Ga2O3 thin film for oxygen sensor at high temperature (Englisch)
- Neue Suche nach: Ogita, M.
- Neue Suche nach: Ogita, M.
- Neue Suche nach: Higo, K.
- Neue Suche nach: Nakanishi, Y.
- Neue Suche nach: Hatanaka, Y.
In:
Applied surface science
;
175
, 1
; 721-725
;
2001
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:Ga2O3 thin film for oxygen sensor at high temperature
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Beteiligte:
-
Erschienen in:Applied surface science ; 175, 1 ; 721-725
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Verlag:
- Neue Suche nach: Elsevier
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Erscheinungsort:Amsterdam [u.a.]
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Erscheinungsdatum:2001
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ISSN:
-
ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 52.78 / 35.18 / 33.68
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 535/3485
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Schlagwörter:
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Klassifikation:
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Datenquelle:
Inhaltsverzeichnis – Band 175, Ausgabe 1
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Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
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Characterization of initial one monolayer growth of Ge on Si(1 0 0) and Si on Ge(1 0 0)Ikeda, Keiji et al. | 2001
- 6
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Role of short-period superlattice buffers for the growth of Si0.75Ge0.25 alloy layers on Si(0 0 1) substratesRahman, M.M. et al. | 2001
- 12
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Low-temperature silicon nitride for thin-film electronics on polyimide foil substratesGleskova, H. et al. | 2001
- 17
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Self-assembled monolayers in the context of epitaxial film growthDoudevski, Ivo et al. | 2001
- 27
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Ultra-thin epitaxial Al and Cu films on CaF2-Si(1 1 1)Shusterman, Y.V. et al. | 2001
- 33
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Decay of silicon mounds: scaling laws and description with continuum step parametersIchimiya, A. et al. | 2001
- 36
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Finite temperature simulation of ad-dimer diffusion between dimer row and trough on Si(001)Fu, Chu-Chun et al. | 2001
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Growth kinetics and doping mechanism in phosphorus-doped Si gas-source molecular beam epitaxyTsukidate, Y. et al. | 2001
- 49
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Influence of the electrochemical potential on energy landscapes near step- and island-edges: Ag(100) and Ag(111)Haftel, Michael I. et al. | 2001
- 55
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Kinetic surface patterning in two-particle models of epitaxial growthPimpinelli, Alberto et al. | 2001
- 62
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Terrace-width distributions on vicinal surfaces: generalized Wigner surmise and extraction of step-step repulsionsEinstein, T.L. et al. | 2001
- 69
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Defect controlled diffusion in the epitaxial growth of germanium on Si(1 0 0)Berrie, Cindy L. et al. | 2001
- 77
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Formation of uniform nanoscale Ge islands on Si(1 1 1)-7 x 7 substrateMasuda, Katsuyuki et al. | 2001
- 83
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Imaging of the structure of ultra-thin cobalt silicide films by inelastically backscattered electronsPronin, I.I. et al. | 2001
- 90
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Initial growth of titanium germanosilicide on Ge-Si(1 1 1)Yanagawa, T. et al. | 2001
- 96
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b-FeSi2-base MIS diodes fabricated by sputtering methodEhara, Takashi et al. | 2001
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Photoemission spectroscopy study of the charge accumulation at the K3Sb:Cs surfaceEttema, A.R.H.F. et al. | 2001
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Thermodynamic properties of alkali-chloride filmsKawano, H. et al. | 2001
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Comparative study of low-temperature chloride atomic-layer chemical vapor deposition of TiO2 and SnO2Tarre, A. et al. | 2001
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The preparation of the Agx (As0.33S0.67)100-x amorphous films by optically-induced solid state reaction and the films propertiesWágner, T. et al. | 2001
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Breakdown of the bi-dimensional symmetry in bct Fe layers by epitaxy on Co(1120) surfaceValeri, S. et al. | 2001
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Electromigration of single-layer clustersPierre-Louis, O. et al. | 2001
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Kinetic surface structuring during homoepitaxy of GaAs (110): a model studyVidecoq, A. et al. | 2001
- 146
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Unusual growth phenomena of group III and group V elements on Si(1 1 1) and Ge(1 1 1) surfacesVitali, L. et al. | 2001
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Initial stages of porous Si formation on Si surfaces investigated by infrared spectroscopyKimura, Yasuo et al. | 2001
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Realization of ultrahigh-vacuum-compatible defect-free hydrogen terminated silicon surfaces with the use of a UHV contactless capacitance-voltage methodYoshida, Toshiyuki et al. | 2001
- 169
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CdSe monolayers, embedded in BeTe: analysis of interface vibrations by Raman spectroscopyWagner, V. et al. | 2001
- 175
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Evolution of interface excitations under phase transition in two-dimensional layer of Cs on GaAs(1 0 0) and (1 1 1)Alperovich, V.L. et al. | 2001
- 181
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Current transport and capacitance-voltage characteristics of GaAs and InP nanometer-sized Schottky contacts formed by in situ electrochemical processSato, Taketomo et al. | 2001
- 187
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Sb adsorption on Si(1 1 1)-In(4 x 1) surface phaseRao, B.V. et al. | 2001
- 195
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Correlated surface bands of the prototypical interface Sn-Si(1 1 1)-a-Charrier, A. et al. | 2001
- 201
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Nature of the (bent radical)3a to 3 x 3 reversible phase transition at low temperature in Sn-Ge (111)Le Lay, G. et al. | 2001
- 207
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Electronic structure of carbolite filmsIonov, A.M. et al. | 2001
- 212
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Theory of surface electromigration on heterogeneous metal surfacesRous, P.J. et al. | 2001
- 218
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Adsorption and decomposition of t-butylphosphine (TBP) on a GaP(0 0 1)-(2 x 1) surface studied by LEED, HREELS, and TPDFukuda, Y. et al. | 2001
- 223
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In situ Hall measurements of Si(1 1 1)-Cr, Si(1 1 1)-Fe and Si(1 1 1)Mg disordered systems at submonolayer coveragesGalkin, N.G. et al. | 2001
- 230
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Conductivity mechanisms in the ordered surface phases and two-dimensional monosilicides of Cr and Fe on Si(1 1 1)Galkin, N.G. et al. | 2001
- 237
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Surface electronic structure of the (bent radical)3 x (bent radical)3, (bent radical)39 x (bent radical)39 and 6 x 6 surfaces of Ag-Ge(111): observation of a metal to semiconductor transitionZhang, H.M. et al. | 2001
- 243
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Photoluminescence emission (1.3-1.4 (micro)m) from quantum dots heterostructures based on GaAsEgorov, V.A. et al. | 2001
- 249
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Photoemission study of Mg-PTCDA-Se-GaAs Schottky contactsPark, S. et al. | 2001
- 255
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Conductance gap anomaly in scanning tunneling spectra of MBE-Grown (001) surfaces of III-V compound semiconductorsKasai, Seiya et al. | 2001
- 260
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Surface studies of single-crystalline refractory metal low-dimensional structuresBozhko, S.I. et al. | 2001
- 265
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Changes in electron-phonon coupling across a bulk phase transition in copolymer films of vinylidene fluoride (70%) with trifluoroethylene (30%)Borca, C.N. et al. | 2001
- 270
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Optical characterization of TiN-SiO2(1000 nm)-Si system by spectroscopic ellipsometry and reflectometryPostava, K. et al. | 2001
- 276
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Spectroellipsometric characterization of materials for multilayer coatingsPostava, K. et al. | 2001
- 281
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Interface magnetometry in a (Fe6°A-Ni24°A)10 multilayerCapelli, R. et al. | 2001
- 288
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Momentum dependence of the surface potential barrier for above-barrier electronsRead, M.N. et al. | 2001
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Characterization of hot electron transmission tunneling through the gap potential in scanning hot electron microscopyZhang, B.Y. et al. | 2001
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Transport, optical and thermoelectrical properties of Cr and Fe disilicides and their alloys on Si(1 1 1)Galkin, N.G. et al. | 2001
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LT-STM-STS observations on electrical field etched surfaces of YBa2Cu3O7 - d single crystalMurakami, Hironaru et al. | 2001
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Grain boundary diffusion in thin films under stress fieldsOstrovsky, Anatoly S. et al. | 2001
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An experimental study of poly(9,9-dioctyl-fluorene) and its interfaces with Al, LiF and CsFGreczynski, G. et al. | 2001
- 326
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Growth of organic films on passivated semiconductor surfaces: gallium arsenide versus siliconKampen, T.U. et al. | 2001
- 332
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On the coexistence of different polymorphs in organic epitaxy: a and b phase of PTCDA on Ag(1 1 1)Krause, B. et al. | 2001
- 337
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Adsorbed organic monolayers on crystalline substrate: the example of 8CB on MoS2Lacaze, E. et al. | 2001
- 344
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Photoenhanced current in thin organic layersGodlewski, J. et al. | 2001
- 351
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ToF-SIMS study of organosilane self-assembly on aluminum surfacesHoussiau, L. et al. | 2001
- 357
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XPS measurements on l-cysteine and 1-octadecanethiol self-assembled films: a comparative studyCavalleri, O. et al. | 2001
- 363
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Crystallinity of PTCDA films on silicon derived via optical spectroscopic measurementsSalvan, G. et al. | 2001
- 369
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Optical and electroemission properties of thin films of supermolecular anthracene-based rotaxanesGadret, G. et al. | 2001
- 374
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In-situ monitoring of the growth of copper phthalocyanine films on InSb by organic molecular beam depositionEvans, D.A. et al. | 2001
- 379
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Experimental evidence and computational analysis of the electronic density modulation induced by gaseous molecules at Si(001) surfaces upon self-assembling organic monolayerBollani, Monica et al. | 2001
- 386
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Ferroelectric behavior in solvent cast poly(vinylidene fluoride-hexafluoropropylene) copolymer filmsJayasuriya, Ambalangodage C. et al. | 2001
- 391
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Contact resonance imaging - a simple approach to improve the resolution of AFM for biological and polymeric materialsWadu-Mesthrige, Kapila et al. | 2001
- 399
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TOF-SIMS study of alkanethiol adsorption and ordering on goldHoussiau, L. et al. | 2001
- 407
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Electronic structures of TPD-metal interfaces studied by photoemission and Kelvin probe methodIto, Eisuke et al. | 2001
- 412
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Photoemission study of energy alignment at the metal-Alq3 interfacesYan, Li et al. | 2001
- 419
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Key issues for the growth of high quality (Al,Ga)N-GaN and GaN-(In,Ga)N heterostructures on SiC(0 0 0 1) by molecular beam epitaxyBrandt, O. et al. | 2001
- 428
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The electrical properties of MIS capacitors with ALN gate dielectricsAdam, T. et al. | 2001
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Structure and optical properties of (0 0 1)GaAs surfaces nitrided in plasma-assisted NH3 gasShimaoka, G. et al. | 2001
- 442
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Low energy electron-excited nano-luminescence spectroscopy of GaN surfaces and interfacesBrillson, L.J. et al. | 2001
- 450
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Defect depth profiling using photoluminescence and cathodoluminescence spectroscopy: the role of oxygen on reactive ion beam etching of GaN in O2-Ar plasmasHsieh, J.T. et al. | 2001
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Characterization of the density, structure and chemical states of carbon nitride filmsXu, Wentao et al. | 2001
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Excimer laser doping techniques for II-VI semiconductorsHatanaka, Y. et al. | 2001
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The electrical and optical properties of thin film diamond implanted with siliconRoe, K.J. et al. | 2001
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Photoemission properties and surface structures of homoepitaxially grown CVD diamond(1 0 0) surfacesMurakami, H. et al. | 2001
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Photo-, cathodo-, and electroluminescence studies of sputter deposited AlN:Er thin filmsDimitrova, V.I. et al. | 2001
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Low temperature deposition of SiC thin films on polymer surface by plasma CVDAnma, H. et al. | 2001
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ScN-GaN heterojunctions: fabrication and characterizationPerjeru, F. et al. | 2001
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Growth of high quality silicon carbide films on Si by triode plasma CVD using monomethylsilaneYasui, Kanji et al. | 2001
- 499
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Structure and optical properties of ScN thin filmsBai, Xuewen et al. | 2001
- 505
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The electrical characteristics of silicon carbide alloyed with germaniumKatulka, G. et al. | 2001
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Investigation of metal contacts on ScNOrtiz-Libreros, M.I. et al. | 2001
- 517
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Properties of thin MgO films grown on single-crystalline CVD diamondLee, S.M. et al. | 2001
- 525
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Microstructural properties of amorphous carbon nitride films synthesised by dc magnetron sputteringFitzgerald, A.G. et al. | 2001
- 531
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Auger electron spectroscopy, ellipsometry and photoluminescence investigations of Zn1-XBeXSe alloysBukaluk, A. et al. | 2001
- 538
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Screen printed CdSxTe1-x films, structural and optical characterizationSantana-Aranda, M.A. et al. | 2001
- 543
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Doping effects on optical properties of epitaxial ZnO layers determined by spectroscopic ellipsometryPostava, K. et al. | 2001
- 549
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XPS analysis of p-type Cu-doped CdS thin filmsAbe, Takashi et al. | 2001
- 555
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Optical characterization of chalcogenide thin filmsFranta, Daniel et al. | 2001
- 562
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Photoluminescence in cubic and hexagonal CdS filmsLozada-Morales, R. et al. | 2001
- 567
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The depth of depletion layer and the height of energy barrier on ZnO under hydrogenHan, Chong Soo et al. | 2001
- 574
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Conductimetry and impedance spectroscopy study of low pressure metal organic chemical vapor deposition TiNxOy films as a function of the growth temperature: a percolation approachFabreguette, F. et al. | 2001
- 579
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Surface films on HgCdTe and CdTe etched in ferricyanide solutionErné, B.H. et al. | 2001
- 585
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Characterization of the surface layer of GaAs nitrided by high-density plasmaYasui, Kanji et al. | 2001
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Infrared study of carbon incorporation during chemical vapor deposition of SiC using methylsilanesShinohara, Masanori et al. | 2001
- 597
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Mesoscopic phenomena in nano-porous alumina films: single nano-tunnel junctions connected to Ni-nanowires and carbon nanotubesHaruyama, Junji et al. | 2001
- 606
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Grazing incidence structural characterization of InAs quantum dots on GaAs(0 0 1)Zhang, K. et al. | 2001
- 613
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Quantum confinement effects in Si quantum well and dot structures fabricated from ultrathin silicon-on-insulator wafersTabe, Michiharu et al. | 2001
- 619
-
MBE growth of calcium and cadmium fluoride nanostructures on siliconSokolov, N.S. et al. | 2001
- 629
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Raman scattering study of Ge dot superlatticesMilekhin, A. et al. | 2001
- 636
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Nanofabrication using computer-assisted design and automated vector-scanning probe lithographyCruchon-Dupeyrat, S. et al. | 2001
- 643
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Growth of CdTe islands on ZnTe by hot-wall epitaxyKuwabara, H. et al. | 2001
- 649
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- 656
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UHV aluminium oxide on silicon substrates: electron spectroscopies analysis and electrical measurementsGruzza, B. et al. | 2001
- 663
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Unoccupied states evolution with oxidation of ultrathin Mg, Zn and Cd layers on SrTiO3(100) surfacesMøller, P.J. et al. | 2001
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Absolute determination of the stoichiometry of ultra-thin oxide films as a function of thickness: antimony oxide on goldStefanov, K.G. et al. | 2001
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MoOx (x<=2) ultrathin film growth from reactions between metallic molybdenum and TiO2 surfacesBlondeau-Patissier, V. et al. | 2001
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Structural and in depth characterization of newly designed conducting-insulating TiNxOy-TiO2 multilayers obtained by one step LP-MOCVD growthFabreguette, F. et al. | 2001
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Rheed in-plane rocking curve analysis of biaxially-textured polycrystalline MgO films on amorphous substrates grown by ion beam-assisted depositionBrewer, R.T. et al. | 2001
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Characterization of TiOx film prepared by plasma enhanced chemical vapor deposition using a multi-jet hollow cathode plasma sourceNakamura, Masatoshi et al. | 2001
- 703
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An improved three-dimensional model for growth of oxide films induced by laser heatingJiménez Pérez, J.L. et al. | 2001
- 709
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One-dimensional analytical model for oxide thin film growth on Ti metal layers during laser heating in airJiménez Pérez, J.L. et al. | 2001
- 715
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Silicon oxide in Si---Si bonded wafersHimcinschi, C. et al. | 2001
- 721
-
Ga2O3 thin film for oxygen sensor at high temperatureOgita, M. et al. | 2001
- 726
-
Ultra-thin oxides grown on silicon (1 0 0) by rapid thermal oxidation for CMOS and advanced devicesMur, P. et al. | 2001
- 734
-
Investigation of oxide growth and stability on n-GaAs and n-InP by coupling transient photocurrent and surface analysisGérard, I. et al. | 2001
- 740
-
Impedance spectroscopic analysis of forward biased metal oxide semiconductor tunnel diodes (MOSTD)Matsumura, M. et al. | 2001
- 746
-
Development of a sub-picoampere scanning tunneling microscope for oxide surfacesUmbach, Christopher C. et al. | 2001
- 753
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Amorphous silicon crystallization and polysilicon thin film transistors on SiO2 passivated steel foil substratesWu, Ming et al. | 2001
- 759
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Composition-related effects of microstructure on the ferroelectric behavior of SBT thin filmsTejedor, P. et al. | 2001
- 764
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Combined photoelectron and metastable atom electron spectroscopy study of n-doped oligophenylene thin filmsKoch, N. et al. | 2001
- 769
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On the origin of resonance features in reflectance difference data of siliconHingerl, K. et al. | 2001
- 777
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Sum rules in surface differential reflectivity and reflectance anisotropy spectroscopiesChiarotti, G. et al. | 2001
- 783
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Chemical mapping of patterned polymer photoresists by near-field infrared microscopyDragnea, Bogdan et al. | 2001
- 790
-
Auger electron spectroscopy investigations of the effect of degradation of depth resolution and its influence on the interdiffusion data in thin film Au-Ag, Cu-Ag, Pd-Au and Pd-Cu multilayer structuresBukaluk, A. et al. | 2001
- 797
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Oxygen adsorption on a Fe-MgO(1 0 0) film: a surface magnetism investigationMoroni, R. et al. | 2001
- 803
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AUTHOR INDEX| 2001
- 813
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KEYWORD INDEX| 2001
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PrefaceBernasek, S. et al. | 2001