Frequency-Resolved Measurements for the Characterization of MOSFET Parameters at Low Longitudinal Field (Englisch)
- Neue Suche nach: Selmi, L.
- Neue Suche nach: Selmi, L.
- Neue Suche nach: Riccò, B.
In:
IEEE transactions on electron devices
;
42
, 2
; 315-320
;
1995
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Frequency-Resolved Measurements for the Characterization of MOSFET Parameters at Low Longitudinal Field
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Beteiligte:
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Erschienen in:IEEE transactions on electron devices ; 42, 2 ; 315-320
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsort:New York, NY
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Erscheinungsdatum:1995
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ISSN:
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ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 53.50 / 53.00 / 52.50 / 54.20
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 770/5670
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Schlagwörter:
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Klassifikation:
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Datenquelle:
Inhaltsverzeichnis – Band 42, Ausgabe 2
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