Role of the buildup oscillations on the speed of resonant tunneling diodes (Englisch)
- Neue Suche nach: Romo, Roberto
- Neue Suche nach: Romo, Roberto
- Neue Suche nach: Villavicencio, Jorge
In:
Applied physics letters
;
78
, 12
; 1769-1771
;
2001
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:Role of the buildup oscillations on the speed of resonant tunneling diodes
-
Beteiligte:Romo, Roberto ( Autor:in ) / Villavicencio, Jorge
-
Erschienen in:Applied physics letters ; 78, 12 ; 1769-1771
-
Verlag:
- Neue Suche nach: AIP
-
Erscheinungsort:Melville, NY
-
Erscheinungsdatum:2001
-
ISSN:
-
ZDBID:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Print
-
Sprache:Englisch
- Neue Suche nach: 770/3400
- Neue Suche nach: 33.00
- Weitere Informationen zu Basisklassifikation
-
Schlagwörter:
-
Klassifikation:
-
Datenquelle:
Inhaltsverzeichnis – Band 78, Ausgabe 12
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1649
-
Rigorous optical modeling of multilayer organic light-emitting diode devicesKahen, K. B. et al. | 2001
- 1652
-
Influence of electric field on the photoluminescence of a liquid crystalline monosubstituted polyacetyleneHuang, Yuan Ming / Ge, Weikun / Lam, Jacky W. Y. / Tang, Ben Zhong et al. | 2001
- 1655
-
Room-temperature midinfrared electroluminescence from asymmetric AlSbAs/InAs/CdMgSe heterostructures grown by molecular beam epitaxyIvanov, S. V. / Solov’ev, V. A. / Moiseev, K. D. / Sedova, I. V. / Terent’ev, Ya. V. / Toropov, A. A. / Meltzer, B. Ya. / Mikhailova, M. P. / Yakovlev, Yu. P. / Kop’ev, P. S. et al. | 2001
- 1658
-
The effect of strain field seeding on the epitaxial growth of Ge islands on Si(001)Dunbar, A. / Halsall, M. / Dawson, P. / Bangert, U. / Miura, M. / Shiraki, Y. et al. | 2001
- 1661
-
Effect of oxidation on the thermoelectric properties of PbTe and PbS epitaxial filmsRogacheva, E. I. / Krivulkin, I. M. / Nashchekina, O. N. / Sipatov, A. Yu. / Volobuev, V. V. / Dresselhaus, M. S. et al. | 2001
- 1664
-
Effect of annealing time and temperature on the formation of threading and projected range dislocations in 1 MeV boron implanted SiJones, K. S. / Jasper, Craig / Hoover, Allen et al. | 2001
- 1667
-
Electron and trap dynamics in As-ion-implanted and annealed GaAsGiniu˜nas, L. / Danielius, R. / Tan, H. H. / Jagadish, C. / Adomavicˇius, R. / Krotkus, A. et al. | 2001
- 1670
-
Luminescence from Si nanocrystals in silica deposited by helicon activated reactive evaporationCheylan, S. / Elliman, R. G. / Gaff, K. / Durandet, A. et al. | 2001
- 1673
-
Broadband semiconductor superlattice detector for THz radiationKlappenberger, F. / Ignatov, A. A. / Winnerl, S. / Schomburg, E. / Wegscheider, W. / Renk, K. F. / Bichler, M. et al. | 2001
- 1676
-
Sb-doped SrTiO3 transparent semiconductor thin filmsWang, H. H. / Chen, F. / Dai, S. Y. / Zhao, T. / Lu, H. B. / Cui, D. F. / Zhou, Y. L. / Chen, Z. H. / Yang, G. Z. et al. | 2001
- 1679
-
Hydrogen depth-profiling in chemical-vapor-deposited diamond films by high-resolution elastic recoil detectionKimura, Kenji / Nakajima, Kaoru / Yamanaka, Sadanori / Hasegawa, Masataka / Okushi, Hideyo et al. | 2001
- 1682
-
Electrical characterization of TiN/a-C/Si devices grown by magnetron sputtering at room temperatureKonofaos, N. / Angelis, C. T. / Evangelou, E. K. / Panayiotatos, Y. / Dimitriadis, C. A. / Logothetidis, S. et al. | 2001
- 1685
-
Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodesHsu, J. W. P. / Manfra, M. J. / Lang, D. V. / Richter, S. / Chu, S. N. G. / Sergent, A. M. / Kleiman, R. N. / Pfeiffer, L. N. / Molnar, R. J. et al. | 2001
- 1688
-
Photoluminescence and electrical characteristics of the two-dimensional electron gas in Si delta-doped GaN layersTeng, C. W. / Aboelfotoh, M. O. / Davis, R. F. / Muth, J. F. / Kolbas, R. M. et al. | 2001
- 1691
-
Effect of low-temperature annealing on transport and magnetism of diluted magnetic semiconductor (Ga,&hthinsp;Mn)AsHayashi, Takashi / Hashimoto, Yoshiaki / Katsumoto, Shingo / Iye, Yasuhiro et al. | 2001
- 1694
-
Characterization of defects in doped InGaAsN grown by molecular-beam epitaxyFleck, A. / Robinson, B. J. / Thompson, D. A. et al. | 2001
- 1697
-
Si/SiGe/Si:Er:O light-emitting transistors prepared by differential molecular-beam epitaxyDu, Chun-Xia / Duteil, Fabrice / Hansson, Go¨ran V. / Ni, Wei-Xin et al. | 2001
- 1700
-
Electrical activation of carbon in GaAs: Implantation temperature effectsDanilov, I. / de Souza, J. P. / Murel, A. V. / Pudenzi, M. A. A. et al. | 2001
- 1703
-
Electronic structure and conduction in a metal–semiconductor digital composite: ErAs:InGaAsDriscoll, D. C. / Hanson, M. / Kadow, C. / Gossard, A. C. et al. | 2001
- 1706
-
Interface reaction of NiO/NiFe and its influence on magnetic propertiesYu, G. H. / Chai, C. L. / Zhu, F. W. / Xiao, J. M. / Lai, W. Y. et al. | 2001
- 1709
-
Cobaltous oxide infiltrated yttrium iron garnet thin films as high-coercivity media for data storageRastogi, A. C. / Moorthy, V. N. / Dhara, Sandip et al. | 2001
- 1712
-
Photoinduced insulator–metal transition in La0.81MnO3/Al2O3/Nb tunnel junctionsGilabert, A. / Plecenik, A. / Fro¨hlich, K. / Gazˇi, Sˇ. / Pripko, M. / Mozolova´, Zˇ. / Machajdı´k, D. / Benˇacˇka, Sˇ. / Medici, M. G. / Grajcar, M. et al. | 2001
- 1715
-
Direct detection of the magnetic flux noise from moving vortices in wide YBa2Cu3O7-d grain boundary junctionsHirano, S. et al. | 2001
- 1715
-
Direct detection of the magnetic flux noise from moving vortices in wide YBa2Cu3O7−δ grain boundary junctionsHirano, S. / Oyama, H. / Kuriki, S. / Morooka, T. / Nakayama, S. et al. | 2001
- 1718
-
Gadolinium silicate gate dielectric films with sub-1.5 nm equivalent oxide thicknessGupta, J. A. / Landheer, D. / McCaffrey, J. P. / Sproule, G. I. et al. | 2001
- 1721
-
Ferroelectric lead barium zirconate thin film of high fatigue resistanceTseng, J. H. / Wu, T. B. et al. | 2001
- 1724
-
Investigation of dead-layer thickness in SrRuO3/Ba0.5Sr0.5TiO3/Au thin-film capacitorsSinnamon, L. J. / Bowman, R. M. / Gregg, J. M. et al. | 2001
- 1727
-
Hypersonic frequency and damping anomalies in relaxor ferroelectric Pb(Zn1/3Nb2/3)O3Kuok, M. H. / Ng, S. C. / Fan, H. J. / Iwata, M. / Ishibashi, Y. et al. | 2001
- 1730
-
Micro-Raman and dielectric phase transition studies in antiferroelectric PbZrO3 thin filmsDobal, P. S. / Katiyar, R. S. / Bharadwaja, S. S. N. / Krupanidhi, S. B. et al. | 2001
- 1733
-
Bi3.25La0.75Ti3O12 thin films prepared on Si (100) by metalorganic decomposition methodHou, Yun / Xu, Xiao-Hong / Wang, Hong / Wang, Min / Shang, Shu-Xia et al. | 2001
- 1736
-
Oblique stacking of three-dimensional dome islands in Ge/Si multilayersSutter, P. / Mateeva-Sutter, E. / Vescan, L. et al. | 2001
- 1739
-
Modeling of electronic transport in scanning tunneling microscope tip–carbon nanotube systemsYamada, Toshishige et al. | 2001
- 1742
-
Raman spectroscopy of carbon-induced germanium dotsGuedj, C. / Beyer, A. / Mu¨ller, E. / Gru¨tzmacher, D. et al. | 2001
- 1745
-
Interference pattern of a coherent electron beam by localized leakage magnetic fieldPark, Jeong Young / Kim, S. H. / Park, W. G. / Kuk, Y. et al. | 2001
- 1748
-
Stress fields around defects and fibers in a polymer using carbon nanotubes as sensorsZhao, Qing / Wood, Jonathan R. / Wagner, H. Daniel et al. | 2001
- 1751
-
Height dispersion control of InAs-InP quantum dots emitting at 1.55 (micro)mParanthoen, C. et al. | 2001
- 1751
-
Height dispersion control of InAs/InP quantum dots emitting at 1.55 μmParanthoen, C. / Bertru, N. / Dehaese, O. / Le Corre, A. / Loualiche, S. / Lambert, B. / Patriarche, G. et al. | 2001
- 1754
-
Nonlinear dispersion properties of subwavelength photonic crystalsVijayalakshmi, S. / Zhang, Y. / Grebel, H. / Yaglioglu, Gul / Dorsinville, R. / White, C. W. et al. | 2001
- 1757
-
Work function at the tips of multiwalled carbon nanotubesGao, Ruiping / Pan, Zhengwei / Wang, Zhong L. et al. | 2001
- 1760
-
Quantum-confined Stark shift in electroreflectance of InAs/InxGa1−xAs self-assembled quantum dotsHsu, T. M. / Chang, W.-H. / Huang, C. C. / Yeh, N. T. / Chyi, J.-I. et al. | 2001
- 1763
-
Band alignments and photon-induced carrier transfer from wetting layers to Ge islands grown on Si(001)Wan, J. / Jin, G. L. / Jiang, Z. M. / Luo, Y. H. / Liu, J. L. / Wang, Kang L. et al. | 2001
- 1766
-
Effects of sulfur treatment on electrical and optical performance of InGaN/GaN multiple-quantum-well blue light-emitting diodesHuh, Chul / Kim, Sang-Woo / Kim, Hyun-Soo / Kim, Hyun-Min / Hwang, Hyunsang / Park, Seong-Ju et al. | 2001
- 1769
-
Role of the buildup oscillations on the speed of resonant tunneling diodesRomo, Roberto / Villavicencio, Jorge et al. | 2001
- 1772
-
Reflectionless tunneling in planar Nb/GaAs hybrid junctionsGiazotto, Francesco / Cecchini, Marco / Pingue, Pasqualantonio / Beltram, Fabio / Lazzarino, Marco / Orani, Daniela / Rubini, Silvia / Franciosi, Alfonso et al. | 2001
- 1775
-
Manipulation of magnetic microbeads in suspension using micromagnetic systems fabricated with soft lithographyDeng, Tao / Whitesides, George M. / Radhakrishnan, Mala / Zabow, Gary / Prentiss, Mara et al. | 2001
- 1778
-
Electrostatic control of microstructure thermal conductivitySupino, Ryan N. / Talghader, Joseph J. et al. | 2001
- 1781
-
Structured doping with light forcesSchulze, Th. / Mu¨ther, T. / Ju¨rgens, D. / Brezger, B. / Oberthaler, M. K. / Pfau, T. / Mlynek, J. et al. | 2001
- 1784
-
Probing radicals in hot wire decomposition of silane using single photon ionizationDuan, H. L. / Zaharias, G. A. / Bent, Stacey F. et al. | 2001
- 1787
-
Parallel atomic force microscopy with optical interferometric detectionSulchek, T. / Grow, R. J. / Yaralioglu, G. G. / Minne, S. C. / Quate, C. F. / Manalis, S. R. / Kiraz, A. / Aydine, A. / Atalar, A. et al. | 2001
- 1790
-
Comment I on “Grain-boundary effects on the electrical resistivity and the ferromagnetic transition temperature of La0.8Ca0.2MnO3” [Appl. Phys. Lett. 77, 118 (2000)]Zhu, T. / Sun, J. R. / Shen, B. G. et al. | 2001
- 1792
-
Response to “Comment I on ‘Grain-boundary effects on the electrical resistivity and the ferromagnetic transition temperature of La0.8Ca0.2MnO3’ ” [Appl. Phys. Lett. 78, 1790 (2001)]Fu, Yonglai et al. | 2001
- 1793
-
Comment II on “Grain-boundary effects on the electrical resistivity and the ferromagnetic transition temperature of La0.8Ca0.2MnO3” [Appl. Phys. Lett. 77, 118 (2000)]Joy, P. A. / Date, S. K. et al. | 2001
- 1794
-
Response to “Comment II on ‘Grain-boundary effects on the electrical resistivity and the ferromagnetic transition temperature of La0.8Ca0.2MnO3’&hthinsp;” [Appl. Phys. Lett. 78, 1793 (2001)]Fu, Yonglai et al. | 2001
- 1795
-
Erratum: “Submilliwatt operation of AlGaN-based ultraviolet light-emitting diode using short-period alloy superlattice” [Appl. Phys. Lett. 78, 399 (2001)]Nishida, T. / Saito, H. / Kobayashi, N. et al. | 2001