Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Cubic GaN Films on GaAs (001) Substrates without Deep-Level Luminescence Grown by Metalorganic Vapor Phase Epitaxy (Englisch)
- Neue Suche nach: Onabe, K.
- Neue Suche nach: Onabe, K.
- Neue Suche nach: Wu, J.
- Neue Suche nach: Katayama, R.
- Neue Suche nach: Zhao, F.H.
- Neue Suche nach: Nagayama, A.
- Neue Suche nach: Shiraki, Y.
In:
Physica status solidi / A
;
180
, 1
; 15-20
;
2000
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Cubic GaN Films on GaAs (001) Substrates without Deep-Level Luminescence Grown by Metalorganic Vapor Phase Epitaxy
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Beteiligte:
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Erschienen in:Physica status solidi / A ; 180, 1 ; 15-20
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Verlag:
- Neue Suche nach: Wiley-VCH
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Erscheinungsort:Berlin
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Erscheinungsdatum:2000
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ISSN:
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ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 51.00 / 51.00 / 33.60 / 33.60
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 530.41
- Weitere Informationen zu Dewey Decimal Classification
- Neue Suche nach: 030/3475
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Schlagwörter:
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Klassifikation:
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Datenquelle:
Inhaltsverzeichnis – Band 180, Ausgabe 1
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Preface| 2000
- 5
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - GaN-Based LEDs and Lasers on SiCHärle, V. et al. | 2000
- 15
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Cubic GaN Films on GaAs (001) Substrates without Deep-Level Luminescence Grown by Metalorganic Vapor Phase EpitaxyOnabe, K. et al. | 2000
- 21
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - High-Power Operation of ZnSe-Based cw-Laser DiodesKlude, M. et al. | 2000
- 27
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Radiative Recombination Dynamics of Carriers in InxGa1-xN Epitaxial Layers Revealed by Temperature Dependence of Time-Resolved Photoluminescence SpectraKudo, H. et al. | 2000
- 33
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - A Blue Resonant Cavity Light Emitting DiodeSong, Y.-K. et al. | 2000
- 37
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Novel II-VI Light Emitting Diodes Fabricated on InP Substrates Applying Wide-Gap and Highly p-Dopable BeZnTe for p-Cladding LayersTakada, T. et al. | 2000
- 45
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Control of Initial Nucleation by Reducing the V-III Ratio during the Early Stages of GaN GrowthYang, T. et al. | 2000
- 51
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - GaN Bulk Substrates for GaN Based LEDs and LDsOda, O. et al. | 2000
- 59
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - The Effects of Atomic Hydrogen on Indium Incorporation and Ordering in InGaN Grown by RF-MBEOkamoto, Y. et al. | 2000
- 65
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Suppression of Inversion Domains and Decrease of Threading Dislocations in Migration Enhanced Epitaxial GaN by RF-Molecular Beam EpitaxySugihara, D. et al. | 2000
- 73
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Morphology of GaN Surfaces and GaN-(Al,Ga)N Interfaces Grown on 6H-SiC(0001) by Reactive Molecular Beam EpitaxyThamm, A. et al. | 2000
- 81
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Effect of Pits in InGaN-GaN Multi-Quantum Wells on the Strain and In SegregationYang, Z.J. et al. | 2000
- 85
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Multiple Peak Spectra from InGaN-GaN Multiple Quantum WellsPozina, G. et al. | 2000
- 91
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Lasing in Vertical Direction in Structures with InGaN Quantum DotsKrestnikov, I.L. et al. | 2000
- 97
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Study of the Effects of Mg and Be Co-Doping in GaN LayersNaranjo, F.B. et al. | 2000
- 103
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Low Resistance and Thermally Stable Pt-Ru Ohmic Contacts to p-Type GaNJang, Ja-Soon et al. | 2000
- 109
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - MOVPE Growth Optimization Using Computer Supported Design of Experiments (DoE)Alam, A. et al. | 2000
- 115
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Thermodynamic Analysis of the MOVPE Growth of InAlNKoukitu, A. et al. | 2000
- 121
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Light Emitting Diode with Charge Asymmetric Resonance TunnelingRebane, Y.T. et al. | 2000
- 127
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Scale Effects on Exciton Localization and Nonradiative Processes in GaN-AlGaN Quantum WellsGallart, M. et al. | 2000
- 133
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Growth of M-Plane GaN(1100): A Way to Evade Electrical Polarization in NitridesWaltereit, P. et al. | 2000
- 139
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - CW Operation of InGaN MQW Laser DiodesBour, D.P. et al. | 2000
- 149
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Stimulated Emission, Electro- and Photoluminescence of InGaN-GaN EL-Test and SQW Heterostructures Grown by MOVPEYablonskii, G.P. et al. | 2000
- 157
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - 230 to 250 nm Intense Emission from AlN-AlGaN Quantum WellsHirayama, H. et al. | 2000
- 163
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - CW Operation of (In,Ga)N MQW Laser Diodes on FIELO-GaN SubstratesMizuta, M. et al. | 2000
- 171
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Behavior of Threading Dislocations in SAG-GaN Grown by MOVPEHoribuchi, K. et al. | 2000
- 177
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - First European GaN-Based Violet Laser DiodeBader, S. et al. | 2000
- 183
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Growth of Bulk-ZnS by Solid Phase RecrystallizationYoneta, M. et al. | 2000
- 189
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Thermally Induced Strain in ZnSe and GaN Epitaxial Layers Studied by High-Resolution X-Ray Diffraction at Variable TemperaturesHeinke, H. et al. | 2000
- 195
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Magneto-Optical Characterization of the Nitrogen-Related Impurities in p-Type ZnSe EpilayersGravier, L. et al. | 2000
- 201
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Nonradiative Carrier Recombination Centers of Cl-Doped ZnSe Epitaxial LayersYoshino, K. et al. | 2000
- 207
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Temperature-Dependent Photoluminescence Study on CdZnS-ZnS-MgZnS Separate-Confinement HeterostructuresYoshimura, K. et al. | 2000
- 213
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Optimised Implantation-Induced Disordering for Lowering the Threshold Current Density of II-VI Laser DiodesSchulz, O. et al. | 2000
- 217
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Blue-Green Light Emitting Diodes with New p-Contact Layers: ZnSe-BeTeCho, M.W. et al. | 2000
- 225
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - ZnSe-BeTe Type-II Light Emitting DiodesReuscher, G. et al. | 2000
- 231
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Room-Temperature Photoluminescence from BAlGaN-Based Double or Single Heterostructures for UV Laser DiodeTakano, T. et al. | 2000
- 235
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - High Quality Epitaxial Growth of Hexagonal GaN on Al2O3(0001) and Cubic GaN on GaAs(100) by Molecular Beam EpitaxyKimura, R. et al. | 2000
- 241
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Cubic InGaN-GaN Double-Heterostructure Light Emitting Diodes Grown on GaAs (001) Substrates by MOVPETaniyasu, Y. et al. | 2000
- 247
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Lateral Epitaxial Overgrowth of GaN and Its Crystallographic Tilt Depending on the Growth ConditionSong, Y.H. et al. | 2000
- 251
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Ammonia Cluster Beam for Group-III Nitride SynthesisSaito, H. et al. | 2000
- 257
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Hydride Vapour Phase Epitaxy Growth of GaN Layers under Reduced Reactor PressureChung, H.Y.A. et al. | 2000
- 261
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - The Red (1.8 eV) Luminescence in Epitaxially Grown GaNHofmann, D.M. et al. | 2000
- 267
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Development of Pure Green LEDs Based on ZnTeSato, K. et al. | 2000
- 275
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - BeCdSe-(Be,Zn)Se Quantum Well as a New Active Region for Blue-Green II-VI Lasers and Light-Emitting DiodesIvanov, S.V. et al. | 2000
- 281
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Resonant Gain in ZnSe Structures with Stacked CdSe Islands Grown in Stranski-Krastanov ModeStrassburg, M. et al. | 2000
- 287
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Improvement of Electrical Properties in ZnO Thin Films Grown by Radical Source(RS)-MBEIwata, K. et al. | 2000
- 293
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - (Al,Ga)N Ultraviolet Photodetectors and ApplicationsMuñoz, E. et al. | 2000
- 301
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - ZnSe- and ZnMgBeSe-Based Schottky Barrier Photodetectors for the Blue and Ultraviolet Spectral RangeVigué, F. et al. | 2000
- 307
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - III-Nitride Unipolar Light Emitting DevicesShreter, Y.G. et al. | 2000
- 315
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Investigations on Structural Properties of GaInN-GaN Multi Quantum Well StructuresScholz, F. et al. | 2000
- 321
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Effective Localization of Quantum Well Excitons in InGaN Quantum Well Structures with High InN Mole FractionChichibu, S.F. et al. | 2000
- 327
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Comparison of the Mechanism of Optical Amplification in InGaN-GaN Heterostructures Grown by Molecular Beam Epitaxy and MOCVDHolst, J. et al. | 2000
- 333
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Si Based Green ELD: Si-Oxygen SuperlatticeTsu, R. et al. | 2000
- 339
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Photoluminescence of GaN Quantum Wells with AlGaN Barriers of High Aluminium ContentHarris, J.C. et al. | 2000
- 345
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Cross-Sectional Scanning Tunneling Microscopy Characterization of Cubic GaN Epilayers Grown on (001) GaAsKazama, T. et al. | 2000
- 351
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - A Study of Sulphur Diffusion in ZnMgSSe-ZnSe Quantum Wells by Energy-Loss Imaging in a Transmission Electron MicroscopeWalther, T. et al. | 2000
- 357
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Characteristics of the GaN Polar Surface during an Etching Process in KOH SolutionLi, Dongsheng et al. | 2000
- 363
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Improved Radiative Efficiency Using Self-Formed GaInN-GaN Quantum Dots Grown by Molecular Beam EpitaxyDamilano, B. et al. | 2000
- 369
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Growth and Characterization of a Cubic GaN p-n Light Emitting Diode on GaAs (001) SubstratesAs, D.J. et al. | 2000
- 375
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Time-Resolved Spectroscopy of MBE-Grown InGaN-GaN Self-Formed Quantum DotsMorel, A. et al. | 2000
- 381
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Temperature Dependence of the Photoreflectance Lineshape for GaN Films Grown by Molecular Beam EpitaxyBehn, U. et al. | 2000
- 387
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Optically Pumped Quasi-Continuous Wave Violet Vertical Cavity Surface Emitting LasersSong, Y.-K. et al. | 2000
- 391
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Gain Saturation in (In,Ga)N-GaN-(Al,Ga)N Laser StructuresMichler, P. et al. | 2000
- 397
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Current Injection Emission at 333 nm from Al0.03Ga0.97N-Al0.25Ga0.75N Multi Quantum Well Ultraviolet Light Emitting DiodesKinoshita, A. et al. | 2000
- 403
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Papers presented at the Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen-Berlin, Germany, March 6 to 10, 2000 - Optical Properties of Cubic GaN Grown on 3C-SiC (100) Substrates by Metalorganic Vapor Phase EpitaxyWu, J. et al. | 2000
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Rapid Research Notes - Observation of Misfit Dislocation Strain-Induced Surface Features of a Si-Ge-Si Heterostructure Using Total Reflection X-Ray TopographyMcNally, P.J. et al. | 2000