Growth of praseodymium oxide and silicate for high-k dielectrics by molecular beam epitaxy (Englisch)
- Neue Suche nach: Watahiki, Tatsuro
- Neue Suche nach: Watahiki, Tatsuro
- Neue Suche nach: Tinkham, Brad P.
- Neue Suche nach: Jenichen, Bernd
- Neue Suche nach: Braun, Wolfgang
- Neue Suche nach: Ploog, Klaus H.
In:
Journal of crystal growth
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301
; 381-385
;
2007
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Growth of praseodymium oxide and silicate for high-k dielectrics by molecular beam epitaxy
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Beteiligte:Watahiki, Tatsuro ( Autor:in ) / Tinkham, Brad P. / Jenichen, Bernd / Braun, Wolfgang / Ploog, Klaus H.
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Erschienen in:Journal of crystal growth ; 301 ; 381-385
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Verlag:
- Neue Suche nach: Elsevier
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Erscheinungsort:Amsterdam [u.a.]
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Erscheinungsdatum:2007
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ISSN:
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ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 38.31 / 33.61 / 35.90
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 535/3475
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Schlagwörter:
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Klassifikation:
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Datenquelle:
Inhaltsverzeichnis – Band 301
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Preface| 2007
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Controlling electronic properties of epitaxial nanocomposites of dissimilar materialsHanson, M.P. / Bank, S.R. / Zide, J.M.O. / Zimmerman, J.D. / Gossard, A.C. et al. | 2007
- 10
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Recent progress in nanostructure fabrication using MBEPloog, Klaus H. et al. | 2006
- 16
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Quantitative structure determination of GaAs(001) under typical MBE conditions using synchrotron X-ray diffractionTakahasi, M. / Mizuki, J. et al. | 2006
- 22
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Structure transition between two GaAs(001)-c(4x4) surface reconstructions in As4 fluxArai, T. / Suzuki, M. / Ueno, Y. / Okabayashi, J. / Yoshino, J. et al. | 2007
- 22
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Structure transition between two GaAs(001)-c(4×4) surface reconstructions in As4 fluxArai, T. / Suzuki, M. / Ueno, Y. / Okabayashi, J. / Yoshino, J. et al. | 2006
- 26
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Investigation on GaAs(001) surface treated by As-free high temperature surface cleaning methodIsomura, N. / Tsukamoto, S. / Iizuka, K. / Arakawa, Y. et al. | 2006
- 30
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Growth simulation of fish-like pit pattern on GaAs(110)Ishii, A. / Oda, Y. et al. | 2007
- 34
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Atomically controlled doping of nitrogen on GaAs(001) surfacesShimizu, N. / Inoue, T. / Kita, T. / Wada, O. et al. | 2006
- 38
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RHEED metrology of Stranski–Krastanov quantum dotsFeltrin, A. / Freundlich, A. et al. | 2007
- 42
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Formation mechanism of rotational twins in beam-induced lateral epitaxy on (111)B GaAs substrateNaritsuka, Shigeya / Matsuoka, Sota / Kondo, Toshiyuki / Saitoh, Koji / Suzuki, Takashi / Yamamoto, Yo / Maruyama, Takahiro et al. | 2007
- 47
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Atomic arrangement in a CuPt-B-type ordered GaAsSb layer grown by molecular beam epitaxy observed by cross sectional scanning tunneling microscopeGomyo, A. / Ohkouchi, S. / Kawamura, Y. et al. | 2006
- 50
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Endotaxy of MnSb into GaSbBraun, Wolfgang / Trampert, Achim / Kaganer, Vladimir M. / Jenichen, Bernd / Satapathy, Dillip K. / Ploog, Klaus H. et al. | 2006
- 54
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Atmospheric oxygen in Mn doped GaAs/GaAs(001) thin films grown by molecular beam epitaxyXu, J.F. / Thibado, P.M. / Awo-Affouda, C. / Moore, R. / LaBella, V.P. et al. | 2007
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Surface segregation of Sb atoms during molecular-beam epitaxy of InSb quantum dots in an InAs(Sb) matrixSemenov, Alexey / Lyublinskaya, Olga G. / Solov’ev, Victor A. / Meltser, Boris Ya. / Ivanov, Sergey V. et al. | 2006
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A simple approach to temperature dependence of strain energy: Application to GaN-based semiconductorsIto, Tomonori / Araki, Tatsuya / Akiyama, Toru / Nakamura, Kohji et al. | 2006
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Compound-source molecular beam epitaxy of GaN using GaN powder and ammonia as sourcesSawada, M. / Sawadaishi, M. / Yamamoto, H. / Arai, M. / Honda, T. et al. | 2006
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In situ measurements of wafer bending curvature during growth of group-III-nitride layers on silicon by molecular beam epitaxyCordier, Y. / Baron, N. / Semond, F. / Massies, J. / Binetti, M. / Henninger, B. / Besendahl, M. / Zettler, T. et al. | 2006
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Ab initio-based approach on initial growth kinetics of GaN on GaN (001)Kangawa, Y. / Matsuo, Y. / Akiyama, T. / Ito, T. / Shiraishi, K. / Kakimoto, K. et al. | 2006
- 79
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Real-time in-situ flux monitoring by wavelength-modulated atomic absorption spectroscopy in molecular beam epitaxy: Application to Ga flux measurementVignaud, D. / Mollot, F. et al. | 2006
- 84
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P-cracker cell temperature effects on the optical properties of AlGaInP:Be layers grown by SSMBESoubervielle-Montalvo, C. / Hernández, I.C. / Sheldon, M. / Gorbatchev, A.Yu. / Rodríguez, A.G. / de Anda, F. / Zamora-Peredo, L. / Méndez-García, V.H. et al. | 2007
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Substrate temperature measurement using a commercial band-edge detection systemFarrer, I. / Harris, J.J. / Thomson, R. / Barlett, D. / Taylor, C.A. / Ritchie, D.A. et al. | 2007
- 93
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Influence of interface interruption on spin relaxation in GaAs (110) quantum wellsLiu, L.S. / Wang, W.X. / Li, Z.H. / Liu, B.L. / Zhao, H.M. / Wang, J. / Gao, H.C. / Jiang, Z.W. / Liu, S. / Chen, H. et al. | 2006
- 97
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Imaging of subbands in InAs/GaSb double quantum wells by low-temperature scanning tunneling spectroscopySuzuki, K. / Kanisawa, K. / Perraud, S. / Ueki, M. / Takashina, K. / Hirayama, Y. et al. | 2007
- 101
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Electrical and optical studies of GaMnAs/GaAs(001) thin films grown by molecular beam epitaxyXu, J.F. / Liu, S.W. / Xiao, Min / Thibado, P.M. et al. | 2006
- 105
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Thermal imaging of wafer temperature in MBE using a digital cameraJackson, A.W. / Gossard, A.C. et al. | 2007
- 109
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MBE growth of TlInGaAs/TlInP/InP SCH LD structures and their laser operation with low-temperature variation of lasing wavelengthFujiwara, A. / Krishnamurthy, D. / Matsumoto, T. / Hasegawa, S. / Asahi, H. et al. | 2006
- 113
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Effects of annealing on TlGaAs/GaAs single hetero structures and TlGaAs/GaAs multiple quantum well structures grown by low-temperature MBEOhnishi, K. / Kanda, T. / Kiriyama, H. / Kajikawa, Y. et al. | 2006
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Thallium incorporation during TlInAs growth by low-temperature MBETakushima, M. / Kobayashi, N. / Yamashita, Y. / Kajikawa, Y. / Satou, Y. / Tanaka, Y. / Sumida, N. et al. | 2006
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Temperature dependence of Bi behavior in MBE growth of InGaAs/InPFeng, Gan / Oe, Kunishige / Yoshimoto, Masahiro et al. | 2007
- 125
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Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3-1.55 micrometer grown by molecular beam epitaxyNi, H.Q. / Niu, Z.C. / Fang, Z.D. / Huang, S.S. / Zhang, S.Y. / Wu, D.H. / Shun, Z. / Han, Q. / Wu, R.H. et al. | 2007
- 125
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Optimization of GaInNAs(Sb)-GaAs quantum wells at 1.3– grown by molecular beam epitaxyNi, H.Q. et al. | 2007
- 125
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Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3– grown by molecular beam epitaxyNi, H.Q. / Niu, Z.C. / Fang, Z.D. / Huang, S.S. / Zhang, S.Y. / Wu, D.H. / Shun, Z. / Han, Q. / Wu, R.H. et al. | 2006
- 125
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Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3- Formula Not Shown grown by molecular beam epitaxyNi, H. Q. / Niu, Z. C. / Fang, Z. D. / Huang, S. S. / Zhang, S. Y. / Wu, D. H. / Shun, Z. / Han, Q. / Wu, R. H. et al. | 2007
- 129
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Key issues associated with low threshold current density for InP-based quantum cascade lasersLi, A.Z. / Li, H. / Xu, G.Y. / Zhang, Y.G. / Lin, C. / Zhu, C. / Wei, L. / Li, Y.Y. et al. | 2007
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InAsPSb quaternary alloy grown by gas source molecular beam epitaxyTsai, Gene / Wang, De-Lun / Wu, Chia-En / Wu, Chen-Jun / Lin, Yan-Ting / Lin, Hao-Hsiung et al. | 2006
- 139
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Development of GaAs-based MOSFET using molecular beam epitaxyDroopad, Ravi / Rajagopalan, Karthik / Abrokwah, Jon / Adams, Liz / England, Nate / Uebelhoer, Dave / Fejes, Peter / Zurcher, Peter / Passlack, Matthias et al. | 2006
- 145
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Growth and subband structure determination of high mobility hole gases on (001) and (110) GaAsGerl, C. / Bauer, J. / Wegscheider, W. et al. | 2006
- 148
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Dramatic dependence of the Fermi level pinning strength on crystal orientation at clean surfaces of n-type In0.53Ga0.47As grown by molecular beam epitaxyPerraud, Simon / Kanisawa, Kiyoshi / Wang, Zhao-Zhong / Hirayama, Yoshiro et al. | 2007
- 152
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Properties of InSb single-crystal thin films sandwiched by Al0.1In0.9Sb layers with 0.5% lattice mismatch grown on GaAsGeka, Hirotaka / Okamoto, Atsushi / Yamada, Satoshi / Goto, Hiromasa / Yoshida, Kazuo / Shibasaki, Ichiro et al. | 2007
- 158
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Growth of (In,Ga)As/(Al,Ga)As quantum wells on GaAs(110) by MBEHey, R. / Trampert, A. / Jahn, U. / Couto, O.D.D. Jr. / Santos, P. et al. | 2007
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Growth of GaAs with orientation-patterned structures for nonlinear opticsYu, Xiaojun / Scaccabarozzi, Luigi / Lin, Angie C. / Fejer, Martin M. / Harris, James S. et al. | 2007
- 168
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Structural and optical studies of (AlAs)m/(GaAs)n type-I ultra short-period superlattices with fractional monolayerFujii, Kensuke / Tsurumachi, Noriaki / Miyagawa, Hayato / Ueji, Rintaro / Itoh, Hiroshi / Nakanishi, Shunsuke / Akiyama, Hidefumi / Koshiba, Shyun et al. | 2007
- 172
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Surface segregation of indium atoms during molecular beam epitaxy of InGaAs/GaAs superlattices on GaAs substratesKitada, Takahiro / Shimomura, Satoshi / Hiyamizu, Satoshi et al. | 2006
- 172
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Surface segregation of indium atoms during molecular beam epitaxy of InGaAs-GaAs superlattices on GaAs substratesKitada, Takahiro et al. | 2007
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Surface segregation of indium atoms during molecular beam epitaxy of InGaAs/GaAs superlattices on Formula Not Shown GaAs substratesKitada, T. / Shimomura, S. / Hiyamizu, S. et al. | 2007
- 177
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Photoreflectance study of InGaAs/AlAsSb quantum wells grown by molecular beam epitaxyMozume, T. / Kasai, J. / Nagase, M. / Simoyama, T. / Ishikawa, H. et al. | 2006
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Buffer influence on AlSb/InAs/AlSb quantum wellsLi, Zhi Hua / Wang, Wen Xin / Liu, Lin Sheng / Gao, Han Chao / Jiang, Zhong Wei / Zhou, Jun Ming / Chen, Hong et al. | 2007
- 185
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Negative and positive persistent photoconductivity effects in AlxGa1−xAsySb1−y/InAs quantum wellsIshida, S. / Fujimoto, A. / Oto, K. / Araki, M. / Shibasaki, I. et al. | 2007
- 190
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Area selective epitaxy of GaAs with AlGaAs native oxide mask by molecular beam epitaxyYoshiba, Ippei / Iwai, Takayuki / Uehara, Takahiro / Horikoshi, Yoshiji et al. | 2006
- 194
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High mobility metamorphic AlSb/InAs heterostructures grown on InP substratesDesplanque, L. / Vignaud, D. / Wallart, X. et al. | 2007
- 199
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Low-temperature transport properties in AlxGa1−xAsySb1−y/InAs quantum wells: Well-width dependenceIshida, S. / Fujimoto, A. / Araki, M. / Oto, K. / Okamoto, A. / Shibasaki, I. et al. | 2007
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Low-temperature growth of InSb(111) on Si(111) substrateMurata, K. / Ahmad, N.B. / Tamura, Y. / Mori, M. / Tatsuyama, C. / Tambo, T. et al. | 2006
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Heteroepitaxial growth of rotated InSb films on a Si(111) substrate via 2×2-In surface reconstructionMori, M. / Saito, M. / Yamashita, Y. / Nagashima, K. / Hashimoto, M. / Tatsuyama, C. / Tambo, T. et al. | 2006
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Heteroepitaxial growth of rotated InSb films on a Si(111) substrate via 2x2-In surface reconstructionMori, M. / Saito, M. / Yamashita, Y. / Nagashima, K. / Hashimoto, M. / Tatsuyama, C. / Tambo, T. et al. | 2007
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Heavily carbon-doped p-type InGaAs grown by gas source molecular beam epitaxy for application to heterojunction bipolar transistorsXu, Anhuai / Qi, Ming / Zhu, Fuying / Sun, Hao / Ai, Likun et al. | 2006
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MBE growth of heavily carbon doped GaAsSb on InP for heterojunction bipolar transistor applicationsYarekha, D.A. / Godey, S. / Wallart, X. / Colder, H. / Zaknoune, M. / Mollot, F. et al. | 2007
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A study on maskless selective growth of Mg-doping p-type GaAs using low-energy focused ion beamKim, E.M. / Gotoh, T. / Fukai, M. / Suzuki, T. / Pak, K. et al. | 2006
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Characterization of heavily Sn-doped GaAs grown by migration-enhanced epitaxyChavanapranee, Tosaporn / Horikoshi, Yoshiji et al. | 2006
- 230
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Dependence of the AlSb buffers on GaSb/GaAs(001) heterostructuresKim, H.S. / Noh, Y.K. / Kim, M.D. / Kwon, Y.J. / Oh, J.E. / Kim, Y.H. / Lee, J.Y. / Kim, S.G. / Chung, K.S. et al. | 2007
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Invalidity of graded buffers for InAs grown on GaAs (001)—A comparison between direct and graded-buffer growthJeong, Y. / Choi, H. / Suzuki, T. et al. | 2007
- 240
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Strain compensation for InGaAs–AlAs–AlAsSb coupled double quantum wells by controlling the barrier layer compositionNagase, Masanori / Mozume, Teruo / Simoyama, Takasi / Hasama, Toshifumi / Ishikawa, Hiroshi et al. | 2006
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Growth mechanisms and structural properties of self-assembled AlSb quantum dots on a Si(100) substrateNoh, Y.K. / Park, S.R. / Kim, M.D. / Kwon, Y.J. / Oh, J.E. / Kim, Y.H. / Lee, J.Y. / Kim, S.G. / Chung, K.S. / Kim, T.G. et al. | 2006
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Modification of InAs quantum dot structure during annealingKaizu, Toshiyuki / Takahasi, Masamitu / Yamaguchi, Koichi / Mizuki, Jun’ichiro et al. | 2006
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Observation of abrupt first-order metal–insulator transition in Be-doped GaAsKim, Hyun-Tak / Youn, Doo-Hyeb / Chae, Byung-Gyu / Kang, Kwang-Yong / Lim, Yong-Sik et al. | 2006
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Properties of low-temperature-grown InAs and their changes upon annealingShiba, M. / Ikariyama, R. / Takushima, M. / Kajikawa, Y. et al. | 2006
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GaMnAs grown on (001), (311)A and (110) GAaS substrates: Comparison of growth conditions and post-growth annealing behaviourWurstbauer, Ursula / Sperl, Matthias / Schuh, Dieter / Bayreuther, Günther / Sadowski, Janusz / Wegscheider, Werner et al. | 2006
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Effect of substrate temperature on the properties of heavily Mn-doped GaAsLee, H.-J. / Chiba, D. / Matsukura, F. / Ohno, H. et al. | 2006
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MBE HgCdTe on Si and GaAs substratesHe, L. / Chen, L. / Wu, Y. / Fu, X.L. / Wang, Y.Z. / Wu, J. / Yu, M.F. / Yang, J.R. / Ding, R.J. / Hu, X.N. et al. | 2006
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Zn irradiation effects in MBE growth of MgSe/BeZnSeTe II–VI compound superlattices on InP substratesNomura, Ichirou / Yamazaki, Tomohiro / Hayashi, Hiroaki / Hayami, Koichi / Kato, Masaki / Kishino, Katsumi et al. | 2006
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Luminescence study on evolution from Te isoelectronic centers to type-II ZnTe quantum dots grown by metalorganic molecular-beam epitaxyJo, M. / Endo, M. / Kumano, H. / Suemune, I. et al. | 2007
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Structural and optical properties of CdSe quantum dots induced by amorphous SeAichele, T. / Robin, I.-C. / Bougerol, C. / André, R. / Tatarenko, S. / Van Tendeloo, G. et al. | 2006
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Al and N co-doped ZnTe Layers Grown by MBEIchiba, A. / Kobayashi, M. et al. | 2007
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MBE growth of MgS nanowires characterized using AFMMoug, R.T. / Bradford, C. / Prior, K.A. et al. | 2006
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Amorphous-Te-mediated self-organization of CdSe/ZnSe nanostructuresMahapatra, S. / Margapoti, E. / Worschech, L. / Forchel, A. / Brunner, K. et al. | 2006
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Deep emissions of MBE-ZnTe on tilted GaAs substrateShigaura, G. / Ohashi, M. / Ichinohe, Y. / Kanamori, M. / Kimura, Na. / Kimura, No. / Sawada, T. / Suzuki, K. / Imai, K. et al. | 2006
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Quasi-Stranski–Krastanow growth mode of self-assembled CdTe quantum dots grown on ZnSe by molecular beam epitaxyYang, C.S. / Lai, Y.J. / Chou, W.C. / Chen, D.S. / Wang, J.S. / Chien, K.F. / Shih, Y.T. et al. | 2006
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Light up-conversion mechanism of ZnSe–ZnTe superlatticesOhashi, M. / Shigaura, G. / Ichinohe, Y. / Kanamori, M. / Chikarayumi, Y. / Sasaki, Y. / Kimura, Na. / Kimura, No. / Sawada, T. / Suzuki, K. et al. | 2006
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Layer-by-layer growth and island formation in CdSe/ZnSe heteroepitaxyMahapatra, S. / Kiessling, T. / Margapoti, E. / Astakhov, G.V. / Ossau, W. / Worschech, L. / Forchel, A. / Brunner, K. et al. | 2006
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Very thin, high Ge content Si0.3Ge0.7 relaxed buffer grown by MBE on SOI(001) substrateMyronov, M. / Shiraki, Y. et al. | 2006
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Island motion triggered by the growth of strain-relaxed SiGe/Si(001) islandsMerdzhanova, T. / Rastelli, A. / Stoffel, M. / Kiravittaya, S. / Schmidt, O.G. et al. | 2006
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Isotopically controlled self-assembled Ge/Si nanostructuresMoutanabbir, O. / Miyamoto, S. / Fujimoto, A. / Itoh, K.M. et al. | 2006
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High-quality heteroepitaxial Ge growth on nano-patterned Si templates using diblock copolymer patterningLee, J. / Wang, K.L. / Chen, H.-T. / Chen, L.-J. et al. | 2007
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Growth of strain relaxed Si1−yCy films using SOI substratesMurano, Masahiko / Ishihara, Hanae / Yamada, Akira / Konagai, Makoto et al. | 2006
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Fabrication of Ge channels with extremely high compressive strain and their magnetotransport propertiesSawano, K. / Kunishi, Y. / Toyama, K. / Okamoto, T. / Usami, N. / Nakagawa, K. / Shiraki, Y. et al. | 2006
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Growth temperature dependence of lattice structures of SiGe/graded buffer structures grown on Si(110) substrates by gas-source MBEArimoto, Keisuke / Yamanaka, Junji / Nakagawa, Kiyokazu / Sawano, Kentarou / Shiraki, Yasuhiro / Usami, Noritaka / Nakajima, Kazuo et al. | 2006
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Surface morphology of the Si(111) surface induced by Co-deposition of Si and CH4Suryana, R. / Ichimiya, A. / Nakahara, H. / Saito, Y. et al. | 2006
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Polarization-induced two-dimensional electron gas at Zn1−xMgxO/ZnO heterointerfaceYano, Mitsuaki / Hashimoto, Kazuyuki / Fujimoto, Kazuya / Koike, Kazuto / Sasa, Shigehiko / Inoue, Masataka / Uetsuji, Yasutomo / Ohnishi, Tomoyuki / Inaba, Katsuhiko et al. | 2006
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High electron mobility Zn polar ZnMgO/ZnO heterostructures grown by molecular beam epitaxyTampo, H. / Matsubara, K. / Yamada, A. / Shibata, H. / Fons, P. / Yamagata, M. / Kanie, H. / Niki, S. et al. | 2006
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p-Type ZnO on sapphire by using O2–N2 co-activating and fabrication of ZnO LEDZhang, Z.Z. / Wei, Z.P. / Lu, Y.M. / Shen, D.Z. / Yao, B. / Li, B.H. / Zhao, D.X. / Zhang, J.Y. / Fan, X.W. / Tang, Z.K. et al. | 2006
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Growth of non-polar ZnO/(Zn,Mg)O quantum well structures on R-sapphire by plasma-assisted molecular beam epitaxyChauveau, J.-M. / Buell, D.A. / Laügt, M. / Vennéguès, P. / Teisseire-Doninelli, M. / Berard-Bergery, S. / Deparis, C. / Lo, B. / Vinter, B. / Morhain, C. et al. | 2007
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ZnO epitaxial films grown by flux-modulated RF-MBEHirano, Katsuya / Fujita, Miki / Sasajima, Masanori / Kosaka, Tomohiro / Horikoshi, Yoshiji et al. | 2007
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Effects of low-temperature-grown ZnO buffer layer and Zn/O ratio on the properties of high-temperature-overgrown ZnO main layer on Si substrate by MBELu, Y.M. / Wang, X. / Zhang, Z.Z. / Shen, D.Z. / Su, S.C. / Yao, B. / Li, B.H. / Zhang, J.Y. / Zhao, D.X. / Fan, X.W. et al. | 2007
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A novel approach of using a MBE template for ALD growth of high-κ dielectricsLee, K.Y. / Lee, W.C. / Huang, M.L. / Chang, C.H. / Lee, Y.J. / Chiu, Y.K. / Wu, T.B. / Hong, M. / Kwo, R. et al. | 2007
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A novel approach of using a MBE template for ALD growth of high-k dielectricsLee, K. Y. / Lee, W. C. / Huang, M. L. / Chang, C. H. / Lee, Y. J. / Chiu, Y. K. / Wu, T. B. / Hong, M. / Kwo, R. et al. | 2007
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Growth of praseodymium oxide and silicate for high-k dielectrics by molecular beam epitaxyWatahiki, Tatsuro / Tinkham, Brad P. / Jenichen, Bernd / Braun, Wolfgang / Ploog, Klaus H. et al. | 2006
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MBE grown high-quality Gd2O3/Si(111) hetero-structureLin, T.D. / Hang, M.C. / Hsu, C.H. / Kwo, J. / Hong, M. et al. | 2006
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MBE grown high κ dielectrics Ga2O3(Gd2O3) on GaNChang, Y.C. / Lee, Y.J. / Chiu, Y.N. / Lin, T.D. / Wu, S.Y. / Chiu, H.C. / Kwo, J. / Wang, Y.H. / Hong, M. et al. | 2007
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MBE grown high k dielectrics Ga2O3(Gd2O3) on GaNChang, Y. C. / Lee, Y. J. / Chiu, Y. N. / Lin, T. D. / Wu, S. Y. / Chiu, H. C. / Kwo, J. / Wang, Y. H. / Hong, M. et al. | 2007
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Characterization of Au thin films deposited on α-Sn(111)-(3×3)/InSb(111)A surfacesKasukabe, Y. / Zhao, X. / Nishida, S. / Fujino, Y. et al. | 2007
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Characterization of Au thin films deposited on a-Sn(111)-(3x3)/InSb(111)A surfacesKasukabe, Y. / Zhao, X. / Nishida, S. / Fujino, Y. et al. | 2007
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Structural and transport properties of β-FeSi2 [100] oriented thin film on Si(001) substrateKakemoto, H. / Higuchi, T. / Shibata, H. / Wada, S. / Tsurumi, T. et al. | 2007
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Structural and transport properties of b-FeSi2 [100] oriented thin film on Si(001) substrateKakemoto, H. / Higuchi, T. / Shibata, H. / Wada, S. / Tsurumi, T. et al. | 2007
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Quality improvement of III-nitride epilayers and their heterostructures grown on vicinal substrates by rf-MBEShen, X.Q. / Furuta, K. / Nakamura, N. / Matsuhata, H. / Shimizu, M. / Okumura, H. et al. | 2006
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A comparative study of nonpolar a-plane and m-plane AlN grown on 4H-SiC by plasma-assisted molecular-beam epitaxySuda, J. / Horita, M. / Armitage, R. / Kimoto, T. et al. | 2007
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Be and Mg co-doping in GaNKawaharazuka, A. / Tanimoto, T. / Nagai, K. / Tanaka, Y. / Horikoshi, Y. et al. | 2006
- 417
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MBE growth of GaN using 15N isotope for nuclear magnetic resonance applicationsNovikov, S.V. / Morris, R.D. / Kent, A.J. / Geen, H.L. / Foxon, C.T. et al. | 2006
- 420
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Effects of V/III ratio on photoluminescence spectra of Eu-doped GaN grown by molecular beam epitaxySawahata, Junji / Seo, Jongwon / Takiguchi, Mikio / Saito, Daisuke / Nemoto, Shinya / Akimoto, Katsuhiro et al. | 2006
- 424
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Low-temperature deposition of hexagonal GaN films for UV electroluminescent devices by CS-MBE techniqueHonda, Tohru / Egawa, Shinichi / Sugimoto, Koichi / Arai, Masatoshi et al. | 2007
- 429
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AlGaN/GaN HEMTs on free-standing GaN substrates: MBE growth and microwave characterizationStorm, D.F. / Katzer, D.S. / Roussos, J.A. / Mittereder, J.A. / Bass, R. / Binari, S.C. / Hanser, D. / Preble, E.A. / Evans, K.R. et al. | 2006
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Developments for the production of high-quality and high-uniformity AlGaN/GaN heterostructures by ammonia MBECordier, Y. / Semond, F. / Massies, J. / Leroux, M. / Lorenzini, P. / Chaix, C. et al. | 2007
- 437
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Growth of GaN-HEMT structures using super lattice quasi-AlGaN alloy barriers on vicinal SiC substrates by rf-MBEFuruta, K. / Nakamura, N. / Shen, X.Q. / Shimizu, M. / Kitamura, T. / Nakamura, K. / Okumura, H. et al. | 2007
- 442
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GaN nanostructures and HFET structures selectively grown on silicon substrates by ammonia-MBETang, H. / Bardwell, J.A. / Lapointe, J. / Raymond, S. / Fraser, J. / Haffouz, S. / Rolfe, S. et al. | 2007
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Fabrication of lateral lattice-polarity-inverted GaN heterostructureKatayama, Ryuji / Kuge, Yoshihiro / Kondo, Takashi / Onabe, Kentaro et al. | 2006
- 452
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Electrical properties of MBE-grown AlGaN/GaN HEMT structures by using 4H-SiC (0001) vicinal substratesNakamura, N. / Furuta, K. / Shen, X.Q. / Kitamura, T. / Nakamura, K. / Okumura, H. et al. | 2006
- 457
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Investigation of intersubband absorption in GaN/AlN multiple quantum wells grown on different substrates by molecular beam epitaxyLiu, X.Y. / Aggerstam, T. / Jänes, P. / Holmström, P. / Lourdudoss, S. / Thylén, L. / Andersson, T.G. et al. | 2007
- 461
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Growth and optical properties of AlN homoepitaxial layers grown by ammonia-source molecular beam epitaxyIwata, Shiro / Nanjo, Yoshiyuki / Okuno, Toshihiro / Kurai, Satoshi / Taguchi, Tsunemasa et al. | 2006
- 465
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InGaN-based epilayers and quantum wells with intense room-temperature photoluminescence in the 500–650nm rangeIvanov, Sergey V. / Jmerik, Valentin N. / Shubina, Tatiana V. / Listoshin, Svyatoslav B. / Mizerov, Andrey M. / Sitnikova, Alla A. / Kim, Min-Ho / Koike, Masayoshi / Kim, Bum-Joon / Kop’ev, Pyotr S. et al. | 2006
- 469
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Plasma-assisted MBE of InGaN epilayers with atomically smooth and nanocolumnar morphology, grown on MOVPE GaN/Al2O3 templatesJmerik, V.N. / Mizerov, A.M. / Shubina, T.V. / Yagovkina, M. / Listoshin, V.B. / Sitnikova, A.A. / Ivanov, S.V. / Kim, M.-H. / Koike, M. / Kim, B.-J. et al. | 2006
- 473
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Growth of In-rich InGaN films on sapphire via GaN layer by RF-MBEKomaki, Hironori / Nakamura, Teruyuki / Katayama, Ryuji / Onabe, Kentaro / Ozeki, Masashi / Ikari, Tetsuo et al. | 2006
- 478
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MBE growth of GaN on MgO substrateSuzuki, Ryotaro / Kawaharazuka, Atsushi / Horikoshi, Yoshiji et al. | 2006
- 482
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Use of band-gap thermometry to investigate the growth of GaN on sapphire and GaAsFoxon, C.T. / Campion, R.P. / Grant, V.A. / Novikov, S.V. / Harris, J.J. / Thomson, R. / Taylor, C. / Barlett, D. et al. | 2007
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Fabrication of GaN dot structure by droplet epitaxy using NH3Maruyama, Takahiro / Otsubo, Hiroaki / Kondo, Toshiyuki / Yamamoto, Yo / Naritsuka, Shigeya et al. | 2006
- 490
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Growth of InN nanocolumns by RF-MBENishikawa, S. / Nakao, Y. / Naoi, H. / Araki, T. / Na, H. / Nanishi, Y. et al. | 2007
- 496
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In situ spectroscopic ellipsometry and RHEED monitored growth of InN nanocolumns by molecular beam epitaxyWang, Xinqiang / Che, Song-Bek / Ishitani, Yoshihiro / Yoshikawa, Akihiko et al. | 2006
- 500
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A quantitative study of suppression effect for oxygen contamination by Ga beam irradiation in InN RF-MOMBE growthHashimoto, A. / Iwao, K. / Isamoto, K. / Yamamoto, A. et al. | 2006
- 504
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Effects of nitrogen plasma irradiation during the growth process after buffer layer growth on the characteristics of hexagonal InN films grown on Si (111) by electron–cyclotron resonance plasma-assisted molecular-beam epitaxyYodo, Tokuo / Shimada, Teruya / Tagawa, Sumito / Harada, Yoshiyuki et al. | 2007
- 508
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RF-MBE growth and structural characterization of cubic InN films on yttria-stabilized zirconia (001) substratesNakamura, T. / Tokumoto, Y. / Katayama, R. / Yamamoto, T. / Onabe, K. et al. | 2007