Analysis of Si-SiGe channel pMOSFETs for deep-submicron scaling (Englisch)
- Neue Suche nach: Li, P.W.
- Neue Suche nach: Li, P.W.
- Neue Suche nach: Liao, W.M.
In:
Solid state electronics
;
46
, 1
; 39-44
;
2002
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Analysis of Si-SiGe channel pMOSFETs for deep-submicron scaling
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Beteiligte:Li, P.W. ( Autor:in ) / Liao, W.M.
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Erschienen in:Solid state electronics ; 46, 1 ; 39-44
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Verlag:
- Neue Suche nach: Elsevier
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Erscheinungsort:Amsterdam [u.a.]
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Erscheinungsdatum:2002
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ISSN:
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ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 770/3480/5670
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Schlagwörter:
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Klassifikation:
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Datenquelle:
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