Real-time monitoring and control during MOVPE growth of CdTe using multiwavelength ellipsometry (Englisch)
- Neue Suche nach: Johs, B.
- Neue Suche nach: Johs, B.
- Neue Suche nach: Doerr, D.
- Neue Suche nach: Pittal, S.
- Neue Suche nach: Bhat, I.B.
- Neue Suche nach: Dakshinamurthy, S.
In:
Thin solid films
;
233
, 1-2
; 293-296
;
1993
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Real-time monitoring and control during MOVPE growth of CdTe using multiwavelength ellipsometry
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Beteiligte:
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Erschienen in:Thin solid films ; 233, 1-2 ; 293-296
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Erscheinungsort:Amsterdam [u.a.] Elsevier
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Erscheinungsdatum:1993
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ISSN:
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ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 33.68
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 535/3485
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Schlagwörter:
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Klassifikation:
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Datenquelle:
Inhaltsverzeichnis – Band 233, Ausgabe 1-2
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Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
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New developments in spectroellipsometry: the challenge of surfacesAspnes, D.E. et al. | 1993
- 9
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Reflectance anisotropy spectroscopy: a new method for semiconductor surface chemistry investigationBerkovits, V.L. / Paget, D. et al. | 1993
- 14
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Optical anisotropy of Ge(001)Wormeester, H. / Wentink, D.J. / de Boeij, P.L. / van Silfhout, A. et al. | 1993
- 19
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Hydrogen-terminated Si(100) surfaces investigated by reflectance anisotropy spectroscopyMüller, A.B. / Reinhardt, F. / Resch, U. / Richter, W. / Rose, K.C. / Rossow, U. et al. | 1993
- 24
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Optical anisotropies of Ag single crystalsBorensztein, Y. / Tadjeddine, A. / Mochan, W.L. / Tarriba, J. / Barrera, R.G. et al. | 1993
- 28
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Full microscopic treatment of the optical response of the Si(100) 2 x 1 surfaceWijers, C.M.J. et al. | 1993
- 28
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Full microscopic treatment of the optical response of the Si(100) 2 × 1 surfaceWijers, C.M.J. / Poppe, G.P.M. / de Boeij, P.L. / Bekker, H.G. / Wentink, D.J. et al. | 1993
- 32
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Ellipsometry in electrochemistry: a spectrum of applicationsGreef, R. et al. | 1993
- 40
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The surface roughness and optical properties of high quality Si epitaxial layersNayar, V. / Pickering, C. / Pidduck, A.J. / Carline, R.T. / Leong, W.Y. / Robbins, D.J. et al. | 1993
- 46
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Ex situ variable angle spectroscopic ellipsometry studies of electron resonance etching of Hg~1~-~x Cd~x TeOrloff, G. J. / Woollam, J. A. / He, P. / McGahan, W. A. et al. | 1993
- 46
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Ex situ variable angle spectroscopic ellipsometry studies of electron cyclotron resonance etching of Hg1−xCdxTeOrloff, Glennis J. / Woollam, John A. / He, Ping / McGahan, William A. / McNeil, J.R. / Jacobson, R.D. / Johs, Blaine et al. | 1993
- 50
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Estimation of the quality of polished optical glass surfaces by spectral ellipsometryHrdina, Jiří et al. | 1993
- 53
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Experimental roughness excitation of surface electromagnetic waves and their detection by ellipsometryGauch, M. / Quentel, G. et al. | 1993
- 58
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Characterization of different conversion coatings on aluminium with spectroscopic ellipsometryDe Laet, J. / Vanhellemont, J. / Terryn, H. / Vereecken, J. et al. | 1993
- 63
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Anodic oxidation of aluminium in sulphuric acid monitored by ex-situ and in-situ spectroscopic ellipsometryKötz, R. / Schnyder, B. / Barbero, C. et al. | 1993
- 69
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Spectroscopic ellipsometry of carbon electrodes during electrochemical activationKötz, R. / Barbero, C. / Schnyder, B. / Haas, O. et al. | 1993
- 74
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Ellipsometry of iron hydrous oxide layers formed by potentiodynamic techniquesZerbino, J.O. / Bulhoes, O.L. / Juanto, S. / Miguez, M.I. / Vilche, J.R. / Arvia, A.J. et al. | 1993
- 77
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Ellipsometry and electron diffraction study of anodically formed Pd oxide layersBolzán, A.E. / Zerbino, J.O. / Macchi, E. / Arvia, A.J. et al. | 1993
- 82
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Ellipsometric study of hydrous gold oxide layers and gold surfaces resulting from their electroreductionVela, M.E. / Zerbino, J.O. / Arvia, A.J. et al. | 1993
- 86
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Effect of anisotropy on microellipsometry in the systemMichaelis, A. / Schultze, J.W. et al. | 1993
- 91
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Optical spectra of a conducting polymer (polymethyl-3-thiophene) at several stages of the electrodeposition processTian, C. / Jin, G. / Chao, F. / Costa, M. / Roger, J.P. et al. | 1993
- 96
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Applications of spectroscopic ellipsometry to microelectronicsIrene, E.A. et al. | 1993
- 112
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Modulated ellipsometry for characterization of multiple quantum wells and superlatticesZettler, J.-Th. / Mikkelsen, H. / Trepk, Th. / Leo, K. / Kurz, H. / Richter, W. et al. | 1993
- 117
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Ion-implantation-caused special damage profiles determined by spectroscopic ellipsometry in crystalline and in relaxed (annealed) amorphous siliconLohner, T. / Fried, M. / Gyulai, J. / Vedam, K. / Nguyen, N.V. / Hanekamp, L.J. / van Silfhout, A. et al. | 1993
- 122
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Temperature dependence of the dielectric function and interband critical points of AlAs obtained on an MBE grown layerGarriga, M. / Kelly, M. / Ploog, K. et al. | 1993
- 126
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In-situ dual-wavelength and ex-situ spectroscopic ellipsometry studies of strained SiGe epitaxial layers and multi-quantum well structuresPickering, C. / Carline, R.T. / Robbins, D.J. / Leong, W.Y. / Gray, D.E. / Greef, R. et al. | 1993
- 131
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Determination of porous silicon film parameters by polarized light reflectance measurementsBasmaji, P. / Bagnato, V.S. / Grivickas, V. / Surdutovich, G.I. / Vitlina, R. et al. | 1993
- 137
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Circular birefringence in zinc-blende-type semiconductorsEtchegoin, P. / Cardona, M. et al. | 1993
- 141
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Piezo-optical response of semiconductorsEtchegoin, P. / Kircher, J. / Cardona, M. et al. | 1993
- 145
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Spectroscopic ellipsometry: a useful tool to determine the refractive indices and interfaces of In0.52Al0.48As and In0.53AlxGa0.47 - xAs on InP in the wavelength range from 280 to 1900 nmDinges, H.W. / Burkhard, H. / Lösch, R. / Nickel, H. / Schlapp, W. et al. | 1993
- 148
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Determination of accurate critical-point energies, linewidths and line shapes from spectroscopic ellipsometry dataGarland, J.W. / Kim, Charles C. / Abad, H. / Raccah, P.M. et al. | 1993
- 153
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Si- and Ge-like features in the dielectric function of Sin Gem superlatticesJans, J.C. / Hollering, R.W.J. / Gravesteijn, D.J. / Fredriksz, C.W. et al. | 1993
- 158
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Spectroscopic ellipsometry of strained Si1-x Gex layersLíbezný, M. / Poortmans, J. / Caymax, M. / Van Ammel, A. / Kuběna, J. / Holý, V. / Vanhellemont, J. et al. | 1993
- 162
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Dielectric function of superlattices grown on GaAs substrates with different orientationLukeš, F. / Ploog, K. et al. | 1993
- 166
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Temperature dependence of the dielectric function of silicon using in situ spectroscopic ellipsometryVuye, G. / Fisson, S. / Nguyen Van, V. / Wang, Y. / Rivory, J. / Abelès, F. et al. | 1993
- 171
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Non-destructive characterization of III–V alloy multilayer structures using spectroscopic ellipsometryPickering, C. / Carline, R.T. / Garawal, N.S. / Stehlé, J.L. / Piel, J.P. / Blunt, R. / Kirby, P. et al. | 1993
- 176
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Thin epitaxial films of wide gap II–VI compounds studied by spectroscopic ellipsometryRossow, U. / Werninghaus, T. / Zahn, D.R.T. / Richter, W. / Horn, K. et al. | 1993
- 180
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Ellipsometric characterisation of InP-based quantum well structuresRossow, U. et al. | 1993
- 180
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Ellipsometric characterization of InP-based quantum well structuresRossow, U. / Krost, A. / Werninghaus, T. / Schatke, K. / Richter, W. / Hase, A. / Künzel, H. / Roehle, H. et al. | 1993
- 185
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Temperature dependence of the dielectric function and the interband critical-point parameters of GaPZollner, Stefan / Garriga, Miquel / Kircher, Jens / Humlíček, Josef / Cardona, Manuel / Neuhold, Georg et al. | 1993
- 189
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Detection and characterization of transient surface periodic structures formed during pulsed-laser annealing of semiconductor surfaces by ellipsometryBrink, D.J. / Smit, J.E. et al. | 1993
- 194
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Spectroscopic transmission ellipsometry studies of intersub-band transitions in As quantum wellsOzanyan, K.B. / Hunderi, O. et al. | 1993
- 194
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Spectroscopic transmission ellipsometry studies of intersub-band transitions in n-GaAs-AI0.3Ga0.7As quantum wellsOzanyan, K.B. et al. | 1993
- 199
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Non-destructive depth profiling of silicon ion implantation induced damage in silicon (100) substratesLynch, S. / Murtagh, M. / Crean, G.M. / Kelly, P.V. / O'Connor, M. / Jeynes, C. et al. | 1993
- 203
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Spectroscopic ellipsometry study of the relaxation state of amorphous siliconReitano, R. / Grimaldi, M.G. / Baeri, P. / Borghesi, A. / Sassella, A. et al. | 1993
- 207
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An ellipsometric investigation of ion implanted siliconPopescu, Gabriela / Boca, Ioan et al. | 1993
- 210
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Optimization of the polycrystalline silicon-on-silicon dioxide characterization using spectroscopic ellipsometryAsinovsky, L.M. et al. | 1993
- 214
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Characterization of silicon on insulator multilayers using ex situ spectroscopic ellipsometry and in situ monochromatic ellipsometry during plasma etchingGreef, R. / Gray, D.E. / Dartnell, N.J. / Zhu, J. / Lynch, S. / Crean, G.M. et al. | 1993
- 218
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Spectroellipsometry characterization of directly bonded silicon-on-insulator structuresEl-Ghazzawi, M.E. / Saitoh, T. / Hori, N. / Sakai, A. / Oka, T. et al. | 1993
- 223
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Study of thin films of transparent electronic materials by phase-modulated spectroellipsometryCampmany, J. / Canillas, A. / Andújar, J.L. / Costa, J. / Bertran, E. et al. | 1993
- 227
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Ellipsometric characterization of hydrogen-rich oxynitride filmsBorghesi, A. / Sassella, A. / Rojas, S. et al. | 1993
- 231
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Investigation of the system InSbSiO2 by spectroscopic multiangle ellipsometryRussev, S. / Valcheva, E. / Germanova, K. et al. | 1993
- 236
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Characterization of SiO2GaAs interface structures using spectroscopic ellipsometryWatanabe, Y. / Saitoh, T. / Miyazaki, M. / Suzuki, K. et al. | 1993
- 240
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The influence of temperature and pressure on the structure of remote plasma enhanced chemically vapour deposited SiO2 investigated by spectroscopic ellipsometryGruska, B. et al. | 1993
- 240
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The influence of temperature and pressure on the structure of remote plasma enhanced chemically vapor deposited SiO2 investigated by spectroscopic ellipsometryGruska, B. / Wandel, K. et al. | 1993
- 244
-
Real time spectroscopic ellipsometry for characterization of nucleation, growth, and optical functions of thin filmsCollins, R.W. / An, Ilsin / Nguyen, H.V. / Lu, Yiwei et al. | 1993
- 253
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Electron cyclotron resonance etching of semiconductor structures studied by in-situ spectroscopic ellipsometryNafis, Suraiya / Ianno, Natale J. / Snyder, Paul G. / McGahan, William A. / Johs, Blaine / Woollam, John A. et al. | 1993
- 256
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Ellipsometry study of the adhesion of dielectric thin films on polymer substratesVallon, S. / Drévillon, B. / Rostaing, J.C. et al. | 1993
- 260
-
Study of CaF2 growth on Si, a-Si O2 by in-situ spectroscopic ellipsometryRivory, J. / Fisson, S. / Nguyen Van, V. / Vuye, G. / Wang, Y. / Abelés, F. / Yu-Zhang, K. et al. | 1993
- 264
-
Spectroellipsometric study of the growth and phase transitions of a two-dimensional metal: Pb on Ge(III)Abraham, M. / Lelay, G. et al. | 1993
- 264
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Spectroellipsometric study of the growth and phase transitions of a two-dimensional metal: Pb on Ge(111)Abraham, M. / LeLay, G. et al. | 1993
- 268
-
In situ ellipsometry of soft x-ray multilayer fabricationYamamoto, Masaki / Arai, Akira et al. | 1993
- 272
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Analysis of critical points in semiconductor optical functions from in situ and real-time spectroscopic ellipsometryNguyen, Hien V. / Collins, R.W. et al. | 1993
- 276
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Hydrogen diffusion and reaction processes in thin films investigated by real time spectroscopic ellipsometryAn, Ilsin / Collins, R.W. / Nguyen, Hien V. / Vedam, K. / Witham, H.S. / Messier, R. et al. | 1993
- 281
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Study by real time ellipsometry of the growth of amorphous and microcrystalline silicon thin films combining glow discharge decomposition and UV light irradiationLayadi, N. / Roca i Cabarrocas, P. / Yakovlev, V. / Drévillon, B. et al. | 1993
- 286
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Ellipsometry study of non-uniform lateral growth of ZnO thin filmsPittal, Shakil / Snyder, Paul G. / Ianno, N.J. et al. | 1993
- 289
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Ellipsometric studies on the oxidation of thin copper filmsRauh, M. / Wiβmann, P. / Wölfel, M. et al. | 1993
- 293
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Real-time monitoring and control during MOVPE growth of CdTe using multiwavelength ellipsometryJohs, Blaine / Doerr, Dave / Pittal, Shakil / Bhat, I.B. / Dakshinamurthy, S. et al. | 1993
- 297
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In situ ellipsometric study of the influence of powder formation on the initial growth of glow discharge a−Si:HSchmidt, U.I. / Schröder, B. / Oechsner, H. et al. | 1993
- 301
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The fastest real time spectroscopic ellipsometry: applications and limitations for in situ and quality controlPiel, J.-P. / Stehle, J.-L. / Thomas, O. et al. | 1993
- iii
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Editorial Board| 1993
- ix
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Preface| 1993
- x
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Organization| 1993