Silicon Devices - Revised Stability Analysis of the Nonlinear Poisson Scheme in Self-Consistent Monte Carlo Device Simulations (Englisch)
- Neue Suche nach: Palestri, P.
- Neue Suche nach: Palestri, P.
- Neue Suche nach: Barin, N.
- Neue Suche nach: Esseni, D.
- Neue Suche nach: Fiegna, C.
In:
IEEE transactions on electron devices
;
53
, 6
; 1443-1451
;
2006
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:Silicon Devices - Revised Stability Analysis of the Nonlinear Poisson Scheme in Self-Consistent Monte Carlo Device Simulations
-
Beteiligte:
-
Erschienen in:IEEE transactions on electron devices ; 53, 6 ; 1443-1451
-
Verlag:
- Neue Suche nach: IEEE
-
Erscheinungsort:New York, NY
-
Erscheinungsdatum:2006
-
ISSN:
-
ZDBID:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Print
-
Sprache:Englisch
- Neue Suche nach: 53.50 / 53.00 / 52.50 / 54.20
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 770/5670
-
Schlagwörter:
-
Klassifikation:
-
Datenquelle:
Inhaltsverzeichnis – Band 53, Ausgabe 6
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1289
-
Compound Semiconductor Devices - Stress-Related Hydrogen Degradation of 0.1-mm InP HEMTs and GaAs PHEMTsBlanchard, R.R. et al. | 2006
- 1289
-
Stress-related hydrogen degradation of 0.1-/spl mu/m InP HEMTs and GaAs PHEMTsBlanchard, R.R. / del Alamo, J.A. et al. | 2006
- 1294
-
Compound Semiconductor Devices - Electrical Domains and Submillimeter Signal Generation in AlGaN-GaN SuperlatticesGordion, I. et al. | 2006
- 1294
-
Electrical domains and submillimeter signal generation in AlGaN/GaN superlatticesGordion, I. / Manasson, A. / Litvinov, V.I. et al. | 2006
- 1300
-
Improved and physics-based model for symmetrical spiral inductorsJi Chen, / Liou, J.J. et al. | 2006
- 1300
-
Materials Processing and Packaging - Improved and Physics-Based Model for Symmetrical Spiral InductorsChen, J. et al. | 2006
- 1310
-
Materials Processing and Packaging - SOI Technology for Radio-Frequency Integrated-Circuit ApplicationsYang, R. et al. | 2006
- 1310
-
SOI technology for radio-frequency integrated-circuit applicationsRong Yang, / He Qian, / Junfeng Li, / Qiuxia Xu, / Chaohe Hai, / Zhengsheng Han, et al. | 2006
- 1317
-
Metrics for performance benchmarking of nanoscale Si and carbon nanotube FETs including device nonidealitiesJie Deng, / Wong, H.-S.P. et al. | 2006
- 1317
-
Nanoelectronics - Metrics for Performance Benchmarking of Nanoscale Si and Carbon Nanotube FETs Including Device NonidealitiesDeng, J. et al. | 2006
- 1323
-
Determination of tunnel mass and physical thickness of gate oxide including poly-Si/SiO2 and Si/SiO2 interfacial transition LayersWatanabe, H. / Matsushita, D. / Muraoka, K. et al. | 2006
- 1323
-
Determination of tunnel mass and physical thickness of gate oxide including poly-Si/SiO/sub 2/ and Si/SiO/sub 2/ interfacial transition LayersWatanabe, H. / Matsushita, D. / Muraoka, K. et al. | 2006
- 1323
-
Nanoelectronics - Determination of Tunnel Mass and Physical Thickness of Gate Oxide Including poly-Si-SiO2 and Si-SiO2 Interfacial Transition LayersWatanabe, H. et al. | 2006
- 1331
-
Negative-bias temperature instability cure by process optimizationScarpa, A. / Ward, D. / Dubois, J. / van Marwijk, L. / Gausepohl, S. / Campos, R. / Kwang Ye Sim, / Cacciato, A. / Kho, R. / Bolt, M. et al. | 2006
- 1331
-
Reliability - Negative-Bias Temperature Instability Cure by Process OptimizationScarpa, A. et al. | 2006
- 1340
-
Characteristics and physical mechanisms of positive bias and temperature stress-induced drain current degradation in HfSiON nMOSFETsChien-Tai Chan, / Chun-Jung Tang, / Tahui Wang, / Wang, H.C.-H. / Tang, D.D. et al. | 2006
- 1340
-
Reliability - Characteristics and Physical Mechanisms of Positive Bias and Temperature Stress-Induced Drain Current Degradation in HfSiON nMOSFETsChan, C.-T. et al. | 2006
- 1347
-
Assessment of capture cross sections and effective density of electron traps generated in silicon dioxidesMo Huai Chang, / Zhang, J.F. / Zhang, W.D. et al. | 2006
- 1347
-
Reliability - Assessment of Capture Cross Sections and Effective Density of Electron Traps Generated in Silicon DioxidesChang, M.H. et al. | 2006
- 1355
-
Three-dimensional modeling and simulation of p-n junction spherical silicon solar cellsGharghi, M. / Hua Bai, / Stevens, G. / Sivoththaman, S. et al. | 2006
- 1355
-
Silicon Devices - Three-Dimensional Modeling and Simulation of p-n Junction Spherical Silicon Solar CellsGharghi, M. et al. | 2006
- 1364
-
Silicon Devices - Accumulation Gate Capacitance of MOS Devices With Ultrathin High-k Gate Dielectrics: Modeling and CharacterizationIslam, A.E. et al. | 2006
- 1364
-
Accumulation gate capacitance of MOS devices with ultrathin high-/spl kappa/ gate dielectrics: modeling and characterizationIslam, A.E. / Haque, A. et al. | 2006
- 1364
-
Accumulation gate capacitance of MOS devices with ultrathin high- kappa gate dielectrics: modeling and characterizationIslam, A.E. / Haque, A. et al. | 2006
- 1373
-
Gate capacitances behavior of nanometer FD SOI CMOS devices with HfO/sub 2/ high-k gate dielectric considering vertical and fringing displacement effects using 2-D SimulationYu-Sheng Lin, / Chia-Hong Lin, / Kuo, J.B. / Ke-Wei Su, et al. | 2006
- 1373
-
Silicon Devices - Gate Capacitances Behavior of Nanometer FD SOI CMOS Devices With HfO2 High-k Gate Dielectric Considering Vertical and Fringing Displacement Effects Using 2-D SimulationLin, Y.-S. et al. | 2006
- 1379
-
A new analytical model for the thermal resistance of deep-trench bipolar transistorsVanhoucke, T. / Hurkx, G.A.M. et al. | 2006
- 1379
-
Silicon Devices - A New Analytical Model for the Thermal Resistance of Deep-Trench Bipolar TransistorsVanhoucke, T. et al. | 2006
- 1389
-
Analytical I-V relationship incorporating field-dependent mobility for a symmetrical DG MOSFET with an undoped bodyMan Wong, / Xuejie Shi, et al. | 2006
- 1389
-
Silicon Devices - Analytical I-V Relationship Incorporating Field-Dependent Mobility for a Symmetrical DG MOSFET With an Undoped BodyWong, M. et al. | 2006
- 1398
-
Ni fully GermanoSilicide for gate electrode application in pMOSFETs with HfSiON gate dielectricsHong Yu Yu, / Singanamalla, R. / Simoen, E. / Xiaoping Shi, / Lauwers, A. / Kittl, J.A. / Van Elshocht, S. / Kristin De Meyer, / Absil, P. / Jurczak, M. et al. | 2006
- 1398
-
Silicon Devices - Ni Fully GermanoSilicide for Gate Electrode Application in pMOSFETs With HfSiON Gate DielectricsYu, H.Y. et al. | 2006
- 1405
-
Silicon Devices - Local Clustering 3-D Stacked CMOS Technology for Interconnect Loading ReductionLin, X. et al. | 2006
- 1405
-
Local clustering 3-D stacked CMOS technology for interconnect loading reductionXinnan Lin, / Shengdong Zhang, / Xusheng Wu, / Chan, M. et al. | 2006
- 1411
-
Analytical model of drain current of Si/SiGe heterostructure p-channel MOSFETs for circuit simulationBindu, B. / DasGupta, N. / DasGupta, A. et al. | 2006
- 1411
-
Silicon Devices - Analytical Model of Drain Current of Si-SiGe Heterostructure p-Channel MOSFETs for Circuit SimulationBindu, B. et al. | 2006
- 1420
-
Novel dual-metal gate technology using Mo-MoSi/sub x/ combinationTzung-Lin Li, / Wu-Lin Ho, / Hung-Bin Chen, / Wang, H.C.-H. / Chun-Yen Chang, / Chenming Hu, et al. | 2006
- 1420
-
Silicon Devices - Novel Dual-Metal Gate Technology Using Mo-MoSix CombinationLi, T.-L. et al. | 2006
- 1427
-
Silicon Devices - Supply and Threshold-Voltage Trends for Scaled Logic and SRAM MOSFETsMorifuji, E. et al. | 2006
- 1427
-
Supply and threshold-Voltage trends for scaled logic and SRAM MOSFETsMorifuji, E. / Yoshida, T. / Kanda, M. / Matsuda, S. / Yamada, S. / Matsuoka, F. et al. | 2006
- 1433
-
Stability of self-consistent Monte Carlo Simulations: effects of the grid size and of the coupling schemePalestri, P. / Barin, N. / Esseni, D. / Fiegna, C. et al. | 2006
- 1433
-
Silicon Devices - Stability of Self-Consistent Monte Carlo Simulations: Effects of the Grid Size and of the Coupling SchemePalestri, P. et al. | 2006
- 1443
-
Revised stability analysis of the nonlinear Poisson scheme in self-consistent Monte Carlo device simulationsPalestri, P. / Barin, N. / Esseni, D. / Fiegna, C. et al. | 2006
- 1443
-
Silicon Devices - Revised Stability Analysis of the Nonlinear Poisson Scheme in Self-Consistent Monte Carlo Device SimulationsPalestri, P. et al. | 2006
- 1452
-
Solid-State Device Phenomena - RF Power Characteristics of SiGe HBTs at Cryogenic TemperaturesHsieh, M.-W. et al. | 2006
- 1452
-
RF power characteristics of SiGe HBTs at cryogenic temperaturesMeng-Wei Hsieh, / Yue-Ming Hsin, / Kung-Hao Liang, / Yi-Jen Chan, / Denny Tang, et al. | 2006
- 1459
-
Solid-State Device Phenomena - Impact of Interfacial Layer on Low-Frequency Noise of HfSiON Dielectric MOSFETsMin, B. et al. | 2006
- 1459
-
Impact of interfacial layer on low-frequency noise of HfSiON dielectric MOSFETsBigang Min, / Devireddy, S.P. / Celik-Butler, Z. / Shanware, A. / Colombo, L. / Green, K. / Chambers, J.J. / Visokay, M.R. / Rotondaro, A.L.P. et al. | 2006
- 1467
-
One-third-of-pitch reduction technique for the analysis of ternary azimuthally periodic helical slow-wave structuresAloisio, M. / Sorbello, G. et al. | 2006
- 1467
-
Vacuum Electron Devices - One-Third-of-Pitch Reduction Technique for the Analysis of Ternary Azimuthally Periodic Helical Slow-Wave StructuresAloisio, M. et al. | 2006
- 1474
-
Enhancement-mode AlGaN/GaN HEMTs on silicon substrateShuo Jia, / Yong Cai, / Deliang Wang, / Baoshun Zhang, / Lau, K.M. / Chen, K.J. et al. | 2006
- 1474
-
BRIEFS - Enhancement-Mode AlGaN-GaN HEMTs on Silicon SubstrateJia, S. et al. | 2006
- 1477
-
BRIEFS - Field-Plated 0.25-mm Gate-Length AlGaN-GaN HEMTs With Varying Field-Plate LengthKumar, V. et al. | 2006
- 1477
-
Field-plated 0.25-/spl mu/m gate-length AlGaN/GaN HEMTs with varying field-plate lengthKumar, V. / Guang Chen, / Shiping Guo, / Adesida, I. et al. | 2006
- 1480
-
BRIEFS - A Novel Voltage-Mode CMOS Quaternary Logic DesignSilva, R.C.G.da et al. | 2006
- 1480
-
A novel Voltage-mode CMOS quaternary logic designda Silva, R.C.G. / Boudinov, H. / Carro, L. et al. | 2006
- 1483
-
BRIEFS - Indium-Tin-Oxide-Free Organic Light-Emitting DeviceKe, L. et al. | 2006
- 1483
-
Indium-tin-oxide-free organic light-emitting deviceLin Ke, / Peng Chen, / Kumar, R.S. / Burden, A.P. / Soo-Jin Chua, et al. | 2006
- 1487
-
Transient substrate currents in junction-isolated lateral IGBTHardikar, S. / Green, D.W. / Narayanan, E.M.S. et al. | 2006
- 1487
-
BRIEFS - Transient Substrate Currents in Junction-Isolated Lateral IGBTHardikar, S. et al. | 2006
- 1490
-
BRIEFS - Analysis of Dielectric Rods With Arbitrary Shape for Low-Dispersion Slow-Wave Structures in Helix TWTsPaoloni, C. et al. | 2006
- 1490
-
Analysis of dielectric rods with arbitrary shape for low-dispersion slow-wave structures in helix TWTsPaoloni, C. et al. | 2006
- 1494
-
ANNOUNCEMENTS - Call for Papers -- Special Issue of the IEEE TRANSACTIONS ON ELECTRON DEVICES on Spintronics| 2006
- 1494
-
Special issue on spintronics| 2006
- 1496
-
ANNOUNCEMENTS - Call for Papers -- Special Issue of the IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY on Automotive Electronic Device Reliability| 2006
- 1496
-
Special issue on automotive electronic device reliability| 2006
- 1497
-
Special issue on simulation and modeling of nanoelectronics devices| 2006
- 1497
-
ANNOUNCEMENTS - Call for Papers -- Special Issue of the IEEE TRANSACTIONS ON ELECTRON DEVICES on Simulation and Modeling of Nanoelectronics Devices| 2006
- 1499
-
ANNOUNCEMENTS - Call for Nominations -- 2006 J. J. Ebers Award| 2006
- 1499
-
2006 EDS J. J. Ebers Award| 2006
- 1500
-
ANNOUNCEMENTS - Call for Papers -- 2007 IEEE International Conference on Microelectronic Test Structures| 2006
- 1500
-
20th IEEE International Conference on Microelectronic Test Structures| 2006
- c1
-
Table of contents| 2006
- c2
-
IEEE Transactions on Electron Devices publication information| 2006
- c3
-
IEEE Transactions on Electron Devices information for authors| 2006