Fabrication of heterostructure p-b-Fe0.95Mn0.05Si2-n-Si diodes by Fe+ and Mn+ co-implantation in Si(100) substrates (Englisch)
- Neue Suche nach: Katsumata, H.
- Neue Suche nach: Katsumata, H.
- Neue Suche nach: Makita, Y.
- Neue Suche nach: Takada, T.
- Neue Suche nach: Tanoue, H.
- Neue Suche nach: Kobayashi, N.
- Neue Suche nach: Hasegawa, M.
- Neue Suche nach: Kakemoto, H.
- Neue Suche nach: Tsukamoto, T.
- Neue Suche nach: Uekusa, S.
In:
Thin solid films
;
381
, 2
; 244-250
;
2001
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Fabrication of heterostructure p-b-Fe0.95Mn0.05Si2-n-Si diodes by Fe+ and Mn+ co-implantation in Si(100) substrates
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Beteiligte:Katsumata, H. ( Autor:in ) / Makita, Y. / Takada, T. / Tanoue, H. / Kobayashi, N. / Hasegawa, M. / Kakemoto, H. / Tsukamoto, T. / Uekusa, S.
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Erschienen in:Thin solid films ; 381, 2 ; 244-250
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Erscheinungsort:Amsterdam [u.a.] Elsevier
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Erscheinungsdatum:2001
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ISSN:
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ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 33.68
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 535/3485
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Schlagwörter:
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Klassifikation:
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Datenquelle:
Inhaltsverzeichnis – Band 381, Ausgabe 2
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- 171
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Electronic structure and interband optical properties of b-FeSi2Lange, H. et al. | 2001
- 176
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Calculation of electronic energy and density of state of iron-disilicides using a total-energy pseudopotential method, CASTEPImai, Yoji et al. | 2001
- 183
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Electronic structure of b-FeSi2 modified by r.f.-plasma of semiconducting SiH4, GeH4 gasMatsubara, K. et al. | 2001
- 188
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Ion beam synthesized silicides: growth, characterization and devicesHomewood, K.P. et al. | 2001
- 194
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Study of structure and optical properties of b-FeSi2 precipitates formed by ion-implantation of Fe+ in Si(100) and effects of co-implantation of Fe+ and Si+ in amorphous SiO2Oyoshi, K. et al. | 2001
- 202
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Formation of b-FeSi2 precipitates at the SiO2-Si interface by Fe+ ion implantation and their structural and optical propertiesOyoshi, K. et al. | 2001
- 209
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Dependence of photoluminescence from b-FeSi2 and induced deep levels in Si on the size of b-FeSi2 balls embedded in Si crystalsSuemasu, T. et al. | 2001
- 214
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Preparation of b-FeSi2 films by chemical vapor depositionMukaida, Masakazu et al. | 2001
- 219
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Raman spectroscopic study of ion-beam synthesized polycrystalline b-FeSi2 on Si(100)Maeda, Yoshihito et al. | 2001
- 225
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Microstructure characterization of ion-beam synthesized b-FeSi2 phase by transmission electron microscopySugiyama, Masaaki et al. | 2001
- 231
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Microstructure of semiconducting MnSi1.7 and b-FeSi2 layers grown by surfactant-mediated reactive deposition epitaxyTatsuoka, Hirokazu et al. | 2001
- 236
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Microstructure of b-FeSi2 thin films prepared by pulsed laser depositionYoshitake, Tsuyoshi et al. | 2001
- 244
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Fabrication of heterostructure p-b-Fe0.95Mn0.05Si2-n-Si diodes by Fe+ and Mn+ co-implantation in Si(100) substratesKatsumata, H. et al. | 2001
- 251
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Small polaron of b-FeSi2 obtained from optical measurementsKakemoto, H. et al. | 2001
- 256
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Photovoltaic properties of ion-beam synthesized b-FeSi2-n-Si heterojunctionsMaeda, Yoshihito et al. | 2001
- 262
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Electrical and photovoltaic properties of iron-silicide-silicon heterostructures formed by pulsed laser depositionLiu, Zhengxin et al. | 2001
- 267
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Spectral sensitivity enhancement by thin film of b-FeSi2-Si composite prepared by RF-sputtering depositionOkajima, K. et al. | 2001
- 276
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Single crystal growth of non-stoichiometric b-FeSi2 by chemical transport reactionBehr, G. et al. | 2001
- 282
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Transport properties of Cr-doped b-FeSi2Arushanov, E. et al. | 2001
- 287
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Thermoelectric properties of b-FeSi2 single crystals and polycrystalline b-FeSi2+x thin filmsHeinrich, A. et al. | 2001
- 296
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Thermoelectric properties of Ru- or Ge-doped b-FeSi2 films prepared by electron beam depositionTsunoda, Tatsuo et al. | 2001
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Preface| 2001