A comparative study of deep levels created by low dose implantation of hydrogen, oxygen and silicon into MOCVD grown n-GaAs (Englisch)
- Neue Suche nach: Tan, H.H.
- Neue Suche nach: Tan, H.H.
- Neue Suche nach: Williams, J.S.
- Neue Suche nach: Jagadish, C.
In:
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
;
106
, 1-4
; 313-317
;
1995
-
ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:A comparative study of deep levels created by low dose implantation of hydrogen, oxygen and silicon into MOCVD grown n-GaAs
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Beteiligte:
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Erschienen in:
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Verlag:
- Neue Suche nach: Elsevier
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Erscheinungsort:Amsterdam [u.a.]
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Erscheinungsdatum:1995
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ISSN:
-
ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 535/3450
- Neue Suche nach: 33.00
- Weitere Informationen zu Basisklassifikation
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Schlagwörter:
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Klassifikation:
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Datenquelle:
Inhaltsverzeichnis – Band 106, Ausgabe 1-4
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Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
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Disordering and defect production in silicon by keV ion irradiation studied by molecular dynamicsCaturla, M.J. et al. | 1995
- 9
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Systematic study of the ion beam mixing of oxide markers into aluminaCooper, E.A. et al. | 1995
- 17
-
Metastable alloys synthesised by ion mixing and thermodynamic and kinetic modellingLiu, B.X. et al. | 1995
- 23
-
a-Emission channeling studies of the lattice site of oversized atoms implanted in Fe and Ni single crystalsWachter, J.De et al. | 1995
- 23
-
-Emission channeling studies of the lattice site of oversized atoms implanted in Fe and Ni single crystalsDe Wachter, J. / Blaesser, S. / Hofsaess, H. / Jahn, S. / Lindroos, M. / Moons, R. / Pattyn, H. / Restle, M. / Vantomme, A. / Wahl, U. et al. | 1995
- 28
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Atomic mixing induced in metallic bilayers by high electronic excitationsLeguay, R. et al. | 1995
- 34
-
Characterization of Si(100) sputtered with low energy argonHuang, L.J. et al. | 1995
- 38
-
Radiation damage features on mica and L-valine probed by scanning force microscopyBarlo Daya, D.D.N. et al. | 1995
- 43
-
Defect production by MeV cluster impactsDöbeli, M. et al. | 1995
- 47
-
Model for the electronic stopping of channeled ions in silicon around the stopping power maximumSimionescu, A. et al. | 1995
- 51
-
Electronic stopping power of <100> axial-channelled He ions in Si crystalsSantos, J.H.R.dos et al. | 1995
- 55
-
Sputtering of Cu thin films on Ru(0001) by Ne+ ion bombardmentShen, Y.G. et al. | 1995
- 60
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Valence band electronic redistribution in ion-beam-mixed Pd-Ag alloysChae, K.H. et al. | 1995
- 65
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Influence of nuclear energy deposition density on the ion-beam mixing of metallic bilayersThomé, L. et al. | 1995
- 68
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Ion beam modification of metal-polymer interfaces for improved adhesionRatchev, B.A. et al. | 1995
- 74
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C60 film growth and the interaction of fullerenes with bare and H terminated Si surfaces, studied by molecular dynamicsBeardmore, K. et al. | 1995
- 80
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Novel beam effect: Mass transport due to the lateral component of the ion momentumRoorda, S. et al. | 1995
- 84
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ECR plasma-assisted deposition of Al2O3 and dispersion-strengthened AlOxBarbour, J.C. et al. | 1995
- 90
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High pressure phases produced by low energy ion implantation with reference to cubic boron nitrideMcKenzie, D.R. et al. | 1995
- 96
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Ions as a useful tool for carbon film deposition and modificationUllmann, J. et al. | 1995
- 106
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Synthesis and corrosion properties of silicon nitride films by ion beam assisted depositionBaba, K. et al. | 1995
- 110
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Ion beam assisted deposition of ZrO2 thin filmsNeubeck, K. et al. | 1995
- 116
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Internal stresses in nickel films prepared by ion beam and vapor depositionKuratani, N. et al. | 1995
- 120
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Synthesis of (Ti, Al)N films by ion beam assisted depositionSetsuhara, Y. et al. | 1995
- 126
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Synthesis of epitaxial SnxGe1 - x alloy films by ion-assisted molecular beam epitaxyHe, G. et al. | 1995
- 133
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Heavily carbon-doped GaAs layers prepared by low-energy ion-beam impingement during molecular beam epitaxyIida, T. et al. | 1995
- 137
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Silicon carbide and oxide deposition using low energy (5-100 eV) beams of C+, O+, and CO+ ionsKim, B.C. et al. | 1995
- 142
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On the mechanism of crystal growth orientation of ion beam assisted deposited thin filmsEnsinger, W. et al. | 1995
- 147
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Ion beam assisted deposition in the synthesis and fracture of metal-ceramic microlaminatesWas, G.S. et al. | 1995
- 153
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Characterization of cubic boron nitride films grown by mass separated ion beam depositionHofsäss, H. et al. | 1995
- 159
-
Surface treatment by low energy metal ion irradiationWeber, T. et al. | 1995
- 165
-
Surface modifications by gas cluster ion beamsYamada, I. et al. | 1995
- 170
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Retention of nitrogen implanted into metalsMiyagawa, Y. et al. | 1995
- 174
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Ne+, Ar+ and Xe+ ion bombardment induced and suppressed topography on SiVishnyakov, V. et al. | 1995
- 179
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Volatile products and endpoint detection in reactive ion etching of III-V compounds with a broad beam ECR sourceMelville, D.L. et al. | 1995
- 183
-
Point defects in MeV ion-implanted silicon studied by deep level transient spectroscopySvensson, B.G. et al. | 1995
- 191
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Implant damage and transient enhanced diffusion in SiEaglesham, D.J. et al. | 1995
- 198
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Role of defects during amorphization and relaxation processes in SiMotooka, T. et al. | 1995
- 206
-
Ion beam-induced interfacial growth in Si and silicidesFortuna, F. et al. | 1995
- 216
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Secondary defect formation in self-ion irradiated siliconGoldberg, R.D. et al. | 1995
- 222
-
Transient enhanced diffusion of dopant in preamorphised Si: The role of EOR defectsBonafos, C. et al. | 1995
- 227
-
Studies of the interactions between (311) defects and type I and II dislocation loops in Si+ implanted siliconJones, K.S. et al. | 1995
- 233
-
Vacancy related defect profiles in MeV cluster-ion irradiated siliconHallén, A. et al. | 1995
- 237
-
Silicon implanted with MeV 12C ions; temperature dependence of defect formation at low dosesLalita, J. et al. | 1995
- 242
-
Amorphization of silicon by elevated temperature ion irradiationGoldberg, R.D. et al. | 1995
- 248
-
The residual electrically active damage in ion implanted SiKringhøj, P. et al. | 1995
- 252
-
Hyperfine interaction study of the decoration of the internal wall of nanosized voids by impurity probesDeweerd, W. et al. | 1995
- 257
-
Germanium implantation into amorphous silicon filmsErshov, A.V. et al. | 1995
- 262
-
Effect of Ge-related mechanical strain on defect and impurity behaviour in ion-implanted siliconSuprun-Belevich, Yu et al. | 1995
- 267
-
Time dependent electrical properties of GaAs doped with radioactive isotopes 67Ga and 71AsRohrlack, G. et al. | 1995
- 271
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Elevated temperature Ge implantation into Si and the effect of subsequent thermal annealingWong, W.C. et al. | 1995
- 277
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Ion mass dependence of normalized regrowth rate in MeV ion beam induced epitaxial crystallizationKinomura, A. et al. | 1995
- 281
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Ion beam induced epitaxial regrowth and layer by layer amorphization of compound semiconductors during MeV ion implantationGlaser, E. et al. | 1995
- 289
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Ion-beam-induced epitaxial crystallisation of metastable Si1 - x - y)GexCy layers fabricated by Ge and C ion implantationKobayashi, N. et al. | 1995
- 294
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Implantation isolation in n-type InP bombarded with He+ and B+Sargunas, V. et al. | 1995
- 298
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The temperature dependence of ion-beam-induced amorphization in b-SiCWeber, W.J. et al. | 1995
- 298
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The temperature dependence of ion-beam-induced amorphization in -SiCWeber, W. J. / Wang, L. M. et al. | 1995
- 303
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Temperature and dose dependence of damage production in Si+ and Se+ implanted InPWendler, E. et al. | 1995
- 308
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Ion implantation damage of InP and InGaAsAkano, U.G. et al. | 1995
- 313
-
A comparative study of deep levels created by low dose implantation of hydrogen, oxygen and silicon into MOCVD grown n-GaAsTan, H.H. et al. | 1995
- 318
-
Silicon implant annealing kinetics in GaAsGwilliam, R. et al. | 1995
- 323
-
Electronic and annealing properties of a metastable He-ion implantation induced defect in GaAsAuret, F.D. et al. | 1995
- 328
-
Considerations on effect of local temperature on primary defect productionGyulai, J. et al. | 1995
- 333
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P-N junction formation in 6H-SiC by acceptor implantation into n-type substrateRao, M.V. et al. | 1995
- 339
-
Investigation of radiation damage in ion implanted and annealed SiC layersWesch, W. et al. | 1995
- 346
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Recrystallisation of relaxed SiGe alloy layersKringhøj, P. et al. | 1995
- 350
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Ion beam induced epitaxial crystallization and interfacial amorphization at amorphous-crystalline interfaces in germaniumBachmann, T. et al. | 1995
- 355
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Compound formation by ion beam synthesis and a comparison with alternative methods such as deposition and growth or wafer bondingMantl, S. et al. | 1995
- 364
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Electrical, optical and materials properties of ion beam synthesised (IBS) FeSi2Reeson, K.J. et al. | 1995
- 372
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High-dose oxygen ion implanted heterointerfaces in siliconAshok, S. et al. | 1995
- 379
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Chemical and electrical properties of cavities in silicon and germaniumMyers, S.M. et al. | 1995
- 386
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Materials issues and device performances for light emitting Er-implanted SiCoffa, S. et al. | 1995
- 393
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Ion beam synthesis of planor opto-electronic devicesPolman, A. et al. | 1995
- 400
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Ion-beam induced sequential epitaxy of , and gamma-FeSi~2 in Si(100) at 320CMaltez, R. L. / Behar, M. / Lin, X. W. et al. | 1995
- 400
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Ion-beam induced sequential epitaxy of a, b and g-FeSi2 in Si(100) at 320(degree)CMaltez, R.L. et al. | 1995
- 404
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The formation and thermal stability of ion-beam-synthesized ternary MexFe1 - xSi2 (MeVantomme, A. et al. | 1995
- 404
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The formation and thermal stability of ion-beam-synthesized ternary Me~xFe~1~-~xSi~2 (Me = Co, Ni) in Si(111)Vantomme, A. / Wu, M. F. / Langouche, G. / Tavares, J. / Bender, H. et al. | 1995
- 409
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Implantation-induced defects in high-dose O-implanted SiEllingboe, S.L. et al. | 1995
- 415
-
Silicon on an insulator produced by helium implantation and oxidationRaineri, V. et al. | 1995
- 419
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Impurity effects on oxygen precipitation induced by MeV implants in Cz siliconRimini, E. et al. | 1995
- 424
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Diffusion and trapping of Au to cavities induced by H-implantation in SiWong-Leung, J. et al. | 1995
- 429
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Incorporation and stability of erbium in sapphire by ion implantationAlves, E. et al. | 1995
- 433
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Correlation of size and photoluminescence for Ge nanocrystals in SiO2 matricesYang, C.M. et al. | 1995
- 438
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Photorefractive waveguides produced by ion-implantation of fused silicaVerhaegen, M. et al. | 1995
- 442
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Channel waveguides formed by germanium implantation in fused silicaLeech, P.W. et al. | 1995
- 447
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Production of buried waveguides in PMMA by high energy ion implantationRück, D.M. et al. | 1995
- 452
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Optical characterization of doped top layers in SOI structures formed by ion implantationYuehui, Yu et al. | 1995
- 457
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Bandgap tuning of semiconductor Quantum Well laser structures using high energy ion implantationCharbonneau, S. et al. | 1995
- 461
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Ion implantation induced compositional intermixing in the InGaAs-InP MQW system for wavelength shifted waveguidesWan, J.Z. et al. | 1995
- 466
-
Novel optical features in Cd+ ion-implanted LEC-grown GaAsKawasumi, Y. et al. | 1995
- 471
-
Optical integration of laterally modified multiple quantum well structures by implantation enhanced intermixing to realize gain coupled DFB lasersHofsäss, V. et al. | 1995
- 477
-
Optical activation of Er3+ in silicon co-implanted with carbonUekusa, S. et al. | 1995
- 480
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Structure, morphology and melting hysteresis of ion-implanted nanocrystalsAndersen, H.H. et al. | 1995
- 492
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Graphitization of diamond by ion impact: Fundamentals and applicationsKalish, R. et al. | 1995
- 500
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Creep of a crystalline metallic layer induced by GeV heavy ion irradiationBenyagoub, A. et al. | 1995
- 504
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High-dose implantation of Pt ions into Ni using the sacrificial layer technique: A comparison of Al and Al2O3 sacrificial layersDuffy, A.G. et al. | 1995
- 511
-
The effect of a post-treatment of amorphous carbon films with high energy ion beamsKolitsch, A. et al. | 1995
- 517
-
Conversion of insulating thin films of MgIn2O4 into transparent conductors by ion implantationHosono, H. et al. | 1995
- 522
-
Corrosion behavior of nitrogen implanted aluminumWalter, K.C. et al. | 1995
- 527
-
Boronizing of steel by outward transport of Fe atoms during dynamic ion mixingYasunaga, T. et al. | 1995
- 532
-
Dislocation structure in coarse-grained copper after ion implantationSharkeev, Yu P. et al. | 1995
- 538
-
On the high temperature oxidation of polycrystalline and single crystal nickel after ion implantationRao, Z. et al. | 1995
- 545
-
Molecular dynamics and experimental studies of preferred orientation induced by compressive stressMcCulloch, D.G. et al. | 1995
- 550
-
Ion beam promoted lithium absorption in glassy polymeric carbonZimmerman, R.L. et al. | 1995
- 555
-
Radiation damage and conductivity changes in ion implanted diamondYang, Q. et al. | 1995
- 560
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Implantation of Ti and N into soda lime glass to minimize solar load and reflectivityWas, G.S. et al. | 1995
- 567
-
Damage of M-type baryum hexaferrites induced by GeV-heavy ion irradiationsCostantini, J.M. et al. | 1995
- 573
-
The irradiation damage response of MgO . 3Al2O3 spinel single crystal under high-fluence ion-irradiationSickafus, K.E. et al. | 1995
- 579
-
Ion beam induced epitaxial recrystallization of alumina thin films deposited on sapphireYu, N. et al. | 1995
- 583
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The effect of dense and dilute collision cascades on helium bubbles in metalsDonnelly, S.E. et al. | 1995
- 589
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Ion beam mixing and radiation enhanced diffusion in metal-ceramic interfacesNeubeck, K. et al. | 1995
- 597
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In situ ion-beam analysis and modification of sol-gel zirconia thin filmsLevine, T.E. et al. | 1995
- 602
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The substitutionality of hafnium in sapphire by ion implantation and low temperature annealingMarques, J.G. et al. | 1995
- 606
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The use of low energy, ion induced nuclear reactions for proton radiotherapy applicationsHorn, K.M. et al. | 1995
- 618
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Ion bombardment into inner wall surfaces of tubes and their biomedical applicationsIwaki, M. et al. | 1995
- 624
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MEVVA ion-implantation of high Tc superconductorsMartin, J.W. et al. | 1995
- 630
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Local material removal by focused ion beam milling and etchingLipp, S. et al. | 1995
- 636
-
An investigation of dopant gases in plasma immersion ion implantationQin, S. et al. | 1995
- 641
-
Cross-sectional Raman microscopy of MeV implanted diamondJamieson, D.N. et al. | 1995
- 646
-
Synthesis of unattainable ion implantation profiles - 'Pseudo-implantation'Brown, I.G. et al. | 1995
- 651
-
A mevva ion source for simultaneous implantation of gas and metal ionsWolf, B.H. et al. | 1995
- 657
-
Simultaneous mass-analyzed positive and negative low-energy ion beam deposition apparatusHorino, Y. et al. | 1995
- 662
-
Industrial application of ion assisted surface modificationKohlhof, K. et al. | 1995
- 671
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