A resonance photoionization sputtered neutral mass spectrometry instrument for submicron microarea analysis of ULSI devices (Englisch)
- Neue Suche nach: Shichi, H.
- Neue Suche nach: Shichi, H.
- Neue Suche nach: Osabe, S.
- Neue Suche nach: Sugaya, M.
- Neue Suche nach: Ino, T.
- Neue Suche nach: Kakibayashi, H.
- Neue Suche nach: Kanehori, K.
- Neue Suche nach: Mitsui, Y.
In:
Applied surface science
;
203
; 228-234
;
2003
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:A resonance photoionization sputtered neutral mass spectrometry instrument for submicron microarea analysis of ULSI devices
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Beteiligte:Shichi, H. ( Autor:in ) / Osabe, S. / Sugaya, M. / Ino, T. / Kakibayashi, H. / Kanehori, K. / Mitsui, Y.
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Erschienen in:Applied surface science ; 203 ; 228-234
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Verlag:
- Neue Suche nach: Elsevier
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Erscheinungsort:Amsterdam [u.a.]
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Erscheinungsdatum:2003
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ISSN:
-
ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 52.78 / 35.18 / 33.68
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 535/3485
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Schlagwörter:
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Klassifikation:
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Datenquelle:
Inhaltsverzeichnis – Band 203
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Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
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ForewordBenninghoven, A et al. | 2002
- 3
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PrefaceNihei, Yoshimasa et al. | 2002
- 5
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Depth profiling using ultra-low-energy secondary ion mass spectrometryDowsett, M.G. et al. | 2002
- 13
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Prospects for imaging TOF-SIMS: from fundamentals to biotechnologyWinograd, N. et al. | 2002
- 20
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Apparent and real transient effects in SIMS depth profiling using oxygen bombardmentWittmaack, K. et al. | 2002
- 27
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The dose dependence of Si sputtering with low energy ions in shallow depth profilingMoon, D.W. / Lee, H.I. et al. | 2002
- 30
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On the correlation between Si+ yields and surface oxygen concentration using in situ SIMS-LEISJanssens, T / Huyghebaert, C / Vandervorst, W / Gildenpfennig, A / Brongersma, H.H et al. | 2002
- 35
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Oxygen-ion-induced ripple formation on silicon: evidence for phase separation and tentative modelHomma, Y. / Takano, A. / Higashi, Y. et al. | 2002
- 39
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Doubly versus singly positively charged oxygen ions back-scattered from a silicon surface under dynamic O2+ bombardmentFranzreb, Klaus / Williams, Peter / Lörinčı́k, Jan / Šroubek, Zdeněk et al. | 2002
- 43
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Surface roughening of silicon under ultra-low-energy cesium bombardmentKataoka, Y. / Yamazaki, K. / Shigeno, M. / Tada, Y. / Wittmaack, K. et al. | 2002
- 48
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Ionization probability of atoms and molecules sputtered from a cesium covered silver surfaceMeyer, S. / Staudt, C. / Wucher, A. et al. | 2002
- 52
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Quantitative depth profiling at silicon/silicon oxide interfaces by means of Cs+ sputtering in negative mode by ToF-SIMS: a full spectrum approachFerrari, S. / Perego, M. / Fanciulli, M. et al. | 2002
- 56
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Transient sputter yields, build-up of the altered layer and Ge-segregation as a function of the O2+ ion-fluence in SiGeHuyghebaert, C. / Brijs, B. / Janssens, T. / Vandervorst, W. et al. | 2002
- 62
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Simulation of oxide sputtering and SIMS depth profiling of delta-doped layerYamamura, Y. / Ishida, M. et al. | 2002
- 69
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Big molecule ejection—SIMS vs. MALDIGarrison, B.J. / Delcorte, A. / Zhigilei, L.V. / Itina, T.E. / Krantzman, K.D. / Yingling, Y.G. / McQuaw, C.M. / Smiley, E.J. / Winograd, N. et al. | 2002
- 72
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Investigation of the depth range through ultra-thin carbon films on magnetic layers by time-of-flight secondary ion mass spectrometryTadokoro, N / Yuki, M / Osakabe, K et al. | 2002
- 78
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Ionization probability of sputtered cluster anions: Cn− and Sin−Gnaser, Hubert et al. | 2002
- 82
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Dynamic behavior of sputtering of implanted projectiles and target atoms under high fluence gallium ion bombardmentOhya, K. et al. | 2002
- 86
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Electron transfer in ion interactions with chlorine covered silver surfacesStaicu-Casagrande, E.M. / Guillemot, L. / Lacombe, S. / Esaulov, V.A. et al. | 2002
- 90
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Towards a model for the formation of positive Si+ ionsJanssens, T. / Huyghebaert, C. / Vandervorst, W. et al. | 2002
- 94
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Work function change caused by alkali ion sputteringVillegas, A. / Kudriavtsev, Yu. / Godines, A. / Asomoza, R. et al. | 2002
- 98
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Mass-resolved low-energy back-scattering of alkali ionsFranzreb, Klaus / Williams, Peter et al. | 2002
- 102
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Mechanism of metal cationization in organic SIMSWojciechowski, I / Delcorte, A / Gonze, X / Bertrand, P et al. | 2002
- 106
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The formation of singly and doubly cationized oligomers in SIMSDelcorte, A. / Wojciechowski, I. / Gonze, X. / Garrison, B.J. / Bertrand, P. et al. | 2002
- 110
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Nanocrystals depth profiling by means of Cs+ in negative polarity with dual beam ToF-SIMSPerego, M. / Ferrari, S. / Spiga, S. / Fanciulli, M. et al. | 2002
- 114
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Investigation of the cluster ion formation process for inorganic compounds in static SIMSAubriet, Frédéric / Poleunis, Claude / Bertrand, Patrick et al. | 2002
- 118
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The unimolecular decay of Aln± and Sin± sputtered clustersDzhemilev, N.Kh. / Bekkerman, A.D. / Maksimov, S.E. / Tugushev, V.I. et al. | 2002
- 118
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The unimolecular decay of Aln(plus-minus) and Sin(plus-minus) sputtered clustersDzhemilev, N.Kh et al. | 2003
- 122
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Features of non-additive sputtering for various “molecular projectile–solid” systemsBelykh, S.F. / Kovarsky, A.P. / Palitsin, V.V. / Adriaens, A. / Adams, F. et al. | 2002
- 126
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Effect of the projectile parameters on the charge state formation process in solid sputteringBelykh, S.F. / Palitsin, V.V. / Adriaens, A. / Adams, F. et al. | 2002
- 130
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The energy spectra of secondary ions sputtered from Si and SiGe by ultra-low-energy primary ionsBellingham, J. / Dowsett, M.G. et al. | 2002
- 134
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Ionization probability changes of the Si+ ions during the transient for 3 keV O2+ bombardment of SiHuyghebaert, C. / Janssens, T. / Brijs, B. / Vandervorst, W. et al. | 2002
- 139
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Simulation of SiO2 build-up in silicon under oxygen bombardmentGuzmán, B. / Serrano, J.J. / Blanco, J.M. / Aguilar, M. / Ameziane, O. et al. | 2002
- 143
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MD simulation of cluster ejection due to sputtering by polyatomic projectilesMuramoto, T / Yamamura, Y et al. | 2002
- 148
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Enhancement of cluster yield under gold dimer oblique bombardment of the silicon surfaceMedvedeva, M. / Wojciechowski, I. / Garrison, B.J. et al. | 2002
- 152
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Observation of ripple formation on O2+-irradiated GaN surfaces using atomic force microscopyKanazawa, M. / Takano, A. / Higashi, Y. / Suzuki, M. / Homma, Y. et al. | 2002
- 156
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Transient effects induced through ripple topography growth during Cs+ depth profile analysis of Si at high incidence anglesvan der Heide, P.A.W. / Lim, M.S. / Perry, S.S. / Bennett, J. et al. | 2002
- 160
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Molecular SIMS for organic layers: new insightsBertrand, P. / Delcorte, A. / Garrison, B.J. et al. | 2002
- 166
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A microscopic view of organic sample sputteringDelcorte, A. / Bertrand, P. / Garrison, B.J. et al. | 2002
- 170
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Ion-to-neutral conversion in time-of-flight secondary ion mass spectrometrySzymczak, W. / Wittmaack, K. et al. | 2002
- 175
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ToF-SIMS characterization of molecular ions from Fomblin Z-DOL on Ag substratesAbe, Yoshimi / Okuhira, Hidekazu et al. | 2002
- 180
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Effects of sample preparation on ion yield in the study of inorganic salts by s-SIMSAubriet, Frédéric / Poleunis, Claude / Bertrand, Patrick et al. | 2002
- 184
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Determination of nitrogen in silicon carbide by secondary ion mass spectrometryYa Ber, B / Kazantsev, D.Yu / Kovarsky, A.P / Yafaev, R.R et al. | 2002
- 189
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Cation Mass Spectrometer: towards an optimisation of MCsx+ cluster analysisWirtz, T / Migeon, H.-N / Scherrer, H et al. | 2002
- 194
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Nanoscale SIMS analysis: the next generation in local analysisNojima, M / Tomiyasu, B / Kanda, Y / Owari, M / Nihei, Y et al. | 2002
- 198
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Prospects for imaging with TOF-SIMS using gold liquid metal ion sourcesWalker, Amy V. / Winograd, Nicholas et al. | 2002
- 201
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Rapid screening of molecular arrays using imaging TOF-SIMSXu, J.Y. / Braun, R.M. / Winograd, N. et al. | 2002
- 205
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Development of a chemically assisted micro-beam etching system for three-dimensional microanalysisTanaka, Y / Karashima, M / Takanashi, K / Sakamoto, T / Owari, M / Nihei, Y et al. | 2002
- 209
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Secondary ion mass spectrometry using cluster primary ion beamsGillen, Greg / Fahey, Albert et al. | 2002
- 214
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Secondary ion mass spectrometry with gas cluster ion beamsToyoda, Noriaki / Matsuo, Jiro / Aoki, Takaaki / Yamada, Isao / Fenner, David B. et al. | 2002
- 219
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Development of a C60+ ion gun for static SIMS and chemical imagingWong, S.C.C. / Hill, R. / Blenkinsopp, P. / Lockyer, N.P. / Weibel, D.E. / Vickerman, J.C. et al. | 2002
- 223
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Development and experimental application of a gold liquid metal ion sourceDavies, N. / Weibel, D.E. / Blenkinsopp, P. / Lockyer, N. / Hill, R. / Vickerman, J.C. et al. | 2002
- 228
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A resonance photoionization sputtered neutral mass spectrometry instrument for submicron microarea analysis of ULSI devicesShichi, H. / Osabe, S. / Sugaya, M. / Ino, T. / Kakibayashi, H. / Kanehori, K. / Mitsui, Y. et al. | 2002
- 235
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Trace element analysis of precious metals in minerals by time-of-flight resonance ionization mass spectrometryDimov, S.S. / Chryssoulis, S.L. et al. | 2002
- 238
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Nonresonant Laser–SNMS and TOF–SIMS analysis of sub-μm structuresKollmer, F. / Bourdos, N. / Kamischke, R. / Benninghoven, A. et al. | 2002
- 238
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Nonresonant Laser-SNMS and TOF-SIMS analysis of sub-my m structuresKollmer, F. / Bourdos, N. / Kamischke, R. / Benninghoven, A. et al. | 2002
- 238
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Nonresonant Laser-SNMS and TOF-SIMS analysis of sub-mm structuresKollmer, F. / Bourdos, N. / Kamischke, R. / Benninghoven, A. et al. | 2003
- 238
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Nonresonant Laser-SNMS and TOF-SIMS analysis of sub-(micro)m structuresKollmer, F. et al. | 2003
- 244
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Estimation of useful yield in surface analysis using single photon ionisationKing, B.V / Pellin, M.J / Moore, J.F / Veryovkin, I.V / Savina, M.R / Tripa, C.E et al. | 2002
- 248
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Energy distributions and excitation probability of nickel atoms sputtered from Ni3Al, NiAl and NiTan, M / King, B.V et al. | 2002
- 252
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Steady-state surface concentration profiles of primary ion species during secondary ion mass spectrometry measurementsYoshikawa, S. / Morita, H. / Toujou, F. / Matsunaga, T. / Tsukamoto, K. et al. | 2002
- 256
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Surface roughening effect in sub-keV SIMS depth profilingLiu, R. / Ng, C.M. / Wee, A.T.S. et al. | 2002
- 260
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Correction for the loss of depth resolution with accurate depth calibration when profiling with Cs+ at angles of incidence above 50(degree) to normalKelly, J.H. et al. | 2003
- 260
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Correction for the loss of depth resolution with accurate depth calibration when profiling with Cs+ at angles of incidence above 50° to normalKelly, J.H. / Dowsett, M.G. / Augustus, P. / Beanland, R. et al. | 2002
- 264
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Accurate SIMS depth profiling for ultra-shallow implants using backside SIMSHongo, C. / Tomita, M. / Takenaka, M. / Murakoshi, A. et al. | 2002
- 268
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Detailed evaluation of the analytical resolution functionWittmaack, K. et al. | 2002
- 273
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On determining accurate positions, separations, and internal profiles for delta layersDowsett, M.G. / Kelly, J.H. / Rowlands, G. / Ormsby, T.J. / Guzmán, B. / Augustus, P. / Beanland, R. et al. | 2002
- 277
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Low energy dual beam depth profiling: influence of sputter and analysis beam parameters on profile performance using TOF-SIMSGrehl, T. / Möllers, R. / Niehuis, E. et al. | 2002
- 281
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D-SIMS and ToF-SIMS quantitative depth profiles comparison on ultra thin oxynitridesBersani, M / Giubertoni, D / Barozzi, M / EIacob, E / Vanzetti, L / Anderle, M / Lazzeri, P / Crivelli, B / Zanderigo, F et al. | 2002
- 285
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Transient processes and structural transformations in SixGe1−x layers during oxygen implantation and sputteringKrüger, D / Efremov, A.A / Murota, J / Tillack, B / Kurps, R / Romanova, G.Ph et al. | 2002
- 290
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Metal implant standards for surface analysis by TOF-SIMS and dynamic SIMS: comparison with TRIM simulationLi-Fatou, A.V. / Douglas, M. et al. | 2002
- 294
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Evaluation of SIMS depth resolution using delta-doped multilayers and mixing–roughness-information depth modelTakano, A. / Homma, Y. / Higashi, Y. / Takenaka, H. / Hayashi, S. / Goto, K. / Inoue, M. / Shimizu, R. et al. | 2002
- 298
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SIMS study of depth profiles of delta-doped boron/silicon alternating layers by low-energy ion beamsHayashi, S. / Takano, A. / Takenaka, H. / Homma, Y. et al. | 2002
- 302
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Multiple As delta layered Si thin films for SIMS quantification and depth scale calibrationCho, S.B / Shon, H.K / Kang, H.J / Hong, T.E / Kim, H.K / Lee, H.I / Kim, K.J / Moon, D.W et al. | 2002
- 306
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Transient effects noted during Cs+ depth profile analysis of Si at high incidence anglesvan der Heide, P.A.W. / Bennett, J. et al. | 2002
- 310
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Using SIMS and the NIST standard reference material #2137 to calibrate standards used in the nuclear reaction analysis of B in SiMagee, Charles W. / Jacobson, Dale C. et al. | 2002
- 310
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Using SIMS and the NIST standard reference material #2137 to calibrate standards used in the 11B(p,a)8Be nuclear reaction analysis of B in SiMagee, Charles W. et al. | 2003
- 314
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The features of using of BO2− secondary ions for SIMS depth profiling of shallow boron implantation in siliconSimakin, S.G. / Smirnov, V.K. et al. | 2002
- 318
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Six months repeatability of D-SIMS depth profile using an ultra-low-energy probeLi, Zhanping / Hoshi, Takahiro / Oiwa, Retsu et al. | 2002
- 323
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Characteristics of ultra-low-energy Cs+ ion beam bombardmentsLi, Zhanping / Hoshi, Takahiro / Oiwa, Retsu et al. | 2002
- 329
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Surprisingly large apparent profile shifts of As and Sb markers in Si bombarded with ultra-low-energy Cs ion beamsKataoka, Y / Shigeno, M / Tada, Y / Wittmaack, K et al. | 2002
- 335
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SIMS backside depth profiling of ultra shallow implantsYeo, K.L. / Wee, A.T.S. / See, A. / Liu, R. / Ng, C.M. et al. | 2002
- 339
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Dual ion beam analysis of boron implanted SiO2/silicon interfaceHayashi, S. / Yanagihara, K. et al. | 2002
- 343
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A floating low energy electron gun (FLEG) for charge compensation in SIMS and other applicationsGibbons, R. / Dowsett, M.G. / Kelly, J. / Blenkinsopp, P. / Hill, R. / Richards, D. / Loibl, N. et al. | 2002
- 348
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Comparison between Xe+ and O2+ primary ions, at low impact energy, on B delta-doping, SiGe–Si superlattice and Al/Ti multilayer structuresLaugier, F / Holliger, P / Dupuy, J.C / Baboux, N et al. | 2002
- 354
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B4C/Mo/Si and Ta2O5/Ta nanostructures analysed by ultra-low energy argon ion beamsKonarski, P. / Mierzejewska, A. et al. | 2002
- 359
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SIMS depth profiling of N and In in a ZnO single crystalPark, Dae-Chul / Sakaguchi, Isao / Ohashi, Naoki / Hishita, Shunichi / Haneda, Hajime et al. | 2002
- 363
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Determination of the variation in sputter yield in the SIMS transient region using MEISDowsett, M.G. / Ormsby, T.J. / Gard, F.S. / Al-Harthi, S.H. / Guzmán, B. / McConville, C.F. / Noakes, T.C.Q. / Bailey, P. et al. | 2002
- 367
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Investigating oxygen flooding at oblique 2 and 1 keV oxygen sputtering for microelectronics support applicationsJahnel, F. / von Criegern, R. et al. | 2002
- 371
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An (un)solvable problem in SIMS: B-interfacial profilingVandervorst, W. / Janssens, T. / Loo, R. / Caymax, M. / Peytier, I. / Lindsay, R. / Frühauf, J. / Bergmaier, A. / Dollinger, G. et al. | 2002
- 377
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Estimation of ultra-shallow implants using SIMS, NRA and chemical analysisTomita, M / Suzuki, M / Tachibe, T / Kozuka, S / Murakoshi, A et al. | 2002
- 383
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LEXES and SIMS as complementary techniques for full quantitative characterization of nanometer structuresHombourger, C. / Staub, P.F. / Schuhmacher, M. / Desse, F. / de Chambost, E. / Hitzman, C. et al. | 2002
- 387
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Copper drift in low dielectric constant insulator films caused by O2+ primary ion beamShibahara, K / Onimatsu, D / Ishikawa, Y / Oda, T / Kikkawa, T et al. | 2002
- 391
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Depth scale calibration of SIMS depth profiles by means of an online crater depth measurement techniqueDe Chambost, E. / Monsallut, P. / Rasser, B. / Schuhmacher, M. et al. | 2002
- 396
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Extremely deep SIMS profiling: oxygen in FZ siliconBarcz, A. / Zielinski, M. / Nossarzewska, E. / Lindstroem, G. et al. | 2002
- 400
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TOF-SIMS as a rapid diagnostic tool to monitor the growth mode of thin (high k) filmsConard, T. / Vandervorst, W. / Petry, J. / Zhao, C. / Besling, W. / Nohira, H. / Richard, O. et al. | 2002
- 404
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Application of SIMS in microelectronicsTsukamoto, K. / Yoshikawa, S. / Toujou, F. / Morita, H. et al. | 2002
- 409
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SIMS depth profiling of advanced gate dielectric materialsBennett, J. / Gondran, C. / Sparks, C. / Hung, P.Y. / Hou, A. et al. | 2002
- 414
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Quantitative depth profiling of SiOxNy layers on Sivan Berkum, J.G.M. / Hopstaken, M.J.P. / Snijders, J.H.M. / Tamminga, Y. / Cubaynes, F.N. et al. | 2002
- 418
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SIMS and high-resolution RBS analysis of ultrathin SiOxNy filmsKimura, K. / Nakajima, K. / Kobayashi, H. / Miwa, S. / Satori, K. et al. | 2002
- 423
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Quantitative depth profiling of nitrogen in ultrathin oxynitride film with low energy SIMSShon, H.K. / Kang, H.J. / Hong, T.E. / Chang, H.S. / Kim, K.J. / Kim, H.K. / Moon, D.W. et al. | 2002
- 427
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Solubility limits of dopants in 4H–SiCLinnarsson, M.K. / Zimmermann, U. / Wong-Leung, J. / Schöner, A. / Janson, M.S. / Jagadish, C. / Svensson, B.G. et al. | 2002
- 433
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Adventures in molecular electronics: how to attach wires to moleculesHaynie, B.C. / Walker, A.V. / Tighe, T.B. / Allara, D.L. / Winograd, N. et al. | 2002
- 437
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Gate oxide properties investigated by TOF-SIMS profiles on CMOS devicesZanderigo, F. / Brazzelli, D. / Rocca, S. / Pregnolato, A. / Grossi, A. / Queirolo, G. et al. | 2002
- 441
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TOF-SIMS depth profiling of SIMONXin, Ge / Dong, Gui / Xu, Chen / Liangzhen, Cha / Brox, O. / Benninghoven, A. et al. | 2002
- 445
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TOF-SIMS study of adhesive residuals on device contact pads after wafer taping and backgrindingLazzeri, P. / Franco, G. / Garozzo, M. / Gerardi, C. / Iacob, E. / Lo Faro, A. / Privitera, A. / Vanzetti, L. / Bersani, M. et al. | 2002
- 449
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TOF-SIMS measurement of ultra-thin SiO2 films prepared by the graded-etching methodShibamori, T. / Muraji, Y. / Man, N. / Karen, A. et al. | 2002
- 453
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SIMS analysis of insulating multilayer including silicon nitrideUeki, Y. / Kawashima, T. / Ishiwata, O. et al. | 2002
- 457
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SIMS quantification of low concentration of nitrogen doped in silicon crystalsFujiyama, N. / Karen, A. / Sams, D.B. / Hockett, R.S. / Shingu, K. / Inoue, N. et al. | 2002
- 461
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Round robin study of chlorine, sulfur and carbon in copper films from Taiwan SIMS usersChen, C.Y. / Ling, Y.C. / Hwang, J.F. / Lee, J.H. / Wen, M.L. / Hwang, M.C. / Lin, G.C. / Deng, R.C. et al. | 2002
- 465
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SIMS round-robin study of depth profiling of arsenic implants in siliconTomita, M. / Hasegawa, T. / Hashimoto, S. / Hayashi, S. / Homma, Y. / Kakehashi, S. / Kazama, Y. / Koezuka, K. / Kuroki, H. / Kusama, K. et al. | 2002
- 470
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Evaluation of the Cu-CMP process by TOF-SIMS and XPS: time dependence of Cu surface adsorbents and oxidation statesNishi, A. / Sado, M. / Miki, T. / Fukui, Y. et al. | 2002
- 473
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Surface chemical state analysis of electroplated Cu film under Cu-CMP process by means of TOF–SIMSMiyoshi, H. / Saito, R. / Kudo, M. et al. | 2002
- 478
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SIMS analysis of hydrogen diffusion and trapping in CVD polycrystalline diamondJomard, F. / Ballutaud, D. et al. | 2002
- 482
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Secondary ion mass spectrometry analysis of In-doped p-type GaN filmsChiou, C.Y. / Wang, C.C. / Ling, Y.C. / Chiang, C.I. et al. | 2002
- 486
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SIMS depth profiling of InGaAsN/InAlAs quantum wells on InPMaier, M. / Serries, D. / Geppert, T. / Köhler, K. / Güllich, H. / Herres, N. et al. | 2002
- 490
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The effect of Se and Zn pre-deposition on thermal diffusion of elements across the ZnSe/GaAs interface studied by SIMSGard, F.S. / Riley, J.D. / Dowsett, M.G. / Prince, K. et al. | 2002
- 495
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A correlation of TOF-SIMS and TXRF for the analysis of trace metal contamination on silicon and gallium arsenideMowat, Ian / Lindley, Pat / McCaig, Lori et al. | 2002
- 500
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Charge compensation using optical conductivity enhancement and simple analytical protocols for SIMS of resistive Si1−xGex alloy layersDowsett, M.G. / Morris, R. / Chou, Pei-Fen / Corcoran, S.F. / Kheyrandish, H. / Cooke, G.A. / Maul, J.L. / Patel, S.B. et al. | 2002
- 504
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SIMS study of oxygen in- and out-diffusion in SIMOX wafers during thermal annealing using implantationHayashi, S. / Sasaki, T. / Kawamura, K. / Matsumura, A. / Yanagihara, K. / Tanaka, K. et al. | 2002
- 508
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Characterization of ion-induced sodium migration in various kinds of silicon oxide filmsSaito, R. / Nagatomo, M. / Makino, N. / Hayashi, S. / Kudo, M. et al. | 2002
- 512
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SIMS depth profile of copper in low-k dielectrics under electron irradiation for charge compensationYamada, K. / Fujiyama, N. / Sameshima, J. / Kamoto, R. / Karen, A. et al. | 2002
- 516
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Characterization of high-k gate dielectric films using SIMSYamamoto, T. / Morita, N. / Sugiyama, N. / Karen, A. / Okuno, K. et al. | 2002
- 520
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Direct determination of p/n junction depth by the emission of matrix complex ionsAlexandrov, O.V. / Kazantsev, D.Yu. / Kovarsky, A.P. et al. | 2002
- 523
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Ion-bombardment artifact in TOF-SIMS analysis of ZrO2/SiO2/Si stacksDe Witte, H. / Conard, T. / Vandervorst, W. / Gijbels, R. et al. | 2002
- 527
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Imaging by time-of-flight secondary ion mass spectrometry of plasma patterned metal and oxide thin filmsCoullerez, G. / Baborowski, J. / Viornery, C. / Chevolot, Y. / Xanthopoulos, N. / Ledermann, N. / Muralt, P. / Setter, N. / Mathieu, H.J. et al. | 2002
- 532
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ToF-SIMS quantitative approaches in copolymers and polymer blendsWeng, L.T. / Chan, C.-M. et al. | 2002
- 538
-
Analysis of surface composition of isotopic polymer blend based on time-of-flight secondary ion mass spectroscopyTakahara, A. / Kawaguchi, D. / Tanaka, K. / Tozu, M. / Hoshi, T. / Kajiyama, T. et al. | 2002
- 541
-
TOF-SIMS characterization of industrial materials: from silicon wafer to polymerKaren, Akiya / Man, Naoki / Shibamori, Takahiro / Takahashi, Kumiko et al. | 2002
- 547
-
Characterization of polymer solar cells by TOF-SIMS depth profilingBulle-Lieuwma, C.W.T. / van Gennip, W.J.H. / van Duren, J.K.J. / Jonkheijm, P. / Janssen, R.A.J. / Niemantsverdriet, J.W. et al. | 2002
- 551
-
G-SIMS of crystallisable organicsGilmore, I.S / Seah, M.P et al. | 2002
- 556
-
Surface evolution of polycarbonate/polyethylene terephthalate blends induced by thermal treatmentsLicciardello, A. / Auditore, A. / Samperi, F. / Puglisi, C. et al. | 2002
- 561
-
The influence of primary ion bombardment conditions on the secondary ion emission behavior of polymer additivesKersting, R. / Hagenhoff, B. / Pijpers, P. / Verlaek, R. et al. | 2002
- 566
-
Quantitative analysis of styrene butadiene copolymers using S-SIMS and LA-FTICRMSRuch, D. / Boes, C. / Zimmer, R. / Muller, J.F. / Migeon, H.-N. et al. | 2002
- 571
-
Antioxidant segregation and crystallisation at polyester surfaces studied by ToF-SIMSMédard, N. / Benninghoven, A. / Rading, D. / Licciardello, A. / Auditore, A. / Duc, Tran Minh / Montigaud, H. / Vernerey, F. / Poleunis, C. / Bertrand, P. et al. | 2002
- 575
-
Time-of-flight-SIMS and XPS characterization of metal doped polymersGross, Th. / Retzko, I. / Friedrich, J. / Unger, W. et al. | 2002
- 580
-
TOF-SIMS study of organosilane adsorption on model hydroxyl terminated surfacesHoussiau, L. / Bertrand, P. et al. | 2002
- 586
-
TOF-SIMS study on the adsorption behavior of mixtures of a phosphite and a friction modifier onto ferrous materialMurase, A. / Ohmori, T. et al. | 2002
- 590
-
Characterization of lubricants for fluid dynamic bearing by TOF-SIMSToujou, F / Tsukamoto, K / Matsuoka, K et al. | 2002
- 596
-
Tribological characterisation of an organic coating by the use of ToF-SIMSBexell, U / Carlsson, P / Olsson, M et al. | 2002
- 600
-
Investigating the difficulty of eliminating flood gun damage in TOF-SIMSGilmore, I.S / Seah, M.P et al. | 2002
- 605
-
Characterization of methyl methacrylate oligomers using secondary ion mass spectrometry, APCI mass spectrometry and molecular orbital theoryTakeuchi, T. / Iwai, K. / Momoji, K. / Miyamoto, I. / Saiki, K. / Hashimoto, K. et al. | 2002
- 609
-
Elemental distribution analysis of positive electrode material for a nickel metal hydride batteryTakanashi, K. / Yoshida, M. / Sakamoto, T. / Ono, N. / Tanaka, Y. / Owari, M. / Nihei, Y. et al. | 2002
- 614
-
Imaging TOF-SIMS for the surface analysis of silver halide microcrystalsLenaerts, J. / Gijbels, R. / Van Vaeck, L. / Verlinden, G. / Geuens, I. et al. | 2002
- 620
-
Insights into ToF-SIMS analysis of dendritic macromolecules: cationization and PCA to probe their molecular weight on surfacesCoullerez, G / Lundmark, S / Malkoch, M / Magnusson, H / Malmström, E / Hult, A / Mathieu, H.J et al. | 2002
- 625
-
A study of defect structures in oxide materials by secondary ion mass spectrometryHaneda, Hajime et al. | 2002
- 630
-
Use of isotopic tracers and SIMS analysis for evaluating the oxidation behaviour of protective coatings on nickel based superalloysAlibhai, A.A. / Chater, R.J. / McPhail, D.S. / Shollock, B.A. et al. | 2002
- 634
-
Determination of proton and oxygen movements in solid oxides by the tracer gases exchange technique and secondary ion mass spectrometryHorita, Teruhisa / Yamaji, Katsuhiko / Sakai, Natsuko / Xiong, Yueping / Kato, Tohru / Yokokawa, Harumi / Kawada, Tatsuya et al. | 2002
- 639
-
Measurement of oxygen grain boundary diffusion in mullite ceramics by SIMS depth profilingFielitz, P. / Borchardt, G. / Schmücker, M. / Schneider, H. / Willich, P. et al. | 2002
- 644
-
Speciation of surface gold in pressure oxidized carbonaceous gold ores by TOF-SIMS and TOF-LIMSDimov, S.S. / Chryssoulis, S.L. / Sodhi, R.N. et al. | 2002
- 648
-
ToF-SIMS imaging of dopant diffusion in optical fibersHellsing, M. / Fokine, M. / Claesson, Å. / Nilsson, L.-E. / Margulis, W. et al. | 2002
- 652
-
Light element distribution in ZnO thin film deposited by electron cyclotron resonance assisted chemical vapor depositionSakaguchi, Isao et al. | 2002
- 656
-
SIMS analysis of multi-diffusion profiles of lanthanides in stabilized zirconiasWeber, S. / Scherrer, S. / Scherrer, H. / Kilo, M. / Taylor, M.A. / Borchardt, G. et al. | 2002
- 660
-
Low energy SIMS characterisation of ultra thin oxides on ferrous alloysRees, E.E. / McPhail, D.S. / Ryan, M.P. / Kelly, J. / Dowsett, M.G. et al. | 2002
- 665
-
Hydrogen absorption of LaNi5 after LiOD treatment and surface characterization by TOF-SIMSIzawa, Chika / Uchida, Haru-Hisa / Okuhira, Hidekazu / Nishi, Yoshitake et al. | 2002
- 669
-
Chemical characterization of combustion deposits by TOF-SIMSSjövall, P / Lausmaa, J / Tullin, C / Högberg, J et al. | 2002
- 673
-
A new shielded SIMS instrument for analysis of highly radioactive materialsRasser, B. / Desgranges, L. / Pasquet, B. et al. | 2002
- 679
-
SIMS ion microscopy as a novel, practical tool for subcellular chemical imaging in cancer researchChandra, S. et al. | 2002
- 684
-
Fine structures and ion images on fresh frozen dried ultrathin sections by transmission electron and scanning ion microscopyTakaya, K. / Okabe, M. / Sawataishi, M. / Takashima, H. / Yoshida, T. et al. | 2002