Gettering centres in high-energy ion-implanted silicon investigated by point defect recombination (Englisch)
- Neue Suche nach: Kögler, R.
- Neue Suche nach: Kögler, R.
- Neue Suche nach: Peeva, A.
- Neue Suche nach: Werner, P.
- Neue Suche nach: Skorupa, W.
- Neue Suche nach: Gösele, U.
In:
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
;
175
, 1
; 340-344
;
2001
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Gettering centres in high-energy ion-implanted silicon investigated by point defect recombination
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Beteiligte:
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Erschienen in:
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Verlag:
- Neue Suche nach: Elsevier
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Erscheinungsort:Amsterdam [u.a.]
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Erscheinungsdatum:2001
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ISSN:
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ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 535/3450
- Neue Suche nach: 33.00
- Weitere Informationen zu Basisklassifikation
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Schlagwörter:
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Klassifikation:
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Datenquelle:
Inhaltsverzeichnis – Band 175, Ausgabe 1
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Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
-
Energy dissipation of fast heavy ions in matterSchiwietz, G. et al. | 2001
- 12
-
Production of nanodiamonds by high-energy ion irradiation of graphite at room temperatureDaulton, T.L. et al. | 2001
- 21
-
Implantation-induced disorder in amorphous Ge: Production and relaxationRidgway, M.C. et al. | 2001
- 26
-
Accumulation, dynamic annealing and thermal recovery of ion-beam-induced disorder in silicon carbideWeber, W.J. et al. | 2001
- 31
-
Chemical effects in collision cascadesNordlund, K. et al. | 2001
- 36
-
Craters produced on Al, Cu and Au by Ar cluster impactsBirtcher, R.C. et al. | 2001
- 40
-
Nanocluster formation during ion irradiation of SiO2-Ag-SiO2 multilayersBirtcher, R.C. et al. | 2001
- 46
-
Range parameters of 18O implanted into Si and SiO2de Souza, J.P. et al. | 2001
- 51
-
Irradiation-induced defect configurations in Ge substrates characterised with perturbed angular correlationGlover, C.J. et al. | 2001
- 56
-
Sputtering of high Tc superconductor YBa2Cu3O7-d by high energy heavy ionsMatsunami, Noriaki et al. | 2001
- 62
-
The study of lattice damage using slow positrons following low energy B+ implantation of siliconGwilliam, R.M. et al. | 2001
- 68
-
Ion-induced photon emission of magnesium aluminate spinel during 60 keV Cu- implantationBandourko, V. et al. | 2001
- 74
-
Effect of Ar irradiation to Xe precipitate in AlMitsuishi, K. et al. | 2001
- 78
-
Anomalous damaging behaviour of AlAs during ion implantation at 15 KWendler, E. et al. | 2001
- 83
-
In situ investigation of AlAs-GaAs interfaces during ion implantation at 15 KWendler, E. et al. | 2001
- 88
-
Track formation in KTiOPO4 by MeV implantation of light ionsWesch, W. et al. | 2001
- 93
-
Experimental energy straggling of protons in thin solid foilsEckardt, J.C. et al. | 2001
- 98
-
Random energy loss and straggling study of Li into Sida Silva, D.L. et al. | 2001
- 102
-
Simulation of topography evolution and damage formation during TEM sample preparation using focused ion beamsBoxleitner, W. et al. | 2001
- 108
-
Artificial neural network analysis of RBS data of Er-implanted sapphireBarradas, N.P. et al. | 2001
- 113
-
High energy ion range and deposited energy calculation using the Boltzmann-Fokker-Planck splitting of the Boltzmann transport equationMozolevski, I.E. et al. | 2001
- 119
-
The role of point defects in ion beam induced crystallization of silicon investigated by molecular dynamics simulationsWeber, B. et al. | 2001
- 125
-
Improved charge-state formulasSchiwietz, G. et al. | 2001
- 132
-
The effects of radiation damage and impurities on void dynamics in siliconDonnelly, S.E. et al. | 2001
- 140
-
Ion beam synthesis of undoped and Er-doped Si nanocrystalsFranz`o, G. et al. | 2001
- 148
-
Suppression of rare-earth implantation-induced damage in GaNVantomme, A. et al. | 2001
- 154
-
Efficiency of dislocations and cavities for gettering of Cu and Fe in siliconStritzker, B. et al. | 2001
- 159
-
Electrical, electronic and optical characterisation of ion beam synthesised b-FeSi2 light emitting devicesLourenço, M.A. et al. | 2001
- 164
-
The crystallisation of deep amorphous wells in silicon produced by ion implantationLiu, A.C.Y. et al. | 2001
- 169
-
The influence of ion-implantation damage on hydrogen-induced ion-cutHöchbauer, T. et al. | 2001
- 176
-
Helium implantation induced metal gettering in silicon at half of the projected ion rangePeeva, A. et al. | 2001
- 182
-
Quantitative evolution of vacancy-type defects in high-energy ion-implanted Si: Au labeling and the vacancy implanterKalyanaraman, R. et al. | 2001
- 187
-
Properties of InAs nanocrystals in silicon formed by sequential ion implantationTchebotareva, A.L. et al. | 2001
- 193
-
Self-ion-induced swelling of germaniumStritzker, B. et al. | 2001
- 197
-
Electron-induced regrowth of isolated amorphous zones in GaAsJencic, I. et al. | 2001
- 202
-
Microstructure of high-energy O and Cu ion-implanted silica glassesNakao, S. et al. | 2001
- 208
-
Correlation between Er-luminescent centers and defects in Si co-implanted with Er and ONakashima, K. et al. | 2001
- 214
-
High-dose ion implantation into GaNKucheyev, S.O. et al. | 2001
- 219
-
Compositional dependence of defect mobility and damage buildup in AlxGa1-xAsStonert, A. et al. | 2001
- 224
-
Porous silicon implanted with nitrogen by plasma immersion ion implantationBeloto, A.F. et al. | 2001
- 229
-
Reciprocal space mapping of silicon implanted with nitrogen by plasma immersion ion implantationAbramof, E. et al. | 2001
- 235
-
Electrical isolation of n-type InP by ion bombardment: Dose dependence and thermal stabilityBoudinov, H. et al. | 2001
- 241
-
Study of Fe+ implanted GaNAlves, E. et al. | 2001
- 246
-
Evaluation of free-carrier concentration in Si+-implanted InP by means of photoluminescenceIbáñez, J. et al. | 2001
- 252
-
Lattice recovery by rapid thermal annealing in Mg+-implanted InP assessed by Raman spectroscopyMarcos, B. et al. | 2001
- 257
-
Effects of the ion energy on damage production in MeV ion-implanted GaAsWesch, W. et al. | 2001
- 262
-
Emission channeling studies of implanted 167mEr in InPWahl, U. et al. | 2001
- 268
-
Optical and structural properties of 6H-SiC implanted with silicon as a function of implantation dose and temperatureHéliou, R. et al. | 2001
- 274
-
Ar-implanted epitaxially grown HgCdTe: evaluation of structural damage by RBS and TEMAguirre, M.H. et al. | 2001
- 280
-
Structural characterisation of amorphised compound semiconductorsRidgway, M.C. et al. | 2001
- 286
-
Study of the radiative and nonradiative processes of rare earth implanted semiconductors at low temperaturesKimura, T. et al. | 2001
- 292
-
Electrical characterisation of epitaxially grown n-GaN bombarded with high- and low-energy protonsAuret, F.D. et al. | 2001
- 296
-
Electronic transport in thin Cr films modified by Fe ion implantationHeck, C. et al. | 2001
- 300
-
A comparative study of vacancies produced by proton implantation of silicon using positron annihilation and deep level transient spectroscopyLourenço, M.A. et al. | 2001
- 305
-
Correlation between the depth profiles of the implantation-induced carriers and the lattice strains in high-energy implanted and annealed InPMolnar, B. et al. | 2001
- 309
-
Properties of b-FeSi2 grown by combined ion irradiation and annealing of Fe-Si bilayersMilosavljevic, M. et al. | 2001
- 314
-
The control of gold nanocluster sizes and volume fraction in dielectric thin films via ion-beam assisted depositionSchiestel, S. et al. | 2001
- 319
-
Movement of defects and atoms during ion beam induced crystallizationKinomura, A. et al. | 2001
- 324
-
Metallization of ion beam synthesized Si-3C-SiC-Si layer systems by high-dose implantation of transition metal ionsLindner, J.K.N. et al. | 2001
- 331
-
Formation of nanoclusters in Au-implanted bismuth telluriteKling, A. et al. | 2001
- 335
-
The effects of implantation temperature on He bubble formation in siliconda Silva, D.L. et al. | 2001
- 340
-
Gettering centres in high-energy ion-implanted silicon investigated by point defect recombinationKögler, R. et al. | 2001
- 345
-
Microstructural changes in silicon thermal oxide induced by high-flux copper negative-ion implantationAmekura, H. et al. | 2001
- 350
-
Anisotropic deformation of colloidal particles under MeV ion irradiationvan Dillen, T. et al. | 2001
- 357
-
Strain relaxation of pseudomorphic Si1-xGex-Si(100) heterostructures after hydrogen or helium ion implantation for virtual substrate fabricationHolländer, B. et al. | 2001
- 368
-
Ion surface treatments on organic materialsIwaki, Masaya et al. | 2001
- 375
-
Beam-induced magnetic property modifications: Basics, nanostructure fabrication and potential applicationsDevolder, T. et al. | 2001
- 382
-
Determination of solid-state sulfidation mechanisms in ion-implanted copperBarbour, J.C. et al. | 2001
- 388
-
Applications of disorder-induced melting concept to critical-solute-accumulation processesLam, N.Q. et al. | 2001
- 394
-
Defect evolution and characterization in He-implanted LiNbO3Kling, A. et al. | 2001
- 398
-
On the behaviour of enhanced mixing in metal-ceramic interfacesNagel, R. et al. | 2001
- 403
-
Modification of stainless steel and aluminium with pulsed energetic ion beams in the millisecond regimeHeyden, D. et al. | 2001
- 410
-
Influence of post-implantation thermal and laser annealing on the stability of metal-alloy nanoclusters in silicaBattaglin, G. et al. | 2001
- 417
-
Phase transformation induced in pure zirconia by high energy heavy ion irradiationBenyagoub, A. et al. | 2001
- 422
-
Photoluminescence from Si nanocrystals in silica: The effect of hydrogenCheylan, S. et al. | 2001
- 426
-
Co-irradiation effects of intense heavy ions and photons on surface modification of insulatorsKishimoto, N. et al. | 2001
- 432
-
Nucleation and growth behavior of Cu-Al precipitates in He implanted and annealed aluminumFeldmann, G. et al. | 2001
- 437
-
Degradation of polyimide by 100 keV He+, Ne+, Ar+ and Kr+ ionsHnatowicz, V. et al. | 2001
- 442
-
Germanium implantation into amorphous carbon filmsJacobsohn, L.G. et al. | 2001
- 448
-
Phase transformations in nitrogen-implanted iron layersJagielski, J. et al. | 2001
- 453
-
Lattice location of Cs atoms in cubic ZrO2 single crystalsThomé, L. et al. | 2001
- 458
-
Giant segregation effect and surface mechanical modification of aluminum alloys by oxygen plasma source ion implantationBolduc, M. et al. | 2001
- 463
-
Optical transient resonance of copper nanoparticle composites synthesized by negative ion implantationTakeda, Y. et al. | 2001
- 468
-
Formation of Ge nanowires in oxidized silicon V-grooves by ion beam synthesisMüller, T. et al. | 2001
- 474
-
High pressure annealing of defects induced by ion implantation on graphiteSoares, S.R.S. et al. | 2001
- 479
-
Magnetic properties of Co and Ni based alloy nanoparticles dispersed in a silica matrixde Julián Fernández, C. et al. | 2001
- 485
-
Solid-state reaction in Fe-V multilayers by ion beam mixing with thermal annealingBorges, J.F.M. et al. | 2001
- 490
-
Optical properties of Ir2+-implanted silica glassCheang-Wong, J.C. et al. | 2001
- 495
-
Optical absorption and emission studies of 2 MeV Cu-implanted silica glassOliver, A. et al. | 2001
- 500
-
Study of new surface structures created on sapphire by Co ion implantationMarques, C. et al. | 2001
- 505
-
Enhanced adhesion between polycarbonate substrates and tin-doped indium oxide films by ion-assisted reactionCho, Jun-Sik et al. | 2001
- 511
-
The effects of Ar post-bombardment and heat treatment on hardness of N implanted ironFoerster, C.E. et al. | 2001
- 516
-
Precursory stage of damage production in argon irradiated cubic zirconiaFradin, J. et al. | 2001
- 521
-
Grain growth in Zr-Fe multilayers under in situ ion irradiationMotta, A.T. et al. | 2001
- 526
-
Point defect energetics in the ZrNi and Zr2Ni intermetallicsMoura, C.S. et al. | 2001
- 532
-
Densification of glassy carbon by fluorine ion implantationToida, Hiroshi et al. | 2001
- 537
-
Ti:sapphire formation via the co-implantation of Ti and O ions into sapphireMorpeth, L.D. et al. | 2001
- 542
-
Hydrophilic group formation and cell culturing on polystyrene Petri-dish modified by ion-assisted reactionKim, Ki-Hwan et al. | 2001
- 548
-
Metallic nanoparticles formed in polyimide by ion implantationKobayashi, Tomohiro et al. | 2001
- 554
-
Carbon diffusion and nanocrystalline diamond formation in carbon ion-implanted oxides studied by nuclear elastic scatteringOrwa, J.O. et al. | 2001
- 559
-
Memory effect on ion beam-induced depolymerization of PMMACompagnini, G. et al. | 2001
- 564
-
Filters with <100 nm radius pores for gas separation formed by high-energy ion irradiation of polymersSudowe, R. et al. | 2001
- 569
-
Heteroepitaxial SiC films grown in Si by CH4 plasma immersion ion implantation: Conditions and mechanisms of their formationVolz, K. et al. | 2001
- 575
-
Pitting corrosion of aluminium coated with amorphous carbon films by argon ion beam assisted deposition at low process temperatureLensch, O. et al. | 2001
- 580
-
Annealing effects on luminescence from Ce-implanted a-Al2O3Aono, Keiko et al. | 2001
- 585
-
Temperature and angular effects on the channelled implantation of Er into Si<111>Hogg, S.M. et al. | 2001
- 590
-
Heavy-ion induced damage in fluorite nanopowderBoccanfuso, M. et al. | 2001
- 594
-
The effect of N+ ion energy on the properties of ion bombarded plasma polymer filmsRangel, Elidiane C. et al. | 2001
- 599
-
Annealing of chromium oxycarbide coatings deposited by plasma immersion ion processing (PIIP) for aluminum die castingPeters, A.M. et al. | 2001
- 605
-
Study of ion beam induced depolymerization using positron annihilation techniquesPuglisi, O. et al. | 2001
- 610
-
Damage accumulation and recovery in gold-ion-irradiated barium titanateJiang, W. et al. | 2001
- 615
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Ion irradiation-induced amorphization of two GeO2 polymorphsWang, S.X. et al. | 2001
- 620
-
Microhardness characterization of multilayers modified by ion beam mixingBlando, Eduardo et al. | 2001
- 626
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TiN structural modifications induced by bias voltage in a new dynamic controlled magnetron sputtering apparatusTentardini, E.K. et al. | 2001
- 630
-
Ion beam mixing of Ti-TiN multilayers for tribological and corrosion protectionHübler, Roberto et al. | 2001
- 637
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Physical and optical characterisation of Ge-implanted silicaDowd, A. et al. | 2001
- 641
-
Nano-scale elastic property changes of ion-implanted graphiteOgiso, Hisato et al. | 2001
- 647
-
Characterization of mechanical properties and microstructure of high-energy dual ion implanted metalsTaniguchi, S. et al. | 2001
- 652
-
Optical property changes of silica glass and sapphire induced by Cu and O implantationIkeyama, M. et al. | 2001
- 658
-
Determination of ion incidence angles in plasma immersion ion implantation by means of a hollow multi-aperture targetGalonska, M. et al. | 2001
- 663
-
Surface smoothening and compaction of silica glass under dynamic negative ion mixingOkubo, N. et al. | 2001
- 668
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Mechanical properties of He irradiated and annealed AZ-1350 JTM filmsLepienski, C.M. et al. | 2001
- 673
-
Nanoscratch testing of C60 thin films irradiated with N ionsLopes, J.M.J. et al. | 2001
- 678
-
Ion beam synthesis of gallium nitrideKench, P.J. et al. | 2001
- 683
-
Examination of the metastable and stable pitting corrosion of aluminum modified with carbon by ion beam techniquesLensch, O. et al. | 2001
- 688
-
Intrinsic residual stresses in metal films synthesized by energetic particle depositionMisra, A. et al. | 2001
- 694
-
Low energy nitrogen implantation into Si and SiO2-SiKrug, C. et al. | 2001
- 699
-
Surface modifications in diamond-like carbon films submitted to low-energy nitrogen ion bombardmentCastañeda, S.I. et al. | 2001
- 705
-
Isotope-beam modification of materials at eV energiesKrug, C. et al. | 2001
- 711
-
Layer splitting in Si by H+He ion co-implantation: Channeling effect limitation at low energyQian, C. et al. | 2001
- 715
-
High dose nitrogen and carbon shallow implantation in Si by plasma immersion ion implantationUeda, M. et al. | 2001
- 721
-
The effect of ion bombardment on the properties of TiOx films deposited by a modified ion-assisted PECVD techniqueda Cruz, Nilson C. et al. | 2001
- 726
-
Ion beam analysis of plasma nitrided Ti6Al4V-ELIJavorsky, C.S. et al. | 2001
- 732
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Surface modification of porous polymeric membranes by RF-plasma treatmentCastro Vidaurre, E.F. et al. | 2001
- 737
-
Annealing behaviour of foreign atom incorporated Co-silicides formed by MEVVA implantation into SiO2-Si and Si3N4-Si structuresZhang, Yanwen et al. | 2001
- 744
-
A role for ion implantation in quantum computingJamieson, David N. et al. | 2001
- 751
-
Carrier activation in in situ Si-doped GaAs layers fabricated by a focused Si ion beam and molecular beam epitaxy combined systemHada, Takuo et al. | 2001
- 756
-
Large area IBAD deposition of Zn-alloys in the coil coating modeWolf, G.K. et al. | 2001
- 762
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Ion beams as analytical tools in the thermal growth of ultrathin silicon oxide filmsda Rosa, E.B.O. et al. | 2001
- 767
-
Alloying of Pd into Ti by pulsed plasma beamsWerner, Z. et al. | 2001
- 772
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New compact design for an ion sourceHuck, H. et al. | 2001
- 777
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Fabrication of micromechanical structures on substrates selectively etched using a micropatterned ion-implantation methodNakano, Shizuka et al. | 2001
- 782
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Electrical and optical effects of He+ ion irradiation in InGaP-GaAs-InGaAs lasersDanilov, I. et al. | 2001
- 787
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Light element analysis using ERDA method with an ionization chamberAdded, N. et al. | 2001
- 791
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Plasma protein adsorption onto cell attachment controlled ion implanted collagenKurotobi, K. et al. | 2001
- 797
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Antimony implanted in silicon - A thin layer reference material for surface analysisEcker, K.H. et al. | 2001
- 802
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Author index| 2001
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Contents| 2001
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EditorialBehar, Moni et al. | 2001