ETCH - Integrating high-k dielectrics: Etched polysilicon or metal gates? The viability of etching high-k gate stacks in a single chamber using standard processing equipment has been shown. (Englisch)
- Neue Suche nach: Schram, T.
- Neue Suche nach: Schram, T.
- Neue Suche nach: Beckx, S.
- Neue Suche nach: Gendt, S.De
- Neue Suche nach: Vertommen, J.
- Neue Suche nach: Lee, S.
In:
Solid state technology
;
46
, 6
; 61-66
;
2003
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:ETCH - Integrating high-k dielectrics: Etched polysilicon or metal gates? The viability of etching high-k gate stacks in a single chamber using standard processing equipment has been shown.
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Beteiligte:
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Erschienen in:Solid state technology ; 46, 6 ; 61-66
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Verlag:
- Neue Suche nach: PennWell Publ. Co.
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Erscheinungsort:Tulsa, Okla.
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Erscheinungsdatum:2003
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ISSN:
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ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 33.72 / 33.61 / 53.56 / 53.51
- Weitere Informationen zu Basisklassifikation
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Datenquelle:
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