Process-Device Integration - Temperature and Substrate Effects in Monolithic RF Inductors on Silicon With 6-mm-Thick Top Metal for RFIC Applications (Unbekannt)
- Neue Suche nach: Chiu, H.-W.
- Neue Suche nach: Chiu, H.-W.
- Neue Suche nach: Lin, Y.-S.
- Neue Suche nach: Liu, K.
- Neue Suche nach: Lu, S.-S.
In:
IEEE transactions on semiconductor manufacturing
;
19
, 3
; 316-330
;
2006
-
ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Process-Device Integration - Temperature and Substrate Effects in Monolithic RF Inductors on Silicon With 6-mm-Thick Top Metal for RFIC Applications
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Beteiligte:
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Erschienen in:IEEE transactions on semiconductor manufacturing ; 19, 3 ; 316-330
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsort:New York, NY
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Erscheinungsdatum:2006
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ISSN:
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ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Unbekannt
- Neue Suche nach: 770/5670
- Neue Suche nach: 53.56 / 53.56
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Datenquelle:
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