Detailed deep trap analysis in Mg-doped p-type GaN layers grown by MOVPE (Englisch)
- Neue Suche nach: Witte, H.
- Neue Suche nach: Witte, H.
- Neue Suche nach: Krtschil, A.
- Neue Suche nach: Lisker, M.
- Neue Suche nach: Krost, A.
- Neue Suche nach: Christen, J.
- Neue Suche nach: Kuhn, B.
- Neue Suche nach: Scholz, F.
In:
Materials science and engineering / B
;
82
, 1
; 85-87
;
2001
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Detailed deep trap analysis in Mg-doped p-type GaN layers grown by MOVPE
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Beteiligte:Witte, H. ( Autor:in ) / Krtschil, A. / Lisker, M. / Krost, A. / Christen, J. / Kuhn, B. / Scholz, F.
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Erschienen in:Materials science and engineering / B ; 82, 1 ; 85-87
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Verlag:
- Neue Suche nach: Elsevier
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Erscheinungsort:Amsterdam [u.a.]
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Erscheinungsdatum:2001
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ISSN:
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ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 51.00 / 51.45
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 535/5100
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Schlagwörter:
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Klassifikation:
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Datenquelle:
Inhaltsverzeichnis – Band 82, Ausgabe 1
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- 1
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PrefaceHoffmann, Axel et al. | 2001
- 2
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Molecular beam epitaxy growth and doping of III-nitrides on Si(111): layer morphology and doping efficiencyCalleja, E. et al. | 2001
- 9
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Structural quality and ordering of MBE grown AlxGa1-xN-layersKirste, L. et al. | 2001
- 12
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Improvement of electrical property and surface morphology of GaN grown by RF-plasma assisted molecular beam epitaxy by introduction of multiple AlN intermediate layerKikuchi, A. et al. | 2001
- 16
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MBE growth of different hexagonal GaN crystal structures on vicinal (100) GaAs substratesGeorgakilas, A. et al. | 2001
- 19
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Characterisation of nitride thin films by electron backscattered diffractionTrager-Cowan, C. et al. | 2001
- 22
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Gallium droplet formation during MOVPE and thermal annealing of GaNKarpov, S.Yu et al. | 2001
- 25
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Growth of c-GaN on Si(100)Nishimura, S. et al. | 2001
- 27
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Angular dispersion of polar phonons in a hexagonal GaN-AlN superlatticeGleize, J. et al. | 2001
- 30
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High nitrogen pressure growth of GaN crystals and their applications for epitaxy of GaN - based structuresGrzegory, I. et al. | 2001
- 35
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Impact of MOCVD-GaN 'templates' on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaNValcheva, E. et al. | 2001
- 39
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Synthesis and characterization of the bulk crystalline carbon-nitride phase synthesised by high-pressure techniqueDymont, V.P. et al. | 2001
- 42
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High etching rate of GaN films by KrF excimer laserChu, Chen-Fu et al. | 2001
- 45
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Prospective investigations of orthorhombic ZnGeN2: synthesis, lattice dynamics and optical propertiesViennois, R. et al. | 2001
- 50
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High rate etching of sapphire wafer using Cl2-BCl3-Ar inductively coupled plasmasSung, Y.J. et al. | 2001
- 53
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Evaluation of SiC as a substrate material for nitride materials heteroepitaxyMasri, P. et al. | 2001
- 56
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Surface morphology of GaN grown by molecular beam epitaxyVézian, S. et al. | 2001
- 59
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p and n type doping of cubic GaN on SiC (001)Martinez-Guerrero, E. et al. | 2001
- 62
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GaN layer structures with buried tungsten nitrides (WNx) using epitaxial lateral overgrowth via MOVPEHiramatsu, K. et al. | 2001
- 65
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Influence of the partial pressure of GaCl3 in the growth process of GaN by HVPE under nitrogenAujol, E. et al. | 2001
- 68
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Epitaxial growth of GaN thin films on sapphire (0001) by pulsed laser deposition: influence of surface preparation and nitridationDeiss, J.L. et al. | 2001
- 71
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Modelling of absorption and emission spectra of InxGa1-xN layers grown by MBESiozade, L. et al. | 2001
- 74
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Effective carrier mass and mobility versus carrier concentration in p- and n-type a-GaN determined by infrared ellipsometry and Hall resistivity measurementsKasic, A. et al. | 2001
- 77
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Defects in undoped and Mg-doped GaN and AlxGa1-xNMeyer, B.K. et al. | 2001
- 82
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Investigation of beryllium implanted P-type GaNYu, Chang-Chin et al. | 2001
- 85
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Detailed deep trap analysis in Mg-doped p-type GaN layers grown by MOVPEWitte, H. et al. | 2001
- 88
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Electronic and vibrational properties of Mg- and O-related complexes in GaNFall, C.J. et al. | 2001
- 91
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Deep levels in MOCVD n-type hexagonal gallium nitride studied by high resolution deep level transient spectroscopyMuret, P. et al. | 2001
- 95
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Deep levels introduced in n-GaN grown by the ELOG technique by high-energy electron irradiationGoodman, S.A. et al. | 2001
- 98
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Characterization of GaN layers grown on porous siliconMissaoui, A. et al. | 2001
- 102
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Processing-induced electron traps in n-type GaNAuret, F.D. et al. | 2001
- 105
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Annealing behavior of Pd-GaN (0001) microstructureKim, C.C. et al. | 2001
- 108
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Microstructure of GaN nucleation layer during initial stage MOCVD growthKim, C.C. et al. | 2001
- 111
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Patterning of GaN by ion implantation-dependent etchingSchiestel, S. et al. | 2001
- 114
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HREM study of basal stacking faults in GaN layers grown over sapphire substratePotin, V. et al. | 2001
- 117
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Multiple atomic configurations of the a edge threading dislocation in GaNChen, J. et al. | 2001
- 120
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The preparation and characterisation of gallium nitride using the Hi-Prexx facilityRussell, D. et al. | 2001
- 123
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The atomic structure and properties of wurtzite GaN epitaxial layersRuterana, P. et al. | 2001
- 128
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Photoluminescence study of GaN grown by pulsed laser deposition in nitrogen atmosphereMah, K.W. et al. | 2001
- 131
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Electron and hole dynamics in GaNYe, Hong et al. | 2001
- 134
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Resonant Rayleigh scattering of exciton-polaritons in nitride-based multiple quantum wellsMalpuech, Guillaume et al. | 2001
- 137
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Time-resolved optical properties of GaN grown by metalorganic vapor phase epitaxy with indium surfactantPozina, G. et al. | 2001
- 140
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Time-resolved spectroscopy of MBE-grown GaN-AlGaN hetero- and homo-epitaxial quantum wellsGallart, M. et al. | 2001
- 143
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Optical properties of GaNAs-GaAs structuresBuyanova, I.A. et al. | 2001
- 148
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Synthesis, structure and optical properties of GaN nanocrystals prepared by sequential ion implantation in dielectricsBorsella, E. et al. | 2001
- 151
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Optical properties of self-assembled InGaN-GaN quantum dotsTaliercio, T. et al. | 2001
- 156
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Nonlinear spectroscopy of homoepitaxial GaNSchweitzer, C. et al. | 2001
- 159
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Etch end-point detection of GaN-based devices using optical emission spectroscopyKim, H.S. et al. | 2001
- 163
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Photoluminescence and absorption spectroscopy of silicon-doped InGaN layersSchenk, H.P.D. et al. | 2001
- 167
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Vertical motional narrowing of exciton-polaritons in GaN based quantum wellsMalpuech, Guillaume et al. | 2001
- 170
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Optical properties of boron nitride thin films deposited by microwave PECVDSoltani, A. et al. | 2001
- 173
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Confined exciton-polariton modes in a thin, homo-epitaxial, GaN film grown by molecular beam epitaxyMorel, Aurélien et al. | 2001
- 178
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Phonons and free carriers in strained hexagonal GaN-AlGaN superlattices measured by infrared ellipsometry and Raman spectroscopySchubert, M. et al. | 2001
- 182
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Raman scattering study of gallium nitride heavily doped with manganeseGebicki, W. et al. | 2001
- 185
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Renormalization of the exciton parameters in piezoelectric nitride quantum structures: the effects of injection intensity and temperatureBigenwald, P. et al. | 2001
- 188
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Pump and probe spectroscopy of InGaN multi quantum well based laser diodesKawakami, Y. et al. | 2001
- 194
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The dependence of the optical energies on InGaN compositionO'Donnell, K.P. et al. | 2001
- 197
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Photoconductance measurements and Stokes shift in InGaN alloysReverchon, J.-L. et al. | 2001
- 200
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Photoluminescence of Ga-face AlGaN-GaN single heterostructuresMartinez-Criado, G. et al. | 2001
- 203
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New form of ordering in AlGaNRuterana, P. et al. | 2001
- 206
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Density-of-states distribution in AlGaN obtained from transient photocurrent analysisNiehus, M. et al. | 2001
- 209
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Photoreflectance investigations of GaN epitaxial layersSitarek, P. et al. | 2001
- 212
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Growth and characterisation of self-assembled cubic GaN quantum dotsAdelmann, C. et al. | 2001
- 215
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Size and shape effects in electromagnetic response of quantum dots and quantum dot arraysMaksimenko, S.A. et al. | 2001
- 218
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Properties of GaAsN-GaAs quantum wells studied by optical detection of cyclotron resonanceHai, P.N. et al. | 2001
- 221
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Donor binding energies in group III-nitride-based quantum wells: influence of internal electric fieldsMorel, A. et al. | 2001
- 224
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InGaN-GaN quantum wells grown by molecular beam epitaxy emitting at 300 K in the whole visible spectrumDamilano, B. et al. | 2001
- 227
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GaN electronics for high power, high temperature applicationsPearton, S.J. et al. | 2001
- 232
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Two-dimensional electron gas transport properties in AlGaN-GaN single- and double-heterostructure field effect transistorsMaeda, Narihiko et al. | 2001
- 238
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Short-channel effects in AlGAN-GaN HEMTsBreitschädel, O. et al. | 2001
- 241
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Temperature dependent electroluminescence in GaN and InGaN-GaN LEDsLancefield, D. et al. | 2001
- 245
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Patterned dielectric mirrors for lateral overgrowth of GaN-based lasers.Kim, Taek et al. | 2001
- 248
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GaN-based high-power laser diodesMiyajima, Takao et al. | 2001
- 253
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Improvement of diodes performance with a multiple-pair buffer layer by MOCVDYang, Chien-Cheng et al. | 2001
- 256
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Optoelectronic characterization of blue InGaN-GaN LEDS grown by MBEDalmasso, S. et al. | 2001
- 259
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Ohmic performance of ZnO and ITO-ZnO contacted with n-type GaN layerTang, Bang-Tai et al. | 2001
- 262
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Femtosecond laser machining of gallium nitrideKim, T. et al. | 2001
- 265
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Formation of ohmic contacts to MOCVD grown p-GaN by controlled activation of MgKaminska, E. et al. | 2001
- 268
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Author index| 2001
- 271
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Subject index| 2001
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Organisers and sponsors| 2001