Recombination Centers Identification in Very Thin Silicon Epitaxial Layers via Lifetime Measurements (Englisch)
- Neue Suche nach: Daliento, S.
- Neue Suche nach: Daliento, S.
- Neue Suche nach: Sanseverino, A.
- Neue Suche nach: Spirito, P.
- Neue Suche nach: Sarro, P.M.
- Neue Suche nach: Zeni, L.
In:
IEEE electron device letters
;
17
, 3
; 148-150
;
1996
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Recombination Centers Identification in Very Thin Silicon Epitaxial Layers via Lifetime Measurements
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Beteiligte:
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Erschienen in:IEEE electron device letters ; 17, 3 ; 148-150
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsort:New York, NY
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Erscheinungsdatum:1996
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ISSN:
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ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 770/5670
- Neue Suche nach: 53.51
- Weitere Informationen zu Basisklassifikation
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Schlagwörter:
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Klassifikation:
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Datenquelle:
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Recombination Centers Identification in Very Thin Silicon Epitaxial Layers via Lifetime MeasurementsDaliento, S. et al. | 1996
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