Silicon Devices - A Methodology to Extract the Channel Current of Permeable Gate Oxide MOSFETs (Englisch)
- Neue Suche nach: Palestri, P.
- Neue Suche nach: Palestri, P.
- Neue Suche nach: Esseni, D.
- Neue Suche nach: Selmi, L.
- Neue Suche nach: Guegan, G.
- Neue Suche nach: Sangiorgi, E.
In:
IEEE transactions on electron devices
;
50
, 5
; 1314-1321
;
2003
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Silicon Devices - A Methodology to Extract the Channel Current of Permeable Gate Oxide MOSFETs
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Beteiligte:
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Erschienen in:IEEE transactions on electron devices ; 50, 5 ; 1314-1321
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsort:New York, NY
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Erscheinungsdatum:2003
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ISSN:
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ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 53.50 / 53.00 / 52.50 / 54.20
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 770/5670
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Klassifikation:
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Datenquelle:
Inhaltsverzeichnis – Band 50, Ausgabe 5
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