Study of capacitance in hydrogenated amorphous silicon phototransistors for imaging arrays (Unbekannt)
- Neue Suche nach: Tucci, M.
- Neue Suche nach: Tucci, M.
- Neue Suche nach: Caputo, D.
In:
Journal of non-crystalline solids
;
338
, 1
; 780-783
;
2004
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:Study of capacitance in hydrogenated amorphous silicon phototransistors for imaging arrays
-
Beteiligte:Tucci, M. ( Autor:in ) / Caputo, D.
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Erschienen in:Journal of non-crystalline solids ; 338, 1 ; 780-783
-
Verlag:
- Neue Suche nach: North-Holland Publ. Co.
-
Erscheinungsort:Amsterdam
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Erscheinungsdatum:2004
-
ISSN:
-
ZDBID:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Print
-
Sprache:Unbekannt
- Neue Suche nach: 51.45 / 51.60 / 33.61 / 35.90
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 535/3475
-
Schlagwörter:
-
Klassifikation:
-
Datenquelle:
Inhaltsverzeichnis – Band 338, Ausgabe 1
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Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
-
Microcrystalline silicon. - Growth and device applicationMatsuda, Akihisa et al. | 2004
- 13
-
Kinetics of silicon film growth and the deposition phase diagramFerreira, G.M. et al. | 2004
- 19
-
Cat-CVD (hot-wire CVD): how different from PECVD in preparing amorphous siliconMatsumura, Hideki et al. | 2004
- 27
-
The a-Si:H growth mechanism and the role of H abstraction from the surface by SiH3 radicals via an Eley-Rideal mechanismKessels, W.M.M. et al. | 2004
- 32
-
Simulation of the growth dynamics of amorphous and microcrystalline siliconBailat, J. et al. | 2004
- 37
-
The growth kinetics of silicon nitride deposited from the SiH4-N2 reactant mixture in a remote plasmaKessels, W.M.M. et al. | 2004
- 42
-
Preparation of microcrystalline silicon films at ultra high-rate of 10 nm-s using high-density plasmaNiikura, Chisato et al. | 2004
- 47
-
Fabrication of hydrogenated amorphous silicon films exibiting higher stability against light soakingShimizu, Satoshi et al. | 2004
- 51
-
Trapping of plasma produced nanocrystalline Si particles on a low temperature substrateChaâbane, Nihed et al. | 2004
- 56
-
Growth mechanism of microcrystalline silicon at high pressure conditionsRath, J.K. et al. | 2004
- 61
-
Properties of a-Si:H and a-(Si,Ge):h films grown using combined hot wire-ECR plasma processesRing, Matthew A. et al. | 2004
- 65
-
Catalytic decomposition of HCN on heated W surfaces to produce CN radicalsUmemoto, Hironobu et al. | 2004
- 70
-
Hydrogen effusion from highly-ordered near-stoichiometric a-SiC:HCamargo, S.S. et al. | 2004
- 76
-
Deposition and characterization of silicon oxynitride for integrated optical applicationsAlayo, M.I. et al. | 2004
- 81
-
Fabrication and characterization of thin films of PbI2 for medical imagingCondeles, J.F. et al. | 2004
- 86
-
Contribution of plasma generated nanocrystals to the growth of microcrystalline silicon thin filmsKasouit, S. et al. | 2004
- 91
-
Low frequency plasma deposition and characterization of Si1-xGex:H,F filmsAmbrosio, R. et al. | 2004
- 97
-
Nucleation mechanism of microcrystalline silicon from the amorphous phaseFujiwara, Hiroyuki et al. | 2004
- 102
-
The mutual exclusion of luminescence and transport in nanocrystalline silicon networksBalberg, I. et al. | 2004
- 106
-
p- and n-type microcrystalline Si1-xCx fabricated by plasma CVD with 40.68-MHz excitation sourceToyama, T. et al. | 2004
- 110
-
Microcrystalline silicon growth in the presence of dopants: effect of high growth temperaturesGordijn, A. et al. | 2004
- 115
-
Disorder-induced nucleation in the nanocrystalline silicon film growth from chlorinated materials by rf plasma-enhanced chemical vapor depositionShirai, Hajime et al. | 2004
- 119
-
Nano-crystalline Si1-xCx:H thin films deposited by PECVD for SiC-on-insulator applicationForhan, N.A.E. et al. | 2004
- 123
-
Preparation of wide gap and low resistive hetero-structured SiCX films as wide gap window of solar cellsItoh, T. et al. | 2004
- 127
-
Aluminum-induced crystallization of amorphous silicon: preparation effect on growth kineticsSchneider, J. et al. | 2004
- 131
-
The constrained growth of uniform nc-Si grains from a-SiNx-a-Si:H-a-SiNx: mechanism and experimentsChen, Kai et al. | 2004
- 135
-
Investigation of nc-Si inclusions in multilayer a-Si:H films obtained using the layer by layer techniqueGudovskikh, A.S. et al. | 2004
- 139
-
Investigation of nanostructured porous silicon by Raman spectroscopy and atomic force microscopyAbramof, P.G. et al. | 2004
- 143
-
Excimer laser crystallized phosphorous-doped polycrystalline siliconSaleh, R. et al. | 2004
- 147
-
Deposition and properties of microcrystalline silicon from chlorosilane precursor gasesBeyer, W. et al. | 2004
- 151
-
Chemical phase separation in Zr silicate alloys: a spectroscopic study distinguishing between chemical phase separation with different degrees of micro- and nano-crystallinityRayner, G.B. et al. | 2004
- 155
-
Local atomic structure and infrared effective charges in tetrahedrally-bonded glasses from ab initio theory electronic structure calculationsLucovsky, G. et al. | 2004
- 159
-
Infrared studies combined with hydrogen effusion experiments on nanostructured porous siliconKoropecki, R.R. et al. | 2004
- 163
-
Deposition of microcrystalline silicon-carbon alloys in low power regimeAmbrosone, G. et al. | 2004
- 168
-
Defects and structure of hydrogenated microcrystalline silicon films deposited by different techniquesNeto, A.L.B. et al. | 2004
- 173
-
Deposition of high crystallinity poly-Si films on glass substrate and fabrication of high mobility bottom-gate TFTLee, J.W. et al. | 2004
- 178
-
Polycrystalline silicon obtained by gold metal induced crystallizationPereira, L. et al. | 2004
- 183
-
Role of the rf frequency on the structure and composition of polymorphous silicon filmsÁguas, H. et al. | 2004
- 188
-
The diphasic nc-Si-a-Si:H thin film with improved medium-range orderZhang, S. et al. | 2004
- 192
-
Laser-induced phase transformation in p-doped nanocrystalline silicon thin filmsConcari, S.B. et al. | 2004
- 197
-
SixGe1-x films and heterojunctions produced by epitaxial crystallization of a-SixGe1-x alloys on GaAsDondeo, F. et al. | 2004
- 201
-
EXAFS and semiconducting amorphous systemsDalba, G. et al. | 2004
- 206
-
Characterization of the density of states of polymorphous silicon films produced at 13.56 and 27.12 MHz using CPM and SCLC techniquesRaniero, L. et al. | 2004
- 211
-
Density distribution of gap states in extremely thin a-Si:H layers on crystalline silicon wafersSchmidt, M. et al. | 2004
- 215
-
Femtosecond Bragg switching in opal-a-nc-Si photonic crystalsMazurenko, Dmitry A. et al. | 2004
- 218
-
Theory of growth of amorphous semiconductorsBarrio, R.A. et al. | 2004
- 222
-
Temperature dependence of the optical absorption coefficient of microcrystalline siliconPoruba, A. et al. | 2004
- 228
-
Comparison of AC and DC constant photocurrent methods for determination of defect densitiesMain, C. et al. | 2004
- 232
-
Microstructure characterization of plasma-grown a-Si:H and related materials by effusion of implanted heliumBeyer, W. et al. | 2004
- 236
-
Correlation between plasma chemistry, microstructure and electronic properties of Si:H thin films prepared with hydrogen dilutionChaudhuri, Partha et al. | 2004
- 240
-
X-ray spectroscopy of the valence band electronic structure in high-deposition-rate a-Si:HBelin-Ferré, E. et al. | 2004
- 244
-
Optical spectroscopy of the density of gap states in ETP-deposited a-Si:HWillekens, J. et al. | 2004
- 249
-
In-guide measurement of the infra red absorption variation induced in hydrogenated amorphous silicon by visible radiationCantore, F. et al. | 2004
- 254
-
Polarization effects in the calculation of N1s binding energies of carbon-nitrogen moleculesCarvalho, A.C.M. et al. | 2004
- 258
-
Amorphous alloys of C0.5Si0.5, Si0.5Ge0.5 and In0.5Se0.5: atomic topologyPeña, E.Y. et al. | 2004
- 262
-
An electron-spin-resonance study of laser crystallized polycrystalline siliconBrendel, K. et al. | 2004
- 266
-
Variations in optical reflectivity in the semiconductor-metal phase transition of vanadium dioxideIlinski, A. et al. | 2004
- 269
-
Structural and optical characteristics of InGaP layers grown on GaAs substrates by LPE techniquePrutskij, T. et al. | 2004
- 273
-
Stoichiometry unbalance and photoluminescence emission in Ga1-XAsX films prepared by flash evaporationDias da Silva, J.H. et al. | 2004
- 278
-
Synthesis and luminescent properties of a new class of nematic oxadiazole containing poly-ethers for PLEDAcierno, Domenico et al. | 2004
- 283
-
Comparative analysis of different preparation methods of chalcogenide glasses: molecular dynamics structure simulationsHegedüs, J. et al. | 2004
- 287
-
Formation of microcrystalline silicon at low temperatures and role of hydrogenKocka, J. et al. | 2004
- 291
-
Stability of deuterated amorphous silicon solar cellsMunyeme, G. et al. | 2004
- 295
-
Influence of laser crystallization on the hydrogen density-of-states distributionNickel, N.H. et al. | 2004
- 299
-
On the reversibility of hydrogen effects on the properties of amorphous silicon carbideda Silva, Cesar R.S. et al. | 2004
- 303
-
Model of electronic transport in microcrystalline silicon and its use for prediction of device performanceFejfar, A. et al. | 2004
- 310
-
New experimental evidence for the role of long-range potential fluctuations in the mechanism of 1-f noise in a-Si:HBakker, J.P.R. et al. | 2004
- 314
-
Photoconductivity of a-Si:H and a-Ge:H: influence of potential fluctuationsShimakawa, K. et al. | 2004
- 318
-
Room temperature electron tunneling and storage in a nanocrystalline silicon floating gate structureWu, Liangcai et al. | 2004
- 322
-
Determination of the density of defect states by thermally stimulated conductivity studied from numerical simulationsSchmidt, J.A. et al. | 2004
- 326
-
Strong field charge transport in MIS structures based on low-K carbon filmsZuniga, C. et al. | 2004
- 331
-
Hopping mechanism of electric transport in intrinsic and p-doped nanocrystalline silicon thin filmsConcari, S.B. et al. | 2004
- 336
-
Study of transport, trapping and recombination mechanisms in microcrystalline silicon by transient photoconductivityVanderhaghen, R. et al. | 2004
- 341
-
An extended model for the mobility edge carrier transportOkamoto, Hiroaki et al. | 2004
- 345
-
Optoelectronic characterization of a-SIC:H stacked devicesLouro, P. et al. | 2004
- 349
-
High-field transport in amorphous carbon and carbon nitride filmsKumar, Sushil et al. | 2004
- 353
-
Photogenerated carriers in (micro)c-Si:H-a-Si:H multi-layersJuska, G. et al. | 2004
- 357
-
A hydrogen-related defect and the Staebler-Wronski effect in hydrogenated amorphous siliconSu, T. et al. | 2004
- 361
-
Photoinduced structural instability around the Si-H bond in undoped a-Si:H and related wide-gap alloysOheda, Hidetoshi et al. | 2004
- 365
-
A change of photoinduced dilation of a-Si:H by cyanide treatmentSobajima, Y. et al. | 2004
- 369
-
Effects of grain size and plasma-induced modification of the dielectric on the mobility and stability of bottom gate microcrystalline silicon TFTsKasouit, S. et al. | 2004
- 374
-
The Staebler-Wronski effect in amorphous germaniumWhitaker, J. et al. | 2004
- 378
-
Creation of metastable defects in microcrystalline silicon films by keV electron irradiationChukichev, M.V. et al. | 2004
- 382
-
Novel network control in hydrogenated amorphous silicon by molecular beam deposition methodMatsuki, Nobuyuki et al. | 2004
- 386
-
Influence of light-soaking and annealing on electron and hole mobility-lifetime products in a-Si:HMorgado, E. et al. | 2004
- 390
-
Investigation of bandgap states using the modulated photocurrent technique in both high and low frequency regimesKleider, J.P. et al. | 2004
- 400
-
Vacancy-like defects in a-Si: a first principles studyMiranda, C.R. et al. | 2004
- 403
-
Post hydrogenation effect by hot wire method on poly-crystalline silicon based devicesShimizu, Kousaku et al. | 2004
- 408
-
Analysis of a-Si:H subgap absorption spectra obtained from absolute cavity ringdown absorption spectroscopy using an empirical DOS modelAarts, I.M.P. et al. | 2004
- 412
-
Density-functional calculation of hyperfine interaction constants of dangling bond and weak bond in GeN and SiN filmsYokomichi, H. et al. | 2004
- 416
-
Atomic topology and optical properties of amorphous porous silicon, ap-SiLoustau, Emilye R.L. et al. | 2004
- 421
-
Aging effects in microcrystalline silicon films studied by transient photoconductivitySmirnov, V. et al. | 2004
- 425
-
Small bond angles in amorphous silicon: are they a new type of defect?Kugler, S. et al. | 2004
- 430
-
Post-growth annealing effects in compensated (micro)c-Si:H samplesDussan, A. et al. | 2004
- 434
-
The nature of dangling bond recombination in (micro)c-Si:HBoehme, Christoph et al. | 2004
- 440
-
Electroluminescence from amorphous-crystalline silicon heterostructuresBresler, M.S. et al. | 2004
- 444
-
Photoluminescence studies of a-Si:H-c-Si-heterojunction solar cellsTardon, S. et al. | 2004
- 448
-
Comparison between light emission from Si-SiNX and Si-SiO2 multilayers: role of interface statesChen, Kunji et al. | 2004
- 452
-
Light-induced effects on low energy photoluminescence in a-Si:H investigated by frequency-resolved spectroscopyOgihara, C. et al. | 2004
- 456
-
Coexistence of geminate and non-geminate recombination in a-Si:H and a-Ge:H observed by quadrature frequency resolved spectroscopyAoki, T. et al. | 2004
- 460
-
Non-radiative and radiative properties of PLD-deposited polycrystalline GaN studied by UV ps-to-ns laser pulsesNiehus, M. et al. | 2004
- 465
-
Photoluminescence in microcrystalline silicon films grown from argon diluted silaneYoon, Jong-Hwan et al. | 2004
- 469
-
Photoluminescence of a-GeN alloys doped with different rare-earth ionsRibeiro, C.T.M. et al. | 2004
- 473
-
Photon and electron excitation of rare-earth-doped amorphous SiN filmsZanatta, A.R. et al. | 2004
- 477
-
Effects of proton irradiation on the photoelectronic properties of microcrystalline siliconBrüggemann, R. et al. | 2004
- 481
-
The change of photoluminescence characteristics of amorphous carbon films due to hydrogen dilutionXu, Jun et al. | 2004
- 486
-
Structural properties of amorphous carbon nitride films prepared by ion beam assisted depositionFerlauto, A.S. et al. | 2004
- 490
-
Self-sustained bridges of a-SiC:H films obtained by PECVD at low temperatures for MEMS applicationsCarreño, M.N.P. et al. | 2004
- 496
-
Specific statistical features of surface enhanced Raman scattering (SERS) spectra of graphitePócsik, I. et al. | 2004
- 499
-
Thermal expansion dependence on the sp2 concentration of amorphous carbon and carbon nitrideChampi, A. et al. | 2004
- 503
-
Amorphous hydrogenated carbon films deposited by PECVD: influence of the substrate temperature on film growth and microstructureCapote, G. et al. | 2004
- 509
-
Fabrication of amorphous boron-carbon-nitrogen films by hot-wire CVDYokomichi, H. et al. | 2004
- 513
-
Amorphizing non-cubic structures of carbon. The case of rhombohedral and hexagonal crystalline supercellsRomero, C. et al. | 2004
- 517
-
Microstructure characterization in dc sputtered a-SiC:H films by inert gas effusion measurementsSaleh, R. et al. | 2004
- 521
-
Band gap control of hydrogenated amorphous silicon carbide films prepared by hot-wire chemical vapor depositionTabata, A. et al. | 2004
- 525
-
Amorphous hydrogenated carbon-nitride films prepared by RF-PECVD in methane-nitrogen atmospheresMotta, E.F. et al. | 2004
- 530
-
Characterization of silicon carbide thin films prepared by VHF-PECVD technologyZhang, S. et al. | 2004
- 534
-
Two-photon optical absorption in amorphous materialsTanaka, Keiji et al. | 2004
- 539
-
Real-time in situ measurements of photoinduced volume changes in chalcogenide glassesIkeda, Y. et al. | 2004
- 543
-
Ab initio theory calculations of the electronic structure of nc-As2S3 and GeS2: an intrinsic mechanism for reversible photo-darkeningMowrer, T. et al. | 2004
- 548
-
Acceleration of photodarkening under dc electric field in amorphous As2Se3 filmsShimakawa, K. et al. | 2004
- 552
-
Local structure resulting from photo and thermal diffusion of Ag in Ge-Se thin filmsMitkova, M. et al. | 2004
- 557
-
Photo-induced volume changes in selenium. Tight-binding molecular dynamics studyHegedüs, J. et al. | 2004
- 561
-
Photo-induced transformations in chalcogenide nanocomposite layersKikineshi, A. et al. | 2004
- 565
-
Crystallization behavior and structure of amorphous Ge15Te85 and Ge20Te80 alloysHoyer, W. et al. | 2004
- 569
-
Density of states in the mobility gap of stabilized a-Se from electron time-of-flight photocurrent analysisKoughia, K.V. et al. | 2004
- 574
-
Structural and photostructural properties of chalcogenide glassesNelson, C.B. et al. | 2004
- 579
-
Composition dependence of diffusion in liquid silver chalcogenidesAniya, M. et al. | 2004
- 582
-
AES study of ion-selective membranes based on chalcogenide glassesTomova, R. et al. | 2004
- 586
-
The electronic structure of oligothiophenesdos Santos, M.C. et al. | 2004
- 590
-
Electrical properties of polymeric light-emitting diodesSantos, L.F. et al. | 2004
- 595
-
Pentacene thin film transistors on large area compatible gate dielectricsKnipp, D. et al. | 2004
- 599
-
Electrical characterization of ITO-CuPc-Al diodes using temperature dependent capacitance spectroscopy and I-V measurementsReis, F.T. et al. | 2004
- 603
-
Charge carrier mobility in doped disordered organic semiconductorsArkhipov, V.I. et al. | 2004
- 607
-
Localized state effects in polymer thin film transistorsStreet, R.A. et al. | 2004
- 612
-
Defect structural characterization of organic polymer layersOsiele, O.M. et al. | 2004
- 617
-
Pentacene thin-film transistors on polymeric gate dielectric: device fabrication and electrical characterizationPuigdollers, J. et al. | 2004
- 622
-
Electrically detected magnetic resonance of organic and polymeric light emitting diodesCastro, F.A. et al. | 2004
- 626
-
Thermally stimulated luminescence versus thermally stimulated current in organic semiconductorsArkhipov, V.I. et al. | 2004
- 630
-
Properties of ITO films deposited by plasma enhanced RTE on unheated polymer sheets - dependence on rf electrode distance from substratesNunes de Carvalho, C. et al. | 2004
- 634
-
Thin films of synthetic melaninDezidério, S.N. et al. | 2004
- 639
-
Basic efficiency limits, recent experimental results and novel light-trapping schemes in a-Si:H, (micro)c-Si:H and 5micromorph tandem' solar cellsShah, Arvind V. et al. | 2004
- 646
-
Doping properties of boron-doped microcrystalline silicon from B2H6 and BF3: material properties and solar cell performanceMatsui, Takuya et al. | 2004
- 651
-
Growth and properties of amorphous Ge:H solar cellsZhu, Jianhua et al. | 2004
- 655
-
Tandem solar cells deposited using hot-wire chemical vapor depositionvan Veen, M.K. et al. | 2004
- 659
-
Control of doped layers in p-i-n microcrystalline solar cells fully deposited with HWCVDFonrodona, M. et al. | 2004
- 663
-
17% efficiency heterostructure solar cell based on p-type crystalline siliconTucci, M. et al. | 2004
- 668
-
Helium versus hydrogen dilution in the optimization of polymorphous silicon solar cellsTchakarov, S. et al. | 2004
- 673
-
Study of enhanced light scattering in microcrystalline silicon solar cellsKrc, J. et al. | 2004
- 677
-
Calculation of the position-dependent inner collection efficiency in PIN solar cells using an electrical-optical modelDutta, U. et al. | 2004
- 682
-
Crystal growth of polycrystalline silicon thin films for solar cells evaluated by scanning probe microscopyMuhida, R. et al. | 2004
- 686
-
Modeling a-Si:H p-i-n solar cells with the defect pool modelKlimovsky, E. et al. | 2004
- 690
-
Argon dilution of silane as an alternative to hydrogen dilution for stable and high efficiency silicon thin films solar cellsChaudhuri, P. et al. | 2004
- 694
-
Optimization of protocrystalline silicon p-type layers for amorphous silicon n-i-p solar cellsFerreira, G.M. et al. | 2004
- 698
-
Light-soaking stability of silicon thin film solar cells using alternately hydrogenated dilution methodIto, M. et al. | 2004
- 702
-
Recombination in (micro)c-Si:H pin solar cellsLips, K. et al. | 2004
- 706
-
Silicon heterojunction solar cells with microcrystalline emitterSummonte, Caterina et al. | 2004
- 710
-
Digital-lithographic processing for thin-film transistor array fabricationWong, William S. et al. | 2004
- 715
-
Fusion of a-Si:H sensor technology with microfluidic bioanalytical devicesKamei, Toshihiro et al. | 2004
- 720
-
Evolution of nanocrystalline silicon thin film transistor channel layersCheng, I.-Chun et al. | 2004
- 725
-
a-Si:H alloy for stress sensor applicationCaputo, D. et al. | 2004
- 729
-
A novel low noise hydrogenated amorphous silicon pixel detectorMoraes, D. et al. | 2004
- 732
-
Field-effect mobility of amorphous silicon thin-film transistors under strainGleskova, H. et al. | 2004
- 736
-
High voltage photoconductive switches of amorphous silicon for electroactive polymer actuatorsLacour, S.P. et al. | 2004
- 740
-
High mobility top-gate thin film transistors fabricated with poly-Si1-xGex thin films on glass substrateZhang, J.J. et al. | 2004
- 744
-
IR bolometers based on amorphous silicon germanium alloysGarcía, M. et al. | 2004
- 749
-
UV-visible sensors based on polymorphous siliconGuedj, C. et al. | 2004
- 754
-
Optically addressed read-write device based on tandem heterostructureVieira, M. et al. | 2004
- 758
-
Thin film transistors on large single crystalline regions of silicon induced by cw laser crystallizationSaboundji, A. et al. | 2004
- 762
-
Amorphous silicon junction field-effect transistor with low pinch-off voltage for analog applicationsCaputo, D. et al. | 2004
- 766
-
Modeling of reverse bias dark currents in pin structures using amorphous and polymorphous siliconTchakarov, S. et al. | 2004
- 772
-
Dynamic properties of ultraviolet sensitive detectorsStiebig, H. et al. | 2004
- 776
-
Bias enhanced sensitivity in amorphous-porous silicon heterojunction gas sensorsTucci, M. et al. | 2004
- 780
-
Study of capacitance in hydrogenated amorphous silicon phototransistors for imaging arraysTucci, M. et al. | 2004
- 784
-
Microcrystalline silicon p-i-n photodetectors for telecommunications and photovoltaic applicationsSummonte, C. et al. | 2004
- 788
-
Membranes of SiOxNy with 3D topography formed by PECVD for MEMS applicationsLopes, A.T. et al. | 2004
- 793
-
Novel micro interferometer for length measurementsStiebig, H. et al. | 2004
- 797
-
Properties of a-Si:H TFTs using silicon carbonitride as dielectricLavareda, G. et al. | 2004
- 802
-
High electric field response of wide bandgap a-Si:H photodiodes probed by transient current measurementsSugawara, Takuya et al. | 2004
- 806
-
High field-effect mobility zinc oxide thin film transistors produced at room temperatureFortunato, E. et al. | 2004
- 810
-
Effect of an interfacial oxide layer in the annealing behaviour of Au-a-Si:H MIS photodiodesÁguas, H. et al. | 2004
- 814
-
Degradation of particle detectors based on a-Si:H by 1.5 Mev He4 and 1 MeV protonsSchwarz, R. et al. | 2004
- 819
-
Author Index| 2004
- 830
-
Subject Index| 2004
-
Contents (+ ContentsDirect on the final page)| 2004
-
Editorial board| 2004
-
ForewordChambouleyron, Ivan et al. | 2004