Effects and Prevention of Source-Drain Ion Implantation into the Polysilicon in a BiCMOS Technology (Englisch)
- Neue Suche nach: Hook, T.B.
- Neue Suche nach: Hook, T.B.
- Neue Suche nach: Piccirillo, J.
- Neue Suche nach: Willets, C.
In:
IEEE electron device letters
;
16
, 3
; 571-572
;
1995
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:Effects and Prevention of Source-Drain Ion Implantation into the Polysilicon in a BiCMOS Technology
-
Beteiligte:
-
Erschienen in:IEEE electron device letters ; 16, 3 ; 571-572
-
Verlag:
- Neue Suche nach: IEEE
-
Erscheinungsort:New York, NY
-
Erscheinungsdatum:1995
-
ISSN:
-
ZDBID:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Print
-
Sprache:Englisch
- Neue Suche nach: 770/5670
- Neue Suche nach: 53.51
- Weitere Informationen zu Basisklassifikation
-
Schlagwörter:
-
Klassifikation:
-
Datenquelle:
Inhaltsverzeichnis – Band 16, Ausgabe 3
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 373
-
ForewordIwai, H. et al. | 1995
- 377
-
Silicon Bipolar Device Structures for Digital Applications: Technology Trends and Future Directions (Invited Paper)Warnock, J.D. et al. | 1995
- 390
-
Recent Progress in Bipolar Transistor Technology (Invited Paper)Nakamura, T. et al. | 1995
- 399
-
Sub-20 ps High-Speed ECL Bipolar Transistor with Low Parasitic ArchitectureIinuma, T. et al. | 1995
- 406
-
Very-High-Speed Silicon Bipolar Transistors with In-Situ Doped Polysilicon Emitter and Rapid Vapor-Phase Doping BaseUchino, T. et al. | 1995
- 413
-
Self-Aligned Complementary Bipolar Technology for Low-Power Dissipation and Ultra-High-Speed LSI'sOnai, T. et al. | 1995
- 419
-
Hetero-Emitter-Like Characteristics of Phosphorus Doped Polysilicon Emitter Transistors-Part I: Band Structure in the Polysilicon Emitter Obtained from Electrical MeasurementsKondo, M. et al. | 1995
- 427
-
Hetero-Emitter-Like Characteristics of Phosphorus Doped Polysilicon Emitter Transistors-Part II: Band Deformation Due to Residual Stress in the Polysilicon EmitterKondo, M. et al. | 1995
- 436
-
Physically Based Comparison of Hot-Carrier-Induced and Ionizing-Radiation-Induced Degradation in BJT'sKosier, S.L. et al. | 1995
- 445
-
Switching Dynamics of IGBT's in Soft-Switching ConvertersWidjaja, I. et al. | 1995
- 455
-
Si-SiGe Epitaxial-Base Transistors- Part I: Materials, Physics, and Circuits (Invited Paper)Harame, D.L. et al. | 1995
- 469
-
Si-SiGe Epitaxial-Base Transistors-Part lI: Process Integration and Analog Applications (Invited Paper)Harame, D.L. et al. | 1995
- 483
-
Sub-20 ps ECL Circuits with High-Performance Super Self-Aligned Selectively Grown SiGe Base (SSSB) Bipolar TransistorsSato, F. et al. | 1995
- 489
-
Scaling Constraints Imposed by Self-Heating in Submicron SOI MOSFET'sDallmann, D.A. et al. | 1995
- 497
-
High Speed Submicron BiCMOS MemoryTakada, M. et al. | 1995
- 506
-
TFSOI Complementary BiCMOS Technology for Low Power ApplicationsHuang, W.-L.M. et al. | 1995
- 513
-
A High Performance Super Self-Aligned 3 V-5 V BiCMOS Technology with Extremely Low Parasitics for Low-Power Mixed-Signal ApplicationsSung, J.M. et al. | 1995
- 523
-
Two-Dimensional Modeling of the Enhanced Diffusion in Thin Base n-p-n Bipolar Transistors after Lateral Ion ImplantationsDenorme, S. et al. | 1995
- 528
-
A Systematic Layout-Based Method for the Modeling of High-Power HBT's Using the Scaling ApproachHajji, R. et al. | 1995
- 534
-
An Analysis of Small-Signal and Large-Signal Base Resistances for Submicrometer BJT'sFuse, T. et al. | 1995
- 540
-
An Accurate Intrinsic Capacitance Modeling for Deep Submicrometer MOSFET'sCho, D.-H. et al. | 1995
- 549
-
An Analytical Transient Model for a 1.5 V BiCMOS Dynamic Logic Circuit for Low-Voltage Deep Submicrometer BiCMOS VLSIChiang, C.S. et al. | 1995
- 555
-
Effect of Bipolar Turn-On on the Static Current-Voltage Characteristics of Scaled Vertical Power DMOSFET'sFischer, K.J. et al. | 1995
- 564
-
A Versatile Half-Micron Complementary BiCMOS Technology for Microprocessor-Based Smart Power ApplicationsTsui, P.G.Y. et al. | 1995
- 571
-
Effects and Prevention of Source-Drain Ion Implantation into the Polysilicon in a BiCMOS TechnologyHook, T.B. et al. | 1995
- 573
-
Improved Circuit Technique to Reduce hfe Degradation in Bipolar Output DriversKizilyalli, I.C. et al. | 1995