Surface Potential at as-Grown GaN(0001) MBE Layers (Englisch)
- Neue Suche nach: Kocan, M.
- Neue Suche nach: Kocan, M.
- Neue Suche nach: Rizzi, A.
- Neue Suche nach: Lüth, H.
- Neue Suche nach: Keller, S.
- Neue Suche nach: Mishra, U.K.
In:
Physica status solidi / B
;
234
, 3
; 773-777
;
2002
-
ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Surface Potential at as-Grown GaN(0001) MBE Layers
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Beteiligte:
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Erschienen in:Physica status solidi / B ; 234, 3 ; 773-777
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Verlag:
- Neue Suche nach: Wiley-VCH
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Erscheinungsort:Berlin
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Erscheinungsdatum:2002
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ISSN:
-
ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 33.60 / 33.60
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 530.41
- Weitere Informationen zu Dewey Decimal Classification
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Schlagwörter:
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Klassifikation:
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Datenquelle:
Inhaltsverzeichnis – Band 234, Ausgabe 3
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- 711
-
Papers presented at the International Workshop on Nitride Semiconductors (IWN 2002)Hoffmann, Axel et al. | 2002
- 713
-
Photoreflectance Studies of AlGaN-GaN Heterostructures Containing a Polarisation Induced 2DEGGoldhahn, R. et al. | 2002
- 717
-
AlGaN Nanocolumns and AlGaN-GaN-AlGaN Nanostructures Grown by Molecular Beam EpitaxyRistic, J. et al. | 2002
- 722
-
Spontaneous Superlattice Formation in AlGaN Layers Grown by MOCVD on Si(111)-SubstratesStrittmatter, A. et al. | 2002
- 726
-
Assessment of AlGaN Growth by Plasma Assisted MBE Using In as a SurfactantMonroy, E. et al. | 2002
- 730
-
Exciton Confinement in GaN-AlGaN Quantum Wells Enhanced by Non-Abrupt InterfacesCaetano, E.W.S. et al. | 2002
- 734
-
Modulation of Surface Barrier in AlGaN-GaN HeterostructuresKoley, G. et al. | 2002
- 738
-
In-Redistribution in a GaInN Quantum Well upon Thermal AnnealingHahn, E. et al. | 2002
- 742
-
Quantitative Analysis of Absorption and Field-Induced Absorption Changes in InGaN-GaN Quantum WellsKiesel, P. et al. | 2002
- 742
-
Quantitative analysis of absorption and field-induced adsorption changes in InGaN/GaN quantum wellsKiesel, P. / Renner, F. / Kneissl, M. / Van de Walle, C.G. / Dohler, G.H. / Johnson, N.M. et al. | 2002
- 746
-
Recombination Dynamics of Localized Excitons in Cubic Phase InxGa1-xN-GaN Multiple Quantum Wells on 3C-SiC-Si (001)Chichibu, Sf et al. | 2002
- 750
-
Optical Properties of InxGa1-xN with Entire Alloy Composition on InN Buffer Layer Grown by RF-MBEHori, M. et al. | 2002
- 755
-
Phonon-Assisted Photoluminescence in InGaN-GaN Multiple Quantum WellsPaskov, P.P. et al. | 2002
- 759
-
Pressure Coefficients of the Light Emission in Cubic InGaN Epilayers and Cubic InGaN-GaN Quantum WellsSuski, T. et al. | 2002
- 764
-
Small Built-in Electric Fields in Quaternary InAlGaN HeterostructuresTeisseyre, H. et al. | 2002
- 769
-
Modelling of Polarization Charge-Induced Asymmetry of I-V Characteristics of AlN-GaN-Based Resonant Tunnelling StructuresIndlekofer, K.M. et al. | 2002
- 769
-
Modelling of polarization charge-induced asymmetry of I-V characteristics of AlN/GaN-based resonant tunneling structuresIndlekofer, K.M. / Dona, E. / Malindretos, J. / Bertelli, M. / Kocan, M. / Rizzi, A. / Luth, H. et al. | 2002
- 773
-
Surface Potential at as-Grown GaN(0001) MBE LayersKocan, M. et al. | 2002
- 778
-
Light-Hole and Heavy-Hole Excitons: the Right Probe for the Physics of Low N Content GaAsNTaliercio, T. et al. | 2002
- 782
-
Physical Mechanisms of Photoluminescence of InGaAs(N) Alloy Films Grown by MOVPESanorpim, S. et al. | 2002
- 782
-
Physical mechanism of photoluminescence of InGaAs(N) alloy films grown by MOVPESanorpim, S. / Nakajima, F. / Imura, S. / Katayama, R. / Wu, J. / Onabe, K. / Shiraki, Y. et al. | 2002
- 787
-
Band Gap of Hexagonal InN and InGaN AlloysDavydov, V.Yu et al. | 2002
- 796
-
Growth Temperature Dependence of Indium Nitride Crystalline Quality Grown by RF-MBESaito, Y. et al. | 2002
- 801
-
Structure Analysis of InN Film Using Extended X-Ray Absorption Fine Structure MethodMiyajima, T. et al. | 2002
- 805
-
Transport Properties of 2DEGs in AlGaN-GaN Heterostructures: Spin Splitting and Occupation of Higher SubbandsLink, A. et al. | 2002
- 810
-
Experimental and Theoretical Studies of Transient Electron Velocity Overshoot in GaNWraback, M. et al. | 2002
- 817
-
Recent Progress in GaN-Based Superlattices for Near-Infrared Intersubband TransitionsNg, H.M. et al. | 2002
- 822
-
GaN-AlGaN Two-Dimensional Electron Gas Grown by Ammonia-MBE on MOCVD GaN TemplateTang, H. et al. | 2002
- 826
-
Fast and Ultrafast Processes in AlGaN-GaN ChannelsMatulionis, A. et al. | 2002
- 830
-
Relation between Microstructure and 2DEG Properties of AlGaN-GaN StructuresVan Daele, B. et al. | 2002
- 835
-
Characterization of Inductively-Coupled-Plasma Damage on n-Type GaN Using Deep-Level Transient Spectroscopy and Synchrotron Radiation Photoemission SpectroscopyChoi, Kyoung Jin et al. | 2002
- 840
-
Reduction of Planar Defect Density in Laterally Overgrown Cubic-GaN on Patterned GaAs(001) Substrates by MOVPESanorpim, S. et al. | 2002
- 845
-
Intentional Control of n-type Conduction for Si-doped AlN and AlxGa1-xN with High Al ContentTaniyasu, Y. et al. | 2002
- 850
-
Mg Incorporation in AlGaN Layers Grown on Grooved Sapphire SubstratesCherns, D. et al. | 2002
- 855
-
Growth of AlxGa1-xN and Mg-Doped GaN Epilayers on Ga- and N-Faces of Bulk GaN Single Crystal Substrates by Molecular-Beam EpitaxyKonishi, M. et al. | 2002
- 859
-
Electrical Properties of SiO2-n-GaN Metal-Insulator-Semiconductor StructuresNakano, Y. et al. | 2002
- 864
-
Carbon-Based Defects in GaN: Doping BehaviourRamos, L.E. et al. | 2002
- 868
-
Determination of Si d-Doping Concentration in GaN by ElectroreflectanceDrabinska, A. et al. | 2002
- 872
-
Hall Effect Data Analysis of GaN n+n StructuresArnaudov, B. et al. | 2002
- 877
-
Photoconductivity and Electroreflectance Study of Cubic GaN-GaAs(001) Heterostructures by Optical-Biasing TechniqueKatayama, R. et al. | 2002
- 882
-
Electronic Band Structure of Strained C- and M-Plane GaN Films Investigated by Polarized Photoreflectance SpectroscopyGhosh, S. et al. | 2002
- 887
-
Optical Characterization of AlxGa1-xN Alloys (x < 0.7) Grown on Sapphire or SiliconLeroux, M. et al. | 2002
- 892
-
Anisotropy of the In-Plane Strain in GaN Grown on A-Plane SapphirePaskov, P.P. et al. | 2002
- 897
-
Electromechanical Coupling Coefficient for Surface Acoustic Waves in GaN-on-SapphireRimeika, R. et al. | 2002
- 901
-
Coupled Free-Carrier and Exciton Dynamics in Bulk Wurtzite GaNCompagnone, F. et al. | 2002
- 906
-
k. p Calculations of Electronic and Optical Properties of p-doped (001) AlGaN-GaN Thin SuperlatticesRodrigues, S.C.P. et al. | 2002
- 911
-
Correlation of Surface Potential, Free Carrier Concentration and Light Emission in ELO GaN Growth DomainsHaboeck, U. et al. | 2002
- 915
-
Optical Properties of RF-MBE Grown AlGaAsNYamamoto, K. et al. | 2002
- 919
-
Nanometric-Scale Fluctuations of Intrinsic Electric Fields in GaN-AlGaN Quantum Wells with Inversion DomainsShubina, T.V. et al. | 2002
- 924
-
Electron Holography Studies of the Charge on Dislocations in GaNCherns, D. et al. | 2002
- 931
-
Controlling the Morphology of GaN Layers Grown on AlN in Ga Self-Surfactant Conditions: from Quantum Wells to Quantum DotsAdelmann, C. et al. | 2002
- 935
-
Origin of Inversion Domains in GaN-AlN-Si(111) Heterostructures Grown by Molecular Beam EpitaxySanchez, A.M. et al. | 2002
- 939
-
Lateral Arrangement of Self-Assembled GaN Islands on Periodically Stepped AlN SurfacesBrault, J. et al. | 2002
- 943
-
Microstructural Investigation and Magnetic Properties of p-type GaN Implanted with Mn+IonsBaik, J.M. et al. | 2002
- 947
-
Comparison of the Morphology and In Distribution of Capped and Uncapped InGaN Layers by Transmission Electron MicroscopyPotin, V. et al. | 2002
- 952
-
Migration of Dislocations in Strained GaN Heteroepitaxial LayersSahonta, S.-L. et al. | 2002
- 956
-
Phase Separation, Gap Bowing, and Structural Properties of Cubic InxAl1-xNTeles, L.K. et al. | 2002
- 961
-
Characterization of Crack-Free AlN-GaN Multiple Quantum Wells Grown by Metalorganic Vapor Phase Epitaxy Using H2 as a Carrier GasWaki, I. et al. | 2002
- 965
-
Electronic and Phonon Deformation Potentials of GaN and AlN: Ab initio Calculations versus ExperimentWagner, J.-M. et al. | 2002
- 970
-
Optical phonons in hexagonal AlxInyGa1-x-yN (y approximately=0.12)Kasic, A. / Schubert, M. / Off, J. / Scholz, F. / Einfeldt, S. / Hommel, D. et al. | 2002
- 970
-
Optical Phonons in Hexagonal AlxInyGa1-x-yN (y (app) 0.12)Kasic, A. et al. | 2002
- 975
-
Raman Spectroscopy as a Tool for Characterization of Strained Hexagonal GaN-AlxGa1-xN SuperlatticesDavydov, V.Yu et al. | 2002
-
Unconventional Magnetic Behaviour of TbB12 at Low TemperatureMurasik, A. et al. | 2002
-
Temperature Dependence of the Minority-Carrier Mobility-Lifetime Product for Probing Band-Tail States in Microcrystalline SiliconBrüggemann, R. et al. | 2002
-
Optical Properties of the Nitrogen Acceptor in Epitaxial ZnOZeuner, A. et al. | 2002
-
Interfacial Elasticity Corrections to Size-Dependent Strain-State of Embedded Quantum DotsSharma, P. et al. | 2002