
PAPERS - Silicon Devices - Trading-Off Programming Speed and Current Absorption in Flash Memories with the Ramped-Gate Programming TechniqueEsseni, D. et al. | 2000
- 835
-
PAPERS - Silicon Devices - Gate Length Scalability of n-MOSFET's Down to 30 nm: Comparison Between LDD and Non-LDD StructuresMurakami, E. et al. | 2000
- 841
-
PAPERS - Silicon Devices - New Self-Adjusted Dynamic Source Multilevel P-Channel Flash MemoryLin, R.-L. et al. | 2000
- 848
-
PAPERS - Silicon Devices - High-Performance Deep Submicron CMOS Technologies with Polycrystalline-SiGe GatesPonomarev, Y.V. et al. | 2000
- 856
-
PAPERS - Silicon Devices - Transistor Characteristics of 14-nm-Gate-Length EJ-MOSFET'sKawaura, H. et al. | 2000
- 861
-
PAPERS - Silicon Devices - A New Substrate Current Model for Submicron MOSFET'sKolhatkar, J.S. et al. | 2000
- 861
-
A new substrate current model for submicron MOSFETsKolhatkar, J.S. / Dutta, A.K. et al. | 2000
- 864
-
RF potential of a 0.18- mu m CMOS logic device technologyBurghartz, J.N. / Hargrove, M. / Webster, C.S. / Groves, R.A. / Keene, M. / Jenkins, K.A. / Logan, R. / Nowak, E. et al. | 2000
- 864
-
PAPERS - Silicon Devices - RF Potential of a 0.18-mm CMOS Logic Device TechnologyBurghartz, J.N. et al. | 2000
- 871
-
PAPERS - Solid-State Device Phenomena - Universal Impurity Ionization Parameters in MIS C-V Freeze-Out Characteristics and Direct Extraction of Surface Doping ConcentrationBouillon, P. et al. | 2000
- 878
-
PAPERS - Solid-State Device Phenomena - Surface Geometric Effects on Tunneling RatesEncinosa, M. et al. | 2000
- 883
-
PAPERS - Solid-State Device Phenomena - Temperature Dependent Minority Electron Mobilities in Strained Si1-xGex (0.2 <= x <= 0.4) LayersRieh, J.-S. et al. | 2000
- 891
-
BRIEFS - Limitations of the Modified Shift-and-Ratio Technique for Extraction of the Bias Dependence of Lcff and of Rsd of LDD MOSFET'sAhmed, K. et al. | 2000
- 893
-
BRIEFS - A Three Terminal Varactor for RF IC's in Standard CMOS TechnologySvelto, F. et al. | 2000
- 895
-
BRIEFS - Novel AlInAsSb-InGaAs Heterostructure for Double-Barrier Resonant Tunneling DiodeSu, Y.-K. et al. | 2000
- 897
-
BRIEFS - Theory of the Single Contact Electron Beam Induced Current EffectOng, V.K.S. et al. | 2000
- 900
-
Comments on "A numerical analysis of the storage times of dynamic random-access memory cells incorporating ultrathin dielectrics"Yun Seop Yu, / Sung Woo Hwang, / Du-Heon Song, / Kyeong Ho Lee, et al. | 2000
- 900
-
CORRESPONDENCE - Comments on "A Numerical Analysis of the Storage Times of Dynamic Random-Access Memory Cells Incorporating Ultrathin Dielectrics"Yu, Y.S. et al. | 2000
- 902
-
ANNOUNCEMENTS - Call for Papers -- IEEE TRANSACTIONS ON ELECTRON DEVICES Special Issue on Vacuum Electronics| 2000
- 903
-
ANNOUNCEMENTS - Call for Papers -- International Semiconductor Conference, October 2000| 2000
- 904
-
ANNOUNCEMENTS - 12th International Conference on Indium Phosphide and Related Materials, May 2000| 2000