Modulation doping in a-Si:H-a-Ge:H multilayer structures (Unbekannt)
- Neue Suche nach: Yamashita, K.
- Neue Suche nach: Yamashita, K.
- Neue Suche nach: Deki, H.
- Neue Suche nach: Miyazaki, S.
- Neue Suche nach: Hirose, M.
In:
Journal of non-crystalline solids
;
198
; 800-803
;
1996
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:Modulation doping in a-Si:H-a-Ge:H multilayer structures
-
Beteiligte:
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Erschienen in:Journal of non-crystalline solids ; 198 ; 800-803
-
Verlag:
- Neue Suche nach: North-Holland Publ. Co.
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Erscheinungsort:Amsterdam
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Erscheinungsdatum:1996
-
ISSN:
-
ZDBID:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Print
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Sprache:Unbekannt
- Neue Suche nach: 51.45 / 51.60 / 33.61 / 35.90
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 535/3475
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Schlagwörter:
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Klassifikation:
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Datenquelle:
Inhaltsverzeichnis – Band 198
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- 1
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Hydrogen in siliconDavis, E. A. et al. | 1996
- 1
-
Hydrogen in silicon (Invited paper)Davis, E.A. et al. | 1996
- 11
-
Ultrafast excitation and de-excitation of the Si-H stretching mode in a-Si:HXu, Z. et al. | 1996
- 15
-
Structural heterogeneity in nitrogen-rich a-SiN3:HHayashi, H. et al. | 1996
- 15
-
Structural heterogeneity in nitrogen-rich a-SiN~x:HHayashi, H. / Matsumoto, S. / Nakayama, Y. et al. | 1996
- 19
-
Nearest-neighbor repulsion-perturbed silicon monohydride bond-stretching vibrations in hydrogenated and deuterated silicon nitrogen alloy filmsLucovsky, G. et al. | 1996
- 24
-
Amorphization from the quenched high-pressure phase in tetrahedrally-bonded materialsTsuji, K. et al. | 1996
- 28
-
Roles of bonded hydrogens and oxygen vacancies on crystallization of hydrogenated amorphous indium tin oxide (a-ITO:H) filmsAndo, M. et al. | 1996
- 33
-
Structural analysis of amorphous thin films by time of flight mass spectrometryTsuboi, S. et al. | 1996
- 36
-
Vibrations of Bethe lattices with an icosahedral basis: Application to amorphous boronShirai, K. et al. | 1996
- 40
-
Incorporation and thermal stability of hydrogen in amorphous silicon and germanium (Invited paper)Beyer, W. et al. | 1996
- 40
-
Incorporation and thermal stability of hydrogen in amorphous silicon and germaniumBeyer, W. et al. | 1996
- 46
-
Hydrogen-induced defects in polycrystalline siliconNickel, N. H. et al. | 1996
- 46
-
Hydrogen-induced defects in polycrystalline silicon (Invited paper)Nickel, N.H. et al. | 1996
- 52
-
Hydrogen motion in hydrogenated amorphous silicon (a-Si:H)Hari, P. et al. | 1996
- 56
-
First principles simulations of local and extended migration of H and defects in a-SiFedders, P.A. et al. | 1996
- 60
-
Hydrogen dilution effects on a-Si:H and a-SiGe:H materials properties and solar cell performanceXu, X. et al. | 1996
- 65
-
Stability of the number of silicon-hydrogen bonds upon photoillumination of undoped amorphous hydrogenated siliconCorey, R.L. et al. | 1996
- 69
-
Characterisation of thin amorphous silicon films with multiple internal reflectance spectroscopyFameli, G. et al. | 1996
- 73
-
Hydrogen passivation of dopants in amorphous siliconPietruszko, S.M. et al. | 1996
- 77
-
Nuclear magnetic resonance studies of amorphous deuterated silicon nitride thin filmsSantos-Filho, P. et al. | 1996
- 81
-
Hydrogen incorporation in device-quality a-Si:H deposited at low temperatureZellama, K. et al. | 1996
- 85
-
Electronic structure of amorphous semiconductors studied by both X-ray photoelectron and soft X-ray spectroscopiesSenemaud, C. et al. | 1996
- 85
-
Electronic structure of amorphous semiconductors studied by both X-ray photoelectron and soft X-ray spectroscopies (Invited paper)Sénémaud, C. et al. | 1996
- 91
-
Topologically determined midgap states in amorphous carbon: Five- and sevenfold ringsKádas, K. et al. | 1996
- 94
-
Sulfur doping in a-SiSx:HWang, S.L. et al. | 1996
- 98
-
Excitation spectroscopy of photoinduced absorption in amorphous siliconMalinovsky, I. et al. | 1996
- 103
-
Intracavity photothermal measurements of ultralow absorptionHajiev, F. et al. | 1996
- 107
-
Direct determination of the quadratic electro-optic coefficient in an a-Si:H based waveguideZelikson, M. et al. | 1996
- 111
-
Plasma deposited non-stoichiometric hydrogenated germanium sulfide a-Ge1 - xSx:H (x < 0.3)Drüsedau, T.P. et al. | 1996
- 115
-
Visible luminescence from Ge nanocrystals embedded in a-Si1 - x)Ox films: Correlation of optical properties and size distributionZacharias, M. et al. | 1996
- 119
-
Detection of optical non-linearities in amorphous semiconductors by caustic crossing in an intensity-modulated laser beamTikhomirov, V.K. et al. | 1996
- 124
-
Phenomenological scaling of optical absorption in amorphous semiconductorsOkamoto, H. et al. | 1996
- 128
-
Visible room-temperature photoluminescence from oxidized germaniumChen, J.H. et al. | 1996
- 132
-
Preparation of new a-SiO2 by glow discharge decomposition of TICS and its application to photoluminescence absorption spectroscopyOhsaki, T. et al. | 1996
- 136
-
Electronic structure of amorphous germanium-nitrogen alloys: A UV photoelectron spectroscopy studyComedi, D. et al. | 1996
- 140
-
Non-linear hopping transport in band tails (Invited paper)Baranovskii, S.D. et al. | 1996
- 140
-
Non-linear hopping transport in band tailsBaranovskii, S. D. / Thomas, P. et al. | 1996
- 146
-
The moving-photocarrier-grating technique for the determination of transport parameters in thin film semiconductorsHundhausen, M. et al. | 1996
- 146
-
The moving-photocarrier-grating technique for the determination of transport parameters in thin film semiconductors (Invited paper)Hundhausen, M. et al. | 1996
- 153
-
Dual beam and transient infrared stimulated photoconductivity in hydrogenated amorphous silicon at 4.2 KFritzsche, H. et al. | 1996
- 157
-
AC loss originating from mesoscopic and macroscopic inhomogeneities in hydrogenated amorphous siliconShimakawa, K. et al. | 1996
- 161
-
Determination of the density of states in amorphous silicon-carbon alloys using a Fourier transformation of transient photocurrent dataBayley, P.A. et al. | 1996
- 165
-
Working hypothesis to explore novel wide band gap electrically conducting amorphous oxides and examplesHosono, H. et al. | 1996
- 170
-
Time of flight experiments on amorphous and crystalline boronTakeda, M. et al. | 1996
- 174
-
Photoconductive a-GaN prepared by reactive sputteringNonomura, S. et al. | 1996
- 178
-
Observation of Meyer-Neldel rule in extended energy regime using novel a-Si:H TFTsKondo, M. et al. | 1996
- 182
-
Measurement of carrier lifetime in materials exhibiting anomalous dispersionMarshall, J.M. et al. | 1996
- 186
-
Identification and explanation of peculiar features in hole SCLC-TOF in a-Si:H pin-diodes from numerical modellingBrüggemann, R. et al. | 1996
- 190
-
Comments on space-charge-limited time-of-flight measurements in post-transit mode applied to a-Si:H based solar cellsFejfar, A. et al. | 1996
- 194
-
Fundamental transport mechanisms and high field mobility measurements in amorphous siliconGu, Q. et al. | 1996
- 198
-
Hot-electron induced electroluminescence and avalanche multiplication in hydrogenated amorphous siliconToyama, T. et al. | 1996
- 202
-
Electric field heated electrons in a-Si:H -- New featuresJuska, G. et al. | 1996
- 206
-
Transient forward bias switching behaviour of amorphous pin diodesSchmid, G. et al. | 1996
- 210
-
Photo-thermoelectric power of a-Si as a function of incident wavelengthJones, D.I. et al. | 1996
- 214
-
Einstein's relationship for hopping electronsBaranovskii, S.D. et al. | 1996
- 218
-
Effect of pressure on variable range hopping in amorphous semiconductorsNosaka, H. et al. | 1996
- 222
-
On the description of hopping-energy relaxation and transport in disordered systemsBaranovskii, S.D. et al. | 1996
- 226
-
Difference in transient transport behavior between amorphous inorganic and organic solidsNaito, H. et al. | 1996
- 230
-
High field transport in the inversion layer of amorphous silicon thin film transistorsHundhausen, M. et al. | 1996
- 234
-
Photocurrent response times in amorphous silicon thin film transistorsSchwarz, R. et al. | 1996
- 238
-
Correlation between transport properties of a-Si:H layers and cell performances incorporating these layersWyrsch, N. et al. | 1996
- 242
-
Charge carrier transport in diluted hopping systemsArkhipov, V.I. et al. | 1996
- 246
-
Electroluminescence and forward bias currents in amorphous silicon p-i-n diodes: The effect of steady state bias and large i-layer thicknessCarius, R. et al. | 1996
- 251
-
Geminate and non-geminate recombination in amorphous silicon (a-Si:H)Schubert, M. et al. | 1996
- 255
-
Distribution of lifetime of photoluminescence in band-edge modulated a-Si1 - xNx:H filmsOgihara, C. et al. | 1996
- 259
-
Study of sub-bandgap photo-induced absorption in a-Si:H using excitation spectroscopy in a waveguide configurationZelikson, M. et al. | 1996
- 263
-
Sublinear photoconductivity in n-type a-Si:H - Analysis and computer modellingMain, C. et al. | 1996
- 267
-
Semiclassical model of electrically detected magnetic resonance in undoped a-Si:HLips, K. et al. | 1996
- 271
-
Light-intensity dependence of excess carrier lifetimesAdriaenssens, G.J. et al. | 1996
- 276
-
Photoconductivity during 30ns laser pulses in a-Si:HTzanetakis, P. et al. | 1996
- 280
-
A rigid band model for recombination in a-Si alloysWang, T.-H. et al. | 1996
- 284
-
Lifetime distribution of photoluminescence in a-Si:H based alloysOheda, H. et al. | 1996
- 288
-
Modulated photocurrent spectroscopy of defect states in undoped a-Si:HHattori, K. / Okamoto, H. / Hamakawa, Y. et al. | 1996
- 288
-
Modulated photocurrent spectroscopy of defect states in undoped a-Si:H (Invited paper)Hattori, K. et al. | 1996
- 295
-
The relationship between hydrogen and electronic defects in amorphous silicon (Invited paper)Deane, S.C. et al. | 1996
- 295
-
The relationship between hydrogen and electronic defects in amorphous siliconDeane, S. C. / Powell, M. J. et al. | 1996
- 300
-
Time of flight mobility measurements in a-Si:H grown under controlled-energy ion-bombardmentGanguly, G. et al. | 1996
- 304
-
Precise measurement of the deep defects and surface states in a-Si:H films by absolute CPMFejfar, A. et al. | 1996
- 309
-
Following directly the effect of the various deep states on the phototransport properties of a-Si:HLubianiker, Y. et al. | 1996
- 313
-
Random walk approach for the proper estimation of density of defect states in amorphous chalcogenidesGanjoo, A. / Yoshida, A. / Shimakawa, K. et al. | 1996
- 313
-
Random walk approach for the proper estimation of density of detect states in amorphous chalcogenidesGanjoo, A. et al. | 1996
- 318
-
Thermal bias annealing experiments on aluminum-silicon nitride-hydrogenated amorphous silicon top gate structuresDayoub, F. et al. | 1996
- 322
-
The bias-annealing effect on a-Si:H photodiodeIchinose, H. et al. | 1996
- 326
-
Electric field concentration at electrode edge with decreasing amorphous silicon defect densityIhara, H. et al. | 1996
- 330
-
Spatial distribution of phosphorus atoms surrounding spin centers of P-doped hydrogenated amorphous silicon elucidated by pulsed ESRYamasaki, S. et al. | 1996
- 334
-
New nitrogen-related defects in nitrogen-rich a-SixN1 - x):HChen, D.Q. et al. | 1996
- 338
-
Observation of two creation processes for light-induced paramagnetic spins in a-Si1 - xOx:H alloysZhang, J. et al. | 1996
- 342
-
Defect metastability associated with oxygen and nitrogen impurity atoms in hydrogenated amorphous silicon filmsLucovsky, G. et al. | 1996
- 347
-
Mechanism of Staebler-Wronski effect: Negative effective-U and positive effective-U nature of the bistable dangling-bonds in a-Si, a-Si:H and c-Si by ab initio molecular-dynamics simulationOrita, N. et al. | 1996
- 351
-
Stable and metastable defect distributions in undoped and doped a-Si:H obtained from analysis of the constant photocurrent methodSiebke, F. et al. | 1996
- 355
-
Density of states and capture cross-sections in annealed and light-soaked hydrogenated amorphous silicon layersLongeaud, C. et al. | 1996
- 359
-
Distribution of dangling bonds in light-soaked and in high-temperature-annealed a-Si:HZhou, J.-H. et al. | 1996
- 363
-
Density of states in amorphous semiconductors determined from transient photoconductivity experiment: Computer simulation and experimentNaito, H. et al. | 1996
- 367
-
Electron and hole-spin densities in undoped illuminated a-Si:HSaleh, R. et al. | 1996
- 371
-
Defect density of a-Si:H films grown at high deposition ratesAlhallani, B. et al. | 1996
- 375
-
Defects in magnetron-sputtered a-Ge1 - xNx:HMin, H. et al. | 1996
- 379
-
Preparation and properties of a-Ge1 - xNxYokomichi, H. et al. | 1996
- 383
-
Localized states of a-GaP:N by nitrogen ion beam assisted depositionKubota, H. et al. | 1996
- 387
-
Defect-pool model for doped a-Si:HSchmal, J. et al. | 1996
- 391
-
A novel approach to the analysis of sub-bandgap absorption in a-Si:H based materialsChen, I.-S. et al. | 1996
- 395
-
Origin of charged dangling bonds in nitrogen-doped hydrogenated amorphous siliconMasuda, A. et al. | 1996
- 399
-
Band tails and defect density in p-type doped hydrogenated amorphous germaniumComedi, D. et al. | 1996
- 403
-
Properties of amorphous boron nitride thin filmsZedlitz, R. et al. | 1996
- 407
-
Equilibration and stability in undoped amorphous silicon (Invited paper)Wagner, S. et al. | 1996
- 407
-
Equilibration and stability in undoped amorphous siliconWagner, S. / Gleskova, H. / Nakata, J.-I. et al. | 1996
- 415
-
Light-induced metastability of 'stable' a-Si:H deposited from silane-dichlorosilane mixtures-comprehensive characterizationHata, N. et al. | 1996
- 419
-
Improved stability of a-Si:H fabricated from SiH2Cl2 by ECR hydrogen plasmaAzuma, M. et al. | 1996
- 423
-
Stability of the mobility-lifetime product of holes in undoped a-Si:H under illuminationWang, F. et al. | 1996
- 428
-
Creation of interface states between SiO2 and a-Si:H in a-Si:H thin film transistors by bias-stressKim, S.K. et al. | 1996
- 432
-
Light-induced metastable changes in defect density and photoconductivity of a-Si:H between 4.2 and 300 KStradins, P. et al. | 1996
- 436
-
Creation of metastable defects in a-Si:H by keV-electron irradiation at different temperaturesDiehl, F. et al. | 1996
- 441
-
On the lack of observable light-induced H diffusion near room temperatureBranz, H.M. et al. | 1996
- 445
-
Dependence of the equilibration temperature on hydrogen content in doped amorphous siliconPietruszko, S.M. et al. | 1996
- 449
-
Influence of the dilute-phase SiH bond concentration on the steady-state defect density in a-Si:HGodet, C. et al. | 1996
- 453
-
What causes the inverse Staebler-Wronski effect in p-type a-Si:H?Isomura, M. et al. | 1996
- 458
-
Short-laser-pulse and steady-light induced degradation of intrinsic p-type and compensated a-Si:HTzanetakis, P. et al. | 1996
- 462
-
Some aspects on an improved stability of a-Si:H and a-Ge:H films with respect to their microstructureBauer, S. et al. | 1996
- 466
-
Comparative study of light-induced photoconductivity decay in hydrogenated amorphous siliconBeyer, W. et al. | 1996
- 470
-
Non-monotone kinetics of persistent photoconductivity in compensated a-Si:H filmsKazanskii, A.G. et al. | 1996
- 474
-
Stability versus structure in glow discharge hydrogenated amorphous silicon obtained from a wide range of deposition conditionsVignoli, S. et al. | 1996
- 478
-
Influence of annealing above the deposition temperature on metastability in amorphous siliconVanecek, M. et al. | 1996
- 482
-
Density of states and photoconductivity light degradation in a-Si:H at different temperaturesMariucci, L. et al. | 1996
- 486
-
Dispersive processes in the annealing of light- and thermally-induced dangling bonds in a-Si:HTakeda, K. et al. | 1996
- 490
-
Light-soaking in a-SiC:H films grown by PECVD in undiluted and hydrogen diluted SiH4 + CH4 gas mixturesFathallah, M. et al. | 1996
- 495
-
Photocreated neutral dangling bonds in N-doped and undoped a-Si:H filmsZhang, Q. et al. | 1996
- 499
-
The isochronal annealing study on the bias stressed amorphous silicon thin film transistorsHwang, C.-S. et al. | 1996
- 503
-
Introduction to focused session on 'anomalous relaxation'Yonezawa, F. et al. | 1996
- 507
-
Anomalous relaxation in fractal and disordered systems (Invited paper)Fujiwara, S. et al. | 1996
- 507
-
Anomalous relaxation in fractal and disordered systemsFujiwara, S. / Yonezawa, F. et al. | 1996
- 512
-
Bias light induced defect relaxation phenomena in hydrogenated amorphous siliconCohen, J. D. / Zhong, F. et al. | 1996
- 512
-
Bias light induced detect relaxation phenomena in hydrogenated amorphous siliconCohen, J.D. et al. | 1996
- 517
-
Origin of the anomalous pulse-width dependence in capacitance transient measurements on n-type a-Si:HJackson, W.B. et al. | 1996
- 521
-
Continuous time random walk model as a model of anomalous relaxationGomi, S. et al. | 1996
- 525
-
Emission limited filling of deep defects in transient capacitance experimentsLips, K. et al. | 1996
- 530
-
New results using capacitance transient studies to investigate deep defect relaxation in hydrogenated amorphous siliconKwon, D. et al. | 1996
- 535
-
Structural memory model of slow defect relaxation in hydrogenated amorphous siliconBranz, H. M. / Unold, T. / Fedders, P. A. et al. | 1996
- 535
-
Structural memory model of slow detect relaxation in hydrogenated amorphous siliconBranz, H.M. et al. | 1996
- 540
-
Improved mobility-lifetime product of holes in a-Si:H n-i-p devices: A consequence of structural relaxation?Cuniot, M. et al. | 1996
- 544
-
Ultra-low frequency CPM of a-Si:H and relaxationHasegawa, S. et al. | 1996
- 548
-
The quasineutrality condition in amorphous semiconductors: Reformulation of the 'lifetime-relaxation' criterionShah, A. et al. | 1996
- 552
-
Structural relaxation in glass transition of chalcogenide amorphous semiconductorsMatsuishi, K. et al. | 1996
- 556
-
Debye to non-Debye relaxation in As-Te-Se glassesTitus, S.S.K. et al. | 1996
- 559
-
Role of hydrogen dilution in improvement of a-SiGe:H alloysGanguly, G. et al. | 1996
- 563
-
Growth of high quality amorphous silicon-germanium films using low pressure remote electron-cyclotron-resonance dischargeKaushal, S. et al. | 1996
- 567
-
Improved a-Si1 - xGex:H of large x deposited by PECVDWickboldt, P. et al. | 1996
- 572
-
Electronic structure and light induced degradation of amorphous silicon-germanium alloysZhong, F. et al. | 1996
- 577
-
Bonding structures in highly photoconductive a-SiC:H films deposited by hybrid-plasma chemical vapor depositionFujii, T. et al. | 1996
- 582
-
Device-grade a-SiGe:H alloys prepared by nanometer deposition-H2 plasma annealing methodXu, J. et al. | 1996
- 587
-
Deposition of microcrystalline hydrogenated silicon,germanium alloy (c-Si~xGe~1~-~x:H) films by reactive magnetron sputtering (RMS)Cho, S. M. / Christensen, C. / Lucovsky, G. / Maher, D. M. et al. | 1996
- 587
-
Deposition of microcrystalline hydrogenated silicon, germanium alloy (mc-Six Ge1 - x:H) films by reactive magnetron sputtering (RMS)Cho, S.M. et al. | 1996
- 592
-
Time-of-flight and post-transit spectroscopy of a-Si1 - x)Cx:H alloysEliat, A. et al. | 1996
- 596
-
Compositional, optoelectronic and structural properties of amorphous silicon-nitrogen alloys deposited by plasma enhanced chemical vapor depositionGiorgis, F. et al. | 1996
- 601
-
Equilibration in amorphous silicon nitride alloysDunnett, B. et al. | 1996
- 605
-
Tetrahedrally bonded amorphous carbon (Invited paper)Milne, W.I. et al. | 1996
- 605
-
Tetrahedrally bonded amorphous carbonMilne, W. I. et al. | 1996
- 611
-
Field emission from a-C:H and a-C:H:NAmaratunga, G.A.J. et al. | 1996
- 615
-
Electronic processes in hydrogenated amorphous carbonRobertson, J. et al. | 1996
- 619
-
Light generation and transportation in luminescent a-SiC:H thin film waveguidesRüter, D. et al. | 1996
- 623
-
Optical and luminescence properties of polymer-like a-C:H films deposited in a dual-mode PECVD reactorBourée, J.E. et al. | 1996
- 628
-
Cathodic and anodic glow discharge silicon-carbon alloys (a-Si~1~-~xC~x:H) from x = 0.5 to 1: A comparative study by photoemission (UPS) and photoluminescence (PL)Alvarez, F. / Rovira, P. I. / Bormioli, M. / Souto, S. / Tessler, L. R. / Camargo, S. S. et al. | 1996
- 628
-
Cathodic and anodic glow discharge silicon-carbon alloys (a-Si1 - xCx:H) from xAlvarez, F. et al. | 1996
- 632
-
Temperature dependence of 1H-NMR relaxation in hydrogenated amorphous carbon sample seriesPocsik, I. et al. | 1996
- 636
-
Hydrogen bonding analysis in amorphous hydrogenated carbon by a combination of infrared absorption and thermal effusion experimentsStief, R. et al. | 1996
- 641
-
The density of states of ta-C, ta-C:H and a-C:H as determined by X-ray excited photoelectron spectroscopy, and molecular dynamics calculationSchäfer, J. et al. | 1996
- 646
-
Temperature dependence of electron spin resonance in amorphous carbon filmsKugler, S. et al. | 1996
- 649
-
Preparation and optical properties of doubly-oriented poly-(di-methyl-silane) filmsHattori, R. et al. | 1996
- 653
-
Photo-induced structural change in amorphous organic polysilanes: Comparison with hydrogenated amorphous siliconNaito, H. et al. | 1996
- 657
-
Photoinduced annihilation of bonds in amorphous poly(methylphenylsilane)Nakayama, Y. / Kurando, T. / Hayashi, H. / Oka, K. / Dohmaru, T. et al. | 1996
- 657
-
Photoinduced annihilation of s bonds in amorphous poly(methylphenylsilane)Nakayama, Y. et al. | 1996
- 661
-
Field-induced dissociation of optical excitations in conjugated polymersArkhipov, V.I. et al. | 1996
- 665
-
Characterization and application of carbazole modified polysiloxanes to electrochromic displaysBartlett, I.D. et al. | 1996
- 669
-
Vectoral and scalar photoinduced effects in chalcogenide glasses (Invited paper)Elliott, S.R. et al. | 1996
- 669
-
Vectoral and scalar photoinduced effects in chalcogenide glassesElliott, S. R. / Tikhomirov, V. K. et al. | 1996
- 675
-
Comparison between electrical properties and electronic structure of variously-prepared germanium selenide filmsAdriaenssens, G.J. et al. | 1996
- 680
-
Optical properties and structure of unhydrogenated, hydrogenated, and zinc-alloyed a-GexSe1 - x films prepared by radio-frequency sputteringChoi, J. et al. | 1996
- 684
-
Transient photoconduction and photoinduced phenomenon in ion-conducting amorphous semiconductorsItoh, M. et al. | 1996
- 688
-
Photoemission and inverse-photoemission study of the electronic structure of p- and n-type amorphous Ge-Se-Bi filmsMatsuda, O. et al. | 1996
- 692
-
MuSR simulation of hydrogen centres in amorphous semiconductors -- The case of germanium selenide glassSingh, A. et al. | 1996
- 696
-
Photoinduced effects in amorphous chalcogenide films by vacuum ultra-violet lightHayashi, K. et al. | 1996
- 700
-
Raman and infrared spectra of amorphous semiconductors (GeS 2))1 - x(Bi2S3)x systemsOnari, S. et al. | 1996
- 705
-
High-pressure effects in Si-As-Te amorphous chalcogenide glasses fabricated under microgravity environmentShams-Kolahi, W. et al. | 1996
- 709
-
Photostructural changes in amorphous selenium: An in situ EXAFS study at low temperatureKolobov, A.V. et al. | 1996
- 714
-
Photoinduced phenomena in As2S3 glass under sub-bandgap excitationTanaka, K. et al. | 1996
- 719
-
Appearance and reorientation of photoinduced anisotropy in chalcogenide glassy filmsLyubin, V. et al. | 1996
- 723
-
Thermally and photo-induced irreversible changes in the optical properties of amorphous GexSe100 - x filmsSleeckx, E. et al. | 1996
- 728
-
On the origin of p-type conductivity in amorphous chalcogenidesKolobov, A.V. et al. | 1996
- 732
-
Photoluminescence study of glassy Ge(SxSe1 - x)2Wada, Y. et al. | 1996
- 736
-
Structural properties of As2Se3 fibersHari, P. et al. | 1996
- 740
-
Laser spot size dependence of photo-induced crystallization process in amorphous GeSe2 filmNakamura, M. et al. | 1996
- 744
-
Kinetics and reaction products of the photo-induced solid state chemical reaction between silver and amorphous (As0.33 S0.67)100 - x Tex layersWagner, T. et al. | 1996
- 749
-
Photo- and electron-induced chemical modifications in Ag-As(Ge)-S(Se) glassesYoshida, N. et al. | 1996
- 753
-
Temperature dependence of Raman spectra in amorphous, crystalline and liquid GeSe2Wang, Y. et al. | 1996
- 758
-
Heating rate dependence of phase transition temperature in Se7Te3 glassesNakayama, K. et al. | 1996
- 762
-
A model for the photo-electro ionic phenomena in chalcogenide glassesAniya, M. et al. | 1996
- 766
-
Fabrication and testing of microlens arrays for the IR based on chalcogenide glassy resistsEisenberg, N.P. et al. | 1996
- 769
-
Photodarkening in As-S films and its application in grating fabricationZakery, A. et al. | 1996
- 774
-
Spectral inhomogeneity - A key issue for understanding relaxation in amorphous matterPocsik, I. et al. | 1996
- 778
-
Investigation of interface state density between a-Si:H and insulating layers by ESR and photothermal deflection spectroscopyUmezu, I. et al. | 1996
- 782
-
Observation of zero differential resistivity in a-Si:H barriers -- On the absence of quantum confinement in amorphous semiconductors for high fieldsDrüsedau, T.P. et al. | 1996
- 787
-
Atomic force microscopy and scanning tunneling microscopy studies on the growth mechanism of a-Si:H film on graphite substrateMatsuse, M. et al. | 1996
- 792
-
Excitation spectrum of luminescence in a-Si:H-a-Si3N4:H multilayersMurayama, K. et al. | 1996
- 796
-
Dependence of light propagation in random multilayers a-Si:H-a-Si3N4 + x:H on incident angle, delocalization of p-polarized light and its explanation by extended Brewster angle: Experiments and simulationYamada, Y. et al. | 1996
- 800
-
Modulation doping in a-Si:H-a-Ge:H multilayer structuresYamashita, K. et al. | 1996
- 804
-
Interlayer coupling effect in low temperature magnetoresistance of amorphous Si-Nb multilayer filmsOchiai, Y. et al. | 1996
- 808
-
Optical properties of amorphous As2Se3-As2S8 multilayersHamanaka, H. et al. | 1996
- 813
-
Examination of (crystallized a-Ge:H)-a-SiNx:H multilayers which display photoluminescenceWickboldt, P. et al. | 1996
- 817
-
Implication of subband broadening in the quantum well of a-Si:H-a-Ge:H multilayersOhmura, M. et al. | 1996
- 821
-
Microstructures and optical properties in crystallized a-Si:H multi-quantum wells using excimer laser annealingHuang, X. et al. | 1996
- 825
-
Theory of room temperature quantized resistance effects in metal-a-Si:H-metal thin film structuresHajto, J. et al. | 1996
- 829
-
The hydrogenated amorphous silicon-nanodisperse metal (SIMAL) system - Films of unique electronic propertiesDrüsedau, T.P. et al. | 1996
- 833
-
Visible electroluminescence from crystallized a-Si:H-a-SiNx: H multiquantum well structuresChen, K. et al. | 1996
- 837
-
Summary of a focused session on nanocrystalline SiRobertson, J. et al. | 1996
- 840
-
Light from Si-nanoparticle systems -- A comprehensive view (Invited paper)Koch, F. et al. | 1996
- 847
-
Formation and electronic states of Si nanocrystallites in amorphous SiZhao, X. et al. | 1996
- 853
-
A comparison of the optical properties of ultrathin amorphous and crystalline silicon filmsNguyen, H.V. et al. | 1996
- 857
-
Light emitting silicon, recent progressKocka, J. / Pelant, I. / Fejfar, A. et al. | 1996
- 857
-
Light emitting silicon, recent progress (Invited paper)Kocka, J. et al. | 1996
- 863
-
STM and Raman study of the evolution of the surface morphology in mc-Si:HIkuta, K. et al. | 1996
- 863
-
STM and Raman study of the evolution of the surface morphology in c-Si:HIkuta, K. / Toyoshima, Y. / Yamasaki, S. / Matsuda, A. / Tanaka, K. et al. | 1996
- 867
-
The grain size in microcrystalline silicon: Correlation between atomic force microscopy, UV reflectometry, ellipsometry, and X-ray diffractometryBardet, E. et al. | 1996
- 871
-
Microcrystalline silicon growth by the layer-by-layer technique: Long term evolution and nucleation mechanismsRoca-i-Cabarrocas, P. et al. | 1996
- 875
-
Nanocrystalline silicon formation in a SiH4 plasma cellOtobe, M. et al. | 1996
- 879
-
Direct fabrication of SiGe crystallites on glass substrate: From nanocrystals to microcrystalsHanna, J.-i. et al. | 1996
- 883
-
Fabrication of high-quality poly-Si thin films combined with in situ real-time spectroscopic ellipsometryAkasaka, T. et al. | 1996
- 887
-
Laser induced nucleation and growth of polycrystalline siliconToet, D. et al. | 1996
- 891
-
The effect of hydrogen species on the electronic properties of nc-Si:H prepared in a triode PECVD systemChen, K. et al. | 1996
- 895
-
Deposition of nanocrystalline silicon films (nc-Si:H) from a pure ECWR-SiH4 plasmaScheib, M. et al. | 1996
- 899
-
Nanocrystalline silicon -- From disordered insulator to dirty metalTaguchi, M. et al. | 1996
- 903
-
Enhanced optical absorption in microcrystalline silicon aBeck, N. et al. | 1996
- 903
-
Enhanced optical absorption in microcrystalline siliconBeck, N. / Meier, J. / Fric, J. / Remes, Z. / Poruba, A. / Flueckiger, R. / Pohl, J. / Shah, A. / Vanecek, M. et al. | 1996
- 907
-
Optoelectronic properties of highly conductive microcrystalline SiC produced by laser crystallisation of amorphous SiCLau, S.P. et al. | 1996
- 911
-
Quantum size effects on the conductivity in porous siliconLee, W.H. et al. | 1996
- 915
-
Photoluminescence from silicon chainlike structures in a-SiO x):H filmsNakayama, Y. et al. | 1996
- 919
-
Ge nanocrystals with a sharp size distribution: A detailed study of the crystallization of a-Si1 - xOxGey alloy filmsZacharias, M. et al. | 1996
- 923
-
Correlation between structural, optical and electrical properties of mc-Si filmsKrankenhagen, R. et al. | 1996
- 923
-
Correlation between structural, optical and electrical properties of c-Si filmsKrankenhagen, R. / Schmidt, M. / Grebner, S. / Poschenrieder, M. / Henrion, W. / Sieber, I. / Koynov, S. / Schwarz, R. et al. | 1996
- 927
-
Structural investigation and growth of -type microcrystalline silicon prepared at different plasma excitation frequenciesHapke, P. et al. | 1996
- 927
-
Structural investigation and growth of (n)-type microcrystalline silicon prepared at different plasma excitation frequenciesHapke, P. / Luysberg, M. / Carius, R. / Tzolov, M. / Finger, F. / Wagner, H. et al. | 1996
- 931
-
Role of hydrogen in the growth of hydrogenated microcrystalline siliconShirai, H. et al. | 1996
- 935
-
High rate deposition of mC-Si with plasma gun CVDImajyo, N. et al. | 1996
- 935
-
High rate deposition of c-Si with plasma gun CVDImajyo, N. et al. | 1996
- 940
-
High-quality polycrystalline silicon thin film prepared by a solid phase crystallization methodMatsuyama, T. et al. | 1996
- 945
-
Pulsed-laser-induced crystallization of fluorinated amorphous and microcrystalline silicon filmsChoi, H.S. et al. | 1996
- 949
-
Porous silicon as a near-ideal disordered semiconductorLubianiker, Y. et al. | 1996
- 953
-
Phonon-assisted luminescence excitation in porous siliconMurayama, K. et al. | 1996
- 957
-
The femtosecond optical response of porous, amorphous and crystalline siliconBehren, J.von et al. | 1996
- 961
-
Green and blue light emitting devices using Si-based porous materialsMimura, H. et al. | 1996
- 965
-
Time-resolved photoluminescence of porous silicon under double-pulse excitationKomuro, S. et al. | 1996
- 969
-
Oxygen plasma induced enhancement and fatigue-suppression of the photoluminescence from porous SiO'Keeffe, P. et al. | 1996
- 973
-
Electrical characterization of visible emitting electroluminescent Schottky diodes based on n-type porous silicon and on highly doped n-type porous polysiliconLazarouk, S. et al. | 1996
- 977
-
Non-linear optical properties of porous siliconKanemitsu, Y. et al. | 1996
- 981
-
Insights into deposition processes for amorphous semiconductor materials and devices from real time spectroscopic ellipsometry (Invited paper)Collins, R.W. et al. | 1996
- 981
-
Insights into deposition processes for amorphous semiconductor materials and devices from real time spectroscopic ellipsometryCollins, R. W. / Burnham, J. S. / Kim, S. / Koh, J. / Lu, Y. / Wronski, C. R. et al. | 1996
- 987
-
Enhancement of the deposition rate of a-Si:H by introduction of all electronegative molecule into a silane dischargeIkeda, T. et al. | 1996
- 987
-
Enhancement of the deposition rate of a-Si:H by introduction of an electronegative molecule into a silane dischargeIkeda, T. / Osborne, I. S. / Hata, N. / Matsuda, A. et al. | 1996
- 991
-
Steady state defect density and annealing kinetics of light-induced defects in a-Si:H deposited from 'new' deposition techniquesOsborne, I.S. et al. | 1996
- 995
-
The surface reaction in the high-rate growth of a-Si:H.Cl from SiH2Cl2 + SiH4Nakata, M. et al. | 1996
- 999
-
A study of surface reactions during the growth of B-doped a-Si:H using the intermittent deposition techniqueKamei, T. et al. | 1996
- 1003
-
A new deposition parameter to control the carrier drift mobility in a-Si:HGanguly, G. et al. | 1996
- 1007
-
Effect of ion bombardment during plasma CVD on the film properties of a-Si:H studied by IEC plasma CVDSasaki, T. et al. | 1996
- 1012
-
Initial stages of microcrystalline silicon film growthKoynov, S. et al. | 1996
- 1017
-
Characteristics of a-Si:H films prepared by a novel laminar flow photo-chemical vapor deposition methodYamaguchi, T. et al. | 1996
- 1021
-
Improvement of surface morphology and bulk structure of a-SiC:H filmsIshizuka, Y. et al. | 1996
- 1026
-
Selective deposition of amorphous germanium on Si with respect to SiO2 by organometallic CVDProkop, J. et al. | 1996
- 1029
-
Real time observations of surface reactions during a-Si:H deposition or H2 plasma annealing by using FT-IR-ATRMiyoshi, Y. et al. | 1996
- 1034
-
Measurement of the concentration of hydrogen radicals and their recombination probability on a-Si:HTsuji, N. et al. | 1996
- 1038
-
New diagnostic aspects of high rate a-Si:H deposition in a VHF plasmaHeintze, M. et al. | 1996
- 1042
-
Behavior of surface hydrogen on a-Ge:HToyoshima, Y. et al. | 1996
- 1046
-
Fabrication of high quality silicon related films with band-gap of 1.5 eV by chemical annealingFutako, W. et al. | 1996
- 1050
-
A new helix plasma source for VHF PECVD of a-Si:HSchade, K. et al. | 1996
- 1054
-
Characteristics of the hot-wire CVD reactor on a-Si:H depositionTsuji, N. et al. | 1996
- 1058
-
The effect of hydrogen dilution on the aminosilane plasma regime used to deposit nitrogen-rich amorphous silicon nitrideMurley, D. et al. | 1996
- 1063
-
Improved quality of high deposition rate a-Si:H films prepared at usual substrate temperatureAlhallani, B. et al. | 1996
- 1067
-
Low band gap amorphous silicon deposited under He dilution in the gamma regime of an rf glow discharge: properties and stabilityMiddya, A. R. / Hazra, S. / Ray, S. / Barua, A. K. / Longeaud, C. et al. | 1996
- 1067
-
Low band gap amorphous silicon deposited under He dilution in the g regime of an rf glow discharge: Properties and stabilityMiddya, A.R. et al. | 1996
- 1072
-
Preparation, structural and optical properties of novel hydrogenated and fluorinated amorphous silicon-sulfur alloysAl-Dallal, S. et al. | 1996
- 1076
-
Material and device consideration for high efficiency a-Si alloy-based multijunction cellsGuha, S. et al. | 1996