HgCdTe infrared diode lasers grown by MBE (Englisch)
- Neue Suche nach: Arias, J.M.
- Neue Suche nach: Arias, J.M.
- Neue Suche nach: Zandian, M.
- Neue Suche nach: Zucca, R.
- Neue Suche nach: Singh, J.
In:
Semiconductor science and technology
;
8
, 1
; 255-260
;
1993
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:HgCdTe infrared diode lasers grown by MBE
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Beteiligte:
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Erschienen in:Semiconductor science and technology ; 8, 1 ; 255-260
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Verlag:
- Neue Suche nach: IOP Publ.
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Erscheinungsort:Bristol
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Erscheinungsdatum:1993
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ISSN:
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ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 275/3475/5670
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Schlagwörter:
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Klassifikation:
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Datenquelle:
Inhaltsverzeichnis – Band 8, Ausgabe 1
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Silicon solar cells: evolution, high-efficiency design and efficiency enhancementsM A Green et al. | 1993
- 1
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Prospects for the future of narrow bandgap materialsMcGill, T.C. et al. | 1993
- 6
-
Properties of Sn-Ge superlatticesAbstreiter, G. et al. | 1993
- 9
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Structural studies of natural superlattices in group III-V alloy epitaxial layersNorman, A.G. et al. | 1993
- 13
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Spatial correlations of DX charges and electron mobility in AlxGa1-xAsP L Coz / C Ghezzi / A Parisini et al. | 1993
- 16
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High-magnetic-field studies of HgSe(Fe)Ortenberg, M.von et al. | 1993
- 20
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The probability of phonon decay of excited donor states as a function of chemical shiftA A Gribakina / G F Gribakin / V K Ivanov / V A Kharchenko et al. | 1993
- 22
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The band structure of mixed-crystal Hg1 - xFexSeSkierbiszewski, C. et al. | 1993
- 25
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Temperature-dependent scaling and current-dependent non-ohmic behaviour between integer quantum Hall plateauxG Nachtwei / C Breitlow / A Jaeger / P Svoboda / P Streda / M Cukr / L Bliek / F -J Ahlers / H Schlegel et al. | 1993
- 26
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Longitudinal relaxation time due to RKKY coupling in mixed-valence HgFeSeWilamowski, Z. et al. | 1993
- 30
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Hybridization-mediated spin-dependent p-d interaction in semimagnetic semiconductors: experimental proofSzuszkiewicz, W. et al. | 1993
- 31
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Optical and electrical investigation of subband populations, mobilities and Fermi level pinning in delta-doped quantum wellsJ J Harris / R Murray / C T Foxon et al. | 1993
- 33
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Iron doping: a tool to improve the electrical properties of Hg1-xZnxSeDobrowolski, W. et al. | 1993
- 37
-
High-temperature magnetic freezing in (Cd1-xMnx)3As2Lähderanta, E. et al. | 1993
- 39
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The low-temperature conductivity of etched quantum wiresA R Long / M Rahman / I K MacDonald / M Kinsler / S P Beaumont / C D W Wilkinson / C R Stanley et al. | 1993
- 40
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Why various types of donor can either enhance or reduce electron mobility in narrow-gap semiconductorsSkierbiszewski, C. et al. | 1993
- 44
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Anisotropy of the magnetic interactions in HgFeSeWilamowski, Z. et al. | 1993
- 45
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The space-charge region around a metallic platelet in a semiconductorC Donolato et al. | 1993
- 48
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Novel magnetotransport and magneto-optical processes in semimetallic HgTe-CdTe superlatticesHoffman, C.A. et al. | 1993
- 50
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Ballistic scattering of electrons by a parabolic cylinder repeller in two-dimensional structuresG J Papadopoulos et al. | 1993
- 56
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Interface properties of passivated HgZnTeK H Khelladi / D Lemoine / S Rolland / R Granger / R Triboulet et al. | 1993
- 58
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Pressure dependence of infrared photoluminescence spectra from HgTe-CdTe superlatticesCheong, H.M. et al. | 1993
- 62
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Infrared photoluminescence on molecular beam epitaxially grown Hg1-xCdxTe layersKraus, M.M. et al. | 1993
- 63
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A proposal of a method for analysing the leakage characteristics of 1.3 micron semiconductor buried heterostructure lasersUmebu, Itsuo et al. | 1993
- 63
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A proposal of a method for analysing the leakage characteristics of 1.3 mu m semiconductor buried heterostructure lasersI Umebu et al. | 1993
- 63
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A proposal of a method of analysing the leakage characteristics of 1.3um semiconductor buried heterostructure lasersUmebu, I. et al. | 1993
- 63
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A proposal of a method for analysing the leakage characteristics of 1.3 m m semiconductor buried heterostructure lasersUmebu, I. et al. | 1993
- 67
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Atomic relaxation and electronic states in ultrathin Ge/ZnSe superlatticesA C Ferraz / G P Srivastava et al. | 1993
- 73
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Light and field control of light in polariton-active metal-semiconductor structures: interface polariton optoelectronicsN A Savost'yanova / V B Sandomirsky et al. | 1993
- 80
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TE and TM optical gains in AlGaAs/GaAs single-quantum-well lasersE A Avrutin / I E Chebunina / I A Eliachevitch / S A Gurevich / M E Portnoi / G E Shtengel et al. | 1993
- 88
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Photoluminescence lineshape of narrow n-type modulation-doped quantum wellsR Kuchler / G Abstreiter / G Bohm / G Weimann et al. | 1993
- 92
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Luminescence from porous siliconX Chen / D Uttamchandani / C Trager-Cowan / K P O'Donnell et al. | 1993
- 97
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Photochemical etching of n-InP: observations on photon efficiency and saturationT D Lowes / D T Cassidy et al. | 1993
- 101
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Infrared reflection and transmission of undoped and Si-doped InAs grown on GaAs by molecular beam epitaxyY B Li / R A Stradling / T Knight / J R Birch / R H Thomas / C C Phillips / I T Ferguson et al. | 1993
- 112
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Impurity avalanche breakdown in n-type InP layersJ Oswald / F Karel / O Petricek / N Schmid et al. | 1993
- 116
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Technological, structural and morphological aspects of screen-printed ITO used in ITO/Si type structureB Bessais / N Mliki / R Bennaceur et al. | 1993
- 116
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Technology, structural and morphological aspects of screen-printed ITO used in ITO/Si type structureBessais, B. / Mliki, N. / Bennaceur, R. et al. | 1993
- 123
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Electron states in double-channel back-gated HEMT structuresP M Owen / M Pepper et al. | 1993
- 127
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Effects of isotope disorder on phonons in germanium determined from bound exciton luminescenceG Davies / J Hartung / V Ozhogin / K Itoh / W L Hansen / E E Haller et al. | 1993
- 255
-
HgCdTe infrared diode lasers grown by MBEArias, J.M. et al. | 1993
- 261
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Optical spectroscopy of CdHgTe-CdTe quantum wells and superlatticesMonterrat, E. et al. | 1993
- 266
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Type conversion of CdxHg1-xTe grown by liquid phase epitaxyDutton, D.T. et al. | 1993
- 270
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As diffusion in Hg1-xCdxTe for junction formationBubulac, L.O. et al. | 1993
- 276
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Interdiffusion studies in CdTe-HgTe superlatticesTardot, A. et al. | 1993
- 281
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Assessment of doped CdxHg1-xTe structures using bevelled sectionsGale, I.G. et al. | 1993
- 286
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Cavity structure effects on CdHgTe photopumped heterostructure lasersBleuse, J. et al. | 1993
- 289
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Performance of p+-n HgCdTe photodiodesRogalski, A. et al. | 1993
- 293
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Removal of oxygen and reduction of carbon contamination on (100) Cd0.96Zn0.04Te substratesWu, Y.S. et al. | 1993
- 296
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Infrared absorption in HgCdTe-CdTe single quantum well structuresSizmann, R. et al. | 1993
- 300
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Mid-infrared picosecond spectroscopy of MBE indium arsenide epilayers at 300 KVodopyanov, K.L. et al. | 1993
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Ultrafast recombination processes in lead chalcogenide semiconductors studied via picosecond optical nonlinearitiesKlann, R. et al. | 1993
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Nuclear spin polarization in InSb detected by spin-Hip Raman gain spectroscopyHofmann, W. et al. | 1993
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Crossed-field hot-hole cyclotron resonance in p-Ge: non-parabolic and quantum effectsKremser, C. et al. | 1993
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RII spectroscopy of trap levels in bulk and LPE Hg1-XCdXTeLittler, C.L. et al. | 1993
- 322
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Characterization of free carriers in IV-VI laser materials from infrared reflectivityKushev, D.B. et al. | 1993
- 326
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Photo-Hall measurements in inhomogeneous samples of arbitrary shapeHughes, J.I.L. et al. | 1993
- 330
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Interband and intraband contributions to refractive index in the new PbSe-based narrow-gap semiconductorsHerrmann, K.H. et al. | 1993
- 334
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Molecular beam epitaxy of laterally structured lead chalcogenides for the fabrication of buried heterostructure lasersLambrecht, A. et al. | 1993
- 337
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Thermal-mismatch strain relaxation mechanisms in heteroepitaxial lead chalcogenide layers on Si substratesZogg, H. et al. | 1993
- 342
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Imaging ion-bombarded III-V semiconductor surfaces: a scanning tunnelling microscopy study of InSb(100)Schweitzer, M.O. et al. | 1993
- 345
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- 349
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Lead telluride-based photodetectors: a new approachAkimov, B.A. et al. | 1993
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Magnetic-field-induced localization in Pb1-xSnxTe(In)Khokhlov, D.R. et al. | 1993
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Structural dependence of the optical absorption in TlBiSe2 thin films near the fundamental absorption edgeMitsas, C.L. et al. | 1993
- 360
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The electrical characteristics of Pb1-xEuxSe homojunctionsXu, J. et al. | 1993
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Interface energy spectrum of real PbTe-SnTe heterojunctionsLitvinov, V.I. et al. | 1993
- 367
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Piezoelectric effects in superlatticesLakrimi, M. et al. | 1993
- 373
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Interband and intersubband transitions in indium arsenide doping superlattices studied by absorption, nonlinear absorption and photoconductivity spectroscopiesPh llips, C.C. et al. | 1993
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Devices and desires in the 2-4 mm region based on antimony-containing III-V heterostructures grown by MOVPEAardvark, A. et al. | 1993
- 386
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A heterojunction minority carrier barrier for InSb devicesAshley, T. et al. | 1993
- 390
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Exclusion effects revisited: non-traditional use of narrow-gap semiconductorsMalyutenko, V.K. et al. | 1993
- 396
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Damage-induced changes in the electronic properties of InSb(100): implications for surface preparationYuen, W.T. et al. | 1993
- 400
-
Device physics of quantum well infrared photodetectorsLevine, B.F. et al. | 1993
- 406
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Current conduction in bound-to-miniband transition III-V multiquantum well-superlattice infrared photodetectorsLi, Sheng S. et al. | 1993
- 412
-
Responsivity and thermionic current in asymmetric quantum well infrared detectorsBrandel, A. et al. | 1993
- 417
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Stimulated emission due to the magnetoelectric photoeffect in narrow-gap semiconductors at the quantum limitMorimoto, T. et al. | 1993
- 424
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Narrow-gap semiconductor magnetic field sensors and applicationsHeremans, J. et al. | 1993
- 431
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Superconducting structures on narrow-gap semiconductorsTakayanagi, H. et al. | 1993
- 435
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Review of nipi structures for photon detectionOswald, J. et al. | 1993
- 443
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MCT versus quantum well structures for IR detectorsShen, S.C. et al. | 1993
- 447
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Low-temperature switching in PbTe(Ga) at high electric fieldsAkimov, B.A. et al. | 1993
- 451
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The state of the art in the physics and technology of narrow gap semiconductorsLandwehr, G. et al. | 1993
-
The effect of interface bond type on the structural and optical properties of GaSb/InAs superlatticesWaterman, J. R. / Shanabrook, B. V. / Wagner, R. J. / Yang, M. J. et al. | 1993
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Investigation of Sb/GaSb multilayer structures for potential application as an indirect narrow-bandgap materialGolding, T. D. / Dura, J. A. / Wang, H. / Zborowski, J. T. et al. | 1993
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Field-effect controlled resonant interband tunnelling in electron surface layers on InAs and In~0~.~5~3Ga~0~.~4~7AsFoste, B. / Kunze, U. / Swinge, G. / Schlachetzki, A. et al. | 1993
-
The effect of Landau quantization on cyclotron resonance in a non-parabolic quantum wellScriba, J. / Wixforth, A. / Kotthaus, J. P. / Bolognesi, C. R. et al. | 1993
-
Fourier transform photoluminescence excitation spectroscopy of medium-bandgap HG~1~_~xCd~xTe and InSbFuchs, F. / Kheng, K. / Schwarz, K. / Koidl, P. et al. | 1993
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The optical absorption coefficient of HgTe-CdTe superlattices - theory and experimentBangert, E. / Boege, P. / Latussek, V. / Landwehr, G. et al. | 1993
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Optical analysis of InAs heterostructures grown by migration-enhanced epitaxyInoue, M. / Yano, M. / Furuse, J. / Nasu, N. et al. | 1993
-
RII spectoroscopy of trap levels in bulk and LPE Hg~1~_~xCd~xTeLittler, C. L. / Song, X. N. / Yu, Z. / Elkind, J. L. et al. | 1993
-
The MOVPE growth and characterization of Hg~1~_~xMn~xTeFunaki, M. / Lewis, J. E. / Hallam, T. D. / Li, C. et al. | 1993
-
Electron mobility in p-type epitaxially grown Hg~1~_~xCd~xTeGordon, N. T. / Barton, S. / Capper, P. / Jones, C. L. et al. | 1993
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The study of far-infrared phonon spectra on HG~1~_~xCd~xTeChu, J. H. / Shen, S. C. et al. | 1993
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Magneto-optic and magnetotransport study of InAs/Ga~1~_~xIn~xSb superlatticesOmaggio, J. P. / Wagner, R. J. / Meyer, J. R. / Hoffman, C. A. et al. | 1993
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High-temperature magnetic freezing in (Cd~1~_~xMn~x)xAs~2Lahderanta, E. / Laiho, R. / Lashkul, A. V. / Makinen, A. et al. | 1993
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Band offsets in Eu-containing lead chalcogenides and lead chalcogenide superlattices from spectroscopic dataHerrmann, K. H. / Auth, J. / Mollmann, K.-P. / Tomm, J. W. et al. | 1993
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Shubnikov-de Haas oscillations in Cd~3(As~xP~1~_~x)~2Nateprov, A. N. / Laue, I. / Von Ortenberg, M. / Arushanov, E. K. et al. | 1993
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Doping studies in MOVPE-grown Cd~xHg~1~_~xTeMaxey, C. D. / Gale, I. G. / Clegg, J. B. / Whiffin, P. A. C. et al. | 1993
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Properties of HgCDTe layers grown by isothermal vapour phase epitaxy at high pressureMitra, P. / Schimert, T. R. / Case, F. C. / Barnes, S. L. et al. | 1993
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Optical properties of InAs quantum wells emitting between 0.9 um and 2.5 umTournie, E. / Brandt, O. / Ploog, K. H. et al. | 1993
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Energy spectrum in quantum dots of IV-VI narrow-gap semiconductorsDugaev, V. K. / Litvinov, V. I. / Petrov, P. P. / Mironov, O. A. et al. | 1993
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Observation of magnetophonon resonance oscillations in open-gap Hg~1~_~x~_~yCd~xMnTe grown by LPETakita, K. / Kuroda, S. / Kwon, H. et al. | 1993
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Free-carrier magneto-absorption in HgZnTe-CdTe and HgTe-CdTe superlatticesManasses, J. / Guldner, Y. / Vieren, J. P. / Faurie, J. P. et al. | 1993
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Exclusion effects revised: non-traditional use of narrow-gap semiconductorsMalyutenko, V. K. et al. | 1993
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Insulator-metal transition in HgTe in crossed magnetic and electric fieldsPfeffer, P. / Zawadzki, W. et al. | 1993
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Magnetotransport investigations at InSb and HG~1~_~xCd~xTe bicrystals in tilted magnetic fieldsNachtwei, G. / Bassom, N. J. / Kraak, W. / Nicholas, R. J. et al. | 1993
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Phonon-assisted interband magneto-optical transitions in HgCdMnTeZawadzki, W. / Dudziak, E. / Jedral, L. Z. / Placzek-Popko, E. et al. | 1993
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Magnetic-field induced localization in Pb~1~_~xSb^xTe(In)Khokhlov, D. R. / Ivanchik, I. I. / De Visser, A. / Nikorich, A. V. et al. | 1993
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Characterization of free carriers in IV-VI laser materials form infrared reflectivityKushev, D. B. / Zheleva, N. N. et al. | 1993
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Techniques for improving the control of properties of liquid phase epitaxial (CdHg)TeAstles, M. G. / Shaw, N. / Blackmore, G. et al. | 1993
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InAs monolayers and quantum dots in a crystalline GaAs matrixPloog, K. H. / Brandt, O. et al. | 1993
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Magneto-optical properties of quantum dots in IsSbZawadzki, W. / Kubisa, M. et al. | 1993
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Kinetic confinement of charge carriers in heterostructures and accumulation layersKubisa, M. / Zawadzki, W. et al. | 1993
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Photoconductivity in AISb/InAs quantum wellsGauer, C. / Seriba, J. / Wixforth, A. / Kotthaus, J. P. et al. | 1993
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Exchange interaction in semimagnetic IV-VI multi-quantum-well structuresGeist, F. / Pascher, H. / Frank, N. / Bauer, G. et al. | 1993
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Carrier-induced magnetic properties in small-gap semiconductorsEggenkamp, P. J. T. / Story, T. / Swagten, H. J. M. / Vennix, C. W. H. M. et al. | 1993
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Structural dependence of the optical absorption in TIBiSe~2 thin films near the fundamental absorption edgeMitsas, C. L. / Polychroniadis, E. K. / Siapkas, D. I. et al. | 1993
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Devices and desires in the 2-4 um region based on antimony-containing III-V heterostructures grown by MOVPEAardvark, A. / Allogho, G. G. / Bougnot, G. / David, J. P. R. et al. | 1993
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Molecular beam epitaxial growth of (100) Hg~0~.~8Cd~9~,~2Te on CD~0~.~9~6Zn~0~.~0~4TeHe, L. / Becker, C. R. / Bicknell-Tassius, R. N. / Scholl, S. et al. | 1993
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Influence of heavy-hole scattering on the magnetotransport behaviour of p-type zeor-gap Hg~1~_~xMn~xTeZheng, G. / Shen, J. / Guo, S. / Tang, D. et al. | 1993
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Subbands in inversion laters on NGS for E~g~a~p->OFreytag, B. / Rossler, U. / Pankratov, O. et al. | 1993
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Transient and steady-state lifetime measurements on epitaxially grown Cd~xHg~1~_~xTeBarton, S. / Capper, P. / McAllister, A. / Jones, C. L. et al. | 1993
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Narrow CdTe/CdHgTe interdiffused structuresLusson, A. / Druilhe, R. / Marfaing, Y. / Rzepka, E. et al. | 1993
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Adaptation of deep level transient spectroscopy for narrow bandgap semiconductor materialsZachman, S. J. / Finkman, E. / Bahir, G. et al. | 1993
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Mesoscopic phenomena in diluted magnetic semiconductors| 1993
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Nuclear spin polarization in InSb detected by spin-flip Raman gain spectroscopyHoffmann, W. / Pascher, H. / Denninger, G. et al. | 1993
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Electronic band structure of far-infrared Ga~1~_~xIn~xSb/InAs superlatticesMiles, R. H. / Schulman, J. N. / Chow, D. H. / McGill, T. C. et al. | 1993
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Electrical properties of the anodic oxide-HgZnTe interfaceEsquivias, I. / Baars, J. / Brink, D. / Eger, D. et al. | 1993
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Study of extended defects in low n-type HgCdTe using Hall measurementsBerchenko, N. N. / Budzhak, J. S. / Kurbanov, K. R. / Sasvari, G. et al. | 1993
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Precision of the Hall quantization in a naturally occurring two-dimensional system - HgCdMnTe bicrystalsGrabecki, G. / Wittlin, A. / Dietl, T. / Teunissen, P. A. A. et al. | 1993
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Far infrared spectroscopy in strained AlSb/InAs/AISb quantum wellsYang, M. J. / Lin-Chung, P. J. / Wagner, R. J. / Waterman, J. R. et al. | 1993