Si MOSFETs - Low temperature operation of ultra-thin gate oxide sub-0.1 mm MOSFETs (Französisch)
- Neue Suche nach: Cretu, B.
- Neue Suche nach: Cretu, B.
- Neue Suche nach: Balestra, F.
- Neue Suche nach: Ghibaudo, G.
- Neue Suche nach: Guégan, G.
In:
Journal de physique / 4
;
12
, 3
; 57-60
;
2002
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Si MOSFETs - Low temperature operation of ultra-thin gate oxide sub-0.1 mm MOSFETs
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Beteiligte:
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Erschienen in:Journal de physique / 4 ; 12, 3 ; 57-60
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Verlag:
- Neue Suche nach: EDP Sciences
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Erscheinungsort:Les Ulis
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Erscheinungsdatum:2002
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ISSN:
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ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Französisch
- Neue Suche nach: 31.00 / 33.00
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 250/3400
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Schlagwörter:
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Klassifikation:
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Datenquelle:
Inhaltsverzeichnis – Band 12, Ausgabe 3
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- 3
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Alternative MOSFETs - SiGe Hetero FETs on silicon at cryogenic temperatureAniel, F. et al. | 2002
- 3
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SiGe Hetero FETs on silicon at cryogenic temperatureAniel, F. / Enciso-Aguilar, M. / Zerounian, N. / Giguerre, L. / Crozat, P. / Adde, R. / Zeuner, M. / Höck, G. / Hackbarth, T. / Herzog, H.-J. et al. | 2002
- 11
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The impact of an external body-bias on the hot-carrier degradation of Partially Depleted SOI N-MOSFETs at cryogenic temperaturesDieudonné, F. / Jomaah, J. / Raynaud, C. / Balestra, F. et al. | 2002
- 11
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Alternative MOSFETs - The impact of an external body-bias on the hot-carrier degradation of Partially Depleted SOI N-MOSFETs at cryogenic temperaturesDieudonné, F. et al. | 2002
- 15
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Degradation of hard MOS devices at low temperatureFourches, N. T. et al. | 2002
- 15
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Alternative MOSFETs - Degradation of hard MOS devices at low temperatureFourches, N.T. et al. | 2002
- 19
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Alternative MOSFETs - Temperature scaling of nanoscale silicon MOSFETsSverdlov, V. et al. | 2002
- 19
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Temperature scaling of nanoscale silicon MOSFETsSverdlov, V. / Naveh, Y. / Likharev, K. K. et al. | 2002
- 23
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Alternative MOSFETs - Low temperature operation of graded-channel SOI nMOSFETs for analog applicationsPavanello, M.A. et al. | 2002
- 23
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Low temperature operation of graded-channel SOI nMOSFETs for analog applicationsPavanello, M. A. / P.G. Der Agopian1 / Martino, J. A. / Flandre, D. et al. | 2002
- 27
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Alternative MOSFETs - New silicon devices beyond CMOSSuzuki, E. et al. | 2002
- 27
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New silicon devices beyond CMOSSuzuki, E. / Ishii, K. / Sekigawa, T. et al. | 2002
- 31
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Low temperature operation of 0.13 μm Partially-Depleted SOI nMOSFETs with floating bodyPavanello, M. A. / Martino, J. A. / Mercha, A. / Rafi, J. M. / Simoen, E. / Claeys, C. / van Meer, H. / De Meyer, K. et al. | 2002
- 31
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Alternative MOSFETs - Low temperature operation of 0.13 mm Partially-Depleted SOI nMOSFETs with floating bodyPavanello, M.A. et al. | 2002
- 37
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Low frequency noise versus temperature spectroscopy of Ge JFETs, Si JFETs and Si MOSFETsCamin, D. V. / Colombo, C. F. / Grassi, V. et al. | 2002
- 37
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Si MOSFETs - Low frequency noise versus temperature spectroscopy of Ge JFETs, Si JFETs and Si MOSFETsCamin, D.V. et al. | 2002
- 45
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Cryogenic operation of sub-30 nm nMOSFETs: Impact of device architectureBertrand, G. / Deleonibus, S. / Souil, D. / Previtali, B. / Caillat, C. / Guégan, G. / Sanquer, M. / Balestra, F. et al. | 2002
- 45
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Si MOSFETs - Cryogenic operation of sub-30 nm nMOSFETs: Impact of device architectureBertrand, G. et al. | 2002
- 51
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MOSFET modeling and parameter extraction for low temperature analog circuit designMartin, P. / Bucher, M. / Enz, C. et al. | 2002
- 51
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Si MOSFETs - MOSFET modeling and parameter extraction for low temperature analog circuit designMartin, P. et al. | 2002
- 57
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Low temperature operation of ultra-thin gate oxide sub-0.1 μm MOSFETsCretu, B. / Balestra, F. / Ghibaudo, G. / Guégan, G. et al. | 2002
- 57
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Si MOSFETs - Low temperature operation of ultra-thin gate oxide sub-0.1 mm MOSFETsCretu, B. et al. | 2002
- 61
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Si MOSFETs - Parasitic conduction in a 0.13 mm CMOS technology at low temperatureMercha, A. et al. | 2002
- 61
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Parasitic conduction in a 0.13 μm CMOS technology at low temperatureMercha, A. / Rafi, J. M. / Simoen, E. / Augendre, E. / Claeys, C. et al. | 2002
- 67
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Other Semiconductor Devices - Ge semiconductor devices for cryogenic power electronics -- IIWard, R.R. et al. | 2002
- 67
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Ge semiconductor devices for cryogenic power electronics - IIWard, R. R. / Dawson, W. J. / Kirschman, R. K. / Mueller, O. / Patterson, R. L. / Dickman, J. E. / Hammoud, A. et al. | 2002
- 71
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Temperature dependence of generation-recombination noise in ${p{-}n}$ junctionsJiménez Tejada, J. A. / Godoy, A. / Palma, A. / Cartujo, P. et al. | 2002
- 71
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Other Semiconductor Devices - Temperature dependence of generation-recombination noise in p-n junctionsJiménez Tejada, J.A. et al. | 2002
- 75
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Other Semiconductor Devices - Forming PbTe on Si-substrates for IR sensorsRudakov, V.I. et al. | 2002
- 75
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Forming PbTe on Si-substrates for IR sensorsRudakov, V. I. / Smirnov, I. M. et al. | 2002
- 79
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Semiconductor microcrystals with ultra-high sensitivity to mechanical strain at cryogenic temperaturesDruzhinin, A. / Lavitska, E. / Maryamova, I. / Palewski, T. / Kutrakov, A. et al. | 2002
- 79
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Other Semiconductor Devices - Semiconductor microcrystals with ultra-high sensitivity to mechanical strain at cryogenic temperaturesDruzhinin, A. et al. | 2002
- 85
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Si nano-devices using an electron-hole systemFujiwara, A. / Takahashi, Y. et al. | 2002
- 85
-
Emerging Devices and Phenomena - Si nano-devices using an electron-hole systemFujiwara, A. et al. | 2002
- 93
-
Mesoscopic transport characteristics of nano-scale SOI MOSFETs: Coulomb blockade and localizationOmura, Y. / Yamamoto, M. et al. | 2002
- 93
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Emerging Devices and Phenomena - Mesoscopic transport characteristics of nano-scale SOI MOSFETs: Coulomb blockade and localizationOmura, Y. et al. | 2002
- 97
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Electron transport in silicon nanostructures based on ultra-thin SOIPouydebasque, A. / Montes, L. / Zimmermann, J. / Balestra, F. / Fraboulet, D. / Mariolle, D. / Gautier, J. / Schopfer, F. / Bouchiat, V. / Saminadayar, L. et al. | 2002
- 97
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Emerging Devices and Phenomena - Electron transport in silicon nanostructures based on ultra-thin SOIPouydebasque, A. et al. | 2002
- 103
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Emerging Devices and Phenomena - Low-temperature conduction mechanisms of 3-nm-thick post-soft breakdown SiO2 filmsKomiya, K. et al. | 2002
- 103
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Low-temperature conduction mechanisms of 3-nm-thick post-soft breakdown SiO2 filmsKomiya, K. / Omura, Y. / Oka, T. / Nagahara, M. et al. | 2002
- 107
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Random telegraph noise in ultimate MOSFETs at very low temperature in the subthreshold regimeJehl, X. / Sanquer, M. / Bertrand, G. / Guégan, G. / S. Deleonibus1 et al. | 2002
- 107
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Emerging Devices and Phenomena - Random telegraph noise in ultimate MOSFETs at very low temperature in the subthre shold regimeJehl, X. et al. | 2002
- 113
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III-V Devices - A relationship between 1-f noise and DC parameters in the pHEMT at 4.2 KLucas, T. et al. | 2002
- 113
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A relationship between 1/f noise and DC parameters in the pHEMT at 4.2 KLucas, T. / Jin, Y. et al. | 2002
- 117
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III-V Devices - DC and 1-f noise characterization of cryogenically cooled pseudomorphic HEMT'sFerrante, G. et al. | 2002
- 117
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DC and 1/f noise characterization of cryogenically cooled pseudomorphic HEMT'sFerrante, G. / Principato, F. / Caddemi, A. / Donato, N. / Tuccari, G. et al. | 2002
- 121
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III-V Devices - Investigations on the low-power and low-frequency noise performance of pHEMT at 4.2 KLucas, T. et al. | 2002
- 121
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Investigations on the low-power and low-frequency noise performance of pHEMT at 4.2 KLucas, T. / Jin, Y. et al. | 2002
- 127
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Cryogenic detector systems for materials analysisHöhne, J. / Bühler, M. / Feilitzsch, F. V. / Jochum, J. / Hertrich, T. / Hollerith, C. / Huber, M. / Nicolosi, J. / Phelan, K. / Redfern, D. et al. | 2002
- 127
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Superconducting Detectors - Cryogenic detector systems for materials analysisHöhne, J. et al. | 2002
- 129
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Superconducting Detectors - New developments in textured and epitaxial NbN superconducting layers for ultimate sensors and RSFQ digital circuitsVillégier, J.-C. et al. | 2002
- 129
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New developments in textured and epitaxial NbN superconducting layers for ultimate sensors and RSFQ digital circuitsVillégier, J.-C. / Hadacek, N. / Jorel, C. / Thomassin, J.-L. / Bouchiat, V. / Faucher, M. / Febvre, P. / Rousy, A. / Lamura, G. et al. | 2002
- 133
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Superconducting Detectors - Low-Tc ramp-type Josephson junctions for SQUIDsPodt, M. et al. | 2002
- 133
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Low-Tc ramp-type Josephson junctions for SQUIDSPodt, M. / Rolink, B. G.A. / Flokstra, J. / Regalia, H. et al. | 2002
- 137
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Absolute high-Tc superconducting radiometer with electrical-substitution for X-rays measurementsKhrebtov, I. A. / Tkachenko, A. D. / Ivanov, K. V. / Nikolenko, A. D. / Pindyurin, V. F. et al. | 2002
- 137
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Superconducting Detectors - Absolute high-Tc superconducting radiometer with electrical-substitution for X-rays measurementsKhrebtov, I.A. et al. | 2002
- 141
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High-Tc superconducting microbolometer for terahertz applicationsUlysse, C. / Gaugue, A. / Adam, A. / Kreisler, A. J. / Villégier, J.-C. / Thomassin, J.-L. et al. | 2002
- 141
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Superconducting Detectors - High-Tc superconducting microbotometer for terahertz applicationsUlysse, C. et al. | 2002
- 145
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Superconducting Detectors - Tantalum superconducting tunnel junctions for photon counting detectorsJorel, C. et al. | 2002
- 145
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Tantalum superconducting tunnel junctions for photon counting detectorsJorel, C. / Feautrier, P. / Villégier, J.-C. / Benoit, A. et al. | 2002
- 149
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Superconducting Detectors - Interaction of super high frequency radiation with superconducting Bi(Pb)-Sr-Ca-Cu-O thin-film structuresBondar, V.D. et al. | 2002
- 149
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Interaction of super high frequency radiation with superconducting Bi(Pb)-Sr-Ca-Cu-O thin-film structuresBondar, V. D. / Vasyliv, M. Ya. / Davydov, V. M. / Lutsiv, R. V. / Pustylnik, O. D. / Khymenko, O. A. et al. | 2002
- 155
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RSFQ: The fastest digital technologyLikharev, K. K. et al. | 2002
- 155
-
Superconducting Devices and Circuits - RSFQ: The fastest digital technologyLikharev, K.K. et al. | 2002
- 157
-
Superconducting Devices and Circuits - A 20-GHz FLUX-1 superconductor RSFQ microprocessorDorojevets, M. et al. | 2002
- 157
-
A 20-GHz FLUX-1 superconductor RSFQ microprocessorDorojevets, M. et al. | 2002
- 161
-
Superconducting Devices and Circuits - Design and characterization of 225-370 GHz DSB and 247-360 GHz SSB full height waveguide SIS mixersLazareff, B. et al. | 2002
- 161
-
Design and characterization of 225-370 GHz DSB and 247-360 GHz SSB full height waveguide SIS mixersLazareff, B. / Billon-Pierron, D. / Navarrini, A. / Péron, I. et al. | 2002
- 165
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Non-linear two-frequency analysis of SIS mixers through harmonic balanceWithington, S. / Kittara, P. / Yassin, G. et al. | 2002
- 165
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Superconducting Devices and Circuits - Non-linear two-frequency analysis of SIS mixers through harmonic balanceWithington, S. et al. | 2002
- 169
-
Investigation of radiation hardness of SIS junctions for space borne radio astronomyPéron, I. / Faury, G. / Delorme, Y. / Dauplay, F. / Lecomte, B. / Salez, M. / Schuster, K.-F. et al. | 2002
- 169
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Superconducting Devices and Circuits - Investigation of radiation hardness of SIS junctions for space home radio astronomyPéron, I. et al. | 2002
- 175
-
Superconducting Materials - Study of the low frequency noise from 77 K to 300 K in NbN semiconductor thin films deposited on siliconLeroy, G. et al. | 2002
- 175
-
Study of the low frequency noise from 77 K to 300 K in NbN semiconductor thin films deposited on siliconLeroy, G. / Gest, J. / Tabourier, P. / Carru, J.-C. / Xavier, P. / E. André1 / Chaussy, J. et al. | 2002
- 179
-
Integrated niobium thin film air bridges as variable capacitors for GHz tuning circuitsSchicke, M. / Schuster, K.-F. et al. | 2002
- 179
-
Superconducting Materials - Integrated niobium thin film air bridges as variable capacitors for GHz tuning circuitsSchicke, M. et al. | 2002
- 183
-
Superconducting Materials - Low frequency noise in YBaCuO superconducting thin films deposited on MgOLeroy, G. et al. | 2002
- 183
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Low frequency noise in YBaCuO superconducting thin films deposited on MgOLeroy, G. / Gest, J. / Tabourier, P. / Carru, J.-C. / Dégardin, A. F. / Kreisler, A. J. et al. | 2002
- 187
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Complete microwave characterization at 36 GHz of YBaCuO thin films deposited on MgO substrates. Influence of the substrate preparationAchani, M. / Bourzgui, N. / Carru, J.-C. / Dégardin, A. F. / A. Gensbittel1 / Kreisler, A. J. et al. | 2002
- 187
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Superconducting Materials - Complete microwave characterization at 36 GHz of YBaCuO thin films deposited on MgO substrates. Influence of the substrate preparationAchani, M. et al. | 2002
- 193
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Superconducting cameras for optical astronomyMartin, D. D.E. / P.Verhoeve / de Bruijne, J. H.J. / Reynolds, A. P. / Van Dordrecht, A. / Verveer, J. / Page, J. / Rando, N. / Peacock, A. et al. | 2002
- 193
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Low Temperature Electronics for Space Applications - Superconducting cameras for optical astronomyMartin, D.D.E. et al. | 2002
- 203
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A 4.2 K readout channel in a standard 0.7 μm CMOS process for a photoconductor array cameraCreten, Y. / Charlier, O. / Merken, P. / Putzeys, J. / Van Hoof, C. et al. | 2002
- 203
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Low Temperature Electronics for Space Applications - A 4.2 K readout channel in a standard 0.7 mm CMOS process for a photoconductor array cameraCreten, Y. et al. | 2002
- 207
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Electronics for deep space cryogenic applicationsPatterson, R. L. / Hammoud, A. / Dickman, J. E. / Gerber, S. / Elbuluk, M. / Overton, E. et al. | 2002
- 207
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Low Temperature Electronics for Space Applications - Electronics for deep space cryogenic applicationsPatterson, R.L. et al. | 2002
- 211
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Demonstration of an 4.2 K analog switch matrix in a standard 0.7 μ CMOS processCreten, Y. / De Hert, J. / Charliert, O. / Merken, P. / Putzeys, J. / Van Hoof, C. et al. | 2002
- 211
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Low Temperature Electronics for Space Applications - Demonstration of an 4.2 K analog switch matrix in a standard 0.7 m CMOS processCreten, Y. et al. | 2002
- 215
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Index| 2002