Raman characterization of the In0.14Ga0.86As0.13Sb0.87 highly doped with Te grown on GaSb by liquid phase epitaxy (Französisch)
- Neue Suche nach: Diaz-Reyes, J.
- Neue Suche nach: Diaz-Reyes, J.
- Neue Suche nach: Lopez-Cruz, E.
- Neue Suche nach: Mendoza-Álvarez, J.
- Neue Suche nach: Jiménez-Sandoval, S.
In:
Journal de physique / 4
;
132
; 211-214
;
2006
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ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:Raman characterization of the In0.14Ga0.86As0.13Sb0.87 highly doped with Te grown on GaSb by liquid phase epitaxy
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Beteiligte:
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Erschienen in:Journal de physique / 4 ; 132 ; 211-214
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Verlag:
- Neue Suche nach: EDP Sciences
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Erscheinungsort:Les Ulis
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Erscheinungsdatum:2006
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ISSN:
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ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Französisch
- Neue Suche nach: 31.00 / 33.00
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 250/3400
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Schlagwörter:
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Klassifikation:
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Datenquelle:
Inhaltsverzeichnis – Band 132
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Two dimensional Sr silicate grown on Si(001) studied using X-ray Photoelectron SpectroscopyEl Kazzi, M. / Delhaye, G. / Gaillard, S. / Bergignat, E. / Hollinger, G. et al. | 2006
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Characterisation of metal-organic semiconductor interfaces: In and Sn on CuPcAristov, V. Yu. / Molodtsova, O. V. / Zhilin, V. M. / Vyalikh, D. V. / Knupfer, M. et al. | 2006
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- 127
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Thermal diffusion of indium in perylenetetracarboxylic dianhydrideHudej, R. / Bratina, G. et al. | 2006
- 133
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Nucleation of SiC nanocrystals at the Si/SiO2 interface: Effect of the interface propertiesPongrácz, A. / Battistig, G. / Tóth, A. L. / Makkai, Zs. / Dücső, Cs. / Josepovits, K. V. / Bársony, I. et al. | 2006
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Characteristics of metal-silicon carbide tunnel contactAroutiounian, V. M. / Buniatyan, V. V. / Soukiassian, P. G. / Buniatyan, Vaz. V. et al. | 2006
- 141
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Formation of nanoclusters containing In and Sb atomsSaito, M. / Sasaki, H. / Sasaki, T. / Mori, M. / Tambo, T. / Tatsuyama, C. et al. | 2006
- 147
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Surface reactivity of InSb studied by cyclic voltammetry coupled to XPSKünstler-Hourriez, B. / Erné, B. / Lefévre, F. / Lorans, D. / Canava, B. / Herlem, M. / Etcheberry, A. et al. | 2006
- 153
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Magnetic and structural properties of Mn/InSb(001)Zerrouki, M. / De Padova, P. / Quaresima, C. / Perfetti, P. / Richter, M. C. / Heckmann, O. / Hricovini, K. et al. | 2006
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- 171
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IV characteristics in structures prepared by tip induced oxidationCambel, V. / Šoltýs, J. / Martaus, J. / Moško, M. et al. | 2006
- 177
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Observation of growth during the MOVPE of III-nitridesHardtdegen, H. / Kaluza, N. / Steins, R. / Cho, Y. S. / Schmidt, R. / Sofer, Z. / Zettler, J.-T. et al. | 2006
- 185
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Photocatalysis over titania on iron oxideKwi Cheol Kim / Chong Soo Han et al. | 2006
- 189
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Structural investigation of organosilane self-assembled monolayers by atomic scale simulationYamamoto, H. / Watanabe, T. / Nishiyama, K. / Tatsumura, K. / Ohdomari, I. et al. | 2006
- 195
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Alkylation of Silicon(111) surfacesRivillon, S. / Chabal, Y. J. et al. | 2006
- 199
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Metal induced gap states at tetratetracontane/Cu interfaceKiguchi, M. / Yoshikawa, G. / Saiki, K. / Arita, R. / Aoki, H. et al. | 2006
- 205
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Thermodynamic study of interface between InGaP/GaAs and GaAs/InGaP heterosystemsPelosi, C. / Bosi, M. / Attolini, G. / Prutskij, T. et al. | 2006
- 211
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Raman characterization of the In0.14Ga0.86As0.13Sb0.87 highly doped with Te grown on GaSb by liquid phase epitaxy*Díaz-Reyes, J. / López-Cruz, E. / Mendoza-Álvarez, J. G. / Jiménez-Sandoval, S. et al. | 2006
- 215
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Pulsed electron beam annealing: A tool for post-implantation damage control in SiCBrink, D. J. / Kunert, H. W. / Malherbe, J. B. / Camassel, J. et al. | 2006
- 221
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Formation of planar defects during the initial growth of M-plane GaN on LiAlO2(100)Trampert, A. / Liu, T. Y. / Brandt, O. / Ploog, K. H. et al. | 2006
- 225
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Interface formation and structural properties of iron films on Al0.48 In0.52As(001)Schieffer, P. / Tournerie, N. / Lépine, B. / Lallaizon, C. / Guivarc'h, A. / Jézéquel, G. et al. | 2006
- 231
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Structural and magnetic properties of Ge1-xMnx-Ge(001) 2 × 1 diluted magnetic semiconductorsDe Padova, P. et al. | 2006
- 231
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Structural and magnetic properties of Ge$_{1-{\rm x}}$Mnx/Ge(001) 2 $\times$ 1 diluted magnetic semiconductorsDe Padova, P. / Quaresima, C. / Perfetti, P. / Zema, N. / Grazioli, C. / Veronese, M. / Olivieri, B. / Richter, M. C. / Heckmann, O. / D'Orazio, F. et al. | 2006
- 237
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Nano-domains segmentation on AFM imagesLuciani, X. / Patrone, L. / Courmontagne, P. et al. | 2006
- 243
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He scattering study of Au(111) nanostructured by ion sputteringCavanna, D. / Bracco, G. et al. | 2006
- 249
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Precisely controlled anodic etching for processing of GaAs-based quantum nanostructures and devicesShiozaki, N. / Sato, T. / Akazawa, M. / Hasegawa, H. et al. | 2006
- 255
-
AES measurements of Sb mass transport in amorphous Si thin filmsNyéki, J. / Girardeaux, C. / Rolland, A. / Bernardini, J. et al. | 2006
- 259
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Effects of interface roughness on the local valence electronic structure at the SiO2/Si interface: Soft X-ray absorption and emission studyYamashita, Y. / Yamamoto, S. / Mukai, K. / Yoshinobu, J. / Harada, Y. / Tokushima, T. / Takata, Y. / Shin, S. et al. | 2006
- 263
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Wet chemical nitridation of GaAs(001) surfaceBerkovits, V. L. / Karpenko, A. N. / Masson, L. / Ulin, V. P. et al. | 2006
- 269
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Growth of aluminum oxide thin films on Cobalt: An AES and AFM studyOughaddou, H. / Vizzini, S. / Aufray, B. / Ealet, B. / Bibérian, J. P. / Ravel, L. / Gay, J.-M. / d'Avitaya, F. A. et al. | 2006
- 273
-
Thermal stability of Gd2O3/Si(100) interfacial transition layerNohira, H. / Yoshida, T. / Okamoto, H. / Shinagawa, S. / Sakai, W. / Nakajima, K. / Suzuki, M. / Kimura, K. / Ng Jin Aun / Kobayashi, Y. et al. | 2006
- 279
-
Preparation and characterization of HfO2 thin films by photo-assisted MOCVDKanashima, T. / Tada, T. / Okuyama, M. et al. | 2006
- 285
-
Formation of epitaxial strontium oxide and silicate on silicon (001)Delhaye, G. / El Kazzi, M. / Gaillard, S. / Gendry, M. / Hollinger, G. et al. | 2006
- 291
-
Physical property analysis of C-doped GaAs as function of the carrier concentration grown by MOCVD using elemental arsenic as precursorDíaz-Reyes, J. / Avendaño, M. A. / Galván-Arellano, M. / Peña-Sierra, R. et al. | 2006
- 295
-
Polarized photoluminescence of the of GaInP2 layers grown on GaAs and Ge substrates by MOVPE techniquePrutskij, T. / Pelosi, C. / Brito-Orta, R. et al. | 2006
- 301
-
Growth of long range ordered pentacene/benzenethiol/Cu(100) heterostructureKanjilal, A. / Bussolotti, F. / Crispoldi, F. / Beccari, M. / Di Castro, V. / Grazia Betti, M. / Mariani, C. et al. | 2006
- 307
-
Vibration modes and interface abruptness of CdSe quantum dots, embedded either in BeTe or ZnSeGeurts, J. / Bass, U. / Mahapatra, S. / Brunner, K. / Muck, T. / Wagner, V. et al. | 2006
- 311
-
Ordered silicon structures on silver (100) at 230°CLeandri, C. / Aufray, B. / Le Lay, G. / Girardeaux, C. / Ottaviani, C. / Cricenti, A. et al. | 2006
- 315
-
The properties of GaInP/GaAs heterostructures as a function of growth temperaturePelosi, C. / Attolini, G. / Bosi, M. / Martín, E. / Martinez, O. / Sanz, L. F. / Jiménez, J. / Prutskij, T. et al. | 2006
- 321
-
Effect of ageing on the statical and time-resolved photoluminescence spectra of porous siliconHuy, Bui / Van Hoi, Pham / Phi Hoa Binh / Tran Thi Kim Chi / Le Quang Huy / Nguyen Quang Liem et al. | 2006
- 325
-
Reflectance calculation of a diamond-like carbon/porous Si thin films in silicon-based photovoltaic cellsMartirosyan, Kh. S. / Aroutiounian, V. M. / Soukiassian, P. et al. | 2006
- 329
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Raman active modes of one–, two–, and three–phonon processes in the most important compounds and semiconductors with the rhombic, tetragonal, regular, trigonal, and hexagonal structuresKunert, H. W. / Barnas, J. / Brink, D. J. / Malherbe, J. et al. | 2006
- 337
-
Density of occupied and unoccupied states monitored during metal deposition onto phthalocyanine layersGorgoi, M. / Zahn, D. R.T. et al. | 2006
- 341
-
Efficiency improvement of white organic light emitting diodes with a mixed electron transporting layerUeng, Uerng-Yih / Tseng, Ching-Huei / Yokoyama, Meiso et al. | 2006
- 345
-
Using [Naphthyl-substituted benzidine derivative] (NPB): Tris-(8-hydroxyquinoline)-aluminum(III) (Alq3) mixed Layer to improve the efficiency of organic light emitting diodesTseng, Ching-Huei / Ueng, Uerng-Yih / Yokoyama, Meiso et al. | 2006
- 351
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The exciplex emission of organic light emitting diodes with 5, 6, 11, 12-tetraphenylnaphthacene (Rubrene)-doped hole transport layerTseng, Ching-Huei / Ueng, Uerng-Yih / Yokoyama, Meiso et al. | 2006
- 355
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Microwave characteristics of hetero-junction impatt diodes based on SiCBuniatyan, V. V. / Aroutiounian, V. M. / Soukiassian, P. G. / Zekentes, K. / Buniatyan, Vaz. V. et al. | 2006
- 359
-
Bilayer electrode composition of TiO2 film for dye-sensitized solar cellMurayama, M. / Yamazaki, E. / Hashimoto, N. / Mori, T. et al. | 2006
- 365
-
Influence of crystal quality on electron mobility in AlGaN/GaN HEMTs grown on Si(111), SiC and GaN templatesCordier, Y. / Lorenzini, P. / Hugues, M. / Semond, F. / Natali, F. / Bougrioua, Z. / Massies, J. / Frayssinet, E. / Beaumont, B. / Gibart, P. et al. | 2006
- 369
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Index| 2006
- III
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PrefaceGirardeaux, C. / Aufray, B. / Bernardini, J. / Dallaporta, H. / Le Lay, G. / Soukiassian, P. et al. | 2006
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ICFSI-10 - 10th International Conference on the Information of Semiconductor Interfaces| 2006