Thermal Budget for Fabricating p+ Polysilicon Gate with Thin Gate Oxide (Englisch)
- Neue Suche nach: Suzuki, K.
- Neue Suche nach: Suzuki, K.
- Neue Suche nach: Satoh, A.
- Neue Suche nach: Aoyama, T.
- Neue Suche nach: Namura, I.
- Neue Suche nach: Inoue, P.
- Neue Suche nach: Kataoka, Y.
- Neue Suche nach: Tada, Y.
- Neue Suche nach: Sugii, T.
In:
Journal of the Electrochemical Society
;
142
, 8
; 2786-2789
;
1995
-
ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Thermal Budget for Fabricating p+ Polysilicon Gate with Thin Gate Oxide
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Beteiligte:Suzuki, K. ( Autor:in ) / Satoh, A. / Aoyama, T. / Namura, I. / Inoue, P. / Kataoka, Y. / Tada, Y. / Sugii, T.
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Erschienen in:Journal of the Electrochemical Society ; 142, 8 ; 2786-2789
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Verlag:
- Neue Suche nach: Electrochemical Society
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Erscheinungsort:Pennington, NJ
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Erscheinungsdatum:1995
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ISSN:
-
ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 35.00 / 53.00 / 58.00
- Weitere Informationen zu Basisklassifikation
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Schlagwörter:
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Klassifikation:
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Datenquelle:
Inhaltsverzeichnis – Band 142, Ausgabe 8
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