Modulation doped InGaAsP quantum well laser emitting at 1.55 (micro)m (Englisch)
- Neue Suche nach: Choudhury, N.
- Neue Suche nach: Choudhury, N.
- Neue Suche nach: Dutta, N.K.
In:
Journal of applied physics
;
90
, 1
; 38-42
;
2001
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:Modulation doped InGaAsP quantum well laser emitting at 1.55 (micro)m
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Beteiligte:Choudhury, N. ( Autor:in ) / Dutta, N.K.
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Erschienen in:Journal of applied physics ; 90, 1 ; 38-42
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Verlag:
- Neue Suche nach: AIP
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Erscheinungsort:Melville, NY
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Erscheinungsdatum:2001
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ISSN:
-
ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 33.00 / 50.30
- Weitere Informationen zu Basisklassifikation
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Schlagwörter:
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Klassifikation:
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Datenquelle:
Inhaltsverzeichnis – Band 90, Ausgabe 1
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Modulation doped InGaAsP quantum well laser emitting at 1.55 mu mChoudhury, N. / Dutta, N.K. et al. | 2001
- 38
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Modulation doped InGaAsP quantum well laser emitting at 1.55 μmChoudhury, N. / Dutta, N. K. et al. | 2001
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Modulation doped InGaAsP quantum well laser emitting at 1.55 (micro)mChoudhury, N. et al. | 2001
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