PAPERS - Reliability - Comparative Physical and Electrical Metrology of Ultrathin Oxides in the 6 to 1.5 nm Regime (Englisch)
- Neue Suche nach: Ahmed, K.
- Neue Suche nach: Ahmed, K.
- Neue Suche nach: Ibok, E.
- Neue Suche nach: Bains, G.
- Neue Suche nach: Chi, D.
- Neue Suche nach: Ogle, B.
- Neue Suche nach: Wortman, J.J.
- Neue Suche nach: Hauser, J.R.
In:
IEEE transactions on electron devices
;
47
, 7
; 1349-1354
;
2000
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:PAPERS - Reliability - Comparative Physical and Electrical Metrology of Ultrathin Oxides in the 6 to 1.5 nm Regime
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Beteiligte:
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Erschienen in:IEEE transactions on electron devices ; 47, 7 ; 1349-1354
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsort:New York, NY
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Erscheinungsdatum:2000
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ISSN:
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ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 53.50 / 53.00 / 52.50 / 54.20
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 770/5670
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Schlagwörter:
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Klassifikation:
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Datenquelle:
Inhaltsverzeichnis – Band 47, Ausgabe 7
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PAPERS - Reliability - Comparative Physical and Electrical Metrology of Ultrathin Oxides in the 6 to 1.5 nm RegimeAhmed, K. et al. | 2000
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ANNOUNCEMENTS - 2000 IEEE GaAs IC Symposium| 2000
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