Synchrotron radiation excited growth of ZnTe using metalorganic sources (Englisch)
- Neue Suche nach: Ogata, T.
- Neue Suche nach: Ogata, T.
- Neue Suche nach: Gheyas, S.I.
- Neue Suche nach: Ikejiri, M.
- Neue Suche nach: Ogawa, H.
- Neue Suche nach: Nishio, M.
In:
Journal of crystal growth
;
146
, 1-4
; 587-591
;
1995
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:Synchrotron radiation excited growth of ZnTe using metalorganic sources
-
Beteiligte:
-
Erschienen in:Journal of crystal growth ; 146, 1-4 ; 587-591
-
Verlag:
- Neue Suche nach: Elsevier
-
Erscheinungsort:Amsterdam [u.a.]
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Erscheinungsdatum:1995
-
ISSN:
-
ZDBID:
-
Medientyp:Aufsatz (Zeitschrift)
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Format:Print
-
Sprache:Englisch
- Neue Suche nach: 38.31 / 33.61 / 35.90
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 535/3475
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Schlagwörter:
-
Klassifikation:
-
Datenquelle:
Inhaltsverzeichnis – Band 146, Ausgabe 1-4
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Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
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Mechanism of vapour growth and defect formation in large mercuric iodide crystalsPiechotka, M. et al. | 1995
- 9
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a-Mercuric iodide crystal growth by physical vapour transportCadoret, R. et al. | 1995
- 15
-
Bulk and surface stoichiometry of vapor grown mercuric iodide crystalsSchieber, M. et al. | 1995
- 23
-
Optical methods for measuring iodine vapor during mercuric iodide crystal growth by physical vapor transportNason, D. et al. | 1995
- 29
-
Crystal growth and characterisation of urea by physical vapour transport in semi-open cellsZha, M. et al. | 1995
- 37
-
First results on silicon carbide vapour phase epitaxy growth in a new type of vertical low pressure chemical vapour deposition reactorRupp, R. et al. | 1995
- 42
-
Mass flux of ZnSe by physical vapor transportSha, Y.-G. et al. | 1995
- 49
-
Gas effect on transport rates of ZnSe in closed ampoulesMuranoi, T. et al. | 1995
- 53
-
Zinc selenide single crystal growth by chemical transport reactionsBöttcher, K. et al. | 1995
- 59
-
Stoichiometry of CdS crystals and their optical and lasing propertiesKazlauskas, A. et al. | 1995
- 65
-
Bulk vapour growth of CdTeGrasza, K. et al. | 1995
- 69
-
Effect of temperature field on growth stabilityGrasza, K. et al. | 1995
- 75
-
The optimal temperature profile in crystal growth from the vapourGrasza, K. et al. | 1995
- 80
-
Doping of wide gap II-VI compoundsFaschinger, W. et al. | 1995
- 87
-
Doping of GaSb single crystals with various elementsSestáková, V. et al. | 1995
- 92
-
Closed tube vapour growth of CdTe:V and CdTe:Ti and its characterizationSchwarz, R. et al. | 1995
- 98
-
Investigation of CdTe:Cl grown from the vapour phase under microgravity conditions with time dependent charge measurements and photoinduced current transient spectroscopyEiche, C. et al. | 1995
- 104
-
Characterization of vapor phase growth using X-ray techniquesKisker, D.W. et al. | 1995
- 112
-
A study of structural defects in vapour grown a-HgI2 single crystals by g-ray diffractionRossberg, A. et al. | 1995
- 119
-
In-situ observation of chemical vapour deposition growth of epitaxial SiGe thin films by reflection supported pyrometric interferometryRitter, G. et al. | 1995
- 125
-
Characterization of cadmium telluride crystals grown by different techniques from the vapour phaseLaasch, M. et al. | 1995
- 130
-
Stress birefringence and microinclusions in sublimation-grown hulk CdTeKloess, G. et al. | 1995
- 136
-
Measurement of etch pit densities in diffused samples of CdTeAhmed, M.U. et al. | 1995
- 142
-
Studies of the compensation mechanism in CdTe grown from the vapour phaseFiederle, M. et al. | 1995
- 148
-
Atomic level interface structure of InP-InPAs-InP measured by X-ray crystal truncation rod scatteringTabuchi, M. et al. | 1995
- 153
-
Quantum transport effects in a two-dimensional electron gas as a tool for the investigation of heterointerfacesKreshchuk, A.M. et al. | 1995
- 159
-
Characterization of high-quality molecular beam epitaxial grown InxAlzGal1 - x - zAs-InyAlu Ga1 - u - yAs-InP heterostructuresHillmer, H. et al. | 1995
- 164
-
Fluctuations and instabilities of steps in the growth and sublimation of crystalsUwaha, M. et al. | 1995
- 171
-
Theoretical study of macrostep stability under temperature gradientDanilewsky, A.N. et al. | 1995
- 177
-
Theoretical studies of step edge supersaturation and its As-Ga flux dependence in molecular beam epitaxy of GaAs on vicinal surfacesMiwa, K. et al. | 1995
- 183
-
Multiatomic step formation mechanism of metalorganic vapor phase epitaxial grown GaAs vicinal surfaces and its application to quantum well wiresFukui, T. et al. | 1995
- 188
-
Effects of adsorbates on step coverage in TiN chemical vapor depositionOhshita, Y. et al. | 1995
- 193
-
Three-dimensional towards two-dimensional coherent epitaxy initiated by surfactantsKern, R. et al. | 1995
- 198
-
Growth mechanism of a Ag crystal particle containing a twin plane grown on a Mo(110) surfaceGotoh, Y. et al. | 1995
- 202
-
A multigrid solver for fluid flow and mass transfer coupled with grey-body surface radiation for the numerical simulation of chemical vapor deposition processesDurst, F. et al. | 1995
- 209
-
Development of advanced mathematical models for numerical calculations of radiative heat transfer in metalorganic chemical vapour deposition reactorsKadinski, L. et al. | 1995
- 214
-
On the sublimation growth of SiC bulk crystals: Development of a numerical process modelHofmann, D. et al. | 1995
- 220
-
Three-dimensional model calculations of epitaxial growth by Monte Carlo simulationTagwerker, M. et al. | 1995
- 227
-
Growth of C60 crystals from the vapor phaseSchönherr, E. et al. | 1995
- 233
-
Studies of the growth mechanism of polycrystalline CuInSe2 thin films prepared by a sequential processZweigart, S. et al. | 1995
- 239
-
In situ gravimetric monitoring of arsenic desorption in GaAs atomic layer epitaxyKoukitu, A. et al. | 1995
- 246
-
Vapour phase epitaxial grown GaAs films with a very low deep level concentrationChaldyshev, V.V. et al. | 1995
- 251
-
Growth of CuInTe2 polycrystalline thin filmsNadeneau, V. et al. | 1995
- 256
-
Characterization of (111) cadmium telluride electrodeposited on cadmium sulphideKampmann, A. et al. | 1995
- 262
-
Influence of growth rates on properties of InN thin filmsSato, Y. et al. | 1995
- 266
-
Surface topography of epitaxial Au(111) films deposited on MoS2Nagashima, S. et al. | 1995
- 271
-
Growth mechanism and electronic properties of doped pyrite (FeS2) crystalsTomm, Y. et al. | 1995
- 277
-
Liquid phase electroepitaxy of III-V semiconductorsGolubev, L.V. et al. | 1995
- 283
-
Liquid phase electroepitaxial growth of thick and compositionally uniform AlGaAs layers on GaAs substratesZytkiewicz, Z.R. et al. | 1995
- 287
-
Preparation of periodic structures by meander type liquid phase epitaxyNohavica, D. et al. | 1995
- 293
-
Silicon layers on polycrystalline silicon substrates -- influence of growth parameters during liquid phase epitaxySteiner, B. et al. | 1995
- 299
-
Etchback-regrowth process for AlGaAs-GaAs solar cell structuresBaldus, A. et al. | 1995
- 305
-
Investigation of GaAs growth from Bi-based melts for solar cellsBaldus, A. et al. | 1995
- 310
-
Liquid phase epitaxial growth of elastically strained InGaAsP layers for spin-polarized electron sourcesBolkhovityanov, Yu B. et al. | 1995
- 314
-
Epitaxial lateral overgrowth of InP by liquid phase epitaxyNaritsuka, S. et al. | 1995
- 319
-
Liquid phase epitaxy and photoluminescence characterization of p-type GaSb layers grown from Bi based meltsGladkov, P. et al. | 1995
- 326
-
Elementary growth process of molecular beam epitaxyNishinaga, T. et al. | 1995
- 334
-
Elementary processes in molecular beam epitaxy studied by in-situ scanning electron microscopyInoue, N. et al. | 1995
- 340
-
Auger investigation of group III nitride films grown by molecular beam epitaxyNovikov, S.V. et al. | 1995
- 344
-
Time-resolved reflection high energy electron diffraction study of dynamical surface processes during molecular beam epitaxy of GaAs and AlAsKarpov, S.Yu et al. | 1995
- 349
-
Time-resolved reflection high energy electron diffraction analysis for atomic layer depositions of GaSb by molecular beam epitaxyYano, M. et al. | 1995
- 354
-
In-situ observation of GaAs selective epitaxy on GaAs (111)B substratesAllegretti, F. et al. | 1995
- 359
-
A study on in-situ maskless selective epitaxy of GaAs by a low-energy Ga focused ion beam with an As4 molecular beamSaitoh, I. et al. | 1995
- 363
-
Island formation of InAs grown on GaAsNabetani, Y. et al. | 1995
- 368
-
Defect control during growth of highly mismatched (100) InAs-GaAs-heterostructuresTrampert, A. et al. | 1995
- 374
-
Inter-surface diffusion of In on (111)A-(001) InAs nonplanar substrates in molecular beam epitaxyShen, X.Q. et al. | 1995
- 379
-
Interface structures in GaAs-Al(Ga)As quantum wells controlled by metalorganic vapor phase epitaxy and molecular beam epitaxyInoue, N. et al. | 1995
- 384
-
Molecular beam epitaxial growth of AlGaAs p-n junctions on GaAs(111)A substrates using only silicon dopantFujita, K. et al. | 1995
- 389
-
High-quality Si-doped GaAs-In0.1Al0.9As alternating l-4 layers grown on a slightly misorientated GaAs(111)A substrate by molecular beam epitaxyNitatori, K. et al. | 1995
- 394
-
In-situ monitoring of carbon doped GaAs and of periodic carbon doped GaAs-AlAs structures grown by chemical beam epitaxyJoyce, T.B. et al. | 1995
- 399
-
The use of diethylsulphide for the doping of AlxGa1 - x As grown by chemical beam epitaxyPfeffer, T.L. et al. | 1995
- 404
-
Monocrystalline (100)-oriented ZnS layers grown on Si by molecular beam epitaxyWirthl, E. et al. | 1995
- 408
-
Epitaxial films of the 3D semiconductor CdS on the 2D layered substrate MX2 prepared by Van der Waals epitaxyLöher, T. et al. | 1995
- 414
-
Epitaxial growth and photoluminescence of hexagonal CdS1 - x Sexx alloyGrün, M. et al. | 1995
- 418
-
Type I-type II band offset transition of the ZnMgSe-ZnTe systemFerreira, S.O. et al. | 1995
- 422
-
Reflection high-energy electron diffraction controlled growth of ZnSe-(Zn, Mn)Se quantum well structuresHoffmann, N. et al. | 1995
- 427
-
Molecular beam epitaxial growth and segregation of Hg1 - x ZnxSe alloysEinfeldt, S. et al. | 1995
- 433
-
Interdiffusion of In, Te at the interface of molecular beam epitaxial grown CdTe-InSb heterostructuresKimata, M. et al. | 1995
- 439
-
InSe-GaSe heterointerfaces prepared by Van der Waals epitaxyLang, O. et al. | 1995
- 444
-
Chemical beam epitaxy of iron disilicide on siliconNatoli, J.Y. et al. | 1995
- 449
-
Hard heteroepitaxy of molecular beam epitaxial grown PbTe on off oriented GaAs(100) substratesSadowski, J. et al. | 1995
- 455
-
Crystal growth of column III nitrides and their applications to short wavelength light emittersAkasaki, I. et al. | 1995
- 462
-
Growth of AlxIn1 - xN single crystal films by microwave-excited metalorganic vapor phase epitaxyGuo, Q. et al. | 1995
- 467
-
In situ monitoring of the growth process in GaAs atomic layer epitaxy by gravimetric and optical methodsKoukitu, A. et al. | 1995
- 475
-
A theory for metalorganic vapor phase epitaxial selective growth on planar patterned substratesFujii, T. et al. | 1995
- 482
-
Growth behavior on V-grooved high Miller index GaAs substrates by metalorganic chemical vapor depositionKim, M.-S. et al. | 1995
- 489
-
A new lattice relaxation mode in InGaAs on GaAsFujii, T. et al. | 1995
- 495
-
Growth of InAs-GaSb strained layer superlattices.IIBooker, G.R. et al. | 1995
- 503
-
Recent developments in metalorganic precursors for metalorganic chemical vapour depositionJones, A.C. et al. | 1995
- 511
-
A new precursor for epitaxial growth of indium based semiconductorsRossetto, G. et al. | 1995
- 515
-
The n-type doping of GaAs-AlxGa1 - xAs and growth of two-dimensional electron gas structures with DEAIH-NMe3 as AI sourceHövel, R. et al. | 1995
- 521
-
lnvestigations on deep traps in GaAs and (AlxGa1 - x)As bulk layers grown by metalorganic vapour-phase epitaxy using the new alternative arsenic precursor diethyl-tert-butylarsinSpika, Z. et al. | 1995
- 527
-
Reduction of interface contamination in regrown GaAs on AlGaAs using a novel two-step HCl gas etching processKizuki, H. et al. | 1995
- 533
-
Growth temperature dependence of Zn diffusion in InP-InGaAs heterojunction bipolar transistor structures grown by metalorganic chemical vapor depositionKobayashi, T. et al. | 1995
- 538
-
Metalorganic vapor phase epitaxial grown heterointerfaces to GalnP with group-III and group-V exchangeProst, W. et al. | 1995
- 544
-
Drastic effects of hydrogen flow rate on growth characteristics and electrical-optical properties of InP grown by organometallic vapour phase epitaxy with TMIn and TBPFujiwara, Y. et al. | 1995
- 549
-
Effects of storage time of epi-ready InP: Fe substrates on the quality of metalorganic vapour phase epitaxial grown InPKnauer, A. et al. | 1995
- 554
-
Growth and characterization of two-dimensional GaP on Si by metalorganic chemical vapor depositionSoga, T. et al. | 1995
- 558
-
Ordering in GaInP grown at low temperaturesSu, L.C. et al. | 1995
- 564
-
Transport and reaction behaviour in Aix-2000 Planetary metalorganic vapour phase epitaxy reactorBergunde, T. et al. | 1995
- 570
-
Metalorganic vapor phase epitaxy of wide-gap II-VI semiconductors for optoelectronic applications: Current status and future trendsHeuken, M. et al. | 1995
- 580
-
Thermal dissociation of ditertiarybutylselenide and methylallylselenide and its impact on the growth of ZnSe by metalorganic vapour phase epitaxyKuhn, W.S. et al. | 1995
- 587
-
Synchrotron radiation excited growth of ZnTe using metalorganic sourcesOgata, T. et al. | 1995
- 592
-
Oxygen and tellurium impurities in zinc selenide grown by metalorganic vapour phase epitaxyGurskii, A.L. et al. | 1995
- 599
-
Growth of CaS thin films by solid source metalorganic chemical vapor depositionHelbing, R. et al. | 1995
- 604
-
Uniformity in (Hg, Mn)Te films grown by metalorganic vapour phase epitaxyHallam, T.D. et al. | 1995
- 610
-
Growth of Hg1 - xCdxTe epitaxial layers on (100) CdTe by chemical vapor transport under normal and reduced gravity conditionsWiedemeier, H. et al. | 1995
- 619
-
Reduction of autodoped gallium concentration in HgCdTe layers on GaAs grown by metalorganic vapor phase epitaxyNishino, H. et al. | 1995
- 624
-
Preparation of epitaxial PbTiO3 thin films by metalorganic vapor phase epitaxy under reduced pressureChen, Y.-F. et al. | 1995
- 630
-
Growth of FeS2 (pyrite) thin films on single crystalline substrates by low pressure metalorganic chemical vapour depositionThomas, B. et al. | 1995
- 636
-
Precise determination of the epitaxial orientation of a monomolecular layer organic film by scanning tunneling microscopyHoshino, A. et al. | 1995
- 641
-
Atomic force microscopy observation of the epitaxial growth of organic moleculesMatsushige, K. et al. | 1995
- 645
-
Molecular orientation of vapor-deposited films of long-chain molecules observed with atomic force microscopyTakiguchi, H. et al. | 1995
- 649
-
Pseudomorphic vanadyl-phthalocyanine and its stable orientation on KBrHashimoto, S. et al. | 1995
- 655
-
Effects of a lattice matching in hetero-epitaxially grown a-axis YBCO films on superconductivityIto, W. et al. | 1995
- 659
-
Liquid phase epitaxy of Bi2Sr2CaCu2Ox superconductor from a BiO1.5-SrO-CaO-CuO solutionHuang, Y. et al. | 1995
- 665
-
Author index| 1995
- 674
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Subject index| 1995
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Preface| 1995