BRIEFS - Noise Margin and Leakage in Ultra-Low Leakage SRAM Cell Design (Englisch)
- Neue Suche nach: Hook, T.B.
- Neue Suche nach: Hook, T.B.
- Neue Suche nach: Breitwisch, M.
- Neue Suche nach: Brown, J.
- Neue Suche nach: Cottrell, P.
- Neue Suche nach: Hoyniak, D.
- Neue Suche nach: Lam, C.
- Neue Suche nach: Mann, R.
In:
IEEE transactions on electron devices
;
49
, 8
; 1499-1501
;
2002
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:BRIEFS - Noise Margin and Leakage in Ultra-Low Leakage SRAM Cell Design
-
Beteiligte:Hook, T.B. ( Autor:in ) / Breitwisch, M. / Brown, J. / Cottrell, P. / Hoyniak, D. / Lam, C. / Mann, R.
-
Erschienen in:IEEE transactions on electron devices ; 49, 8 ; 1499-1501
-
Verlag:
- Neue Suche nach: IEEE
-
Erscheinungsort:New York, NY
-
Erscheinungsdatum:2002
-
ISSN:
-
ZDBID:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Print
-
Sprache:Englisch
- Neue Suche nach: 53.50 / 53.00 / 52.50 / 54.20
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 770/5670
-
Schlagwörter:
-
Klassifikation:
-
Datenquelle:
Inhaltsverzeichnis – Band 49, Ausgabe 8
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1329
-
Compound Semiconductor Devices - Significant Operating Voltage Reduction on High-Speed GaAs-Based Heterojunction Bipolar Transistors Using a Low Band Gap InGaAsN Base LayerMonier, C. et al. | 2002
- 1329
-
Significant operating voltage reduction on high-speed GaAs-based heterojunction bipolar transistors using a low band gap InGaAsN base layerMonier, C. / Baca, A.G. / Ping-Chih Chang, / Newman, F.D. / Li, N.Y. / Sun, S.Z. / Armour, E. / Hou, H.Q. et al. | 2002
- 1336
-
Compound Semiconductor Devices - A Three-Valued D-Flip-Flop and Shift Register Using Multiple-Junction Surface Tunnel TransistorsUemura, T. et al. | 2002
- 1336
-
A three-valued D-flip-flop and shift register using multiple-junction surface tunnel transistorsUemura, T. / Baba, T. et al. | 2002
- 1341
-
Molecular Electronics and Quantum Devices - InAs-GaAs Quantum Dot Infrared Photodetector (QDIP) With Double Al0.3Ga0.7As Blocking BarriersTang, S.-F. et al. | 2002
- 1341
-
InAs/GaAs quantum dot infrared photodetector (QDIP) with double Al/sub 0.3/Ga/sub 0.7/As blocking barriersShiang-Feng Tang, / Shih-Yen Lin, / Si-Chen Lee, et al. | 2002
- 1348
-
Optoelectronics, Displays, and Imaging - Contrast-Enhancement in Black Dielectric Electroluminescent DevicesHeikenfeld, J. et al. | 2002
- 1348
-
Contrast-enhancement in black dielectric electroluminescent devicesHeikenfeld, J. / Steckl, A.J. et al. | 2002
- 1353
-
Optoelectronics, Displays, and Imaging - Surface-Free Technology by Laser Annealing (SUFTLA) and Its Application to Poly-Si TFT-LCDs on Plastic Film With Integrated DriversInoue, S. et al. | 2002
- 1353
-
Surface-free technology by laser annealing (SUFTLA) and its application to poly-Si TFT-LCDs on plastic film with integrated driversInoue, S. / Utsunomiya, S. / Saeki, T. / Shimoda, T. et al. | 2002
- 1361
-
Optoelectronics, Displays, and Imaging - InGaN-GaN Light Emitting Diodes With a p-Down StructureSu, Y.K. et al. | 2002
- 1361
-
InGaN/GaN light emitting diodes with a p-down structureSu, Y.K. / Chang, S.J. / Chih-Hsin Ko, / Chen, J.F. / Ta-Ming Kuan, / Wen How Lan, / Wen-Jen Lin, / Ya-Tung Cherng, / Webb, J. et al. | 2002
- 1367
-
Reliability - Micro breakdown in Small-Area Ultrathin Gate OxidesCellere, G. et al. | 2002
- 1367
-
Micro breakdown in small-area ultrathin gate oxidesCellere, G. / Larcher, L. / Valentini, M.G. / Paccagnella, A. et al. | 2002
- 1375
-
A thermal design methodology for multifinger bipolar transistor structuresWalkey, D.J. / Celo, D. / Smy, T.J. / Surridge, R.K. et al. | 2002
- 1375
-
Silicon Devices - A Thermal Design Methodology for Multifinger Bipolar Transistor StructuresWalkey, D.J. et al. | 2002
- 1384
-
Silicon Devices - The Effects of Grain Boundaries in the Electrical Characteristics of Large Grain Polycrystalline Thin-Film TransistorsChan, V.W.C. et al. | 2002
- 1384
-
The effects of grain boundaries in the electrical characteristics of large grain polycrystalline thin-film transistorsChan, V.W.C. / Chan, P.C.H. / Chunshan Yin, et al. | 2002
- 1392
-
Nonvolatile Si quantum memory with self-aligned doubly-stacked dotsOhba, R. / Sugiyama, N. / Uchida, K. / Koga, J. / Toriumi, A. et al. | 2002
- 1392
-
Silicon Devices - Nonvolatile Si Quantum Memory With Self-Aligned Doubly-Stacked DotsOhba, R. et al. | 2002
- 1399
-
An empirical model to determine the grain size of metal-induced lateral crystallized filmChan, V.W.C. / Chan, P.C.H. et al. | 2002
- 1399
-
Silicon Devices - An Empirical Model to Determine the Grain Size of Metal-Induced Lateral Crystallized FilmChan, V.W.C. et al. | 2002
- 1405
-
Improved string ribbon silicon solar cell performance by rapid thermal firing of screen-printed contactsYelundur, V. / Rohatgi, A. / Ji-Weon Jeong, / Hanoka, J.I. et al. | 2002
- 1405
-
Silicon Devices - Improved String Ribbon Silicon Solar Cell Performance by Rapid Thermal Firing of Screen-Printed ContactsYelundur, V. et al. | 2002
- 1411
-
FinFET design considerations based on 3-D simulation and analytical modelingPei, G. / Kedzierski, J. / Oldiges, P. / Ieong, M. / Kan, E.C.-C. et al. | 2002
- 1411
-
Silicon Devices - FinFET Design Considerations Based on 3-D Simulation and Analytical ModelingPei, G. et al. | 2002
- 1420
-
Silicon Devices - Two-Dimensional Self-Consistent Simulation of a Triangular P-Channel SOI Nano-Flash Memory DeviceTang, X. et al. | 2002
- 1420
-
Two-dimensional self-consistent simulation of a triangular p-channel SOI nano-flash memory deviceXiaohui Tang, / Baie, X. / Colinge, J.-P. / Gustin, C. / Bayot, V. et al. | 2002
- 1427
-
Silicon Devices - A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS CapacitorsPalestri, P. et al. | 2002
- 1427
-
A comparative analysis of substrate current generation mechanisms in tunneling MOS capacitorsPalestri, P. / Serra, A.D. / Selmi, L. / Pavesi, M. / Rigolli, P.L. / Abramo, A. / Widdershoven, F. / Sangiorgi, E. et al. | 2002
- 1436
-
Silicon Devices - Application of Silicon-Germanium in the Fabrication of Ultra-shallow Extension Junctions for Sub- 100 nm PMOSFETsRanade, P. et al. | 2002
- 1436
-
Application of silicon-germanium in the fabrication of ultra-shallow extension junctions for sub-100 nm PMOSFETsRanade, P. / Takeuchi, H. / Wen-Chin Lee, / Subramanian, V. / Tsu-Jae King, et al. | 2002
- 1444
-
Solid-State Device Phenomena - Analysis and Design of Distributed ESD Protection Circuits for High-Speed Mixed-Signal and RFICsIto, C. et al. | 2002
- 1444
-
Analysis and design of distributed ESD protection circuits for high-speed mixed-signal and RF ICsIto, C. / Banerjee, K. / Dutton, R.W. et al. | 2002
- 1455
-
Determination of material parameters from regions close to the collector using electron beam-induced currentWu, D. / Ong, V.K.S. et al. | 2002
- 1455
-
Solid-State Device Phenomena - Determination of Material Parameters From Regions Close to the Collector Using Electron Beam-Induced CurrentWu, D. et al. | 2002
- 1462
-
Solid-State Power and High Voltage - A High-Density Low On-Resistance Trench Lateral Power MOSFET With a Trench Bottom Source ContactFujishima, N. et al. | 2002
- 1462
-
A high-density low on-resistance trench lateral power MOSFET with a trench bottom source contactFujishima, N. / Sugi, A. / Kajiwara, S. / Matsubara, K. / Nagayasu, Y. / Salama, C.A.T. et al. | 2002
- 1469
-
Vacuum Electron Devices - Gyrotron-Traveling Wave-Tube Circuits Based on Lossy CeramicsCalame, J.P. et al. | 2002
- 1469
-
Gyrotron-traveling wave-tube circuits based on lossy ceramicsCalame, J.P. / Garven, M. / Danly, B.G. / Levush, B. / Nguyen, K.T. et al. | 2002
- 1478
-
Vacuum Electron Devices - A Micromachined Vacuum Triode Using a Carbon Nanotube Cold CathodeBower, C. et al. | 2002
- 1478
-
A micromachined vacuum triode using a carbon nanotube cold cathodeBower, C. / Shalom, D. / Wei Zhu, / Lopez, D. / Kochanski, G.P. / Gammel, P.L. / Sungho Jin, et al. | 2002
- 1484
-
BRIEFS - Channel Noise Modeling of Deep Submicron MOSFETsChen, C.-H. et al. | 2002
- 1484
-
Channel noise modeling of deep submicron MOSFETsChih-Hung Chen, / Deen, M.J. et al. | 2002
- 1488
-
BRIEFS - The Study of Threshold Voltage Extraction of Nitride Spacer NMOS Transistors in Early Stage Hot Carrier StressTsai, J.-L. et al. | 2002
- 1488
-
The study of threshold voltage extraction of nitride spacer NMOS transistors in early stage hot carrier stressJun-Lin Tsai, / Kai-Ye Huang, / Jinn-Horng Lai, / Jeng Gong, / Fu-Jei Yang, / Sun-Yun Lin, et al. | 2002
- 1490
-
BRIEFS - Reduction of Off-Current in Self-Aligned Double-Gate TFT With Mask-Free Symmetric LDDZhang, S. et al. | 2002
- 1490
-
Reduction of off-current in self-aligned double-gate TFT with mask-free symmetric LDDShengdong Zhang, / Ruqi Han, / Sin, J.K.O. / Mansun Chan, et al. | 2002
- 1493
-
A simple technique to determine barrier height change in gate oxide caused by electrical stressChen, T.P. et al. | 2002
- 1493
-
BRIEFS - A Simple Technique to Determine Barrier Height Change in Gate Oxide Caused by Electrical StressChen, T.P. et al. | 2002
- 1496
-
BRIEFS - Determination of Channel Temperature in AlGaN-GaN HEMTs Grown on Sapphire and Silicon Substrates Using DC Characterization MethodKuzmik, J. et al. | 2002
- 1496
-
Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization methodKuzmik, J. / Javorka, R. / Alam, A. / Marso, M. / Heuken, M. / Kordos, P. et al. | 2002
- 1499
-
BRIEFS - Noise Margin and Leakage in Ultra-Low Leakage SRAM Cell DesignHook, T.B. et al. | 2002
- 1499
-
Noise margin and leakage in ultra-low leakage SRAM cell designHook, T.B. / Breitwisch, M. / Brown, J. / Cottrell, P. / Hoyniak, D. / Chung Lam, / Mann, R. et al. | 2002
- 1502
-
ANNOUNCEMENTS - Call for Papers -- Joint Special Issue on Nanoelectronics| 2002
- 1503
-
ANNOUNCEMENTS - Call for Papers -- IEEE International Conference on Microelectronic Test Structures| 2002
- 1504
-
ANNOUNCEMENTS - 12th International Conference on Solid-State Sensors and Actuators| 2002