Nucleation and growth of GaN observed by in situ line-of-sight mass spectrometry (Englisch)
- Neue Suche nach: Averbeck, R.
- Neue Suche nach: Averbeck, R.
- Neue Suche nach: Koblmueller, G.
- Neue Suche nach: Riechert, H.
- Neue Suche nach: Pongratz, P.
In:
Journal of crystal growth
;
251
, 1
; 505-509
;
2003
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Nucleation and growth of GaN observed by in situ line-of-sight mass spectrometry
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Beteiligte:
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Erschienen in:Journal of crystal growth ; 251, 1 ; 505-509
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Verlag:
- Neue Suche nach: Elsevier
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Erscheinungsort:Amsterdam [u.a.]
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Erscheinungsdatum:2003
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ISSN:
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ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 38.31 / 33.61 / 35.90
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 535/3475
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Schlagwörter:
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Klassifikation:
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Datenquelle:
Inhaltsverzeichnis – Band 251, Ausgabe 1
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Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
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Three decades of molecular beam epitaxyFoxon, C.T. et al. | 2002
- 9
-
Progress and prospects of advanced quantum nanostructures and roles of molecular beam epitaxySakaki, Hiroyuki et al. | 2003
- 17
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Speculations about future directionsKroemer, Herbert et al. | 2002
- 23
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Theoretical study of In desorption and segregation kinetics in MBE growth of InGaAs and InGaNStanley, Irena / Coleiny, Golshan / Venkat, Rama et al. | 2002
- 29
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A simple model for MBE growth controlled by group III atom migrationHolland, M.C. et al. | 2003
- 35
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Dynamics of spontaneous roughening on the GaAs(001)-(2x4) surfaceDing, Z. et al. | 2003
- 35
-
Dynamics of spontaneous roughening on the GaAs(001)-(2×4) surfaceDing, Z. / Bullock, D.W. / Oliver, W.F. / Thibado, P.M. / LaBella, V.P. et al. | 2002
- 40
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Desorption process of GaAs surface native oxide controlled by direct Ga-beam irradiationAsaoka, Y. et al. | 2003
- 46
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Ga-rich GaAs(001) surfaces observed by STM during high-temperature annealing in MBETsukamoto, Shiro / Pristovsek, Markus / Ohtake, Akihiro / Orr, Bradford G. / Bell, Gavin R. / Ohno, Takahisa / Koguchi, Nobuyuki et al. | 2002
- 51
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Time-resolved X-ray diffraction study on surface structure and morphology during molecular-beam epitaxy growthTakahasi, M. / Yoneda, Y. / Inoue, H. / Yamamoto, N. / Mizuki, J. et al. | 2002
- 56
-
Island and pit kinetics on the growing GaAs (001) surface studied by synchrotron X-ray diffractionBraun, Wolfgang / Jenichen, Bernd / Kaganer, Vladimir M. / Shtukenberg, Alexander S. / Däweritz, Lutz / Ploog, Klaus H. et al. | 2002
- 62
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Control of MBE surface step-edge kinetics to make an atomically smooth quantum wellYoshita, Masahiro / Oh, Ji-Won / Akiyama, Hidefumi / Pfeiffer, Loren N. / West, Ken W. et al. | 2002
- 68
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Real-time surface composition and roughness analysis in MBE using RHEED-induced X-ray fluorescenceBraun, Wolfgang / Ploog, Klaus H. et al. | 2002
- 73
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Accuracy of AlGaAs growth rates and composition determination using RHEED oscillationsHarvey, T.E / Bertness, K.A / Hickernell, R.K / Wang, C.M / Splett, J.D et al. | 2003
- 80
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V/III ratio dependence of surface migration length of As4 molecules during molecular beam epitaxy of GaAsP on (411)A GaAs substratesHiguchi, Yu / Uemura, Masaya / Masui, Yuji / Kitada, Takahiro / Shimomura, Satoshi / Hiyamizu, Satoshi et al. | 2002
- 85
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Mesoscopic island structure at GaAs/(AlGa)As interfaces grown by MBEGottwaldt, L. / Pierz, K. / Ahlers, F.J. / Göbel, E.O. / Nau, S. / Torunski, T. / Stolz, W. et al. | 2002
- 90
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Characterization of interface roughness scattering of electrons in an In0.53Ga0.47As/In0.52Al0.48As QW-HEMT structure with (411)A super-flat interfacesWatanabe, Issei / Kanzaki, Kenji / Kitada, Takahiro / Yamamoto, Masashi / Shimomura, Satoshi / Hiyamizu, Satoshi et al. | 2002
- 96
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Electronic properties of etched–regrown heterostructure interfacesBeyer, S. / Löhr, S. / Heyn, Ch. / Heitmann, D. / Hansen, W. et al. | 2002
- 101
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Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surfaceMartini, S. / Quivy, A.A. / Lamas, T.E. / da Silva, M.J. / da Silva, E.C.F. / Leite, J.R. et al. | 2002
- 106
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Kinetics of dislocation-mediated strain relaxation in InGaAs/GaAs heteroepitaxyBeresford, R. / Lynch, C. / Chason, E. et al. | 2002
- 112
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Interplay between relaxation, surface morphology and composition modulation in InAlAs graded buffer layersChauveau, Jean-Michel / Cordier, Y. / Kim, H.J. / Ferré, D. / Androussi, Y. / Persio, J.Di et al. | 2002
- 118
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Effects of noise level in fitting in situ optical reflectance spectroscopy dataFu, Chihchiang / Bertness, K.A. / Wang, C.M. et al. | 2002
- 124
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InGaAs composition monitoring for production MBE by in situ optical-based flux monitor (OFM)Pinsukanjana, Paul R. / Marquis, Jeremy M. / Hubbard, Jared / Trivedi, Mehul A. / Dickey, Roger F. / Tsai, Jerry M.-S. / Kuo, Sam P. / Kao, Philip S. / Kao, Yung-Chung et al. | 2002
- 130
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Multiwafer gas source MBE development for InGaAsP/InP laser productionLelarge, F. / Sanchez, J.J / Gaborit, F. / Gentner, J.L. et al. | 2002
- 135
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Low-temperature growth of self-assembled InAs dots on GaAs by molecular beam epitaxyZhan, H.H. / Nötzel, R. / Hamhuis, G.J. / Eijkemans, T.J. / Wolter, J.H. et al. | 2003
- 140
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Ga/In-intermixing and segregation during InAs quantum dot formationHeyn, Ch. / Hansen, W. et al. | 2002
- 145
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Influence of initial GaAs and AlAs cap layers on InAs quantum dots grown by molecular beam epitaxyFerdos, Fariba / Wang, Shumin / Wei, Yongqiang / Sadeghi, Mahdad / Zhao, Qingxiang / Larsson, Anders et al. | 2003
- 150
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Strain-driven (In,Ga)As growth instability on GaAs (311)A and (311)B: self-organization of template for InAs quantum dot nucleation controlGong, Q. / Nötzel, R. / Wolter, J.H. et al. | 2002
- 155
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Controlling the shape of InAs self-assembled quantum dots by thin GaAs capping layersTakehana, K. / Pulizzi, F. / Patanè, A. / Henini, M. / Main, P.C. / Eaves, L. / Granados, D. / Garcia, J.M. et al. | 2002
- 161
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Scanning tunneling microscopy study of GaAs overgrowth on InAs islands formed on GaAs(001)Hasegawa, Shigehiko / Suekane, Osamu / Takata, Masahiro / Nakashima, Hisao et al. | 2003
- 166
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Photoluminescence investigation of low-temperature capped self-assembled InAs/GaAs quantum dotsSongmuang, R. / Kiravittaya, S. / Sawadsaringkarn, M. / Panyakeow, S. / Schmidt, O.G. et al. | 2003
- 172
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Aluminium incorporation for growth optimization of 1.3(micro)m emission InAs-GaAs quantum dots by molecular beam epitaxyWei, Y.Q. et al. | 2003
- 172
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Aluminium incorporation for growth optimization of 1.3μm emission InAs/GaAs quantum dots by molecular beam epitaxyWei, Y.Q. / Wang, S.M. / Ferdos, F. / Vukusic, J. / Zhao, Q.X. / Sadeghi, M. / Larsson, A. et al. | 2002
- 172
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Aluminium incorporation for growth optimization of 1.3mm emission InAs/GaAs quantum dots by molecular beam epitaxyWei, Y. Q. / Wang, S. M. / Ferdos, F. / Vukusic, J. / Zhao, Q. X. / Sadeghi, M. / Larsson, A. et al. | 2003
- 177
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Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dotsXu, Z.C. / Leosson, K. / Birkedal, D. / Hvam, J.M. / Sadowski, J. / Zhao, Z.Y. / Chen, X.S. / Liu, Y.M. / Yang, K.T. et al. | 2002
- 181
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Optical response at 1.3μm and 1.5μm with InAs quantum dots embedded in a pure GaAs matrixda Silva, M.J. / Quivy, A.A. / Martini, S. / Lamas, T.E. / da Silva, E.C.F. / Leite, J.R. et al. | 2002
- 181
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Optical response at 1.3mm and 1.5mm with InAs quantum dots embedded in a pure GaAs matrixda Silva, M. J. / Quivy, A. A. / Martini, S. / Lamas, T. E. / da Silva, E. C. / Leite, J. R. et al. | 2003
- 181
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Optical response at 1.3(micro)m and 1.5(micro)m with InAs quantum dots embedded in a pure GaAs matrixda Silva, M.J. et al. | 2003
- 186
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Magneto-photoluminescence studies of the influence of substrate orientation on the growth of InAs/GaAs quantum dotsMaes, J. / Henini, M. / Hayne, M. / Patanè, A. / Pulizzi, F. / Eaves, L. / Main, P.C. / Moshchalkov, V.V. et al. | 2002
- 192
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Emission energy and polarization tuning of InAs/GaAs self-assembled quantum dots by growth interruptionOchoa, D. / Polimeni, A. / Capizzi, M. / Patané, A. / Henini, M. / Eaves, L. / Main, P.C. et al. | 2002
- 196
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Observation of blue-shifted photoluminescence in stacked InAs/GaAs quantum dotsSomintac, A. / Estacio, E. / Salvador, A. et al. | 2002
- 201
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Growth of self-assembled InAs quantum dots on Si exposed GaAs substrates by molecular beam epitaxySaucedo-Zeni, N. / Zamora-Peredo, L. / Gorbatchev, A.Yu / Lastras-Martı́nez, A. / Balderas-Navarro, R. / Medel-Ruiz, C.I. / Méndez-Garcı́a, V.H. et al. | 2002
- 208
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Characteristics of InAs “dots-in-a-graded-well”Chen, L. / Pal, D. / Towe, E. et al. | 2003
- 213
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Customized nanostructures MBE growth: from quantum dots to quantum ringsGranados, D. / Garcı́a, J.M. et al. | 2003
- 218
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Desorption of InAs quantum dotsHeyn, Ch. / Hansen, W. et al. | 2002
- 223
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Growth and temperature characteristic of self-assembled InAs-QD on GaInPAmanai, H. / Nagao, S. / Sakaki, H. et al. | 2003
- 230
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Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55μm quantum dot laserParanthoen, C. / Platz, C. / Moreau, G. / Bertru, N. / Dehaese, O. / Le Corre, A. / Miska, P. / Even, J. / Folliot, H. / Labbé, C. et al. | 2003
- 230
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Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55(micro)m quantum dot laserParanthoen, C. et al. | 2003
- 230
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Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55mm quantum dot laserParanthoen, C. / Platz, C. / Moreau, G. / Bertru, N. / Dehaese, O. / Le Corre, A. / Miska, P. / Even, J. / Folliot, H. / Labbe, C. et al. | 2003
- 236
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Study of the GaAs growth on pseudomorphic Si layers for the formation of self-assembled quantum dotsPérez-Centeno, Armando / Méndez-Garcı́a, Vı́ctor-Hugo / Zamora-Peredo, Luis / Saucedo-Zeni, Nadia / López-López, Máximo et al. | 2002
- 243
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Growth and microstructure of semimetallic ErAs particles embedded in an In0.53Ga0.47As matrixDriscoll, Daniel C. / Hanson, Micah P. / Mueller, Elisabeth / Gossard, Arthur C. et al. | 2003
- 248
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Epitaxial growth of 1.55μm emitting InAs quantum dashes on InP-based heterostructures by GS-MBE for long-wavelength laser applicationsSchwertberger, R. / Gold, D. / Reithmaier, J.P. / Forchel, A. et al. | 2002
- 248
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Epitaxial growth of 1.55(micro)m emitting InAs quantum dashes on InP-based heterostructures by GS-MBE for long-wavelength laser applicationsSchwertberger, R. et al. | 2003
- 248
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Epitaxial growth of 1.55mm emitting InAs quantum dashes on InP-based heterostructures by GS-MBE for long-wavelength laser applicationsSchwertberger, R. / Gold, D. / Reithmaier, J. P. / Forchel, A. et al. | 2003
- 253
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Molecular beam epitaxial growth studies of ordered GaAs nanodot arrays using anodic alumina masksMei, Xiangyang / Blumin, Marina / Kim, Danny / Wu, Zhanghua / Ruda, Harry E. et al. | 2002
- 258
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Self-assembled nanoholes and lateral QD bi-molecules by molecular beam epitaxy and atomically precise in situ etchingKiravittaya, S. / Songmuang, R. / Jin-Phillipp, N.Y. / Panyakeow, S. / Schmidt, O.G. et al. | 2003
- 264
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Role of In desorption for formation of self-organized (In,Ga)As quantum wires on GaAs(100) during superlattice formationMano, T. / Nötzel, R. / Hamhuis, G.J. / Eijkemans, T.J. / Wolter, J.H. et al. | 2002
- 269
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Improved uniformity of self-organized In0.53Ga0.47As/In0.52Al0.48As quantum wires grown on (775)B-oriented InP substrate by molecular beam epitaxyOhno, Yasuhide / Shimomura, Satoshi / Hiyamizu, Satoshi et al. | 2003
- 276
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Formation of nano-oxide regions in p2+-GaAs epilayers by localized atomic force microscope probe oxidation for fabrication of nano-structure devicesMatsuzaki, Yuichi / Ota, Narihisa / Yamada, Akira / Sandhu, Adarsh / Konagai, Makoto et al. | 2002
- 276
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Formation of nano-oxide regions in p2+-GaAs epilayers by localised atomic force microscope probe oxidation for fabrication of nano-structure devicesMatsuzaki, Y. / Ota, N. / Yamada, A. / Sandhu, A. / Konagai, M. et al. | 2003
- 281
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Application of multi-step formation during molecular beam epitaxy for fabricating novel nanomechanical structuresYamaguchi, Hiroshi / Hirayama, Yoshiro et al. | 2002
- 285
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Molecular beam epitaxy and properties of ferromagnetic III–V semiconductorsOhno, Hideo et al. | 2002
- 292
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Growth and properties of ferromagnet–semiconductor heterostructures for spin injection at room temperaturePloog, Klaus H. / Herfort, J. / Schönherr, H.-P. / Moreno, M. / Dhar, S. et al. | 2002
- 297
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Structural and magnetic order in MnAs films grown by molecular beam epitaxy on GaAs for spin injectionDäweritz, L. / Kästner, M. / Hesjedal, T. / Plake, T. / Jenichen, B. / Ploog, K.H. et al. | 2002
- 303
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MBE growth, structural, and transport properties of Mn d-doped GaAs LayersNazmul, Ahsan M. et al. | 2003
- 303
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MBE growth, structural, and transport properties of Mn δ-doped GaAs LayersNazmul, Ahsan M. / Sugahara, S. / Tanaka, M. et al. | 2002
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The growth of GaMnAs films by molecular beam epitaxy using arsenic dimersCampion, R.P. / Edmonds, K.W. / Zhao, L.X. / Wang, K.Y. / Foxon, C.T. / Gallagher, B.L. / Staddon, C.R. et al. | 2002
- 317
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Epitaxial growth and magnetic properties of single-crystal MnAs/AlAs/MnAs magnetic tunnel junctions on exact (111)B GaAs substrates: the effect of ultrathin GaAs buffer layersSugahara, S. / Tanaka, M. et al. | 2002
- 323
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Growth of the half-Heusler alloy NiMnSb on (In,Ga)As/InP by molecular beam epitaxyBach, Peter / Rüster, Christian / Gould, Charles / Becker, Charles R. / Schmidt, Georg / Molenkamp, Laurens W. et al. | 2002
- 327
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MBE growth and properties of GaCrNHashimoto, M. / Zhou, Y.K. / Kanamura, M. / Katayama-Yoshida, H. / Asahi, H. et al. | 2002
- 331
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MBE growth of GaMnN diluted magnetic semiconductors and its magnetic propertiesChen, P.P. / Makino, H. / Kim, J.J. / Yao, T. et al. | 2002
- 337
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Spin injection from a ferromagnetic electrode into InAs surface inversion layerYoh, Kanji / Ohno, Hiroshi / Katano, Yoshito / Mukasa, Koichi / Ramsteiner, Manfred et al. | 2003
- 342
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New structures for carrier-controlled ferromagnetism in Cd1−xMnxTe quantum wellsBertolini, M. / Maslana, W. / Boukari, H. / Gilles, B. / Cibert, J. / Ferrand, D. / Tatarenko, S. / Kossacki, P. / Gaj, J.A. et al. | 2002
- 347
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Molecular beam epitaxial growth of CdMnSe on InAs and AlGaSbGrabs, Peter / Slobodskyy, Anatoliy / Richter, Georg / Fiederling, Roland / Gould, Charles / Becker, Charles R. / Schmidt, Georg / Molenkamp, Laurens W. et al. | 2002
- 353
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GaInNAs for GaAs based lasers for the 1.3 to 1.5(micro)m rangeFischer, M. et al. | 2003
- 353
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GaInNAs for GaAs based lasers for the 1.3 to 1.5μm rangeFischer, M. / Gollub, D. / Reinhardt, M. / Kamp, M. / Forchel, A. et al. | 2002
- 353
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GaInNAs for GaAs based lasers for the 1.3 to 1.5mm rangeFischer, M. / Gollub, D. / Reinhardt, M. / Kamp, M. / Forchel, A. et al. | 2003
- 360
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The role of Sb in the MBE growth of (GaIn)(NAsSb)Volz, Kerstin / Gambin, Vincent / Ha, Wonill / Wistey, Mark A. / Yuen, Homan / Bank, Seth / Harris, James S. et al. | 2002
- 367
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1.5(micro)m GaInNAs(Sb) lasers grown on GaAs by MBEBank, Seth et al. | 2003
- 367
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1.5mm GaInNAs(Sb) lasers grown on GaAs by MBEBank, S. / Ha, W. / Gambin, V. / Wistey, M. / Yuen, H. / Goddard, L. / Kim, S. / Harris Jr, J. S. et al. | 2003
- 367
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1.5μm GaInNAs(Sb) lasers grown on GaAs by MBEBank, Seth / Ha, Wonill / Gambin, Vincent / Wistey, Mark / Yuen, Homan / Goddard, Lynford / Kim, Seongsin / Harris, James S. Jr. et al. | 2003
- 372
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Growth characteristics of GaInNAs/GaAs quantum dots by chemical beam epitaxyMakino, Shigeki / Miyamoto, Tomoyuki / Ohta, Masataka / Kageyama, Takeo / Ikenaga, Yoshihiko / Koyama, Fumio / Iga, Kenichi et al. | 2002
- 378
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A study and control of lattice sites of N and In/Ga interdiffusion in dilute nitride quantum wellsPeng, C.S. / Li, W. / Jouhti, T. / Pavelescu, E.-M. / Pessa, M. et al. | 2003
- 383
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Correlations between structural and optical properties of GaInNAs quantum wells grown by MBEChauveau, J.-M. / Trampert, A. / Pinault, M.-A. / Tournié, E. / Du, K. / Ploog, K.H. et al. | 2002
- 388
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InAs-InGaAsN quantum dots emitting at 1.55(micro)m grown by molecular beam epitaxyUstinov, Victor M. et al. | 2003
- 388
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InAs/InGaAsN quantum dots emitting at 1.55mm grown by molecular beam epitaxyUstinov, V. M. / Egorov, A. Y. / Odnoblyudov, V. A. / Kryzhanovskaya, N. V. / Musikhin, Y. G. / Tsatsul`nikov, A. F. / Alferov, Z. I. et al. | 2003
- 388
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InAs/InGaAsN quantum dots emitting at 1.55μm grown by molecular beam epitaxyUstinov, Victor M. / Egorov, Anton Yu. / Odnoblyudov, Vladimir A. / Kryzhanovskaya, Natalya V. / Musikhin, Yurii G. / Tsatsul’nikov, Andrey F. / Alferov, Zhores I. et al. | 2002
- 392
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A comparison of MBE- and MOCVD-grown GaInNAsPtak, A.J. / Johnston, S.W. / Kurtz, Sarah / Friedman, D.J. / Metzger, W.K. et al. | 2002
- 399
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Thickness dependent roughening of Ga(As,N)/GaAs MQW structures with high nitrogen contentMussler, G. / Däweritz, L. / Ploog, K.H. et al. | 2002
- 403
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Comparison of GaInNAs-GaAs and GaInNAs-GaNAs-GaAs quantum wells emitting over 1.3(micro)m wavelengthLi, L.H. et al. | 2003
- 403
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Comparison of GaInNAs/GaAs and GaInNAs/GaNAs/GaAs quantum wells emitting over 1.3mm wavelengthLi, L. H. / Patriarche, G. / Lemaitre, A. / Largeau, L. / Travers, L. / Harmand, J. C. et al. | 2003
- 403
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Comparison of GaInNAs/GaAs and GaInNAs/GaNAs/GaAs quantum wells emitting over 1.3μm wavelengthLi, L.H. / Patriarche, G. / Lemaitre, A. / Largeau, L. / Travers, L. / Harmand, J.C. et al. | 2003
- 408
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Structural changes on annealing of MBE grown (Ga, In)(N, As) as measured by X-ray absorption fine structureGambin, Vincent / Lordi, Vincenzo / Ha, Wonill / Wistey, Mark / Takizawa, Toshiyuki / Uno, Kazuyuki / Friedrich, Stephan / Harris, James et al. | 2002
- 412
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Growth of GaInNAs by atomic hydrogen-assisted RF-MBEOhmae, Akira / Matsumoto, Naoki / Okada, Yoshitaka et al. | 2002
- 417
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Valence band structure of GaAsN compounds and band-edge lineup in GaAs/GaAsN/InGaAs heterostructuresEgorov, A.Yu. / Odnobludov, V.A. / Mamutin, V.V. / Zhukov, A.E. / Tsatsul’nikov, A.F. / Kryzhanovskaya, N.V. / Ustinov, V.M. / Hong, Y.G. / Tu, C.W. et al. | 2002
- 422
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RF-MBE growth of InAsN layers on GaAs (001) substrates using a thick InAs buffer layerNishio, Susumu / Nishikawa, Atsushi / Katayama, Ryuji / Onabe, Kentaro / Shiraki, Yasuhiro et al. | 2002
- 427
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MBE growth and photoreflectance study of GaAsN alloy films grown on GaAs (001)Nishikawa, A. / Katayama, R. / Onabe, K. / Shiraki, Y. et al. | 2002
- 432
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MBE development of dilute nitrides for commercial long-wavelength laser applicationsMalis, O. / Liu, W.K. / Gmachl, C. / Fastenau, J.M. / Joel, A. / Gong, P. / Bland, S.W. / Moshegov, N. et al. | 2002
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Growth and characterization of GaInNP grown on GaAs substratesHong, Y.G. / Juang, F.S. / Kim, M.H. / Tu, C.W. et al. | 2002
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Improvement of crystalline quality of GaAsyP1−x−yNx layers with high nitrogen compositions at low-temperature growth by atomic hydrogen irradiationMomose, Kenji / Yonezu, Hiroo / Furukawa, Yuzo / Utsumi, Atsushi / Yoshizumi, Yusuke / Shinohara, Sei et al. | 2002
- 449
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Surfactant enhanced growth of GaNAs and InGaNAs using bismuthTixier, S. / Adamcyk, M. / Young, E.C. / Schmid, J.H. / Tiedje, T. et al. | 2002
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Improvement of cubic GaN film crystal quality by use of an AlN/GaN ordered alloy on GaAs (100) by plasma assisted molecular beam epitaxyKimura, Ryuhei / Shigemori, Atsushi / Shike, Junichi / Ishida, Koichi / Takahashi, Kiyoshi et al. | 2002
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Control of the polarity of GaN films using an Mg adsorption layerGrandjean, N. / Dussaigne, A. / Pezzagna, S. / Vennéguès, P. et al. | 2002
- 465
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Single-crystal zincblende GaN grown on GaP (100) substrate by molecular beam epitaxyKim, Min-Ho / Juang, F.S. / Hong, Y.G. / Tu, C.W. / Park, Seong-Ju et al. | 2002
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In surface segregation in InGaN/GaN quantum wellsDussaigne, A. / Damilano, B. / Grandjean, N. / Massies, J. et al. | 2003
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Plasma-assisted MBE growth of quaternary InAlGaN quantum well heterostructures with room temperature luminescenceDimakis, E. / Georgakilas, A. / Androulidaki, M. / Tsagaraki, K. / Kittler, G. / Kalaitzakis, F. / Cengher, D. / Bellet-Amalric, E. / Jalabert, D. / Pelekanos, N.T. et al. | 2002
- 481
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Molecular beam epitaxy of beryllium-doped GaN buffer layers for AlGaN/GaN HEMTsKatzer, D.S. / Storm, D.F. / Binari, S.C. / Roussos, J.A. / Shanabrook, B.V. / Glaser, E.R. et al. | 2002
- 487
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Comparative study of GaN/AlGaN MQWs grown homoepitaxially on and (0001) GaNBhattacharyya, A. / Friel, I / Iyer, S. / Chen, T.-C. / Li, W. / Cabalu, J. / Fedyunin, Y. / Ludwig, K.F. Jr. / Moustakas, T.D. / Maruska, H.-P. et al. | 2002
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Plasma-assisted MBE growth of InN films and InAlN/InN heterostructuresHigashiwaki, Masataka / Matsui, Toshiaki et al. | 2002
- 499
-
MOMBE growth studies of GaN using metalorganic sources and nitrogenLi, T. / Campion, R.P. / Foxon, C.T. / Rushworth, S.A. / Smith, L.M. et al. | 2003
- 505
-
Nucleation and growth of GaN observed by in situ line-of-sight mass spectrometryAverbeck, R. / Koblmueller, G. / Riechert, H. / Pongratz, P. et al. | 2002
- 510
-
Arsenic incorporation in GaN during growth by molecular beam epitaxyFoxon, C.T. / Novikov, S.V. / Li, T. / Campion, R.P. / Winser, A.J. / Harrison, I. / Kappers, M.J. / Humphreys, C.J. et al. | 2002
- 515
-
Digital alloy growth in mixed As/Sb heterostructuresKaspi, Ron / Donati, Giovanni P. et al. | 2002
- 521
-
GaAsSb/GaAs band alignment evaluation for long-wave photonic applicationsJohnson, S.R. / Guo, C.Z. / Chaparro, S. / Sadofyev, Yu.G. / Wang, J. / Cao, Y. / Samal, N. / Xu, J. / Yu, S.Q. / Ding, D. et al. | 2002
- 526
-
Investigation of a growth interruption under an As flux at AlSb/InAs interfaces with InSb bondsSigmund, J. / Karova, K. / Miehe, G. / Saglam, M. / Hartnagel, H.L. / Fuess, H. et al. | 2002
- 532
-
Controlled n-type doping of antimonides and arsenides using GaTeBennett, Brian R. / Magno, R. / Papanicolaou, N. et al. | 2002
- 538
-
MBE growth and photoluminescence properties of strained InAsSb/AlSbAs quantum wellsSolov’ev, V.A. / Terent’ev, Ya.V. / Toropov, A.A. / Mel’tser, B.Ya. / Semenov, A.N. / Ivanov, S.V. / Kop’ev, P.S. / Meyer, J.R. et al. | 2002
- 543
-
Reduction of the unintentional background electron density in AlSb/InAs/AlSb quantum wellsKadow, C. / Lin, H.-K. / Dahlström, M. / Rodwell, M. / Gossard, A.C. / Brar, B. / Sullivan, G. et al. | 2003
- 547
-
Structure stability of short-period InAs/AlSb superlatticesXu, Dapeng / Litvinchuk, A.P. / Wang, X. / Delaney, A. / Le, H. / Pei, S.S. et al. | 2002
- 551
-
Anisotropic structural and electronic properties of InSb/AlxIn1−xSb quantum wells grown on GaAs (001) substratesMishima, T.D. / Keay, J.C. / Goel, N. / Ball, M.A. / Chung, S.J. / Johnson, M.B. / Santos, M.B. et al. | 2002
- 556
-
InAs/AlGaSb heterostructure displacement sensors for MEMS/NEMS applicationsYamaguchi, Hiroshi / Miyashita, Sen / Hirayama, Yoshiro et al. | 2002
- 560
-
Transport properties of Sn-doped InSb thin films and applications to Hall elementOkamoto, A. / Shibasaki, I. et al. | 2003
- 565
-
Characterization of MBE grown II–VI semiconductor thin layers by X-ray interferencePrior, K.A. / Tang, X. / O’Donnell, C. / Bradford, C. / David, L. / Cavenett, B.C. et al. | 2002
- 571
-
Accuracy of the in situ determination of the CdZnTe temperature by ellipsometry before the growth of HgCdTe by MBEBadano, Giacomo / Garland, James W. / Sivananthan, S. et al. | 2002
- 576
-
PL characteristics of MBE-grown, Pb-doped ZnSe crystal layersMita, Yoh / Kuronuma, Ryoichi / Sasaki, Shoichiro / Inoue, Masanori / Maruyama, Susumu et al. | 2003
- 581
-
Growth and characterization of MgS/CdSe self-assembled quantum dotsBradford, C. / Urbaszek, B. / Funato, M. / Balocchi, A. / Graham, T.C.M. / McGhee, E.J. / Warburton, R.J. / Prior, K.A. / Cavenett, B. et al. | 2002
- 586
-
Growth and characterization of CdSe:Mn quantum dotsTang, X. / Urbaszek, B. / Graham, T.C.M. / Warburton, R.J. / Prior, K.A. / Cavenett, B.C. et al. | 2002
- 591
-
Growth of zinc blende MnS and MnS heterostructures by MBE using ZnS as a sulfur sourceDavid, L. / Bradford, C. / Tang, X. / Graham, T.C.M. / Prior, K.A. / Cavenett, B.C. et al. | 2002
- 596
-
High quality ZnTe heteroepitaxy layers using low-temperature buffer layersChang, Jiho / Godo, Kenji / Song, Junsuk / Oh, Dongcheol / Lee, Changwoo / Yao, Takafumi et al. | 2003
- 602
-
Growth conditions in molecular beam epitaxy for controlling CdSeTe epilayer compositionMatsumura, Nobuo / Sakamoto, Takuya / Saraie, Junji et al. | 2002
- 607
-
Electrical properties of heavily Al-doped ZnSe grown by molecular beam epitaxyOh, D.C. / Chang, J.H. / Takai, T. / Song, J.S. / Godo, K. / Park, Y.K. / Shindo, K. / Yao, T. et al. | 2002
- 612
-
Strong luminescence due to localized excitons in CdTe/ZnSe fractional monolayer structuresChang, Jiho / Takai, Toshiaki / Godo, Kenji / Makino, Hisao / Goto, Takenari / Yao, Takafumi et al. | 2003
- 619
-
MBE growth and characterization of A-site deficient, low-field magnetoresistance (Pr1-xSrx)yMnO3-d oriented thin filmsLiu, Guojun et al. | 2003
- 619
-
MBE growth and characterization of A-site deficient, low-field magnetoresistance (Pr1−xSrx)yMnO3−δ oriented thin filmsLiu, Guojun / Feng, Yanhua / Wang, Hongmei / Makino, H. / Hanada, T. / Yao, T. et al. | 2002
- 623
-
ZnO and ZnMgO growth on a-plane sapphire by molecular beam epitaxyOgata, K. / Koike, K. / Tanite, T. / Komuro, T. / Yan, F. / Sasa, S. / Inoue, M. / Yano, M. et al. | 2002
- 628
-
Doping effects in ZnO layers using Li3N as a doping sourceKo, Hang-Ju / Chen, Yefan / Hong, Soon-Ku / Yao, Takafumi et al. | 2003
- 633
-
Natural ordering of ZnO1−xSex grown by radical source MBEIwata, K. / Yamada, A. / Fons, P. / Matsubara, K. / Niki, S. et al. | 2002
- 638
-
Development of integrated heterostructures on silicon by MBEDroopad, Ravi / Yu, Zhiyi / Li, Hao / Liang, Yong / Overgaard, Corey / Demkov, Alex / Zhang, Xiaodong / Moore, Karen / Eisenbeiser, Kurt / Hu, Mike et al. | 2002
- 645
-
Advances in high κ gate dielectrics for Si and III–V semiconductorsKwo, J. / Hong, M. / Busch, B. / Muller, D.A. / Chabal, Y.J. / Kortan, A.R. / Mannaerts, J.P. / Yang, B. / Ye, P. / Gossmann, H. et al. | 2002
- 645
-
Advances in high k gate dielectrics for Si and III-V semiconductorsKwo, J. et al. | 2003
- 651
-
Heavy arsenic doping of silicon by molecular beam epitaxyLiu, Xian / Tang, Qiang / Kamins, Theodore I. / Harris, James S. et al. | 2002
- 657
-
Ordered arrays of rare-earth silicide nanowires on Si(001)Ragan, Regina / Chen, Yong / Ohlberg, Douglas A.A. / Medeiros-Ribeiro, Gilberto / Williams, R.Stanley et al. | 2002
- 662
-
Nucleation of Ti-catalyzed self-assembled kinked Si nanowires grown by gas source MBETang, Qiang / Liu, Xian / Kamins, Theodore I. / Solomon, Glenn S. / Harris, James S. et al. | 2002
- 666
-
Critical thickness of self-assembled Ge quantum dot superlatticesLiu, J.L. / Wan, J. / Wang, K.L. / Yu, D.P. et al. | 2003
- 670
-
Growth of SiGe/Ge/SiGe heterostructures with ultrahigh hole mobility and their device applicationIrisawa, T. / Koh, S. / Nakagawa, K. / Shiraki, Y. et al. | 2002
- 676
-
Dynamics and surface segregation during GSMBE of Si1−yCy and Si1−x−yGexCy on the Si(001) surfacePrice, R.W. / Tok, E.S. / Liu, R. / Wee, A.T.S. / Woods, N.J. / Zhang, J. et al. | 2002
- 681
-
Characterization of epitaxial Si1−yCy layers on Si(001) grown by gas-source molecular beam epitaxyAbe, Katsuya / Yamada, Akira / Konagai, Makoto et al. | 2002
- 685
-
Relaxation enhancement of SiGe thin layers by ion implantation into Si substratesSawano, K. / Hirose, Y. / Koh, S. / Nakagawa, K. / Hattori, T. / Shiraki, Y. et al. | 2002
- 689
-
Hole transport properties of B-doped relaxed SiGe epitaxial films grown by molecular beam epitaxyKoh, Shinji / Murata, Kazuhiro / Irisawa, Toshifumi / Nakagawa, Kiyokazu / Shiraki, Yasuhiro et al. | 2002
- 693
-
Planarization of SiGe virtual substrates by CMP and its application to strained Si modulation-doped structuresSawano, K. / Arimoto, K. / Hirose, Y. / Koh, S. / Usami, N. / Nakagawa, K. / Hattori, T. / Shiraki, Y. et al. | 2002
- 697
-
Continuous wave operation of quantum cascade lasersBeck, M. / Hofstetter, D. / Aellen, T. / Blaser, S. / Faist, J. / Oesterle, U. / Gini, E. et al. | 2002
- 701
-
Thermal behavior of GaAs/AlGaAs quantum-cascade lasers: effect of the Al content in the barrier layersOrtiz, V. / Becker, C. / Page, H. / Sirtori, C. et al. | 2003
- 707
-
Strain compensated Si/Si0.2Ge0.8 quantum cascade structures grown by low temperature molecular beam epitaxyGrützmacher, D. / Mentese, S. / Müller, E. / Diehl, L. / Sigg, H. / Campidelli, Y. / Kermarrec, O. / Bensahel, D. / Roch, T. / Stangl, J. et al. | 2002
- 718
-
InAs-based quantum cascade light emitting structures containing a double plasmon waveguideOhtani, K. / Sakuma, H. / Ohno, H. et al. | 2002
- 723
-
Material engineering for InAs/GaSb/AlSb quantum cascade light emitting devicesMarcadet, X. / Becker, C. / Garcia, M. / Prévot, I. / Renard, C. / Sirtori, C. et al. | 2002
- 729
-
InAs-InGaAs-GaAs quantum dot lasers of 1.3(micro)m range with enhanced optical gainKovsh, A.R. et al. | 2003
- 729
-
InAs/InGaAs/GaAs quantum dot lasers of 1.3mm range with enhanced optical gainKovsh, A. R. / Maleev, N. A. / Zhukov, A. E. / Mikhrin, S. S. / Vasil`ev, A. P. / Semenova, E. A. / Shernyakov, Y. M. / Maximov, M. V. / Livshits, D. A. / Ustinov, V. M. et al. | 2003
- 729
-
InAs/InGaAs/GaAs quantum dot lasers of 1.3μm range with enhanced optical gainKovsh, A.R. / Maleev, N.A. / Zhukov, A.E. / Mikhrin, S.S. / Vasil’ev, A.P. / Semenova, E.A. / Shernyakov, Yu.M. / Maximov, M.V. / Livshits, D.A. / Ustinov, V.M. et al. | 2003
- 737
-
Tuning the single optical mode spontaneous emission coupling of a quantum dot in a micropost cavitySolomon, G.S. / Pelton, M. / Yamamoto, Y. et al. | 2003
- 742
-
Improved performance of MBE grown quantum-dot lasers with asymmetric dots in a well design emitting near 1.3mmKrebs, R. / Deubert, S. / Reithmaier, J. P. / Forchel, A. et al. | 2003
- 742
-
Improved performance of MBE grown quantum-dot lasers with asymmetric dots in a well design emitting near 1.3(micro)mKrebs, R. et al. | 2003
- 742
-
Improved performance of MBE grown quantum-dot lasers with asymmetric dots in a well design emitting near 1.3μmKrebs, R. / Deubert, S. / Reithmaier, J.P. / Forchel, A. et al. | 2002
- 748
-
InP-based VCSEL technology covering the wavelength range from 1.3 to 2.0μmBoehm, Gerhard / Ortsiefer, Markus / Shau, Robert / Rosskopf, Juergen / Lauer, Christian / Maute, Markus / Köhler, Fabian / Mederer, Felix / Meyer, Ralf / Amann, Markus-Christian et al. | 2002
- 748
-
InP-based VCSEL technology covering the wavelength range from 1.3 to 2.0(micro)mBoehm, Gerhard et al. | 2003
- 748
-
InP-based VCSEL technology covering the wavelength range from 1.3 to 2.0mmBoehm, G. / Ortsiefer, M. / Shau, R. / Rosskopf, J. / Lauer, C. / Maute, M. / Kohler, F. / Mederer, F. / Meyer, R. / Amann, M. C. et al. | 2003
- 754
-
Fabrication of GaAs laser diodes on Si using low-temperature bonding of MBE-grown GaAs wafers with Si wafersCengher, D. / Hatzopoulos, Z. / Gallis, S. / Deligeorgis, G. / Aperathitis, E. / Androulidaki, M. / Alexe, M. / Dragoi, V. / Kyriakis-Bitzaros, E.D. / Halkias, G. et al. | 2002
- 760
-
A forbidden temperature region for the growth of planar strained InAlGaAs MQW structures for 1.3mm lasersSpringThorpe, A. J. / Extavour, M. / Goodchild, D. / Griswold, E. M. / Smith, G. / White, J. K. / Hinzer, K. / Glew, R. / Williams, R. / Robert, F. et al. | 2003
- 760
-
A forbidden temperature region for the growth of planar strained InAlGaAs MQW structures for 1.3(micro)m lasersSpringthorpe, A.J. et al. | 2003
- 760
-
A forbidden temperature region for the growth of planar strained InAlGaAs MQW structures for 1.3μm lasersSpringThorpe, A.J. / Extavour, M. / Goodchild, D. / Griswold, E.M. / Smith, G. / White, J.K. / Hinzer, K. / Glew, R. / Williams, R. / Robert, F. et al. | 2002
- 766
-
Lattice-matched Al0.95Ga0.05AsSb oxide for current confinement in InP-based long wavelength VCSELsReddy, M.H.M. / Buell, D.A. / Asano, T. / Koda, R. / Feezell, D. / Huntington, A.S. / Coldren, L.A. et al. | 2003
- 771
-
Room temperature 1.3mm emission from self-assembled GaSb/GaAs quantum dotsFarrer, I. / Murphy, M. J. / Ritchie, D. A. / Shields, A. J. et al. | 2003
- 771
-
Room temperature 1.3(micro)m emission from self-assembled GaSb-GaAs quantum dotsFarrer, I. et al. | 2003
- 771
-
Room temperature 1.3μm emission from self-assembled GaSb/GaAs quantum dotsFarrer, I / Murphy, M.J / Ritchie, D.A / Shields, A.J et al. | 2002
- 777
-
Experimental extract and empirical formulas of refractive indices of GaAs and AlAs at high temperature by HRXRD and optical reflectivity measurementZhang, B.Y. / Solomon, G. / Weihs, G. / Yamamoto, Y. et al. | 2002
- 782
-
The effects of (NH4)2S passivation treatments on the dark current–voltage characteristics of InGaAsSb PIN detectorsZhang, X. / Li, A.Z. / Lin, C. / Zheng, Y.L. / Xu, G.Y. / Qi, M. / Zhang, Y.G. et al. | 2002
- 787
-
Normal incidence InAs/InGaAs dots-in-well detectors with current blocking AlGaAs layerRotella, P. / Raghavan, S. / Stintz, A. / Fuchs, B. / Krishna, S. / Morath, C. / Le, D. / Kennerly, S.W. et al. | 2003
- 794
-
Template design and fabrication for low-loss orientation-patterned nonlinear AlGaAs waveguides pumped at 1.55(micro)mYu, X. et al. | 2003
- 794
-
Template design and fabrication for low-loss orientation-patterned nonlinear AlGaAs waveguides pumped at 1.55μmYu, X. / Scaccabarozzi, L. / Levi, O. / Pinguet, T.J. / Fejer, M.M. / Harris, J.S. Jr. et al. | 2003
- 794
-
Template design and fabrication for low-loss orientation-patterned nonlinear AlGaAs waveguides pumped at 1.55mmYu, X. / Scaccabarozzi, L. / Levi, O. / Pinguet, T. J. / Fejer, M. M. / Harris Jr, J. S. et al. | 2003
- 800
-
Gas source MBE growth of TlInGaAs/InP laser diodes and their room temperature operationLee, H.J. / Fujiwara, A. / Imada, A. / Asahi, H. et al. | 2002
- 804
-
Properties of metamorphic materials and device structures on GaAs substratesHoke, W.E. / Kennedy, T.D. / Torabi, A. / Whelan, C.S. / Marsh, P.F. / Leoni, R.E. / Lardizabal, S.M. / Zhang, Y. / Jang, J.H. / Adesida, I. et al. | 2002
- 811
-
MBE growth of ALGaN/GaN HEMTS on resistive Si(111) substrate with RF small signal and power performancesCordier, Y. / Semond, F. / Lorenzini, P. / Grandjean, N. / Natali, F. / Damilano, B. / Massies, J. / Hoël, V. / Minko, A. / Vellas, N. et al. | 2002
- 816
-
High-performance enhancement-mode pseudomorphic InGaP/InGaAs/GaAs HEMT structures by gas source molecular beam epitaxyLi, A.Z. / Chen, Y.Q. / Chen, J.X. / Qi, M. / Liu, X.C. / Chen, J. / Wang, R.M. / Wang, W.L. / Li, W.X. et al. | 2003
- 822
-
Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAsCordier, Y. / Lorenzini, P. / Chauveau, J.-M. / Ferré, D. / Androussi, Y. / DiPersio, J. / Vignaud, D. / Codron, J.-L. et al. | 2002
- 827
-
High indium metamorphic HEMT on a GaAs substrateHoke, W.E. / Kennedy, T.D. / Torabi, A. / Whelan, C.S. / Marsh, P.F. / Leoni, R.E. / Xu, C. / Hsieh, K.C. et al. | 2002
- 832
-
Growth of shallow InAs HEMTs with metamorphic bufferHeyn, Ch. / Mendach, S. / Löhr, S. / Beyer, S. / Schnüll, S. / Hansen, W. et al. | 2002
- 837
-
Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga2O3(Gd2O3) as gate dielectricYang, B / Ye, P.D / Kwo, J / Frei, M.R / Gossmann, H.-J.L / Mannaerts, J.P / Sergent, M / Hong, M / Ng, K / Bude, J et al. | 2002
- 843
-
V-grooved InGaAs quantum-wire FET fabricated under an As2 flux in molecular-beam epitaxySugaya, T. / Jang, K.-Y. / Wada, T. / Sato, A. / Ogura, M. / Komori, K. et al. | 2003
- 848
-
Molecular beam epitaxial growth and characterization of InP/GaAsSb/InP double heterojunction bipolar transistorsRajavel, R.D. / Hussain, T. / Montes, M.C. / Sawins, M.W. / Thomas, S. III / Chow, D.H. et al. | 2002
- 852
-
Low-voltage InAsP/InAs HBT and metamorphic InAs BJT devices grown by molecular beam epitaxyAverett, K.L. / Wu, X. / Koch, M.W. / Wicks, G.W. et al. | 2002
- 858
-
Author Index| 2003
- 873
-
Subject Index| 2003
- ii
-
Editorial Board| 2003
- ix
-
Editor's Preface| 2003
- vii
-
Conference Information| 2003
- xi
-
Contents| 2003
- xxi
-
Photo 1: MBE-XII Conference| 2003
- xxii
-
Photo 1: Night Skyline San Francisco| 2003