Drastic Reduction of Gate Leakage in InAlAs-InGaAs HEMT's Using a Pseudomorphic InAlAs Hole Barrier Layer (Englisch)
- Neue Suche nach: Heedt, C.
- Neue Suche nach: Heedt, C.
- Neue Suche nach: Buchali, F.
- Neue Suche nach: Prost, W.
- Neue Suche nach: Brockerhoff, W.
- Neue Suche nach: Fritzsche, D.
- Neue Suche nach: Nickel, H.
- Neue Suche nach: Lösch, R.
- Neue Suche nach: Schlapp, W.
- Neue Suche nach: Tegude, F.-J.
In:
IEEE transactions on electron devices
;
41
, 10
; 1685-1690
;
1994
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Drastic Reduction of Gate Leakage in InAlAs-InGaAs HEMT's Using a Pseudomorphic InAlAs Hole Barrier Layer
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Beteiligte:Heedt, C. ( Autor:in ) / Buchali, F. / Prost, W. / Brockerhoff, W. / Fritzsche, D. / Nickel, H. / Lösch, R. / Schlapp, W. / Tegude, F.-J.
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Erschienen in:IEEE transactions on electron devices ; 41, 10 ; 1685-1690
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsort:New York, NY
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Erscheinungsdatum:1994
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ISSN:
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ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 53.50 / 53.00 / 52.50 / 54.20
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 770/5670
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Datenquelle:
Inhaltsverzeichnis – Band 41, Ausgabe 10
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