The n-type and p-type doping of GaSb and AlGaSb grown by metalorganic molecular beam epitaxy (Englisch)
- Neue Suche nach: Yamamoto, K.
- Neue Suche nach: Yamamoto, K.
- Neue Suche nach: Asahi, H.
- Neue Suche nach: Inoue, K.
- Neue Suche nach: Miki, K.
- Neue Suche nach: Liu, X.F.
- Neue Suche nach: Marx, D.
- Neue Suche nach: Villaflor, A.B.
- Neue Suche nach: Asami, K.
- Neue Suche nach: Gonda, S.
In:
Journal of crystal growth
;
150
, 1-4
; 853-857
;
1995
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:The n-type and p-type doping of GaSb and AlGaSb grown by metalorganic molecular beam epitaxy
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Beteiligte:Yamamoto, K. ( Autor:in ) / Asahi, H. / Inoue, K. / Miki, K. / Liu, X.F. / Marx, D. / Villaflor, A.B. / Asami, K. / Gonda, S.
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Erschienen in:Journal of crystal growth ; 150, 1-4 ; 853-857
-
Verlag:
- Neue Suche nach: Elsevier
-
Erscheinungsort:Amsterdam [u.a.]
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Erscheinungsdatum:1995
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ISSN:
-
ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 38.31 / 33.61 / 35.90
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 535/3475
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Schlagwörter:
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Klassifikation:
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Datenquelle:
Inhaltsverzeichnis – Band 150, Ausgabe 1-4
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Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
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Twenty years of molecular beam epitaxyCho, A.Y. et al. | 1995
- 7
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Less than 10 defects/cm^2 m in molecular beam epitaxy grown GaAs by arsenic crackingIzumi, S. / Hayafuji, N. / Sonoda, T. / Takamiya, S. et al. | 1995
- 7
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Less than 10 defects-cm2 - mm in molecular beam epitaxy grown GaAs by arsenic crackingIzumi, S. et al. | 1995
- 13
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Arsenic-free GaAs substrate preparation and direct growth of GaAs-AlGaAs multiple quantum well without buffer layerIizuka, K. et al. | 1995
- 18
-
In-situ Al0.24Ga0.24In0.52As surface cleaning procedure using hydrogen radicals for molecular beam epitaxy regrowthKünzel, H. et al. | 1995
- 23
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Surface reconstructions and growth mode transitions of AlAs(100)Dabiran, A.M. et al. | 1995
- 28
-
Formation and characterization of GaAs-As superlattice grown by molecular beam epitaxy at low substrate temperatureCheng, T.M. et al. | 1995
- 33
-
Surface reconstruction of sulfur-terminated GaAs(001) observed during annealing process by scanning tunneling microscopyTsukamoto, S. et al. | 1995
- 38
-
Studies on interface roughness scattering effects in molecular beam epitaxy grown resonant tunneling structuresHoshida, T. et al. | 1995
- 43
-
Influence of growth related thickness fluctuations on the spectral and lateral luminescence intensity distribution in GaAs quantum wellsJahn, U. et al. | 1995
- 49
-
Observation of spatially-indirect transition and accurate determination of band offset ratio by excitation spectroscopy on GaAs-AlGaAs quantum wells lightly doped with Be acceptorsMuraki, K. et al. | 1995
- 54
-
In situ film thickness and temperature control of molecular beam epitaxy growth by pyrometric interferometryBoebel, F.G. et al. | 1995
- 62
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Simultaneous monitoring of different surface processes on different streaks of the reflection high energy electron diffraction patternBraun, W. et al. | 1995
- 68
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Surface diffusion length of Ga adatoms in molecular-beam epitaxy on GaAs(100)-(110) facet structuresLopez, M. et al. | 1995
- 73
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Surface flattening by annealing after molecular beam epitaxy growth revealed by in-situ secondary electron microscopyOsaka, J. et al. | 1995
- 77
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Reflection high-energy electron diffraction intensity oscillations during growth of (Al,Ga)As on GaAs(111)ASato, K. et al. | 1995
- 81
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90 double reflection high-energy electron diffraction experiments on vicinal surfaces of GaAsNoerenberg, H. / Daeweritz, L. / Schuetzenduebe, P. / Schoenherr, H.-P. et al. | 1995
- 81
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90(degree) double reflection high-energy electron diffraction experiments on vicinal surfaces of GaAsNörenberg, H. et al. | 1995
- 85
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In-situ X-ray imaging of III-V strained-layer relaxation processesWhitehouse, C.R. et al. | 1995
- 92
-
In-situ second-harmonic generation study of the molecular beam epitaxy growth of GaAsKimura, T. et al. | 1995
- 96
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In-situ photoluminescence and capacitance-voltage characterization of InAlAs-InGaAs regrown heterointerfaces by molecular beam epitaxySaitoh, T. et al. | 1995
- 101
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Structural transformation of As-stabilized surfaces caused by Ga-deposition detected by time-resolved surface photo-absorptionUwai, K. et al. | 1995
- 107
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Nucleation of islands in GaAs molecular beam epitaxy studied by in-situ scanning electron microscopyInoue, N. et al. | 1995
- 110
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Real-time scanning microprobe reflection high-energy electron diffraction observations of the cleaning process of GaAs substratesMorishita, Y. et al. | 1995
- 117
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Simultaneous reflection high-energy electron diffraction oscillations and mass spectroscopy investigations during molecular beam epitaxy growth of (001) GaAs - Smooth surfaces or stoichiometric films?Heyn, Ch et al. | 1995
- 123
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Role of the substrate deoxidation process in the growth of strained InAs-InP heterostructuresBruni, M.R. et al. | 1995
- 128
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Studies of large scale unstable growth formed during GaAs(001) homoepitaxyOrme, C. et al. | 1995
- 136
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Surface structure of GaAs(001)-(2 x 4) a, b and g phasesIchimiya, A. et al. | 1995
- 136
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Surface structure of GaAs(001)-(2 x 4) , and gamma phasesIchimiya, A. / Xue, Q.-K. / Hashizume, T. / Sakurai, T. et al. | 1995
- 144
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GaAs initial growth on InAs (001) vicinal surfaces observed by scanning tunneling microscopyIkoma, N. et al. | 1995
- 148
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Unified model for first-order transition and electrical properties of InAs (001) surfaces based on atom-resolved scanning tunneling microscopy imagingYamaguchi, H. et al. | 1995
- 152
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Atomic force microscope observation of the initial stage of InAs growth on GaAs substratesKitabayashi, H. et al. | 1995
- 158
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Theoretical investigation of adsorption behavior during molecular beam epitaxy growth of GaAs: Ab initio based microscopic calculationShiraishi, K. et al. | 1995
- 163
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Ab initio study on the As-stabilized surface structure in AlAs molecular beam epitaxyHiraoka, Y.S. et al. | 1995
- 168
-
Kinetic Ising model of site-correlated adsorption and surface diffusion in molecular-beam epitaxyNakayama, H. et al. | 1995
- 176
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Molecular dynamics simulation of (100)InGaAs-GaAs strained-layer relaxation processesAshu, P.A. et al. | 1995
- 180
-
Diffusion constant of Ga adatom on GaAs (001) surface: Molecular dynamics calculationsPalma, A. et al. | 1995
- 185
-
Indium surface segration in InGaAs-based structures prepared by molecular beam epitaxy and atomic layer molecular beam epitaxyBosacchi, A. et al. | 1995
- 190
-
Role of step orientation and step-step interaction in the in-situ creation of laterally confined semiconductor nanostructures via growth: A simulated annealing study on a parallel computing platformViswanathan, R. et al. | 1995
- 197
-
The characterization of the growth of sub-monolayer coverages (1-200th to 1 monolayer) of Si and Be on GaAs(001): A reflectance anisotropy spectroscopy and reflection high-energy electron diffraction studyWoolf, D.A. et al. | 1995
- 202
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A scanning tunnelling microscopy study of the deposition of Si on GaAs(001); implications for Si d-dopingAvery, A.R. et al. | 1995
- 202
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A scanning tunnelling microscopy study of the deposition of Si on GaAs(001); implications for Si -dopingAvery, A. R. / Holmes, D. M. / Sudijono, J. L. / Jones, T. S. et al. | 1995
- 209
-
Diffusion of Si-acceptor in -doped GaAs grown on GaAs(111)A by molecular beam epitaxyHirai, M. / Ohnishi, H. / Fujita, K. / Vaccaro, P. et al. | 1995
- 209
-
Diffusion of Si-acceptor in d-doped GaAs grown on GaAs(111)A by molecular beam epitaxyHirai, M. et al. | 1995
- 214
-
Atomic-scale controlled incorporation of ultrahigh-density Si doping sheets in GaAsDäweritz, L. et al. | 1995
- 221
-
Heavily carbon-doped p-type (In)GaAs grown by gas-source molecular beam epitaxy using diiodomethaneTomioka, T. et al. | 1995
- 227
-
Tin as an n-type dopant in the molecular beam epitaxial growth of GaAs(111)AHu, S.J. et al. | 1995
- 231
-
Se-doped AlGaAs grown on GaAs(111)A by molecular beam epitaxyOhnishi, H. et al. | 1995
- 236
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Carbon doping into GaAs using combined ion beam and molecular beam epitaxy methodIida, T. et al. | 1995
- 241
-
Carbon background in P-based III-V semiconductors grown by metalorganic molecular beam epitaxy using ethyl-metalorganic sourcesYoshimoto, M. et al. | 1995
- 246
-
p-Type GaAs doped by diiodomethane (CI2H2) in molecular beam epitaxy, metalorganic molecular beam epitaxy, and chemical beam epitaxyLi, N.Y. et al. | 1995
- 246
-
p-Type GaAs doped by diiodomethane (Cl~2H~2) in molecular beam epitaxy, metalorganic molecular beam epitaxy, and chemical beam epitaxyLi, N. Y. / Dong, H. K. / Tu, C. W. / Geva, M. et al. | 1995
- 251
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High carbon doping of Ga1-xInxAs (xMazuelas, A. et al. | 1995
- 251
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High carbon doping of Ga~1~-~xIn~xAs (x = 0.01) grown by molecular beam epitaxyMazuelas, A. / Maier, M. / Wagner, J. / Trampert, A. et al. | 1995
- 256
-
The injected carbon impurities in intermixed GaAs-AlAs multiple quantum wells during thermal treatmentOh, Y.T. et al. | 1995
- 261
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Shallow donors and deep levels in GaAs grown by atomic layer molecular beam epitaxyBosacchi, A. et al. | 1995
- 266
-
Quantum transport measurements on Si d- and slab-doped In0.53Ga0.47As grown by molecular beam epitaxyMcElhinney, M. et al. | 1995
- 266
-
Quantum transport measurements on Si - and slab-doped In~0~.~5~3Ga~0~.~4~7As grown by molecular beam epitaxyMcElhinney, M. / Skuras, E. / Holmes, S. N. / Johnson, E. A. et al. | 1995
- 271
-
Negative magnetoresistance in Si atomic-layer-doped GaAsGoto, H. et al. | 1995
- 277
-
New frontiers of molecular beam epitaxy with in-situ processingHong, M. et al. | 1995
- 285
-
GaAs-AlGaAs quantum wire lasers fabricated by cleaved edge overgrowthWegscheider, W. et al. | 1995
- 293
-
Strained AlGaInP quantum wire lasersPearah, P.J. et al. | 1995
- 299
-
InxGa1-xAs-GaAs quantum wire structures grown on GaAs (100) patterned substrates with (100) ridgesLiu, Y. et al. | 1995
- 306
-
Direct molecular beam epitaxial growth of low-dimensional structures on reactive ion etched surfacesRöhr, T. et al. | 1995
- 311
-
In-situ fabrication of three-dimensionally confined GaAs and InAs volumes via growth on non-planar patterned GaAs(001) substratesKonkar, A. et al. | 1995
- 317
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Self-formation of 100 nm scale wire structures during molecular beam epitaxial growth of AlGaAs on patterned substratesKadoya, Y. et al. | 1995
- 322
-
Control of ridge shape for the formation of nanometer-scale GaAs ridge quantum wires by molecular beam epitaxyKoshiba, S. et al. | 1995
- 327
-
Fabrication of InGaAs ridge quantum wires by selective molecular beam epitaxy and their characterizationFujikura, H. et al. | 1995
- 332
-
Fabrication of GaAs quantum wires by metalorganic molecular beam epitaxy and their optical propertiesNomura, Y. et al. | 1995
- 336
-
Organized growth of GaAs-AlAs lateral structures on atomic step arrays: What is possible to do?Etienne, B. et al. | 1995
- 341
-
InGaAs-InAlAs in-plane superlattices grown on slightly misoriented (110) InP substrates by molecular beam epitaxyNakata, Y. et al. | 1995
- 346
-
Transmission electron microscopic evaluation of InGaAs-InAlAs in-plane superlattices grown on slightly misoriented (110)InP substrates by molecular beam epitaxyUeda, O. et al. | 1995
- 351
-
Optical investigation of the self-organized growth of InAs-GaAs quantum boxesGérard, J.M. et al. | 1995
- 357
-
Realization of optically active strained InAs island quantum boxes on GaAs(100) via molecular beam epitaxy and the role of island induced strain fieldsXie, Q. et al. | 1995
- 364
-
Optimized InAs quantum effect device structures grown by molecular beam epitaxyYoh, K. et al. | 1995
- 370
-
Selective growth and other applications of hydrogen-assisted molecular beam epitaxyKawabe, M. et al. | 1995
- 377
-
Selective area growth of GaAs using a Ga beam with a step-function lateral intensity profileTomita, N. et al. | 1995
- 383
-
Electrical properties of lateral npn junctions using molecular beam epitaxy grown Si-doped GaAs on patterned substratesTakamori, T. et al. | 1995
- 388
-
Transmission electron microscopy observation of GaAs-Al 0.3)Ga0.7As T-shaped quantum well structure fabricated by glancing angle molecular beam epitaxy on GaAs(100) reverse-mesa etched substratesTanaka, M. et al. | 1995
- 394
-
Dependence of InP and GaAs chemical beam epitaxial growth rate on substrate orientations; applications to selective area epitaxyLegay, P. et al. | 1995
- 399
-
Symmetric InP mirror facets fabricated by selective chemical beam epitaxy on reactive-ion-etched sidewallsGotoda, M. et al. | 1995
- 404
-
Stability of GaAs oxide under metalorganic molecular beam epitaxy processHiratani, Y. et al. | 1995
- 409
-
Extremely flat interfaces in GaAs-AlGaAs quantum wells with high Al content (0.7) grown on GaAs (411)A substrates by molecular beam epitaxyShimomura, S. et al. | 1995
- 415
-
Characterization of GaAs-AlAs interfacial atomic step structures on a (411)A-oriented substrate by transmission electron microscopeTsuda, Y. et al. | 1995
- 421
-
Evaluation of the highly coherent surface structure of the GaAs (411)A plane using scanning tunneling microscopyYamada, T. et al. | 1995
- 425
-
Scanning tunneling microscopy of the GaAs (311)A surface reconstructionWassermeier, M. et al. | 1995
- 431
-
Optical anisotropy of (11N) and vicinal (001) quantum wellsKajikawa, Y. et al. | 1995
- 436
-
Strong enhancement of the optical and electrical properties, and spontaneous formation of an ordered superlattice in (111)B AlGaAsChin, A. et al. | 1995
- 441
-
Structural analysis of AlGaAs quantum wires on vicinal (110)GaAs by transmission electron microscopy and energy dispersive X-ray spectroscopyTakeuchi, M. et al. | 1995
- 446
-
Molecular beam epitaxy growth and properties of GaAs-(AlGa)As p-type heterostructures on (100), (011), (111)B, (211)B, (311)B, and (311)A oriented GaAsHenini, M. et al. | 1995
- 451
-
The growth and physics of ultra-high-mobility two-dimensional hole gas on (311)A GaAs surfaceHenini, M. et al. | 1995
- 455
-
Silicon compensation and scattering mechanisms in two-dimensional electron gases on (110)GaAsHolland, M.C. et al. | 1995
- 460
-
Surfactant-mediated molecular-beam epitaxy of III-V strained-layer heterostructuresTournié, E. et al. | 1995
- 467
-
Growth of InGaAs-GaAs heterostructures with abrupt interfaces on the monolayer scaleGérard, J.-M. et al. | 1995
- 473
-
Effects of alloy composition on the As desorption from and adsorption on strained InxGa1-xAs surfacesEkenstedt, M.J. et al. | 1995
- 478
-
Magnitude and polarity of strain-induced fields in pseudomorphic In0.2Ga0.8As quantum well structures on (112) GaAs substratesSun, D. et al. | 1995
- 482
-
Aspects of low heterostructure symmetry in (311)A (In.Ga)As-GaAsIlg, M. et al. | 1995
- 487
-
Preferential migration of indium atoms on the (411)A plane in InGaAs grown on GaAs channeled substrates by molecular beam epitaxyKitada, T. et al. | 1995
- 492
-
Non-linear As(P) incorporation in GaAs1-yPy on GaAs and InAs1-yPy on InPCunningham, J.E. et al. | 1995
- 497
-
Effect of atomic hydrogen in highly lattice-mismatched molecular beam epitaxyChun, Y.J. et al. | 1995
- 503
-
Strain relaxation in InGaAs-GaAs quantum wells grown on GaAs (111)A substratesVaccaro, P.O. et al. | 1995
- 508
-
Precise thickness measurement within a few monolayers by X-ray diffraction from InGaAs-GaAs strained-layer superlatticesSato, M. et al. | 1995
- 513
-
Phonon behavior and interfacial stress in the strained (InAs) m)-(GaAs)n ultrathin superlatticesEmura, S. et al. | 1995
- 518
-
Molecular beam epitaxial growth and thermodynamic analysis of InGaAs and InAlAs lattice matched to InPMcElhinney, M. et al. | 1995
- 523
-
Generation mechanism of CuAu-I type ordered structures in InGaAs crystals grown on (110) InP substrates by molecular beam epitaxyUeda, O. et al. | 1995
- 528
-
Effect of Asi on the optical properties of Ga1-xInxAs-InP grown by molecular beam epitaxyPopp, M. et al. | 1995
- 533
-
Effects of substrate misorientation on triple-period ordering in AlInAsGomyo, A. et al. | 1995
- 539
-
Chemical beam epitaxial growth of high optical quality AlGaAs - The influence of precursor purity on material propertiesFreer, R.W. et al. | 1995
- 546
-
Effects of cation diffusion during chemical etchingChiu, T.H. et al. | 1995
- 551
-
Low temperature etching of GaAs substrates and improved morphology of GaAs grown by metalorganic molecular beam epitaxy using trisdimethylaminoarsenic and triethylgalliumMarx, D. et al. | 1995
- 557
-
Reduction of carbon incorporation in the in-situ selective-area epitaxy of GaAs by metalorganic molecular beam epitaxy using tris-dimethylaminoarsineYoshida, S. et al. | 1995
- 562
-
Selectively regrown carbon-doped (Al)GaAs by chemical beam epitaxy with novel gas sourcesLi, N.Y. et al. | 1995
- 568
-
Selective-area epitaxial growth of GaAs by gas-source molecular-beam epitaxy using metal gallium and trisdimethylaminoarsineGoto, S. et al. | 1995
- 574
-
Gas source molecular beam epitaxial growth of GaP-AlP modulated superlattices and their optical propertiesKim, J.H. et al. | 1995
- 579
-
Gas source molecular beam epitaxy grown InGaAsP-InGaAlAs multi-quantum well structures with wide range continuum band-offset controlMakita, K. et al. | 1995
- 585
-
Characterization of heavily carbon-doped GaAs with a hole concentration of the order of 1021 cm 3 grown by metalorganic molecular beam epitaxy and its application to InGaP-GaAs heterojunction bipolar transistorsShirakashi, J. et al. | 1995
- 591
-
Effect of source-supply interruptions on the interface abruptness in gas source molecular beam epitaxy grown InGaAs-InP heterostructuresMozume, T. et al. | 1995
- 597
-
InGaAsP-InAlAs type I-type II multiple quantum well structures grown by gas source molecular beam epitaxyKawamura, Y. et al. | 1995
- 602
-
A new method of flux calibration for gas source molecular beam epitaxy of InP and its application to migration enhanced epitaxyOzeki, T. et al. | 1995
- 607
-
Gas-source molecular beam epitaxy of lattice-matched GaxIn1-xAsyP1-y on GaAs over the entire composition rangeZhang, G. et al. | 1995
- 612
-
Inducement of GaAs growth by electron beam irradiation on GaAs covered by native oxideWatanabe, K. et al. | 1995
- 616
-
Study on dimer density evolution during GaAs short-pulse supersonic nozzle beam epitaxy on (2x4)gamma initial surface by millisecond time-resolved reflectance differenceCui, J. / Zhang, S. / Tanaka, A. / Aoyagi, Y. et al. | 1995
- 616
-
Study on dimer density evolution during GaAs short-pulse supersonic nozzle beam epitaxy on (2 x 4)g initial surface by millisecond time-resolved reflectance differenceCui, J. et al. | 1995
- 622
-
Fast reconstruction transitions and fast surface reactions in short-pulse supersonic nozzle beam epitaxyZhang, S. et al. | 1995
- 627
-
Chemical beam epitaxial growth of InGaAs on GaAs(100) using triethylgallium, trimethylindium and unprecracked monoethylarsineRo, J.-R. et al. | 1995
- 633
-
Growth of GaxIn1-xAs-InP thin layer structures by chemical beam epitaxyLeys, M.R. et al. | 1995
- 638
-
The etching effect of trisdimethylaminoantimony on (001) planar substratesVillaflor, A.B. et al. | 1995
- 644
-
The use of diethylsulphide for the doping of GaAs, AlGaAs and InGaAs grown by chemical beam epitaxyJoyce, T.B. et al. | 1995
- 649
-
Effect of the AlAs surface reconstruction on properties of Ge grown on AlAsMaeda, T. et al. | 1995
- 654
-
Rearrangement of misfit dislocations in GaAs on Si by post-growth annealingTamura, M. et al. | 1995
- 661
-
Effect of atomic hydrogen irradiation in low-temperature GaAs-Si heteroepitaxyOhta, S. et al. | 1995
- 665
-
Initial growth of GaAs on vicinal Si(110) substratesYodo, T. et al. | 1995
- 671
-
Selective growth of micro GaAs dots on Si by molecular beam epitaxyMaeda, H. et al. | 1995
- 677
-
Suppression of threading dislocation generation in GaAs-on-Si with strained short-period superlatticesTakagi, Y. et al. | 1995
- 681
-
Reduction of dislocation density by thermal annealing for GaAs-GaSb-Si heterostructureUchida, H. et al. | 1995
- 685
-
GaAs on Si(111) with a layered structure GaSe buffer layerPalmer, J.E. et al. | 1995
- 691
-
Migration-enhanced pulsed chemical beam epitaxy of GaP on Si(001)Dietz, N. et al. | 1995
- 696
-
Growth and characterization of GaAs-Si-GaAs heterostructuresThordson, J.V. et al. | 1995
- 701
-
ZnMgSSe based laser diodesItoh, S. et al. | 1995
- 707
-
Growth of ZnS and ZnSSe by gas-source molecular beam epitaxy using hydride group VI sourcesImaizumi, M. et al. | 1995
- 712
-
Recombination mechanisms in photopumped Zn1-xCdxSe-ZnSe multiple quantum well lasersCalcagnile, L. et al. | 1995
- 718
-
Blue and green light-emitting diode structures grown by molecular beam epitaxy on ZnSe substratesEason, D. et al. | 1995
- 725
-
Growth and characterization of wide bandgap Zn1-xHgxSeHara, K. et al. | 1995
- 729
-
p-Type and n-type doping of ZnSe: Effects of hydrogen incorporationFisher, P.A. et al. | 1995
- 734
-
Metalorganic molecular beam epitaxy growth of ZnSe with new Zn and Se precursors without precrackingSato, G. et al. | 1995
- 738
-
Growth of ZnSe-ZnMgSSe quantum well structures by metalorganic molecular beam epitaxy under in situ observation of reflection high energy electron diffraction intensity oscillationSuda, J. et al. | 1995
- 743
-
Structural and electrical properties of ZnSe laser diodes optimized by transmission electron microscopy, reflection high energy electron diffraction, X-ray diffraction and C-V profilingBehr, T. et al. | 1995
- 749
-
Dependence of the structural properties of ZnSe on GaAs substrate orientationParbrook, P.J. et al. | 1995
- 755
-
Optimum growth conditions of molecular beam epitaxial growth of ZnSe at a low temperatureMatsumura, N. et al. | 1995
- 760
-
Molecular beam epitaxial growth and characterization of ZnSTe epilayers and ZnSTe-ZnSe superlattices on Si substratesChan, Y.W. et al. | 1995
- 765
-
Influence of growth parameters on the properties of ZnSe-GaAs(001) heterostructuresVanzetti, L. et al. | 1995
- 770
-
Green emission enhanced by Te isoelectronic traps in ZnSe grown by molecular beam epitaxyTakojima, N. et al. | 1995
- 775
-
Structural investigation of II-VI compound semiconductor quantum wires using triple-axis X-ray diffractometryDarhuber, A.A. et al. | 1995
- 779
-
Molecular beam epitaxy grown CdTe/-Sn/CdTe single quantum well structuresVillaflor, A. B. / Shimomura, K. / Kawamura, K. / Belogorokhov, A. I. et al. | 1995
- 779
-
Molecular beam epitaxy grown CdTe-a-Sn-CdTe single quantum well structuresVillaflor, A.B. et al. | 1995
- 785
-
Crystallinity improvement of HgCdTe on GaAs grown by molecular beam epitaxySasaki, T. et al. | 1995
- 790
-
The development of low voltage room temperature continuous wave laser diodesGunshor, R.L. et al. | 1995
- 797
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Lowering of band-gap energy in heavily nitrogen-doped ZnSeZhu, Z. et al. | 1995
- 803
-
Growth and characterization of N-doped ZnSxSe1-x (0 <= x < 0.3) by molecular beam epitaxyTeraguchi, N. et al. | 1995
- 803
-
Growth and characterization of N-doped ZnS~xSe~1~-~x (0 x < 0.3) by molecular beam epitaxyTeraguchi, N. / Hirata, S. / Mouri, H. / Tomomura, Y. et al. | 1995
- 807
-
Thermal stability of nitrogen-doped ZnSe grown by molecular beam epitaxyNishikawa, Y. et al. | 1995
- 812
-
Characterization of N-doped MgZnSSe compound system grown on intentionally misoriented GaAs substrates by molecular beam epitaxyIchimura, Y. et al. | 1995
- 817
-
Li-acceptor doping in ZnS-GaAs by post-heated molecular beam epitaxyYoneta, M. et al. | 1995
- 823
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Reflection high-energy electron diffraction study of the heterointerface formation of ZnSe-ZnTeYao, T. et al. | 1995
- 828
-
Reduction of p-ZnSe-p-GaAs non-ohmic barrier by inserting a GaN buffer layerHishida, Y. et al. | 1995
- 833
-
Gas source molecular beam epitaxy growth of InAlP band offset reduction layers on p-type ZnSeIwata, K. et al. | 1995
- 838
-
Accurate control of As and Sb incorporation ratio during solid-source molecular-beam epitaxyZhang, Y.-H. et al. | 1995
- 844
-
Electrical and photoluminescence properties of undoped GaSb prepared by molecular beam epitaxy and atomic layer molecular beam epitaxyBosacchi, A. et al. | 1995
- 849
-
(111) InAs-GaInSb strained-layer superlattice growth investigationReich, D.A. et al. | 1995
- 853
-
The n-type and p-type doping of GaSb and AlGaSb grown by metalorganic molecular beam epitaxyYamamoto, K. et al. | 1995
- 858
-
Optical and structural investigations of intermixing reactions at the interfaces of InAs-AlSb and InAs-GaSb quantum wells grown by molecular-beam epitaxySchmitz, J. et al. | 1995
- 863
-
Formation of InSb nanocrystals on Se-terminated GaAs(001)Watanabe, Y. et al. | 1995
- 868
-
A Raman scattering study on the interface sharpness of InAs-AlSb-GaSb-AlSb polytype superlattices grown by molecular beam epitaxyYano, M. et al. | 1995
- 874
-
Metalorganic molecular beam epitaxy of GaSb on patterned GaSb substrates using triethylgallium and Sb4Marx, D. et al. | 1995
- 879
-
Structural and transport properties of InAs-AlSb superlatticesChow, D.H. et al. | 1995
- 883
-
Hole accumulation in (In)GaSb-AlSb quantum wells induced by the Fermi-level pinning of an InAs surfaceMakimoto, T. et al. | 1995
- 887
-
GaN based III-V nitrides by molecular beam epitaxyMorkoç, H. et al. | 1995
- 892
-
The growth and properties of group III nitridesFoxon, C.T. et al. | 1995
- 897
-
Effects of V-III supply ratio on improvement of crystal quality of zincblende GaN grown by gas source molecular beam epitaxy using RF-radical nitrogen sourceKikuchi, A. et al. | 1995
- 902
-
Analysis and optimization of the electron cyclotron resonance plasma for nitride epitaxyOhtani, A. et al. | 1995
- 908
-
GaN growth by a controllable RF-excited nitrogen sourceHove, J.M.Van et al. | 1995
- 912
-
Molecular beam epitaxy of gallium nitride by electron cyclotron resonance plasma and hydrogen azideOberman, D.B. et al. | 1995
- 916
-
In situ monitoring of reflection high-energy electron diffraction oscillation during the growth of gallium nitride films by gas-source molecular beam epitaxyMoriyasu, Y. et al. | 1995
- 921
-
Prospects of SiGe heterodevicesKasper, E. et al. | 1995
- 926
-
Elongated dimer structure for Ge overlayers on Si(001): Symmetric or asymmetric?Oyanagi, H. et al. | 1995
- 931
-
Local structure of strain-compensated epitaxial Si1-x-yGe x)Cy layers on Si(001) grown with molecular beam epitaxyOsten, H.J. et al. | 1995
- 934
-
Low-temperature heteroepitaxial growth of cubic SiC on Si using hydrocarbon radicals by gas source molecular beam epitaxyHatayama, T. et al. | 1995
- 939
-
Suppression of Ge surface segregation during Si molecular beam epitaxy by atomic and molecular hydrogen irradiationNakagawa, K. et al. | 1995
- 944
-
Surfactant effect of H atoms on the suppression of Ge segregation in Si overgrowth on Ge(n ML)-Si(100) substrates by gas source molecular beam epitaxyZaima, S. et al. | 1995
- 950
-
Growth and characterization of Si-SiGe microstructures on patterned Si substrates using gas source molecular beam epitaxyZhang, J. et al. | 1995
- 955
-
Atom-rearrangement in Ge layer grown on Si substrate during anneal observed in real time by coaxial impact collision ion scattering spectroscopySaitoh, T. et al. | 1995
- 960
-
A scanning tunneling microscopy study of epitaxial Ge growthTsui, F. et al. | 1995
- 964
-
Molecular beam epitaxy growth of Ge on Si(111) substrates covered by a SiO2 maskZhang, X. et al. | 1995
- 969
-
Selective epitaxial growth of Ge and SiGe using Si2H6 gas and Ge solid source molecular beam epitaxyWado, H. et al. | 1995
- 974
-
Phase transformation of crystallinity of Si1-xGex layers grown on Si(001) by low temperature molecular beam epitaxyLee, S.-C. et al. | 1995
- 980
-
Simultaneous Si molecular beam epitaxy and high-dose ion implantationIshikawa, Y. et al. | 1995
- 984
-
Low temperature silicon epitaxy using supersonic molecular beamsMalik, R. et al. | 1995
- 989
-
Temperature dependence of boron surface segregation in Si molecular beam epitaxial growth on the Si(111) 3 x 3-B surfaceKumagai, Y. / Ishimoto, K. / Mori, R. / Hasegawa, F. et al. | 1995
- 989
-
Temperature dependence of boron surface segregation in Si molecular beam epitaxial growth on the Si(111) (bent radical)3 x (bent radical)3-B surfaceKumagai, Y. et al. | 1995
- 994
-
Kinetics of arsenic doping in silicon by ultra-high-vacuum chemical vapor depositionSugiyama, N. et al. | 1995
- 999
-
The effect of in situ boron doping on the strain relaxation of Si0.8Ge0.2:B-Si heterostructure grown by molecular beam epitaxyLee, S.-C. et al. | 1995
- 1005
-
Epitaxial growth of Si1-x-yGexCy by ultrahigh vacuum chemical vapor deposition using disilane, germane and acetyleneHiroi, M. et al. | 1995
- 1011
-
Growth and properties of high-mobility two-dimensional hole gases in Ge on relaxed Si-SiGe, Ge-SiGe buffers and Ge substratesNützel, J.F. et al. | 1995
- 1015
-
Reflectance anisotropy and reflection high-energy electron diffraction intensity oscillations during gas source molecular beam epitaxy growth of Si and SiGe on Si(001)Zhang, J. et al. | 1995
- 1020
-
Characterization of termination layer of SiGe system through signatures of Si-O and Ge-O speciesPrabhakaran, K. et al. | 1995
- 1025
-
Luminescence of strained Si1-xGex-Si quantum wells and microstructuresFukatsu, S. et al. | 1995
- 1033
-
Crucial role of Si buffer layer quality in the photoluminescence efficiency of strained Si1-xGex-Si quantum wellsMine, T. et al. | 1995
- 1038
-
Photoluminescence investigation on growth mode changeover in Ge-rich Si1-xGex-Si strained quantum wellsSunamira, H. et al. | 1995
- 1045
-
Band-gap luminescence in strain-symmetrized Sim-Gen superlattices grown by molecular beam epitaxy using gaseous Si 2H6 and solid GeZhu, X. et al. | 1995
- 1050
-
SiGe quantum wells on (110) Si grown by molecular beam epitaxyBrunner, J. et al. | 1995
- 1055
-
Cavity mode luminescence of strained Si1-xGex-Si quantum wells grown on a buried-oxide substrateFukatsu, S. et al. | 1995
- 1060
-
SiGe wires and dots grown by local epitaxyBrunner, J. et al. | 1995
- 1065
-
Strain-induced lateral band gap modulation in Si1-xGe x)-Si quantum well and quantum wire structuresUsami, N. et al. | 1995
- 1070
-
Cathodoluminescence investigation of SiGe quantum wires fabricated on V-groove patterned Si substratesHiggs, V. et al. | 1995
- 1074
-
Effect of adjacent insulating oxide layers on superconductivity of one unit cell thick YBa~2Cu~3O~7~-~ layers in PrBa~2Cu~3O~7~-~/YBa~2Cu~3O~7~-~/insulating oxide trilayersBando, Y. / Terashima, T. / Shimura, K. / Daitoh, Y. et al. | 1995
- 1074
-
Effect of adjacent insulating oxide layers on superconductivity of one unit cell thick YBa2Cu3O7-d layers in PrBa2Cu3O7-d-YBa2Cu3O 7-d)-insulating oxide trilayersBando, Y. et al. | 1995
- 1080
-
Low-temperature nucleation and the heteroepitaxial growth of ultra-thin films of Sr and Ba oxidesPindoria, G. et al. | 1995
- 1086
-
Preparation of BaBiO3 thin films using an oxygen radical beam sourceIyori, M. et al. | 1995
- 1090
-
Ferroelectric phase transition in BaTiO3 filmsYoneda, Y. et al. | 1995
- 1094
-
Bi2Sr2Can-1CunOy thin films by growth interruption techniqueIshibashi, T. et al. | 1995
- 1098
-
Ordering of sulfur interlayer in molecular beam epitaxy-grown SrF2-S-GaAs(110)A and BSugiyama, M. et al. | 1995
- 1104
-
Characterization of ferroelectric BaMgF4 films grown on AlGaAs-GaAs(100) high-electron-mobility transistor structuresOhmi, S. et al. | 1995
- 1108
-
Morphology of thin SrF2 films on InP(111) studied by reflection high-energy electron diffractionHeun, S. et al. | 1995
- 1115
-
High-quality CdF2 layer growth on CaF2-Si(111)Izumi, A. et al. | 1995
- 1119
-
Growth by molecular beam epitaxy and structural study of lattice matched MgxCa1-xF2 films on siliconYakovlev, N.L. et al. | 1995
- 1122
-
X-ray absorption fine structure studies of sulfur interlayers in molecular beam epitaxy grown SrF2-S-GaAs(111)Maeyama, S. et al. | 1995
- 1126
-
Magnetic superlattices: Molecular beam epitaxial growth and properties of artificially and naturally-layered structuresFarrow, R.F.C. et al. | 1995
- 1132
-
Heteroepitaxy of ferromagnetic MnAs thin films on (001) GaAs: Template effects and epitaxial orientationsTanaka, M. et al. | 1995
- 1139
-
Epitaxial ferromagnetic (t MnAl-Co) and (Co-CoAl) multilayers on GaAs (001) grown by molecular beam epitaxyBoeck, J.De et al. | 1995
- 1139
-
Epitaxial ferromagnetic ( MnAl/Co) and (Co/CoAl) multilayers on GaAs (001) grown by molecular beam epitaxyDe Boeck, J. / Bruynseraede, C. / Bender, H. / Van Esch, A. et al. | 1995
- 1144
-
Fabrication and magneto-optical properties of epitaxial ferromagnetic Mn1-xSb thin films grown on GaAs and sapphireAkinaga, H. et al. | 1995
- 1150
-
Epitaxial growth of thick pseudomorphic NiAl metal films on GaAs by migration enhanced epitaxyWeckwerth, M.V. et al. | 1995
- 1154
-
Elastic anomalies in single crystal copper-nickel superlattices grown by molecular beam epitaxySakaue, K. et al. | 1995
- 1159
-
Al growth on Si(001) observed by scanning tunneling microscopyShimizu, N. et al. | 1995
- 1164
-
Initial stages of Ag growth on Sb-terminated GaAs(001)Maeda, F. et al. | 1995
- 1169
-
Gold growth on Si(111) (bent radical)3 x (bent radical)3 Ag and (bent radical)3 x (bent radical)3 Au surfacesIchimiya, A. et al. | 1995
- 1169
-
Gold growth on Si(111) 3 x 3 Ag and 3 x 3 Au surfacesIchimiya, A. / Nomura, H. / Ito, Y. / Iwashige, H. et al. | 1995
- 1175
-
Molecular beam epitaxial growth and characterization of epitaxial GaSe films on (001)GaAsKojima, N. et al. | 1995
- 1180
-
Van der Waals epitaxy on hydrogen-terminated Si(111) surfaces and investigation of its growth mechanism by atomic force microscopeUeno, K. et al. | 1995
- 1186
-
Thermal mismatch strain relaxation of epitaxial IV-VI-Si(111) structures on multiple temperature cycling to cryogenic temperaturesZogg, H. et al. | 1995
- 1190
-
A novel method for the study of strain relaxation in lattice-mismatched heteroepitaxy: Ultra-high vacuum scanning tunneling microscopy combined with in situ reflection high-energy electron diffractionFrank, N. et al. | 1995
- 1196
-
Characterization of molecular beam epitaxy grown CuInSe2 on GaAs(001)Shioda, R. et al. | 1995
- 1201
-
Heteroepitaxy and characterization of CuInSe2 on GaAs(001)Niki, S. et al. | 1995
- 1206
-
Stoichiometric control of CuInSe2 thin films using a molecular beam epitaxy techniqueTseng, B.-H. et al. | 1995
- 1211
-
Blue luminescent SrGa2S4:Ce thin films grown by molecular beam epitaxyTanaka, K. et al. | 1995
- 1215
-
The effect of growth temperature, -doping and barrier composition on mobilities in shallow AlGaAs-GaAs two-dimensional electron gasesHolland, M. C. / Skuras, E. / Davies, J. H. / Larkin, I. A. et al. | 1995
- 1215
-
The effect of growth temperature, d-doping and barrier composition on mobilities in shallow AlGaAs-GaAs two-dimensional electron gasesHolland, M.C. et al. | 1995
- 1220
-
Enhancement of electron mobility by preventing pit formation at the In0.52Al0.48As-In0.8Ga0.2As heterointerface using an inserted In0.53Ga0.47As layerNakayama, T. et al. | 1995
- 1225
-
InP-based heterostructure field-effect transistors with high-quality short-period (InAs)3m-(GaAs)1m superlattice channel layersAuer, U. et al. | 1995
- 1230
-
High Gm In0.5Al0.5As-In0.5Ga0.5As high electron mobility transistors grown lattice-mismatched on GaAs substratesMishima, T. et al. | 1995
- 1236
-
Highly strained InGaAs layers on GaAs grown by molecular beam epitaxy for high electron mobility transistorsKudo, M. et al. | 1995
- 1241
-
Optimized molecular beam epitaxial growth temperature profile for high-performance AlInAs-GaInAs single quantum well high electron mobility transistor structuresKünzel, H. et al. | 1995
- 1246
-
Effect of strained layer on GaAs power field effect transistor using low temperature bufferSano, S. et al. | 1995
- 1252
-
Molecular beam epitaxial growth of pseudomorphic InAlAs-InGaAs high electron mobility transistors with high cut-off frequenciesKlein, W. et al. | 1995
- 1256
-
Growth conditions and device performance of InGaAs-AlGaAs pseudomorphic inverted high electron mobility transistorKawaguchi, T. et al. | 1995
- 1261
-
Growth of high-quality InGaP and application for modulation-doped structure by molecular beam epitaxy with a GaP sourceShitara, T. et al. | 1995
- 1266
-
Electron distribution in modulation doped AlGaAs-GaAs single quantum wells and inverted modulation doped GaAs-AlGaAs heterostructuresSuzuki, K. et al. | 1995
- 1270
-
Backgating and light sensitivity in GaAs metal-semiconductor field effect transistorsLi, R.-G. et al. | 1995
- 1270
-
Backgating and light sensitivity in GaAs metal-semiconductor field effect transitorsLi, R.-G. / Wang, Z.-G. / Liang, J.-B. / Ren, G.-B. et al. | 1995
- 1275
-
GaAs-based metal-insulator-semiconductor structures with low interface traps using molecular beam epitaxy and chemical vapor depositionPark, D.G. et al. | 1995
- 1281
-
High current gain InGaP-GaAs heterojunction bipolar transistors grown by multi-wafer gas-source molecular beam epitaxy systemAndo, H. et al. | 1995
- 1287
-
Quantitative correlation between oxygen impurity and current gain of AlGaAs/GaAs heterojunction bipolar transistors grown by molecular beam epitaxyIzumi, S. / Sakai, M. / Shimura, T. / Tsugami, M. et al. | 1995
- 1287
-
Quantitative correlation between oxygen impurity and current gain b of AlGaAs-GaAs heterojunction bipolar transistors grown by molecular beam epitaxyIzumi, S. et al. | 1995
- 1292
-
Continuous molecular beam epitaxy of arsenides and phosphides applied to device structures on InP substratesHarmand, J.C. et al. | 1995
- 1297
-
Molecular beam epitaxy growth for a heavily-doped thin base layer of heterojunction bipolar transistors used for high-speed integrated circuitsIizuka, N. et al. | 1995
- 1302
-
High sensitivity Hall elements made from Si-doped InAs on GaAs substrates by molecular beam epitaxyIwabuchi, T. et al. | 1995
- 1307
-
InAs deep quantum well structures and their application to Hall elementsKuze, N. et al. | 1995
- 1313
-
Molecular beam epitaxy growth of an ultrahigh finesse microcavityOesterle, U. et al. | 1995