Semiconductor Lasers - High-Performance 640-nm-Range GaInP-AlGaInP Lasers Based on the Longitudinal Photonic Bandgap Crystal With Narrow Vertical Beam Divergence (Englisch)
- Neue Suche nach: Maximov, M.V.
- Neue Suche nach: Maximov, M.V.
- Neue Suche nach: Shernyakov, Y.M.
- Neue Suche nach: Novikov, I.I.
- Neue Suche nach: Kuznetsov, S.M.
- Neue Suche nach: Karachinsky, L.Y.
- Neue Suche nach: Gordeev, N.Y.
- Neue Suche nach: Kalosha, V.P.
- Neue Suche nach: Shchukin, V.A.
- Neue Suche nach: Ledentsov, N.N.
In:
IEEE journal of quantum electronics
;
41
, 11
; 1341-1348
;
2005
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Semiconductor Lasers - High-Performance 640-nm-Range GaInP-AlGaInP Lasers Based on the Longitudinal Photonic Bandgap Crystal With Narrow Vertical Beam Divergence
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Beteiligte:Maximov, M.V. ( Autor:in ) / Shernyakov, Y.M. / Novikov, I.I. / Kuznetsov, S.M. / Karachinsky, L.Y. / Gordeev, N.Y. / Kalosha, V.P. / Shchukin, V.A. / Ledentsov, N.N.
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Erschienen in:IEEE journal of quantum electronics ; 41, 11 ; 1341-1348
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsort:New York, NY
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Erscheinungsdatum:2005
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ISSN:
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ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 33.38 / 53.75
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Klassifikation:
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Datenquelle:
Inhaltsverzeichnis – Band 41, Ausgabe 11
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