Local study of thickness-dependent electronic properties of ultrathin silicon oxide near SiO2-Si interface (Englisch)
- Neue Suche nach: Xue, K.
- Neue Suche nach: Xue, K.
- Neue Suche nach: Ho, H.P.
- Neue Suche nach: Xu, J.B.
In:
Journal of physics / D
;
40
, 9
; 2886-2893
;
2007
-
ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Local study of thickness-dependent electronic properties of ultrathin silicon oxide near SiO2-Si interface
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Beteiligte:
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Erschienen in:Journal of physics / D ; 40, 9 ; 2886-2893
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Verlag:
- Neue Suche nach: IOP Publ.
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Erscheinungsort:Bristol
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Erscheinungsdatum:2007
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ISSN:
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ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Klassifikation:
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Datenquelle:
Inhaltsverzeichnis – Band 40, Ausgabe 9
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The transition from longitudinal to perpendicular recordingH J Richter et al. | 2007
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Photonic Crystal DevicesPallab K Bhattacharya (Editor-in-Chief) et al. | 2007
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TOPICAL REVIEW: The transition from longitudinal to perpendicular recordingRichter, H.J. et al. | 2007
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EDITORIAL: Photonic Crystal Devices| 2007